JP5194888B2 - REFLECTIVE PHOTOMASK BLANK AND MANUFACTURING METHOD THEREOF, REFLECTIVE PHOTOMASK AND MANUFACTURING METHOD THEREOF - Google Patents

Description

  The present invention relates to a reflective photomask blank and a manufacturing method thereof, a reflective photomask and a manufacturing method thereof, and a semiconductor device manufacturing method. In particular, in a photolithographic method using extreme ultraviolet light in the soft X-ray region, that is, EUV (Extreme Ultra Violet) light, a reflective photomask blank used for manufacturing a semiconductor element, a manufacturing method thereof, a reflective photomask and the same The present invention relates to a manufacturing method and a semiconductor device manufacturing method.

  With the recent high integration in semiconductor devices, the required pattern transfer onto a Si substrate by photolithography has been miniaturized, and conventional lamp light sources (wavelength 365 nm) and excimer laser light sources (wavelengths 248 nm and 193 nm). Since the shortening of the wavelength of the light source in the photolithographic method using) has approached the exposure limit, it is urgently necessary to establish a new photolithographic method that enables microfabrication of 100 nm or less.

For this reason, development of a photolithographic method using F ₂ laser light (wavelength 157 nm), which is an excimer laser light in a shorter wavelength region, is currently under development, but the half-wave size of the normal exposure wavelength is substantially resolved. In this case, the limit is about 70 nm because it is a limit. Therefore, development of a photolithography method using EUV light (wavelength 13 nm) having a wavelength shorter by one digit or more than F ₂ laser light as a light source is desired.

  In the EUV lithography method, exposure by a reflective optical system is used. This is because the refractive index of a substance in the wavelength region of EUV light is slightly smaller than 1, and a refractive optical system as used in a conventional exposure source is used. Because it cannot be used. In addition, although it is a photomask used for pattern transfer at that time, since most substances have high light absorption in the wavelength region of EUV light, a reflection type mask is also used instead of an existing transmission type mask. This is a significant difference from the exposure technique described above.

  This reflective photomask for EUV exposure is provided with a mirror (reflecting mirror) having a high reflectance in the EUV wavelength region on a flat Si substrate or a synthetic quartz substrate, and further has a particularly absorbing property for EUV light. An absorber pattern made of a high heavy metal is formed. A mirror (reflecting mirror) for EUV light is composed of a multilayer film made of a combination of materials having greatly different refractive indexes, and is formed by repeatedly laminating a combination of Mo and Si or Mo and Be for about 40 cycles, and thus a multilayer reflection. The pattern transfer of the absorber is performed by the contrast of the EUV exposure reflectance between the absorption region where the film surface is covered with the absorber pattern and the reflection region where the multilayer reflection film surface without the absorber is exposed.

  At this time, the film thickness of the transfer mask including the multilayer reflective film is further reduced, and it is advantageous to increase the transfer performance (resolution performance, etc.) because the so-called projection effect can be reduced. Become. Here, the multilayer reflective film itself is almost determined by the restriction of the reflectivity with respect to EUV light determined by the periodicity composed of the Mo and Si layers, and therefore the portion of the layer formed above the multilayer reflective film is used to reduce the film thickness. It is necessary to deal with.

  In this regard, among the layers formed above the multilayer reflective film, first, it may be considered to reduce the film thickness including the necessity for the capping layer and the buffer layer. Since it is originally very thin and is not located on the outermost surface of the mask, direct countermeasures are necessary to reduce the projection effect, even if the effect is not completely eliminated. I can't say there is.

On the other hand, reducing the thickness of the absorber layer located on the outermost surface of the mask brings about the effect more directly in improving the influence of the projection effect, and is effective in improving transferability. It is. This is because when the EUV light is exposed to the mask in the transfer, it is a reflective mask, so that light is not incident from the substrate side as in a normal transmission mask, but is incident from the film surface side. . Further, since the absorber layer is a layer having the second largest thickness after the multilayer reflective film due to the structure of the mask, the benefit of reducing the thickness of this layer is great.
JP 2001-237174 A

  The present invention provides a reflective photomask blank in which transfer effect such as resolution is improved and transfer performance such as resolution is improved by performing transfer using a reflective photomask having a reduced absorber layer thickness. A manufacturing method, a reflective photomask, a manufacturing method thereof, and a manufacturing method of a semiconductor device are provided.

