SG10201706361UA - Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus - Google Patents
Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming ApparatusInfo
- Publication number
- SG10201706361UA SG10201706361UA SG10201706361UA SG10201706361UA SG10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA SG 10201706361U A SG10201706361U A SG 10201706361UA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- halftone phase
- mask blank
- thin film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016162620A JP6558326B2 (en) | 2016-08-23 | 2016-08-23 | Halftone phase shift mask blank manufacturing method, halftone phase shift mask blank, halftone phase shift mask, and thin film forming apparatus for photomask blank |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201706361UA true SG10201706361UA (en) | 2018-03-28 |
Family
ID=59523013
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201706361UA SG10201706361UA (en) | 2016-08-23 | 2017-08-03 | Method For Preparing Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask Blank, Halftone Phase Shift Mask, And Thin Film Forming Apparatus |
Country Status (7)
Country | Link |
---|---|
US (2) | US10466582B2 (en) |
EP (2) | EP3627223B1 (en) |
JP (1) | JP6558326B2 (en) |
KR (2) | KR102239283B1 (en) |
CN (1) | CN107765508B (en) |
SG (1) | SG10201706361UA (en) |
TW (2) | TWI724226B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10678125B2 (en) * | 2016-03-02 | 2020-06-09 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for preparing photomask |
JP6743679B2 (en) | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
SG11201811413QA (en) * | 2016-07-25 | 2019-02-27 | Hoya Corp | Mask blank, transfer mask, method for producing transfer mask, and method for manufacturing semiconductor device |
US11156912B2 (en) * | 2017-09-29 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography mask and method for manufacturing the same |
WO2019188397A1 (en) * | 2018-03-26 | 2019-10-03 | Hoya株式会社 | Mask blank, phase shift mask, and method for manufacturing semiconductor device |
JP7151774B2 (en) * | 2018-09-14 | 2022-10-12 | 株式会社ニコン | Phase shift mask blanks, phase shift mask, exposure method, device manufacturing method, phase shift mask blank manufacturing method, phase shift mask manufacturing method, exposure method, and device manufacturing method |
JP7264083B2 (en) * | 2019-03-29 | 2023-04-25 | 信越化学工業株式会社 | PHASE SHIFT MASK BLANKS, MANUFACTURING METHOD THEREOF AND PHASE SHIFT MASK |
JP7192731B2 (en) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
US5674647A (en) | 1992-11-21 | 1997-10-07 | Ulvac Coating Corporation | Phase shift mask and manufacturing method thereof and exposure method using phase shift mask |
JP2003253439A (en) * | 2002-03-01 | 2003-09-10 | Ulvac Japan Ltd | Sputtering system |
US6872496B2 (en) * | 2002-10-31 | 2005-03-29 | Taiwan Semiconductor Manufacturing Company | AlSixOy as a new bi-layer high transmittance attenuating phase shifting mask material for 193 nanometer lithography |
US7344806B2 (en) * | 2003-03-31 | 2008-03-18 | Shin-Etsu Chemical Co., Ltd. | Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask |
JP2004301993A (en) * | 2003-03-31 | 2004-10-28 | Shin Etsu Chem Co Ltd | Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask, and phase shift mask blank and phase shift mask |
TWI305865B (en) * | 2003-03-31 | 2009-02-01 | Shinetsu Chemical Co | Photomask blank, photomask, and method of manufacture |
TWI480675B (en) * | 2004-03-31 | 2015-04-11 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
JP4933753B2 (en) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
DE602006021102D1 (en) | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
JP4551344B2 (en) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | Photomask blank and photomask |
JP4509050B2 (en) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
US20080044740A1 (en) * | 2006-08-21 | 2008-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photomask having haze reduction layer |
JP5530075B2 (en) * | 2008-03-31 | 2014-06-25 | Hoya株式会社 | Photomask blank, photomask, and manufacturing method thereof |
JP5879951B2 (en) * | 2011-11-21 | 2016-03-08 | 信越化学工業株式会社 | Optical pattern irradiation method, halftone phase shift mask, and halftone phase shift mask blank |
SG11201505225TA (en) * | 2012-08-03 | 2015-08-28 | Semiconductor Energy Lab | Oxide semiconductor stacked film and semiconductor device |
CN108389944B (en) * | 2012-08-21 | 2021-04-02 | 王子控股株式会社 | Substrate for semiconductor light emitting element and semiconductor light emitting element |
WO2014050891A1 (en) * | 2012-09-28 | 2014-04-03 | 旭硝子株式会社 | Reflective mask blank for euv-lithography and manufacturing method therefor, and reflective mask for euv-lithography and manufacturing method therefor |
US9540526B2 (en) * | 2012-10-19 | 2017-01-10 | Konica Minolta, Inc. | Gas barrier film and method for manufacturing gas barrier film |
US9625806B2 (en) * | 2013-01-15 | 2017-04-18 | Hoya Corporation | Mask blank, phase-shift mask, and method for manufacturing the same |
SG11201505421SA (en) * | 2013-01-18 | 2015-08-28 | Hoya Corp | Method for manufacturing mask blank substrate, method for manufacturing mask blank and method for manufacturing transfer mask |
JP6373607B2 (en) * | 2013-03-08 | 2018-08-15 | Hoya株式会社 | Manufacturing method of mask blank and manufacturing method of phase shift mask |
JP6264238B2 (en) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method |
JP6323295B2 (en) * | 2014-10-20 | 2018-05-16 | 信越化学工業株式会社 | Pattern forming method and chemically amplified negative resist composition |
JP6463992B2 (en) | 2015-03-03 | 2019-02-06 | Piaa株式会社 | Vehicle lighting |
-
2016
- 2016-08-23 JP JP2016162620A patent/JP6558326B2/en active Active
-
2017
- 2017-08-03 EP EP19208981.1A patent/EP3627223B1/en active Active
- 2017-08-03 SG SG10201706361UA patent/SG10201706361UA/en unknown
- 2017-08-03 EP EP17184764.3A patent/EP3287845B1/en active Active
- 2017-08-11 US US15/674,709 patent/US10466582B2/en active Active
- 2017-08-18 KR KR1020170104498A patent/KR102239283B1/en active IP Right Grant
- 2017-08-22 CN CN201710723039.XA patent/CN107765508B/en active Active
- 2017-08-22 TW TW106128356A patent/TWI724226B/en active
- 2017-08-22 TW TW109138425A patent/TWI746247B/en active
-
2019
- 2019-09-26 US US16/584,021 patent/US10809611B2/en active Active
-
2021
- 2021-04-06 KR KR1020210044675A patent/KR102329747B1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US10466582B2 (en) | 2019-11-05 |
TW201821897A (en) | 2018-06-16 |
US20180059532A1 (en) | 2018-03-01 |
KR20210041549A (en) | 2021-04-15 |
JP6558326B2 (en) | 2019-08-14 |
KR20180022584A (en) | 2018-03-06 |
EP3287845A1 (en) | 2018-02-28 |
EP3287845B1 (en) | 2019-12-18 |
TW202115485A (en) | 2021-04-16 |
TWI746247B (en) | 2021-11-11 |
EP3627223B1 (en) | 2021-06-16 |
US20200026180A1 (en) | 2020-01-23 |
KR102329747B1 (en) | 2021-11-23 |
EP3627223A1 (en) | 2020-03-25 |
TWI724226B (en) | 2021-04-11 |
US10809611B2 (en) | 2020-10-20 |
KR102239283B1 (en) | 2021-04-12 |
JP2018031840A (en) | 2018-03-01 |
CN107765508A (en) | 2018-03-06 |
CN107765508B (en) | 2022-10-04 |
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