JP2017049312A5 - - Google Patents

Claims (18)

A mask blank provided with a phase shift film and a light shielding film on the main surface of a translucent substrate,
The phase shift film has a structure in which a lower layer and an upper layer are laminated in this order from the translucent substrate side,
The lower layer is made of a material containing silicon and nitrogen,
The upper layer is made of a material containing silicon, aluminum and oxygen,
The light shielding film is made of a material containing one or more elements selected from silicon , tantalum and chromium ,
The mask blank, wherein the light shielding film is formed in contact with the surface of the upper layer.   The mask blank according to claim 1, wherein the upper layer has an oxygen content of 60 atomic% or more.   3. The mask blank according to claim 1, wherein the upper layer has a ratio by atomic percent of the silicon content to the total content of the silicon and the aluminum of 4/5 or less.   The mask blank according to claim 1, wherein the upper layer is made of silicon, aluminum, and oxygen.   The mask blank according to any one of claims 1 to 4, wherein the upper layer has a thickness of 3 nm or more.   The mask blank according to claim 1, wherein the lower layer is made of a material containing a transition metal, silicon, and nitrogen.   The phase shift film has a function of transmitting exposure light with a transmittance of 1% or more, and the exposure light transmitted through the phase shift film passes through the air by the same distance as the thickness of the phase shift film. The mask blank according to claim 1, which has a function of causing a phase difference of 150 ° or more and 180 ° or less with exposure light. Mask blank according to any one of claims 1 to 7, characterized in that the etching stopper film in contact with the main surface of the transparent substrate is formed. The mask blank according to claim 8 , wherein the etching stopper film has an oxygen content of 60 atomic% or more. The etching stopper film, the ratio by atomic% of the content of the silicon to the total content of the silicon and the aluminum, the mask blank according to claim 8 or 9, wherein the at 4/5 or less. The etching stopper film, a mask blank according to any one of claims 8 to 10, characterized in that consisting of silicon, aluminum and oxygen. The etching stopper film, a mask blank according to any one of claims 8 11, wherein the thickness is 3nm or more.   The mask blank according to claim 1, wherein the light shielding film is made of a material containing a transition metal and silicon. The mask blank according to claim 13, further comprising a hard mask film made of a material containing chromium on the light shielding film.   A phase shift mask, wherein a phase shift pattern is formed on the phase shift film of the mask blank according to claim 1, and a light shielding pattern is formed on the light shielding film. A method of manufacturing a phase shift mask using the mask blank according to any one of claims 1 to 14,
Forming a phase shift pattern on the light shielding film by dry etching;
Forming a phase shift pattern in the upper layer by dry etching using an etching gas containing boron chloride gas using the light shielding film having the phase shift pattern as a mask;
Forming a phase shift pattern in the lower layer by dry etching using an etching gas containing a fluorine-based gas using the light-shielding film having the phase shift pattern as a mask;
And a step of forming a pattern including a light-shielding band on the light-shielding film by dry etching.   16. A method of manufacturing a semiconductor device, comprising using the phase shift mask according to claim 15 and exposing and transferring a transfer pattern onto a resist film on a semiconductor substrate.   A method for manufacturing a semiconductor device, comprising: a step of exposing and transferring a transfer pattern onto a resist film on a semiconductor substrate using the phase shift mask manufactured by the method for manufacturing a phase shift mask according to claim 16.