SG11201913845YA - Reflective photomask blank and reflective photomask - Google Patents

Reflective photomask blank and reflective photomask

Info

Publication number
SG11201913845YA
SG11201913845YA SG11201913845YA SG11201913845YA SG11201913845YA SG 11201913845Y A SG11201913845Y A SG 11201913845YA SG 11201913845Y A SG11201913845Y A SG 11201913845YA SG 11201913845Y A SG11201913845Y A SG 11201913845YA SG 11201913845Y A SG11201913845Y A SG 11201913845YA
Authority
SG
Singapore
Prior art keywords
reflective photomask
blank
reflective
photomask blank
photomask
Prior art date
Application number
SG11201913845YA
Inventor
Norihito Fukugami
Toru Komizo
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Publication of SG11201913845YA publication Critical patent/SG11201913845YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
SG11201913845YA 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask SG11201913845YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017132026 2017-07-05
PCT/JP2018/024889 WO2019009211A1 (en) 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask

Publications (1)

Publication Number Publication Date
SG11201913845YA true SG11201913845YA (en) 2020-01-30

Family

ID=64950081

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913845YA SG11201913845YA (en) 2017-07-05 2018-06-29 Reflective photomask blank and reflective photomask

Country Status (7)

Country Link
US (1) US11294270B2 (en)
EP (1) EP3650936A4 (en)
JP (1) JP6888675B2 (en)
CN (1) CN110785703B (en)
SG (1) SG11201913845YA (en)
TW (1) TWI761546B (en)
WO (1) WO2019009211A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102644109B1 (en) 2019-10-29 2024-03-07 에이지씨 가부시키가이샤 Reflective mask blanks and reflective masks
JP7354005B2 (en) 2020-02-12 2023-10-02 Hoya株式会社 Reflective mask blank, reflective mask, and semiconductor device manufacturing method
JP2021179549A (en) * 2020-05-14 2021-11-18 凸版印刷株式会社 Reflective mask blank and reflective mask
KR20210155863A (en) * 2020-06-16 2021-12-24 삼성전자주식회사 Phase shift mask for extreme ultraviolet lithography and method of forming a semiconductor device using the same
JP2022107355A (en) * 2021-01-08 2022-07-21 株式会社トッパンフォトマスク Reflective photomask blank and reflective photomask
JP2022185356A (en) * 2021-06-02 2022-12-14 株式会社トッパンフォトマスク Reflective photomask blank and reflective photomask

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005121908A (en) * 2003-10-16 2005-05-12 Advanced Display Inc Reflection-type liquid crystal display, semi-transparent liquid crystal display, and method for manufacturing the same
JP4802462B2 (en) * 2004-07-27 2011-10-26 三菱電機株式会社 Method for manufacturing thin film transistor array substrate
JP5194888B2 (en) * 2007-09-27 2013-05-08 凸版印刷株式会社 REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF
JP5332741B2 (en) * 2008-09-25 2013-11-06 凸版印刷株式会社 Reflective photomask
US8962220B2 (en) 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
JP5418293B2 (en) 2010-02-25 2014-02-19 凸版印刷株式会社 Reflective photomask, reflective photomask blank, and method of manufacturing the same
KR101727783B1 (en) * 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Mask for euv lithography, euv lithography system and method for optimising the imaging of a mask

Also Published As

Publication number Publication date
US20200159106A1 (en) 2020-05-21
CN110785703A (en) 2020-02-11
KR20200018476A (en) 2020-02-19
TW201907224A (en) 2019-02-16
US11294270B2 (en) 2022-04-05
EP3650936A4 (en) 2020-09-09
EP3650936A1 (en) 2020-05-13
TWI761546B (en) 2022-04-21
WO2019009211A1 (en) 2019-01-10
JP6888675B2 (en) 2021-06-16
CN110785703B (en) 2023-07-21
JPWO2019009211A1 (en) 2020-04-30

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