SG11201900415RA - Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201900415RA
SG11201900415RA SG11201900415RA SG11201900415RA SG11201900415RA SG 11201900415R A SG11201900415R A SG 11201900415RA SG 11201900415R A SG11201900415R A SG 11201900415RA SG 11201900415R A SG11201900415R A SG 11201900415RA SG 11201900415R A SG11201900415R A SG 11201900415RA
Authority
SG
Singapore
Prior art keywords
transmitting layer
phase shift
nitrogen content
shift mask
mask
Prior art date
Application number
SG11201900415RA
Inventor
Takenori Kajiwara
Ryo Ohkubo
Hiroaki Shishido
Osamu Nozawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201900415RA publication Critical patent/SG11201900415RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

DOCUMENT] Abs tract Provided is a mask blank having sufficiently fast repair rate of EB defect repair, and sufficiently high repair rate ratio to EB defect repair relative to a transparent substrate, even if the phase shift film is formed as a stacked structure of a high transmitting layer made of a SiN-based material with a large amount of nitrogen content and a low transmitting layer made of a SiN-based material with a small amount of nitrogen content. The mask blank includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes atom% or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom% nitrogen content and has a thickness less than the high transmitting layer. 61
SG11201900415RA 2016-07-19 2017-06-22 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device SG11201900415RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016141222 2016-07-19
PCT/JP2017/023032 WO2018016262A1 (en) 2016-07-19 2017-06-22 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201900415RA true SG11201900415RA (en) 2019-02-27

Family

ID=60992124

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900415RA SG11201900415RA (en) 2016-07-19 2017-06-22 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US11054735B2 (en)
JP (1) JP6740349B2 (en)
KR (1) KR102389121B1 (en)
SG (1) SG11201900415RA (en)
TW (1) TWI733852B (en)
WO (1) WO2018016262A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6896694B2 (en) * 2018-12-25 2021-06-30 Hoya株式会社 Mask blank, phase shift mask, phase shift mask manufacturing method and semiconductor device manufacturing method
JP7280171B2 (en) * 2019-12-05 2023-05-23 信越化学工業株式会社 PHOTOMASK BLANK, PHOTOMASK MANUFACTURING METHOD, AND PHOTOMASK
JP7221261B2 (en) * 2020-11-16 2023-02-13 Hoya株式会社 MASK BLANK, PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3286103B2 (en) 1995-02-15 2002-05-27 株式会社東芝 Method and apparatus for manufacturing exposure mask
JP4711317B2 (en) * 2000-09-12 2011-06-29 Ｈｏｙａ株式会社 Phase shift mask blank manufacturing method, phase shift mask manufacturing method, and pattern transfer method
JP4322848B2 (en) * 2000-09-12 2009-09-02 Ｈｏｙａ株式会社 Phase shift mask blank manufacturing method, phase shift mask manufacturing method, and pattern transfer method
JP2004537758A (en) 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー Electron beam processing
JP5702920B2 (en) * 2008-06-25 2015-04-15 Hoya株式会社 Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank
JP2010217514A (en) 2009-03-17 2010-09-30 Toppan Printing Co Ltd Method for manufacturing photomask
JP5412507B2 (en) * 2009-03-31 2014-02-12 Ｈｏｙａ株式会社 Mask blank and transfer mask
CN105739233B (en) 2010-04-09 2019-11-05 Hoya株式会社 Phase shift mask blank and its manufacturing method and phase shifting mask
KR20130132787A (en) 2010-09-30 2013-12-05 호야 가부시키가이샤 Mask blank, method for producing same, and transfer mask
JP5483366B2 (en) * 2011-03-11 2014-05-07 Ｈｏｙａ株式会社 Halftone phase shift mask blank and method of manufacturing halftone phase shift mask
KR102390253B1 (en) 2013-01-15 2022-04-22 호야 가부시키가이샤 Mask blank, phase-shift mask, and method for manufacturing semiconductor device
JP6005530B2 (en) 2013-01-15 2016-10-12 Hoya株式会社 Mask blank, phase shift mask and manufacturing method thereof
JP6313678B2 (en) * 2014-07-14 2018-04-18 Hoya株式会社 Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method
JP6104852B2 (en) 2014-07-14 2017-03-29 Hoya株式会社 Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JP6740349B2 (en) 2020-08-12
KR20190032353A (en) 2019-03-27
JPWO2018016262A1 (en) 2019-04-04
TW201805716A (en) 2018-02-16
US11054735B2 (en) 2021-07-06
WO2018016262A1 (en) 2018-01-25
TWI733852B (en) 2021-07-21
US20190163047A1 (en) 2019-05-30
KR102389121B1 (en) 2022-04-20

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