JP2014137388A5 - - Google Patents

Claims (18)

A phase shift film having a function of transmitting ArF exposure light with a transmittance of 1% or more and generating a phase shift of 170 degrees or more and 190 degrees or less with respect to the transmitted ArF exposure light is provided on the light transmitting substrate. A mask blank,
The phase shift film includes a structure in which a low transmission layer and a high transmission layer are laminated,
The low-permeability layer and the high-permeability layer are formed of a material composed of silicon and nitrogen, or a material containing one or more elements selected from a metalloid element, a non-metal element, and a rare gas in the material,
The mask blank, wherein the low-permeability layer has a relatively low nitrogen content as compared with the high-permeability layer.   The mask blank according to claim 1, wherein the low transmission layer and the high transmission layer are made of the same constituent element.   3. The mask blank according to claim 1, wherein the phase shift film has two or more sets of a laminated structure including one layer of the low transmission layer and one layer of the high transmission layer. 4.   The mask blank according to any one of claims 1 to 3, wherein the low transmission layer and the high transmission layer are formed of a material made of silicon and nitrogen. The low transmission layer is formed of a material having a refractive index n with respect to ArF exposure light of less than 2.5 and an extinction coefficient k of 1.0 or more.
5. The high transmissive layer is formed of a material having a refractive index n with respect to ArF exposure light of 2.5 or more and an extinction coefficient k of less than 1.0. The mask blank according to crab.   6. The mask blank according to claim 1, wherein each of the low transmission layer and the high transmission layer has a thickness of 20 nm or less.   The mask blank according to claim 1, wherein the highly transmissive layer is formed in contact with the translucent substrate. The phase shift film contains, at a position farthest from the light-transmitting substrate, a material composed of silicon, nitrogen and oxygen, or one or more elements selected from metalloid elements, nonmetallic elements, and rare gases in the material The mask blank according to any one of claims 1 to 7 , further comprising an uppermost layer formed of a material to be used. 9. The mask blank according to claim 8 , wherein the uppermost layer is made of a material made of silicon, nitrogen and oxygen. Phase shift mask, wherein a transfer pattern to the phase shift film of the mask blank according to any one of claims 1-9 is formed. A phase shift film having a function of transmitting ArF exposure light with a transmittance of 1% or more and generating a phase shift of 170 degrees or more and 190 degrees or less with respect to the transmitted ArF exposure light is provided on the light transmitting substrate. A method for producing a mask blank, comprising:
The phase shift film includes a structure in which a low transmission layer and a high transmission layer are laminated,
The translucent light is transmitted by reactive sputtering in a sputtering gas containing a nitrogen-based gas and a rare gas using a silicon target or a target composed of a material containing one or more elements selected from metalloid and non-metal elements. A low transmission layer forming step of forming the low transmission layer on the conductive substrate;
A sputtering target containing a nitrogen-based gas and a noble gas using a silicon target or a target made of a material containing at least one element selected from a metalloid element and a non-metal element in silicon, wherein the low-permeability layer forming step And a high transmission layer forming step of forming the high transmission layer on the translucent substrate by reactive sputtering in a sputtering gas having a higher mixing ratio of nitrogen-based gas than the case. Manufacturing method. The sputtering gas used in the low-permeability layer forming step is selected to have a nitrogen-based gas mixing ratio that is less than the range of the nitrogen-based gas mixing ratio that results in a transition mode in which the film formation tends to be unstable.
Sputtering gas used in the high-permeability layer forming step of claim 11, wherein the mixing ratio of more nitrogen-based gas than the range of the mixing ratio of nitrogen-based gas serving as the transition mode is selected Mask blank manufacturing method. The low-permeability layer forming step uses a silicon target to form the low-permeability layer by reactive sputtering in a sputtering gas composed of nitrogen gas and a rare gas, and the high-permeability layer formation step includes a silicon target. mask blank manufacturing method according to claim 11 or 12, characterized in that to form the high permeability layer by reactive sputtering in a used, sputtering gas composed of nitrogen gas and a rare gas. The low transmission layer is formed of a material having a refractive index n with respect to ArF exposure light of less than 2.5 and an extinction coefficient k of 1.0 or more.
The high permeability layer has a refractive index n with respect to the ArF exposure light 2.5 or more, either the extinction coefficient k is formed of a material that is less than 1.0 from claim 11, wherein the 13 The manufacturing method of the mask blank of crab.   The method for manufacturing a mask blank according to claim 11, wherein the highly transmissive layer is formed in contact with the translucent substrate. The translucency of the phase shift film is obtained by sputtering in a sputtering gas containing a rare gas using a silicon target or a target composed of a material containing one or more elements selected from metalloid and nonmetal elements in silicon. 16. The method for manufacturing a mask blank according to claim 11, further comprising an uppermost layer forming step of forming an uppermost layer at a position farthest from the substrate. A top layer is formed at a position farthest from the translucent substrate of the phase shift film by reactive sputtering in a sputtering gas composed of a nitrogen gas and a rare gas using a silicon target, and at least a surface layer of the top layer 14. The method of manufacturing a mask blank according to claim 13, further comprising a top layer forming step for performing a process of oxidizing the substrate. Method of manufacturing a phase shift mask, characterized in that it comprises a step of forming the phase shift film to transfer the pattern of the mask blank manufactured by the manufacturing method of the mask blank according to any one of claims 11 17.