SG11201913862WA - Reflective photomask blank and reflective photomask - Google Patents

Reflective photomask blank and reflective photomask

Info

Publication number
SG11201913862WA
SG11201913862WA SG11201913862WA SG11201913862WA SG11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA
Authority
SG
Singapore
Prior art keywords
reflective photomask
blank
reflective
photomask blank
photomask
Prior art date
Application number
SG11201913862WA
Inventor
Toru Komizo
Norihito Fukugami
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of SG11201913862WA publication Critical patent/SG11201913862WA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52Reflectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201913862WA 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask SG11201913862WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017132027 2017-07-05
PCT/JP2018/024890 WO2019009212A1 (en) 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask

Publications (1)

Publication Number Publication Date
SG11201913862WA true SG11201913862WA (en) 2020-01-30

Family

ID=64950999

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913862WA SG11201913862WA (en) 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask

Country Status (8)

Country Link
US (1) US11067886B2 (en)
EP (1) EP3650935A4 (en)
JP (2) JP7169970B2 (en)
KR (1) KR102632988B1 (en)
CN (1) CN110785704A (en)
SG (1) SG11201913862WA (en)
TW (1) TWI770217B (en)
WO (1) WO2019009212A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6919699B2 (en) * 2019-11-28 2021-08-18 凸版印刷株式会社 Reflective photomask blank and reflective photomask
JP2021179549A (en) * 2020-05-14 2021-11-18 凸版印刷株式会社 Reflective mask blank and reflective mask
WO2024029409A1 (en) * 2022-08-03 2024-02-08 Agc株式会社 Reflective mask blank and reflective mask

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070134560A1 (en) * 2003-12-22 2007-06-14 Koninklijke Philips Electronic, N.V. Lithography system using a programmable electro-wetting mask
JP5194888B2 (en) 2007-09-27 2013-05-08 凸版印刷株式会社 REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF
JP5332741B2 (en) * 2008-09-25 2013-11-06 凸版印刷株式会社 Reflective photomask
JP5609865B2 (en) * 2009-04-02 2014-10-22 凸版印刷株式会社 Reflective photomask and reflective photomask blank
EP2453464A1 (en) * 2009-07-08 2012-05-16 Asahi Glass Company, Limited Euv-lithography reflection-type mask blank
JP5418293B2 (en) 2010-02-25 2014-02-19 凸版印刷株式会社 Reflective photomask, reflective photomask blank, and method of manufacturing the same
JP5830089B2 (en) 2010-06-15 2015-12-09 カール・ツァイス・エスエムティー・ゲーエムベーハー Mask for EUV lithography, EUV lithography system, and method for optimizing mask imaging
KR101877896B1 (en) * 2013-09-27 2018-07-12 호야 가부시키가이샤 Substrate provided with conductive film, substrate provided with multi-layer reflection film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
US9529250B2 (en) * 2014-10-31 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask with ITO absorber to suppress out of band radiation
JP6888258B2 (en) * 2016-09-15 2021-06-16 凸版印刷株式会社 Reflective photomask and reflective photomask blank
JP6915280B2 (en) 2017-01-23 2021-08-04 凸版印刷株式会社 Reflective photomask and reflective photomask blank

Also Published As

Publication number Publication date
EP3650935A1 (en) 2020-05-13
KR102632988B1 (en) 2024-02-01
TW201907223A (en) 2019-02-16
JP2022003417A (en) 2022-01-11
JPWO2019009212A1 (en) 2020-05-07
JP7279131B2 (en) 2023-05-22
EP3650935A4 (en) 2020-08-05
TWI770217B (en) 2022-07-11
CN110785704A (en) 2020-02-11
KR20200019629A (en) 2020-02-24
US11067886B2 (en) 2021-07-20
US20200218143A1 (en) 2020-07-09
WO2019009212A1 (en) 2019-01-10
JP7169970B2 (en) 2022-11-11

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