The invention according to claim 1 of the present invention includes a substrate and a multilayer reflective film formed on the substrate, wherein the multilayer reflective film buffer layer formed on the absorber layer formed on the buffer layer When, wherein the absorber layer, Ri thin der having a compound material containing tin (Sn) and oxygen (O) tantalum (Ta), the compound material, the tin (Sn) and the oxygen ( O) and when set to 1 ratio containing, it is obtained by a reflection type photomask blank according to claim to Rukoto an alloy containing 0.05 to 0.15 of the tantalum (Ta).

The invention according to claim 2 of the present invention is the reflective photomask blank according to claim 1 , wherein the thickness of the absorber layer is not less than 35 nm and not more than 45 nm.

The invention according to claim 3 of the present invention includes a substrate, a multilayer reflective film, a buffer layer, an absorber layer are successively formed, the absorber layer has a tin (Sn) and oxygen (O) tantalum (Ta) thin der with compound material is, the compound material, when set to 1 ratio including said tin (Sn) and the oxygen (O), in including 0.05 to 0.15 the tantalum (Ta) it is obtained by the manufacturing method of the reflection type photomask blank according to claim to Rukoto and alloys.

The invention according to claim 4 of the present invention is the method for producing a reflective photomask blank according to claim 3 , wherein the thickness of the absorber layer is from 35 nm to 45 nm.

The invention according to claim 5 of the present invention is the method for producing a reflective photomask blank according to claim 4 , wherein the absorber layer is formed by sputtering.

The invention according to claim 6 of the present invention is a reflective photomask characterized in that a pattern is formed on the absorber layer and the buffer layer in the reflective photomask blank according to claim 1 or 2. is there.

The invention according to claim 7 of the present invention includes a substrate, a multilayer reflective film, a buffer layer, an absorber layer are successively formed, the absorber layer has a tin (Sn) and oxygen (O) tantalum (Ta) A thin film including a compound material is formed, and the compound material includes 0.05 to 0.15 of the tantalum (Ta) when the ratio including the tin (Sn) and the oxygen (O) is 1. an alloy, wherein a resist pattern is formed on the absorber layer, wherein forming a pattern in the absorber layer and the buffer layer, and a method of manufacturing a reflective photomask and then exfoliating the resist pattern Is.

The invention according to claim 8 of the present invention is the method of manufacturing a reflective photomask according to claim 7 , wherein the absorber layer is patterned by dry etching.

The invention according to claim 9 of the present invention is the reflective photomask manufacturing method according to claim 7 , wherein the absorber layer is formed by a sputtering method. Is.

Invention, the thickness of the absorber layer, the manufacturing method of the reflection type photomask according to any one of claims 7 to 9, characterized in that at 35nm or more 45nm or less according to Claim 10 of the present invention It is what.

According to an eleventh aspect of the present invention, the reflective photomask according to the sixth aspect is irradiated with extreme ultraviolet light, and the reflected light reflected by the multilayer reflective film of the reflective photomask is provided on the semiconductor substrate. The semiconductor device manufacturing method is characterized by exposing the resist layer for extreme ultraviolet light and transferring the pattern of the absorber layer of the reflective photomask to the resist layer for extreme ultraviolet light.

  According to the present invention, by performing transfer using a reflective photomask having a reduced thickness of the absorber layer, the reflective photomask blank in which the influence of the projection effect is alleviated and transfer performance such as resolution is improved. And a manufacturing method thereof, a reflective photomask, a manufacturing method thereof, and a manufacturing method of a semiconductor element can be provided. Furthermore, according to the present invention, a reflective photomask blank having improved pattern perpendicularity by using a material capable of obtaining a stable resist selectivity when patterning the absorber layer by dry etching, and its manufacture A method, a reflective photomask, a manufacturing method thereof, and a manufacturing method of a semiconductor device can be provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiments, the same components are denoted by the same reference numerals, and redundant description among the embodiments is omitted.

  As shown in FIG. 1, a reflective photomask blank 10 according to an embodiment of the present invention includes a multilayer reflective film 2 on a substrate 1, a buffer layer 3 on the multilayer reflective film 2, and an absorber layer on the buffer layer 3. 4 is sequentially laminated. In this case, the absorber layer 4 can also be configured as a two-layer film in which a low reflection layer for DUV inspection is provided on the outermost surface when low reflection characteristics at the inspection wavelength are required.

