SG10201602448YA - Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method - Google Patents
Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure MethodInfo
- Publication number
- SG10201602448YA SG10201602448YA SG10201602448YA SG10201602448YA SG10201602448YA SG 10201602448Y A SG10201602448Y A SG 10201602448YA SG 10201602448Y A SG10201602448Y A SG 10201602448YA SG 10201602448Y A SG10201602448Y A SG 10201602448YA SG 10201602448Y A SG10201602448Y A SG 10201602448YA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- halftone phase
- exposure method
- pattern exposure
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/28—Processing photosensitive materials; Apparatus therefor for obtaining powder images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015073045A JP6380204B2 (en) | 2015-03-31 | 2015-03-31 | Halftone phase shift mask blank, halftone phase shift mask and pattern exposure method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201602448YA true SG10201602448YA (en) | 2016-10-28 |
Family
ID=55587143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201602448YA SG10201602448YA (en) | 2015-03-31 | 2016-03-29 | Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Pattern Exposure Method |
Country Status (7)
Country | Link |
---|---|
US (1) | US9927695B2 (en) |
EP (1) | EP3086180B1 (en) |
JP (1) | JP6380204B2 (en) |
KR (1) | KR101899202B1 (en) |
CN (1) | CN106019809B (en) |
SG (1) | SG10201602448YA (en) |
TW (1) | TWI663467B (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10678125B2 (en) * | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
JP6743679B2 (en) | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
WO2018181891A1 (en) * | 2017-03-31 | 2018-10-04 | 凸版印刷株式会社 | Phase shift mask blank, phase shift mask and manufacturing method for phase shift mask |
JP6432636B2 (en) | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | Photomask blank, photomask and photomask manufacturing method |
JP6791031B2 (en) * | 2017-06-13 | 2020-11-25 | 信越化学工業株式会社 | Photomask blank and its manufacturing method |
JP6753375B2 (en) * | 2017-07-28 | 2020-09-09 | 信越化学工業株式会社 | Photomask blank, photomask blank manufacturing method and photomask manufacturing method |
JP6998181B2 (en) * | 2017-11-14 | 2022-02-04 | アルバック成膜株式会社 | Mask blank, phase shift mask and its manufacturing method |
US11333966B2 (en) | 2017-11-24 | 2022-05-17 | Hoya Corporation | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
SG11202007542WA (en) * | 2018-02-27 | 2020-09-29 | Hoya Corp | Mask blank, phase shift mask, and method of manufacturing semiconductor device |
JP6896694B2 (en) * | 2018-12-25 | 2021-06-30 | Hoya株式会社 | Mask blank, phase shift mask, phase shift mask manufacturing method and semiconductor device manufacturing method |
JP7264083B2 (en) * | 2019-03-29 | 2023-04-25 | 信越化学工業株式会社 | PHASE SHIFT MASK BLANKS, MANUFACTURING METHOD THEREOF AND PHASE SHIFT MASK |
CN115343910A (en) * | 2021-05-12 | 2022-11-15 | 上海传芯半导体有限公司 | Phase-shifting mask and manufacturing method thereof |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
JP3286103B2 (en) * | 1995-02-15 | 2002-05-27 | 株式会社東芝 | Method and apparatus for manufacturing exposure mask |
KR0166497B1 (en) * | 1995-03-24 | 1999-01-15 | 김주용 | Phase inversion mask and the method of production therefrom |
US5939227A (en) * | 1998-03-09 | 1999-08-17 | Rochester Institute Of Technology | Multi-layered attenuated phase shift mask and a method for making the mask |
JP2002169265A (en) * | 2000-12-01 | 2002-06-14 | Hoya Corp | Photomask blank and method of manufacturing photomask blank |
JP3988041B2 (en) | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | Halftone phase shift mask blank and manufacturing method thereof |
TWI480675B (en) * | 2004-03-31 | 2015-04-11 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
KR100967995B1 (en) * | 2004-06-16 | 2010-07-07 | 호야 가부시키가이샤 | Semitransmitting film, photomask blank, photomask, and semitransmitting film designing method |
JP5165833B2 (en) * | 2005-02-04 | 2013-03-21 | 信越化学工業株式会社 | Photomask blank, photomask, and photomask blank manufacturing method |
JP4933753B2 (en) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
EP1746460B1 (en) | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
JP4551344B2 (en) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | Photomask blank and photomask |
JP4509050B2 (en) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
JP4714180B2 (en) | 2007-05-01 | 2011-06-29 | 株式会社東芝 | Photomask management method, photomask cleaning possible number generation method, and photomask management system |
EP2209048B1 (en) * | 2009-01-15 | 2013-09-04 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing a photomask, and dry etching method |
JP5644293B2 (en) * | 2010-09-10 | 2014-12-24 | 信越化学工業株式会社 | Method of designing transition metal silicon-based material film |
KR102166222B1 (en) | 2013-01-15 | 2020-10-15 | 호야 가부시키가이샤 | Mask blank, phase-shift mask, and method for manufacturing mask blank and phase-shift mask |
JP6373607B2 (en) * | 2013-03-08 | 2018-08-15 | Hoya株式会社 | Manufacturing method of mask blank and manufacturing method of phase shift mask |
US9874808B2 (en) * | 2013-08-21 | 2018-01-23 | Dai Nippon Printing Co., Ltd. | Mask blank, mask blank with negative resist film, phase shift mask, and method for producing pattern formed body using same |
JP6524614B2 (en) * | 2014-05-27 | 2019-06-05 | 大日本印刷株式会社 | Mask blanks, mask blanks with negative resist film, phase shift mask, and method of manufacturing patterned body using the same |
-
2015
- 2015-03-31 JP JP2015073045A patent/JP6380204B2/en active Active
-
2016
- 2016-03-18 EP EP16161074.6A patent/EP3086180B1/en active Active
- 2016-03-23 US US15/078,618 patent/US9927695B2/en active Active
- 2016-03-28 KR KR1020160036801A patent/KR101899202B1/en active IP Right Grant
- 2016-03-29 SG SG10201602448YA patent/SG10201602448YA/en unknown
- 2016-03-30 TW TW105110126A patent/TWI663467B/en active
- 2016-03-31 CN CN201610195910.9A patent/CN106019809B/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9927695B2 (en) | 2018-03-27 |
JP6380204B2 (en) | 2018-08-29 |
TWI663467B (en) | 2019-06-21 |
TW201704848A (en) | 2017-02-01 |
JP2016191882A (en) | 2016-11-10 |
CN106019809B (en) | 2020-11-10 |
KR101899202B1 (en) | 2018-09-14 |
EP3086180B1 (en) | 2020-04-29 |
US20160291456A1 (en) | 2016-10-06 |
KR20160117250A (en) | 2016-10-10 |
EP3086180A1 (en) | 2016-10-26 |
CN106019809A (en) | 2016-10-12 |
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