SG11201907771TA - Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201907771TA
SG11201907771TA SG11201907771TA SG11201907771TA SG11201907771TA SG 11201907771T A SG11201907771T A SG 11201907771TA SG 11201907771T A SG11201907771T A SG 11201907771TA SG 11201907771T A SG11201907771T A SG 11201907771TA SG 11201907771T A SG11201907771T A SG 11201907771TA
Authority
SG
Singapore
Prior art keywords
manufacturing
hard mask
mask film
mask
semiconductor device
Prior art date
Application number
SG11201907771TA
Inventor
Osamu Nozawa
Ryo Ohkubo
Hiroaki Shishido
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201907771TA publication Critical patent/SG11201907771TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0015—Production of aperture devices, microporous systems or stamps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

A light shielding film 2 made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film 3 made up of a material containing chrome, oxygen, and carbon are laminated on a translucent substrate 1. The hard mask film 3 is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow scan spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film 3 have a 50 atom% or more chrome content, and the maximum peak for Cr2p in a narrow scan spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.
SG11201907771TA 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device SG11201907771TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017034706 2017-02-27
PCT/JP2018/002072 WO2018155047A1 (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201907771TA true SG11201907771TA (en) 2019-09-27

Family

ID=63253886

Family Applications (3)

Application Number Title Priority Date Filing Date
SG10201911900YA SG10201911900YA (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG10201911903XA SG10201911903XA (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11201907771TA SG11201907771TA (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG10201911900YA SG10201911900YA (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG10201911903XA SG10201911903XA (en) 2017-02-27 2018-01-24 Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

Country Status (7)

Country Link
US (3) US11281089B2 (en)
JP (7) JP6415768B2 (en)
KR (4) KR102429244B1 (en)
CN (1) CN110383167B (en)
SG (3) SG10201911900YA (en)
TW (3) TWI819878B (en)
WO (1) WO2018155047A1 (en)

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Also Published As

Publication number Publication date
JP2019200440A (en) 2019-11-21
KR20190117557A (en) 2019-10-16
TWI726192B (en) 2021-05-01
KR102365595B1 (en) 2022-02-23
SG10201911900YA (en) 2020-02-27
JP2019215563A (en) 2019-12-19
US20220163880A1 (en) 2022-05-26
SG10201911903XA (en) 2020-02-27
KR20210084693A (en) 2021-07-07
JP6920775B2 (en) 2021-08-18
KR102398092B1 (en) 2022-05-16
JP2022060394A (en) 2022-04-14
JP2018141969A (en) 2018-09-13
JP6415768B2 (en) 2018-10-31
JP6732081B2 (en) 2020-07-29
JP2019012287A (en) 2019-01-24
JP7030164B2 (en) 2022-03-04
KR20220025934A (en) 2022-03-03
KR102273801B1 (en) 2021-07-06
TW201841043A (en) 2018-11-16
CN110383167A (en) 2019-10-25
CN110383167B (en) 2022-08-23
JP2021009397A (en) 2021-01-28
JP6575957B2 (en) 2019-09-18
US11762279B2 (en) 2023-09-19
TWI819878B (en) 2023-10-21
JP6767551B2 (en) 2020-10-14
US20230367196A1 (en) 2023-11-16
US11281089B2 (en) 2022-03-22
WO2018155047A1 (en) 2018-08-30
KR102429244B1 (en) 2022-08-05
KR20220066199A (en) 2022-05-23
JP2020190729A (en) 2020-11-26
JP7201853B2 (en) 2023-01-10
US20200064725A1 (en) 2020-02-27
TW202129394A (en) 2021-08-01
TWI786605B (en) 2022-12-11
TW202307557A (en) 2023-02-16

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