SG11201909351RA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201909351RA
SG11201909351RA SG11201909351RA SG11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA SG 11201909351R A SG11201909351R A SG 11201909351RA
Authority
SG
Singapore
Prior art keywords
manufacturing
mask
semiconductor device
film
analysis
Prior art date
Application number
Inventor
Ryo Ohkubo
Hiroaki Shishido
Takashi Uchida
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201909351RA publication Critical patent/SG11201909351RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom% or more, the maximum peak in a Nis narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.
SG11201909351R 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device SG11201909351RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017077200A JP6808566B2 (en) 2017-04-08 2017-04-08 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
PCT/JP2018/014039 WO2018186320A1 (en) 2017-04-08 2018-04-02 Mask blank, method for producing transfer mask, and method for producing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201909351RA true SG11201909351RA (en) 2019-11-28

Family

ID=63712267

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10202112818PA SG10202112818PA (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11201909351R SG11201909351RA (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10202112818PA SG10202112818PA (en) 2017-04-08 2018-04-02 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US11119400B2 (en)
JP (1) JP6808566B2 (en)
KR (1) KR102510830B1 (en)
SG (2) SG10202112818PA (en)
TW (2) TWI760471B (en)
WO (1) WO2018186320A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018155047A1 (en) 2017-02-27 2018-08-30 Hoya株式会社 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP7231094B2 (en) * 2018-12-12 2023-03-01 信越化学工業株式会社 Photomask blank and photomask manufacturing method

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JPS5437579A (en) 1977-08-30 1979-03-20 Mitsubishi Electric Corp Chrome plate
JPH04125643A (en) 1990-09-18 1992-04-27 Toppan Printing Co Ltd Photomask and photomask blank
US5380608A (en) 1991-11-12 1995-01-10 Dai Nippon Printing Co., Ltd. Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
JPH05289305A (en) * 1992-04-08 1993-11-05 Dainippon Printing Co Ltd Phase-shift photomask
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
JP3093632U (en) 2002-03-01 2003-05-16 Ｈｏｙａ株式会社 Halftone phase shift mask blank
EP1746460B1 (en) * 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
JP4509050B2 (en) * 2006-03-10 2010-07-21 信越化学工業株式会社 Photomask blank and photomask
JP4737426B2 (en) * 2006-04-21 2011-08-03 信越化学工業株式会社 Photomask blank
JP5762819B2 (en) * 2010-05-19 2015-08-12 Hoya株式会社 MASK BLANK MANUFACTURING METHOD, TRANSFER MASK MANUFACTURING METHOD, MASK BLANK AND TRANSFER MASK
JP6084391B2 (en) * 2011-09-28 2017-02-22 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
KR101269062B1 (en) 2012-06-29 2013-05-29 주식회사 에스앤에스텍 Blankmask and method for fabricating photomask using the same
US9625806B2 (en) * 2013-01-15 2017-04-18 Hoya Corporation Mask blank, phase-shift mask, and method for manufacturing the same
JP6005530B2 (en) 2013-01-15 2016-10-12 Hoya株式会社 Mask blank, phase shift mask and manufacturing method thereof
JP6389375B2 (en) 2013-05-23 2018-09-12 Hoya株式会社 Mask blank, transfer mask, and manufacturing method thereof
KR102046729B1 (en) * 2013-09-24 2019-11-19 호야 가부시키가이샤 Mask blank, transfer mask, and method for manufacturing semiconductor device
JP6229466B2 (en) 2013-12-06 2017-11-15 信越化学工業株式会社 Photomask blank
WO2015141078A1 (en) * 2014-03-18 2015-09-24 Hoya株式会社 Mask blank, phase shift mask and method for manufacturing semiconductor device
KR101504557B1 (en) 2014-03-23 2015-03-20 주식회사 에스앤에스텍 Blankmask and Photomask using the same
JP6612326B2 (en) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method
JP2016188958A (en) * 2015-03-30 2016-11-04 Hoya株式会社 Mask blank, method for producing phase shift mask, and method for producing semiconductor device
JP6418035B2 (en) 2015-03-31 2018-11-07 信越化学工業株式会社 Phase shift mask blanks and phase shift masks
JP6544964B2 (en) * 2015-03-31 2019-07-17 Hoya株式会社 Mask blank, method of manufacturing phase shift mask, and method of manufacturing semiconductor device
WO2016185941A1 (en) * 2015-05-15 2016-11-24 Hoya株式会社 Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device
JP6573806B2 (en) * 2015-08-31 2019-09-11 Hoya株式会社 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
KR102368405B1 (en) 2015-11-06 2022-02-28 호야 가부시키가이샤 Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method
JP6396611B2 (en) 2016-02-15 2018-09-26 Hoya株式会社 Mask blank, phase shift mask manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
TWI760471B (en) 2022-04-11
TW202223532A (en) 2022-06-16
TWI799164B (en) 2023-04-11
TW201842402A (en) 2018-12-01
KR102510830B1 (en) 2023-03-17
US11435662B2 (en) 2022-09-06
SG10202112818PA (en) 2021-12-30
US11119400B2 (en) 2021-09-14
US20210109436A1 (en) 2021-04-15
WO2018186320A1 (en) 2018-10-11
JP2018180170A (en) 2018-11-15
KR20190137790A (en) 2019-12-11
JP6808566B2 (en) 2021-01-06
US20210364910A1 (en) 2021-11-25

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