SG10201913035VA - Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask - Google Patents
Halftone Phase Shift Mask Blank And Halftone Phase Shift MaskInfo
- Publication number
- SG10201913035VA SG10201913035VA SG10201913035VA SG10201913035VA SG10201913035VA SG 10201913035V A SG10201913035V A SG 10201913035VA SG 10201913035V A SG10201913035V A SG 10201913035VA SG 10201913035V A SG10201913035V A SG 10201913035VA SG 10201913035V A SG10201913035V A SG 10201913035VA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- halftone phase
- mask blank
- blank
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016190050A JP6733464B2 (en) | 2016-09-28 | 2016-09-28 | Halftone phase shift mask blank and halftone phase shift mask |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201913035VA true SG10201913035VA (en) | 2020-02-27 |
Family
ID=59923351
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201707730PA SG10201707730PA (en) | 2016-09-28 | 2017-09-19 | Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask |
SG10201913035VA SG10201913035VA (en) | 2016-09-28 | 2017-09-19 | Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201707730PA SG10201707730PA (en) | 2016-09-28 | 2017-09-19 | Halftone Phase Shift Mask Blank And Halftone Phase Shift Mask |
Country Status (7)
Country | Link |
---|---|
US (2) | US10466583B2 (en) |
EP (1) | EP3309612B1 (en) |
JP (1) | JP6733464B2 (en) |
KR (1) | KR102228886B1 (en) |
CN (1) | CN107870507B (en) |
SG (2) | SG10201707730PA (en) |
TW (1) | TWI777979B (en) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102366782B1 (en) * | 2016-07-25 | 2022-02-23 | 호야 가부시키가이샤 | Mask blank, transfer mask, transfer mask manufacturing method, and semiconductor device manufacturing method |
JP6733464B2 (en) * | 2016-09-28 | 2020-07-29 | 信越化学工業株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
JP7151774B2 (en) * | 2018-09-14 | 2022-10-12 | 株式会社ニコン | Phase shift mask blanks, phase shift mask, exposure method, device manufacturing method, phase shift mask blank manufacturing method, phase shift mask manufacturing method, exposure method, and device manufacturing method |
JP6927177B2 (en) * | 2018-09-26 | 2021-08-25 | 信越化学工業株式会社 | Phase shift photomask blank and phase shift photomask |
JP7115281B2 (en) * | 2018-12-12 | 2022-08-09 | 信越化学工業株式会社 | Photomask blank and photomask manufacturing method |
JP7255512B2 (en) * | 2019-03-29 | 2023-04-11 | 信越化学工業株式会社 | Phase shift mask blank and phase shift mask |
JP7192731B2 (en) * | 2019-09-27 | 2022-12-20 | 信越化学工業株式会社 | Halftone phase shift photomask blank, manufacturing method thereof, and halftone phase shift photomask |
CN111232915B (en) * | 2020-01-20 | 2023-10-10 | 北京晨晶电子有限公司 | Multi-layer mask layer structure, preparation method thereof and MEMS device |
JP7331793B2 (en) * | 2020-06-30 | 2023-08-23 | 信越化学工業株式会社 | Photomask manufacturing method and photomask blank |
KR102273211B1 (en) | 2020-08-25 | 2021-07-05 | 에스케이씨솔믹스 주식회사 | Blankmask and photomask using the same |
JP7329031B2 (en) | 2020-12-31 | 2023-08-17 | エスケー エンパルス カンパニー リミテッド | Blank mask and photomask using it |
KR102400199B1 (en) | 2020-12-31 | 2022-05-18 | 에스케이씨솔믹스 주식회사 | Manufacturing apparatus of semiconductor device |
KR102349368B1 (en) | 2021-02-25 | 2022-01-07 | 에스케이씨솔믹스 주식회사 | Apparatus for manufacturing semiconductor device |
KR102349366B1 (en) | 2021-03-31 | 2022-01-07 | 에스케이씨솔믹스 주식회사 | Apparatus for manufacturing semiconductor device |
KR102349367B1 (en) | 2020-12-31 | 2022-01-07 | 에스케이씨솔믹스 주식회사 | Apparatus for manufacturing semiconductor device |