  As the substrate 1 according to the embodiment of the present invention, a flat Si substrate, a synthetic quartz substrate, or the like can be used, but the present invention is not limited to these.

  The multilayer reflective film 2 according to the embodiment of the present invention reflects EUV light (extreme ultraviolet light) that is exposure light, and is composed of a multilayer film made of a combination of materials having significantly different refractive indexes with respect to EUV light. . For example, the multilayer reflective film 2 can be formed by repeatedly laminating a combination of Mo (molybdenum) and Si (silicon) or Mo (molybdenum) and Be (beryllium) for about 40 cycles.

  The buffer layer 3 according to the embodiment of the present invention is formed of a material having resistance to dry etching performed when the absorber layer 4 is formed, and a multilayer is formed when the absorber layer pattern 4a is etched. It functions as an etching stopper that prevents damage to the reflective film 2 and can be formed of CrN, Ru, or the like, but is not limited to these in the present invention.

  Although not shown, a protective film can be provided between the multilayer reflective film 2 and the buffer layer 3. The protective film can prevent a decrease in reflectance due to oxidation of the surface of the multilayer reflective film 2. Although not shown, a back conductive film can be formed on the surface of the substrate 1 where the multilayer reflective film 2 is not formed. The back conductive film is a film for fixing the reflective photomask 20 using the principle of an electrostatic chuck when the reflective photomask 20 is installed in an exposure machine.

  The absorber layer 4 according to the embodiment of the present invention absorbs irradiated EUV light when it is dry etched and formed into a predetermined exposure transfer pattern. That is, it can be selected from materials having high absorbability with respect to EUV light (described later).

  Further, although the thickness of the absorber layer 4 is an object of the present invention, it is required to reduce the thickness while retaining a predetermined contrast characteristic with respect to EUV light. That is, since the reflectance of the multilayer reflective film 2 with respect to EUV light is designed to be maximum, conversely, for the absorber layer 4, it is possible to increase the contrast by adopting a film having higher absorbability with respect to EUV light. However, in order to achieve this simultaneously with the thinning of the absorber layer 4, a material that has higher absorption with respect to EUV light than the material of the existing absorber layer 4 is required.

  FIG. 3 shows optical constants at the wavelength of EUV light, with 1-δ (refractive index) on the horizontal axis and β (extinction coefficient) on the vertical axis. In the reflective photomask blank 10 of the present invention, a material based on Sn and an extinction coefficient of 0.073 can be used as a thin film for the absorber layer 4. However, the extinction coefficient of SnO is about 1.8 times larger than the extinction coefficient of Ta as compared with 0.041 of Ta which is the base material of the conventional absorber layer 4.

  Further, FIG. 4 assumes a reflective photomask in which a capping layer (protective film) made of Si and having a thickness of 11 nm is formed on the multilayer reflective film 2, and further an absorber layer 4 (Ta and SnO) is formed thereon. It is the result of the simulation calculated | required about EUV contrast (henceforth "OD". (Optical Density)) in the case of forming.

  From FIG. 4, although the difference in OD between SnO and Ta is smaller in the region where the absorber layer 4 has a thickness of 80 nm or more, SnO clearly secures OD in the thinner region. It can be seen that this is advantageous. Further, in EUV exposure transfer, an OD of at least about 2 is required, but in order to ensure this requirement stably, a film thickness of at least about 82 nm is required for Ta, whereas for SnO, It can be seen that the same EUV light contrast characteristics can be obtained with a film thickness of about 40 nm, which is a little less than half.

  The film thickness of the absorber layer 4 is preferably 35 nm or more and 45 nm or less. If the thickness of the absorber layer 4 is less than 35 nm, EUV light contrast characteristics cannot be obtained. When it is larger than 45 nm, transfer performance such as resolution is deteriorated.

  As described above, when SnO is used for the absorption film, the film thickness is reduced to a little less than half while retaining the desired characteristics as compared with the case where the absorber layer 4 is formed of a conventional Ta-based material. Therefore, transfer performance such as resolution is improved in terms of reducing the projection effect.

