SG11201913862WA - Reflective photomask blank and reflective photomask - Google Patents
Reflective photomask blank and reflective photomaskInfo
- Publication number
- SG11201913862WA SG11201913862WA SG11201913862WA SG11201913862WA SG11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA SG 11201913862W A SG11201913862W A SG 11201913862WA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective photomask
- blank
- reflective
- photomask blank
- photomask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017132027 | 2017-07-05 | ||
PCT/JP2018/024890 WO2019009212A1 (en) | 2017-07-05 | 2018-06-29 | Reflective photomask blank and reflective photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201913862WA true SG11201913862WA (en) | 2020-01-30 |
Family
ID=64950999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201913862WA SG11201913862WA (en) | 2017-07-05 | 2018-06-29 | Reflective photomask blank and reflective photomask |
Country Status (8)
Country | Link |
---|---|
US (1) | US11067886B2 (en) |
EP (1) | EP3650935A4 (en) |
JP (2) | JP7169970B2 (en) |
KR (1) | KR102632988B1 (en) |
CN (1) | CN110785704A (en) |
SG (1) | SG11201913862WA (en) |
TW (1) | TWI770217B (en) |
WO (1) | WO2019009212A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6919699B2 (en) * | 2019-11-28 | 2021-08-18 | 凸版印刷株式会社 | Reflective photomask blank and reflective photomask |
JP2021179549A (en) * | 2020-05-14 | 2021-11-18 | 凸版印刷株式会社 | Reflective mask blank and reflective mask |
WO2024029409A1 (en) * | 2022-08-03 | 2024-02-08 | Agc株式会社 | Reflective mask blank and reflective mask |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070134560A1 (en) * | 2003-12-22 | 2007-06-14 | Koninklijke Philips Electronic, N.V. | Lithography system using a programmable electro-wetting mask |
JP5194888B2 (en) | 2007-09-27 | 2013-05-08 | 凸版印刷株式会社 | REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF |
JP5332741B2 (en) * | 2008-09-25 | 2013-11-06 | 凸版印刷株式会社 | Reflective photomask |
JP5609865B2 (en) * | 2009-04-02 | 2014-10-22 | 凸版印刷株式会社 | Reflective photomask and reflective photomask blank |
EP2453464A1 (en) * | 2009-07-08 | 2012-05-16 | Asahi Glass Company, Limited | Euv-lithography reflection-type mask blank |
JP5418293B2 (en) | 2010-02-25 | 2014-02-19 | 凸版印刷株式会社 | Reflective photomask, reflective photomask blank, and method of manufacturing the same |
JP5830089B2 (en) | 2010-06-15 | 2015-12-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Mask for EUV lithography, EUV lithography system, and method for optimizing mask imaging |
KR101877896B1 (en) * | 2013-09-27 | 2018-07-12 | 호야 가부시키가이샤 | Substrate provided with conductive film, substrate provided with multi-layer reflection film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
US9529250B2 (en) * | 2014-10-31 | 2016-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | EUV mask with ITO absorber to suppress out of band radiation |
JP6888258B2 (en) * | 2016-09-15 | 2021-06-16 | 凸版印刷株式会社 | Reflective photomask and reflective photomask blank |
JP6915280B2 (en) | 2017-01-23 | 2021-08-04 | 凸版印刷株式会社 | Reflective photomask and reflective photomask blank |
-
2018
- 2018-06-29 EP EP18827918.6A patent/EP3650935A4/en active Pending
- 2018-06-29 CN CN201880042388.8A patent/CN110785704A/en active Pending
- 2018-06-29 KR KR1020197037743A patent/KR102632988B1/en active IP Right Grant
- 2018-06-29 SG SG11201913862WA patent/SG11201913862WA/en unknown
- 2018-06-29 WO PCT/JP2018/024890 patent/WO2019009212A1/en unknown
- 2018-06-29 JP JP2019527678A patent/JP7169970B2/en active Active
- 2018-06-29 US US16/625,652 patent/US11067886B2/en active Active
- 2018-07-05 TW TW107123247A patent/TWI770217B/en active
-
2021
- 2021-10-13 JP JP2021168248A patent/JP7279131B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3650935A1 (en) | 2020-05-13 |
KR102632988B1 (en) | 2024-02-01 |
TW201907223A (en) | 2019-02-16 |
JP2022003417A (en) | 2022-01-11 |
JPWO2019009212A1 (en) | 2020-05-07 |
JP7279131B2 (en) | 2023-05-22 |
EP3650935A4 (en) | 2020-08-05 |
TWI770217B (en) | 2022-07-11 |
CN110785704A (en) | 2020-02-11 |
KR20200019629A (en) | 2020-02-24 |
US11067886B2 (en) | 2021-07-20 |
US20200218143A1 (en) | 2020-07-09 |
WO2019009212A1 (en) | 2019-01-10 |
JP7169970B2 (en) | 2022-11-11 |
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