KR20230114428A (en) | 2022-01-25 | 2023-08-01 | 주식회사 맨드림 | Method for Producing Tomato Pickle and Tomato Pickle Produced by the Same Method |
KR20230114427A (en) | 2022-01-25 | 2023-08-01 | 주식회사 맨드림 | Composition for Improving Skin Conditions Comprising Complex Extract of Sweet Potato and Peach Seed as Active Ingredient |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
JP4332697B2 (en) * | 2002-01-10 | 2009-09-16 | 信越化学工業株式会社 | Sputter target |
JP3988041B2 (en) | 2002-10-08 | 2007-10-10 | 信越化学工業株式会社 | Halftone phase shift mask blank and manufacturing method thereof |
TWI480675B (en) | 2004-03-31 | 2015-04-11 | Shinetsu Chemical Co | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
JP4535241B2 (en) * | 2004-03-31 | 2010-09-01 | 凸版印刷株式会社 | Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method |
DE102004018424B4 (en) * | 2004-04-08 | 2016-12-08 | Docter Optics Se | Process for producing a lens |
DE602006021102D1 (en) | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
JP4933753B2 (en) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
JP4551344B2 (en) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | Photomask blank and photomask |
JP4509050B2 (en) * | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
JP2007279214A (en) * | 2006-04-04 | 2007-10-25 | Shin Etsu Chem Co Ltd | Photomask blank and its manufacturing method, and photomask and its manufacturing method |
JP4714180B2 (en) | 2007-05-01 | 2011-06-29 | 株式会社東芝 | Photomask management method, photomask cleaning possible number generation method, and photomask management system |
TWI453531B (en) * | 2008-06-25 | 2014-09-21 | Hoya Corp | Phase shift mask blank and phase shift mask |
US20100119958A1 (en) * | 2008-11-11 | 2010-05-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask blank, mask formed from the blank, and method of forming a mask |
TWI519888B (en) * | 2010-04-09 | 2016-02-01 | Hoya Corp | Phase shift mask substrate and its manufacturing method, with phase shift mask |
JP6264238B2 (en) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method |
US9933698B2 (en) * | 2014-03-18 | 2018-04-03 | Hoya Corporation | Mask blank, phase-shift mask and method for manufacturing semiconductor device |
JP6341129B2 (en) * | 2015-03-31 | 2018-06-13 | 信越化学工業株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
JP6733464B2 (en) * | 2016-09-28 | 2020-07-29 | 信越化学工業株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
-
2016
- 2016-09-28 JP JP2016190050A patent/JP6733464B2/en active Active
-
2017
- 2017-09-19 SG SG10201707730PA patent/SG10201707730PA/en unknown
- 2017-09-19 SG SG10201913035VA patent/SG10201913035VA/en unknown
- 2017-09-20 EP EP17192227.1A patent/EP3309612B1/en active Active
- 2017-09-25 KR KR1020170123117A patent/KR102228886B1/en active IP Right Grant
- 2017-09-27 US US15/717,136 patent/US10466583B2/en active Active
- 2017-09-27 TW TW106133058A patent/TWI777979B/en active
- 2017-09-28 CN CN201710900085.2A patent/CN107870507B/en active Active
-
2019
- 2019-09-27 US US16/586,278 patent/US10989999B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN107870507B (en) | 2023-02-28 |
US20180088457A1 (en) | 2018-03-29 |
JP6733464B2 (en) | 2020-07-29 |
EP3309612B1 (en) | 2022-04-27 |
US10989999B2 (en) | 2021-04-27 |
KR102228886B1 (en) | 2021-03-17 |
US10466583B2 (en) | 2019-11-05 |
CN107870507A (en) | 2018-04-03 |
KR20180035146A (en) | 2018-04-05 |
JP2018054836A (en) | 2018-04-05 |
TW201823851A (en) | 2018-07-01 |
EP3309612A1 (en) | 2018-04-18 |
TWI777979B (en) | 2022-09-21 |
SG10201707730PA (en) | 2018-04-27 |
US20200026181A1 (en) | 2020-01-23 |
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