  Further, when the absorber layer 4 is formed of a thin film having a compound material containing tantalum (Ta) in addition to tin (Sn) and oxygen (O), the ratio containing tin (Sn) and oxygen (O) In the case of an alloy containing tantalum (Ta) of 0.05 to 0.15, the extinction coefficient is about 0.065 to 0.073, and a significant decrease in the extinction coefficient is recognized. There is almost no effect on the effect obtained in terms of reduction of the projection effect described above. When the ratio of tin (Sn) and oxygen (O) is 1, when the tantalum (Ta) is greater than 0.15, the transfer performance is degraded due to the projection effect.

  On the other hand, when the ratio containing tin (Sn) and oxygen (O) is 1, the resist selectivity in dry etching of the absorber layer 4 made of an alloy containing tantalum (Ta) of 0.05 to 0.15 is 1.2, which is about 1.3 times higher than when the Ta ratio is less than 0.05. When patterning by dry etching is performed using the absorber layer 4 made of an alloy containing 0.05 to 0.15 of tantalum (Ta), where the ratio containing tin (Sn) and oxygen (O) is 1. In addition, a stable resist selectivity can be obtained, and the perpendicularity of the pattern can be improved.

  In the method of manufacturing a semiconductor device using the reflective photomask 20 according to the present invention, the extreme ultraviolet light reflected through the reflective photomask 20 is selectively irradiated.

  Next, the reflected light reflected by the multilayer reflective film 2 of the reflective photomask 20 is exposed to an extreme ultraviolet light resist layer provided on the semiconductor substrate to form a pattern, and then the extreme ultraviolet light resist layer is formed. Patterning can be performed by transferring the pattern of the absorber layer 4 of the reflective photomask 20 to a semiconductor substrate.

  Hereinafter, the reflective photomask blank 10 and the reflective photomask 20 of the present invention will be described by way of examples.

  First, as shown in FIG. 5A, a reflective multilayer film 2 is formed on a substrate 1, a buffer layer 3 is formed on the reflective multilayer film 2, and an absorber layer 4 is formed on the buffer layer 3 in order. A mask blank 10 was produced.

  As the substrate 1, synthetic quartz having an outer shape of 6 inches square and a thickness of 0.635 cm was used which was polished to have a flat surface. The quartz substrate 1 may be one having a CrN (chromium nitride) thin film for electrostatic chuck on the back surface. On the substrate 1, Mo and Si were alternately laminated by about 40 periods by DC magnetron sputtering to produce a reflective multilayer film 2 having a maximum reflectance with respect to EUV light in the wavelength region of 13 nm to 14 nm. At this time, the film thickness of one cycle composed of Mo and Si is 7 nm, of which the film thickness of Mo is 2.8 nm and Si is 4.2 nm, so that the uppermost layer of the reflective multilayer film 2 is Si. Finally, 7 nm of Si was deposited.

Next, a buffer layer 3 made of Ru was formed on the reflective multilayer film 2 with a film thickness of 40 nm, and an SnO film was further formed thereon to produce an absorber layer with a film thickness of 40 nm. . The SnO film was formed by applying 300 W DC power to the Sn target at a gas pressure of 0.25 Pa in an Ar / O ₂ atmosphere. At this time, the surface roughness of the lower absorber layer 4 after film formation was 0.21 nmrms, and the surface had good surface smoothness.

  Next, as shown in FIG. 5B, using a positive electron beam resist, manufactured by Fuji Film Arch, product name “FEP-171”, a resist pattern 5a is formed by a lithography process such as EB (Electron Beam) drawing and development. Formed.

Next, as shown in FIG. 5C, the absorber layer pattern 4a was formed by dry etching the SnO film using the resist pattern 5a as a mask. For this dry etching, an ICP discharge type dry etching apparatus is used, and the bias power is 40 W and the source power is 200 W in an atmosphere having a gas pressure of about 666.61 mPa using a mixed gas of Cl ₂ gas 40 sccm and He gas 65 sccm. went. Further, the selection ratio with respect to the resist in the etching process of the absorber layer 4 was about 0.95.

Further, as shown in FIG. 5C, the buffer layer 3 made of Ru immediately below the absorber layer 4 is dry-etched in a Cl ₂ / O ₂ mixed gas atmosphere to obtain a buffer having good sidewall anisotropy. The pattern of the layer 3 and the absorber layer 4 was obtained.

