SG11202104920UA - Reflective photomask blank and reflective photomask - Google Patents

Reflective photomask blank and reflective photomask

Info

Publication number
SG11202104920UA
SG11202104920UA SG11202104920UA SG11202104920UA SG11202104920UA SG 11202104920U A SG11202104920U A SG 11202104920UA SG 11202104920U A SG11202104920U A SG 11202104920UA SG 11202104920U A SG11202104920U A SG 11202104920UA SG 11202104920U A SG11202104920U A SG 11202104920UA
Authority
SG
Singapore
Prior art keywords
reflective photomask
blank
reflective
photomask blank
photomask
Prior art date
Application number
SG11202104920UA
Inventor
Toru Komizo
Norihito Fukugami
Genta Watanabe
Eisuke Narita
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of SG11202104920UA publication Critical patent/SG11202104920UA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
SG11202104920UA 2018-11-15 2019-11-01 Reflective photomask blank and reflective photomask SG11202104920UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018214833 2018-11-15
PCT/JP2019/043070 WO2020100632A1 (en) 2018-11-15 2019-11-01 Reflective photomask blank and reflective photomask

Publications (1)

Publication Number Publication Date
SG11202104920UA true SG11202104920UA (en) 2021-06-29

Family

ID=70730637

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202104920UA SG11202104920UA (en) 2018-11-15 2019-11-01 Reflective photomask blank and reflective photomask

Country Status (8)

Country Link
US (1) US11906896B2 (en)
EP (1) EP3882698A4 (en)
JP (1) JP6879437B2 (en)
KR (1) KR20210088582A (en)
CN (1) CN112997116A (en)
SG (1) SG11202104920UA (en)
TW (1) TWI826587B (en)
WO (1) WO2020100632A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102464780B1 (en) * 2020-09-02 2022-11-09 주식회사 에스앤에스텍 Blankmask with Backside Conductive Layer, and Photomask manufactured with the same
JP6966013B1 (en) * 2020-10-14 2021-11-10 凸版印刷株式会社 Manufacturing method of reflective mask and reflective mask
US11940725B2 (en) 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography
JP2022124344A (en) * 2021-02-15 2022-08-25 株式会社トッパンフォトマスク Reflective photomask blank and reflective photomask
JP2022185356A (en) * 2021-06-02 2022-12-14 株式会社トッパンフォトマスク Reflective photomask blank and reflective photomask
JP7117445B1 (en) 2021-12-15 2022-08-12 株式会社トッパンフォトマスク Reflective photomask blanks and reflective photomasks
TW202347008A (en) * 2022-03-29 2023-12-01 日商凸版光掩模有限公司 Reflective photomask blank and reflective photomask

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4397496B2 (en) 2000-02-25 2010-01-13 Okiセミコンダクタ株式会社 Reflective exposure mask and EUV exposure apparatus
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
JP4926523B2 (en) * 2006-03-31 2012-05-09 Hoya株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
TWI444757B (en) 2006-04-21 2014-07-11 Asahi Glass Co Ltd Reflective mask blank for euv lithography
CN102016717B (en) * 2008-04-23 2012-10-10 旭硝子株式会社 Reflective mask blank for EUV lithography, and reflective mask for EUV lithography
JP5332741B2 (en) * 2008-09-25 2013-11-06 凸版印刷株式会社 Reflective photomask
KR20120034074A (en) 2009-07-08 2012-04-09 아사히 가라스 가부시키가이샤 Euv-lithography reflection-type mask blank
US9581889B2 (en) 2014-07-11 2017-02-28 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
US9529250B2 (en) * 2014-10-31 2016-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. EUV mask with ITO absorber to suppress out of band radiation
KR101579852B1 (en) 2015-03-25 2015-12-23 주식회사 에스앤에스텍 Blankmask for extreme ultra-violet lithography and photomask using the same
JP6915280B2 (en) 2017-01-23 2021-08-04 凸版印刷株式会社 Reflective photomask and reflective photomask blank
EP3454119B1 (en) 2017-09-09 2023-12-27 IMEC vzw Euv absorbing alloys

Also Published As

Publication number Publication date
CN112997116A (en) 2021-06-18
JP6879437B2 (en) 2021-06-02
EP3882698A4 (en) 2022-08-17
WO2020100632A1 (en) 2020-05-22
TWI826587B (en) 2023-12-21
US11906896B2 (en) 2024-02-20
US20220011662A1 (en) 2022-01-13
KR20210088582A (en) 2021-07-14
EP3882698A1 (en) 2021-09-22
TW202029279A (en) 2020-08-01
JPWO2020100632A1 (en) 2021-05-20

Similar Documents

Publication Publication Date Title
SG11202104920UA (en) Reflective photomask blank and reflective photomask
IL279321A (en) Anti-sirpα antibody
IL275737A (en) Antibodies and variants thereof against tigit
IL278171A (en) Gip derivatives and uses thereof
SG11201913845YA (en) Reflective photomask blank and reflective photomask
ZA202006904B (en) Anti-il-4r antibody and use thereof
SG11202113285VA (en) Reflective photomask blank and reflective photomask
SG11202100746WA (en) Anti-tigit antibody and use thereof
ZA202101177B (en) Anti-btla antibody
EP3567054A4 (en) Anti-alpha-syn antibody and use thereof
GB201811368D0 (en) Antibody
SG11201913862WA (en) Reflective photomask blank and reflective photomask
GB201817172D0 (en) Antibody
SG10201908738VA (en) Phase shift-type photomask blank and phase shift-type photomask
PT3796975T (en) Sulfinylaminobenzamide and sulfonylaminobenzamide derivatives
PL3222552T3 (en) Carton and blank therefor
TWI799465B (en) Carton and blank therefor
EP4067994A4 (en) Reflective photomask blank and reflective photomask
ZA201907186B (en) Packaging and blank therefor
ZA201907185B (en) Packaging and blank therefor
IL269597A (en) Packaging and blank therefor
SG10201910692SA (en) Photomask blank, and method of manufacturing photomask
EP3604336A4 (en) Anti-emap ii antibody and use thereof
EP4145221A4 (en) Reflective photomask blank and reflective photomask
FI12565U1 (en) Package and package blank