SG11201909351RA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents
Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201909351RA SG11201909351RA SG11201909351RA SG11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA
- Authority
- SG
- Singapore
- Prior art keywords
- manufacturing
- mask
- semiconductor device
- film
- analysis
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 abstract 2
- 238000004458 analytical method Methods 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000001228 spectrum Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom% or more, the maximum peak in a Nis narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017077200A JP6808566B2 (en) | 2017-04-08 | 2017-04-08 | Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method |
PCT/JP2018/014039 WO2018186320A1 (en) | 2017-04-08 | 2018-04-02 | Mask blank, method for producing transfer mask, and method for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201909351RA true SG11201909351RA (en) | 2019-11-28 |
Family
ID=63712267
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201909351R SG11201909351RA (en) | 2017-04-08 | 2018-04-02 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
SG10202112818PA SG10202112818PA (en) | 2017-04-08 | 2018-04-02 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202112818PA SG10202112818PA (en) | 2017-04-08 | 2018-04-02 | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (2) | US11119400B2 (en) |
JP (1) | JP6808566B2 (en) |
KR (1) | KR102510830B1 (en) |
SG (2) | SG11201909351RA (en) |
TW (2) | TWI760471B (en) |
WO (1) | WO2018186320A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG10201911900YA (en) | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
JP7231094B2 (en) * | 2018-12-12 | 2023-03-01 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5437579A (en) | 1977-08-30 | 1979-03-20 | Mitsubishi Electric Corp | Chrome plate |
JPH04125643A (en) | 1990-09-18 | 1992-04-27 | Toppan Printing Co Ltd | Photomask and photomask blank |
US5380608A (en) | 1991-11-12 | 1995-01-10 | Dai Nippon Printing Co., Ltd. | Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide |
JPH05289305A (en) * | 1992-04-08 | 1993-11-05 | Dainippon Printing Co Ltd | Phase-shift photomask |
TW480367B (en) * | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
JP3093632U (en) | 2002-03-01 | 2003-05-16 | Hoya株式会社 | Halftone phase shift mask blank |
DE602006021102D1 (en) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
JP4509050B2 (en) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
JP4737426B2 (en) * | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | Photomask blank |
JP5762819B2 (en) * | 2010-05-19 | 2015-08-12 | Hoya株式会社 | MASK BLANK MANUFACTURING METHOD, TRANSFER MASK MANUFACTURING METHOD, MASK BLANK AND TRANSFER MASK |
JP6084391B2 (en) * | 2011-09-28 | 2017-02-22 | Hoya株式会社 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
KR101269062B1 (en) | 2012-06-29 | 2013-05-29 | 주식회사 에스앤에스텍 | Blankmask and method for fabricating photomask using the same |
JP6005530B2 (en) | 2013-01-15 | 2016-10-12 | Hoya株式会社 | Mask blank, phase shift mask and manufacturing method thereof |
KR102211544B1 (en) * | 2013-01-15 | 2021-02-02 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, and method for manufacturing semiconductor device |
JP6389375B2 (en) * | 2013-05-23 | 2018-09-12 | Hoya株式会社 | Mask blank, transfer mask, and manufacturing method thereof |
KR102046729B1 (en) * | 2013-09-24 | 2019-11-19 | 호야 가부시키가이샤 | Mask blank, transfer mask, and method for manufacturing semiconductor device |
JP6229466B2 (en) | 2013-12-06 | 2017-11-15 | 信越化学工業株式会社 | Photomask blank |
TW201537281A (en) | 2014-03-18 | 2015-10-01 | Hoya Corp | Mask blank, phase shift mask and method for manufacturing semiconductor device |
KR101504557B1 (en) | 2014-03-23 | 2015-03-20 | 주식회사 에스앤에스텍 | Blankmask and Photomask using the same |
KR102522452B1 (en) * | 2015-03-19 | 2023-04-18 | 호야 가부시키가이샤 | Mask blank, transfer mask, transfer mask manufacturing method and semiconductor device manufacturing method |
JP2016188958A (en) * | 2015-03-30 | 2016-11-04 | Hoya株式会社 | Mask blank, method for producing phase shift mask, and method for producing semiconductor device |
JP6544964B2 (en) * | 2015-03-31 | 2019-07-17 | Hoya株式会社 | Mask blank, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
JP6418035B2 (en) * | 2015-03-31 | 2018-11-07 | 信越化学工業株式会社 | Phase shift mask blanks and phase shift masks |
KR102625449B1 (en) * | 2015-05-15 | 2024-01-16 | 호야 가부시키가이샤 | Mask blank, mask blank manufacturing method, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP6573806B2 (en) * | 2015-08-31 | 2019-09-11 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6158460B1 (en) | 2015-11-06 | 2017-07-05 | Hoya株式会社 | Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method |
KR20180114895A (en) * | 2016-02-15 | 2018-10-19 | 호야 가부시키가이샤 | Mask blank, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
-
2017
- 2017-04-08 JP JP2017077200A patent/JP6808566B2/en active Active
-
2018
- 2018-04-02 US US16/603,127 patent/US11119400B2/en active Active
- 2018-04-02 KR KR1020197027637A patent/KR102510830B1/en active IP Right Grant
- 2018-04-02 SG SG11201909351R patent/SG11201909351RA/en unknown
- 2018-04-02 SG SG10202112818PA patent/SG10202112818PA/en unknown
- 2018-04-02 WO PCT/JP2018/014039 patent/WO2018186320A1/en active Application Filing
- 2018-04-03 TW TW107111775A patent/TWI760471B/en active
- 2018-04-03 TW TW111107820A patent/TWI799164B/en active
-
2021
- 2021-08-02 US US17/391,593 patent/US11435662B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
SG10202112818PA (en) | 2021-12-30 |
JP2018180170A (en) | 2018-11-15 |
KR20190137790A (en) | 2019-12-11 |
TW201842402A (en) | 2018-12-01 |
TWI760471B (en) | 2022-04-11 |
US11119400B2 (en) | 2021-09-14 |
JP6808566B2 (en) | 2021-01-06 |
US20210109436A1 (en) | 2021-04-15 |
TWI799164B (en) | 2023-04-11 |
WO2018186320A1 (en) | 2018-10-11 |
US11435662B2 (en) | 2022-09-06 |
US20210364910A1 (en) | 2021-11-25 |
KR102510830B1 (en) | 2023-03-17 |
TW202223532A (en) | 2022-06-16 |
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