  Finally, as shown in FIG. 5D, the resist pattern 5a was peeled off to obtain the reflective photomask 20 of the present invention.

  In the reflection type photomask 20 of the present invention, the reflectance of the multilayer reflective film 2 and the absorber layer 4 was determined by measurement using EUV light to be 2.2, which is a conventional Ta-based absorption. Compared with the case where the body layer is applied, the film thickness can be reduced without impairing the contrast characteristics.

  As described above in detail, in the reflective photomask blank 10 and the reflective photomask 20 of the present invention, by adopting a thin film based on Sn, which has higher absorption than the conventional, in the absorber layer 4, The film thickness can be reduced while ensuring the same level of EUV contrast as that of the conventional absorber layer, and transfer performance such as resolution can be improved in terms of reducing the projection effect.

1 is a structural cross-sectional view of a reflective photomask blank according to an embodiment of the present invention. It is a structure sectional view of a reflection type photomask concerning an embodiment of the invention. It is a figure which shows the refractive index and extinction coefficient of various materials with respect to EUV light. It is a figure which shows the result obtained by simulation about the relationship between the film thickness and OD in the SnO film | membrane and Ta film | membrane employ | adopted as an absorber in the reflection type photomask blank which concerns on embodiment of this invention. (A)-(d) is a figure which shows the manufacturing process of the reflective photomask which concerns on embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Reflective multilayer film 3 Buffer layer 4 Absorber layer 3a Buffer layer pattern 4a Absorber layer pattern 5a Resist pattern 10 Reflective photomask blank 20 Reflective photomask

Claims (11)

A substrate,
A multilayer reflective film formed on the substrate;
A buffer layer formed on the multilayer reflective film;
An absorber layer formed on the buffer layer,
The absorber layer, Ri thin der having a compound material containing tin (Sn) and oxygen (O) tantalum (Ta),
The compound material, when set to 1 ratio including said tin (Sn) and the oxygen (O), in the tantalum (Ta), characterized in to Rukoto an alloy containing 0.05 to 0.15 Reflective photomask blank. 2. The reflective photomask blank according to claim 1 , wherein the absorber layer has a thickness of 35 nm to 45 nm. A substrate, a multilayer reflective film, a buffer layer, and an absorber layer are sequentially formed,
The absorber layer, Ri thin der having a compound material containing tin (Sn) and oxygen (O) tantalum (Ta),
The compound material, when set to 1 ratio including said tin (Sn) and the oxygen (O), in the tantalum (Ta), characterized in to Rukoto an alloy containing 0.05 to 0.15 A method for producing a reflective photomask blank. 4. The method of manufacturing a reflective photomask blank according to claim 3 , wherein the absorber layer has a thickness of 35 nm to 45 nm. The said absorber layer is formed into a film using sputtering method, The manufacturing method of the reflection type photomask blank of Claim 4 characterized by the above-mentioned. Reflective photomask, wherein a pattern formed on the absorber layer and the buffer layer in the reflection type photomask blank according to claim 1 or 2. A substrate, a multilayer reflective film, a buffer layer, and an absorber layer are sequentially formed,
The absorber layer forms a thin film having a compound material containing tin (Sn), oxygen (O) and tantalum (Ta) ,
The compound material is an alloy containing 0.05 to 0.15 of the tantalum (Ta) when the ratio containing the tin (Sn) and the oxygen (O) is 1.
Forming a resist pattern on the absorber layer;
Forming a pattern on the absorber layer and the buffer layer;
A method for producing a reflective photomask, comprising peeling off the resist pattern. The method of manufacturing a reflective photomask according to claim 7 , wherein the absorber layer is patterned using dry etching. The method of manufacturing a reflective photomask according to claim 7 or 8 , wherein the absorber layer is formed by a sputtering method. The thickness of the absorber layer, the manufacturing method of the reflection type photomask according to any one of claims 7 to 9, characterized in that at 35nm or more 45nm or less. The reflective photomask according to claim 6 is irradiated with extreme ultraviolet light,
Exposing the reflected light reflected on the multilayer reflective film of the reflective photomask to a resist layer for extreme ultraviolet light provided on a semiconductor substrate,
A method of manufacturing a semiconductor device, comprising transferring a pattern of the absorber layer of the reflective photomask to the resist layer for extreme ultraviolet light.

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