JP5292747B2 - Reflective photomask for extreme ultraviolet - Google Patents

Reflective photomask for extreme ultraviolet Download PDF

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JP5292747B2
JP5292747B2 JP2007239309A JP2007239309A JP5292747B2 JP 5292747 B2 JP5292747 B2 JP 5292747B2 JP 2007239309 A JP2007239309 A JP 2007239309A JP 2007239309 A JP2007239309 A JP 2007239309A JP 5292747 B2 JP5292747 B2 JP 5292747B2
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film
reflective
photomask
substrate
reflective photomask
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JP2009071126A (en
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信平 田村
陽 坂田
正 松尾
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Toppan Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a reflective photomask that eliminates the need to use an expensive rare material by using a Ti oxide, a Zr alloy, a Zr oxide, or a Zr nitride as a material for a surface coating film while reducing effects caused by changes in material properties by oxidization, and a semiconductor device manufacturing method. <P>SOLUTION: The reflective photomask has a substrate, a multilayer reflection film formed on the substrate, a protective film formed on the multilayer reflection film, a buffering film formed on the protective film, an absorbing film formed on the buffering film while having a multilayer structure, and a coating film that covers the whole face, on which an exposure transfer pattern obtained by patterning the buffering film and the absorbing film exists, and at least the side faces of the protective film and the multilayer reflection film. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

本発明は、極端紫外線用反射型フォトマスク及び半導体素子の製造方法に関する。特に、軟Ｘ線領域の極端紫外光、すなわちＥＵＶ（Ｅｘｔｒｅｍｅ Ｕｌｔｒａ Ｖｉｏｌｅｔ）光を使用したフォトリソグラフィ法において、半導体素子の製造などに用いられる反射型フォトマスク及び半導体素子の製造方法に関する。   The present invention relates to a reflection photomask for extreme ultraviolet light and a method for manufacturing a semiconductor element. In particular, the present invention relates to a reflective photomask used for manufacturing a semiconductor element and the like and a method for manufacturing the semiconductor element in a photolithography method using extreme ultraviolet light in the soft X-ray region, that is, EUV (Extreme Ultra Violet) light.

従来、半導体素子製造において、フォトリソグラフィ法によってＳｉ基板上へ必要なパターン転写をする際には、光源として、ランプ光源（波長３６５ｎｍ）やエキシマレーザ光源（ＫｒＦ：波長２４８ｎｍ、ＡｒＦ：波長１９３ｎｍ）が使用されてきた。さらにその次世代技術として、ＡｒＦエキシマレーザを用いた液浸露光技術が使用されている。しかしながら、ＡｒＦエキシマレーザを用いた液浸露光をもってしても、将来的に求められる３２ｎｍ以下の線幅を有するデバイスを作製することは容易ではない。また、ＡｒＦエキシマレーザを用いる液浸露光を３２ｎｍ以下の線幅を有するデバイス作製用のリソグラフィ技術として適用するには露光装置やレジストの課題もある。このため、エキシマレーザ光より１桁以上も短い波長を有するＥＵＶ光（波長約１３ｎｍ）を光源とするフォトリソグラフィ法の開発が望まれている。   Conventionally, in semiconductor device manufacturing, when a necessary pattern is transferred onto a Si substrate by photolithography, a lamp light source (wavelength 365 nm) or an excimer laser light source (KrF: wavelength 248 nm, ArF: wavelength 193 nm) is used as a light source. Have been used. Further, as the next generation technology, immersion exposure technology using an ArF excimer laser is used. However, even with immersion exposure using an ArF excimer laser, it is not easy to produce a device having a line width of 32 nm or less that will be required in the future. In addition, there is a problem of an exposure apparatus and a resist to apply immersion exposure using an ArF excimer laser as a lithography technique for manufacturing a device having a line width of 32 nm or less. For this reason, development of a photolithography method using EUV light (wavelength of about 13 nm) having a wavelength shorter by one digit or more than excimer laser light as a light source is desired.

ＥＵＶ光を使用したＥＵＶリソグラフィ法では、反射光学系による露光が用いられる。これはＥＵＶ光の波長領域における物質の屈折率が１よりわずかに小さい程度であり、従来の露光源で用いられるような屈折光学系が使用できないことによる。また、従来パターン転写には透過型フォトマスクが使用されているが、ＥＵＶ光の波長域では、ほとんどの物質が高い光吸収性を持つため、反射型フォトマスクが使用されている。   In the EUV lithography method using EUV light, exposure by a reflective optical system is used. This is because the refractive index of the substance in the wavelength region of EUV light is slightly smaller than 1, and a refracting optical system used in a conventional exposure source cannot be used. In addition, a transmissive photomask is used for conventional pattern transfer, but a reflective photomask is used because most substances have high light absorption in the wavelength region of EUV light.

このようなＥＵＶリソグラフィ法における反射型フォトマスクとしては、基板上に、ＥＵＶ光を反射可能な多層反射膜と、多層反射膜上に形成されてＥＵＶ光の吸収率の高い材質の吸収膜とにより構成された反射型フォトマスクブランクを使用したものが提案されている。より詳しくは、多層反射膜は、ＥＵＶ光の波長に対する屈折率が互いに大きく異なった２種類以上の材料層を周期的に積層させた構造となっている。また、吸収膜は、Ｔａを主成分とした合金や酸化物、窒化物、若しくは酸窒化物の積層構造となっている。そして、この吸収膜を所定のパターンでエッチングすることで、ＥＵＶ光が所定のパターンで多層反射膜に反射して、Ｓｉ基板上へのパターン転写を可能とさせている。   As a reflection type photomask in such an EUV lithography method, a multilayer reflection film capable of reflecting EUV light on a substrate and an absorption film made of a material having a high EUV light absorption rate formed on the multilayer reflection film are used. The thing using the comprised reflection type photomask blank is proposed. More specifically, the multilayer reflective film has a structure in which two or more kinds of material layers whose refractive indexes with respect to the wavelength of EUV light are significantly different from each other are periodically stacked. The absorption film has a laminated structure of an alloy, oxide, nitride, or oxynitride containing Ta as a main component. Then, by etching the absorption film with a predetermined pattern, the EUV light is reflected on the multilayer reflective film with the predetermined pattern, and the pattern can be transferred onto the Si substrate.

また、繰り返し使用することによるマスク最表面の材料の酸化を防止したり、洗浄によるダメージを抑えるためにマスク表面を保護するための被覆膜をＥＵＶ光の吸収の少ない材料で形成したりする場合もある（例えば、特許文献１参照）。   In addition, when the material on the outermost surface of the mask is prevented from being repeatedly used due to repeated use, or a coating film for protecting the mask surface is formed of a material that absorbs less EUV light in order to suppress damage due to cleaning. (For example, refer to Patent Document 1).

しかしながら、特許文献１の反射型フォトマスクブランクで用いられているマスク表面の被覆膜の材料はＲｕ（ルテニウム）を中心としているがＲｕは希少材料で値段も高く、また、酸化による性質変化の影響も解明されていない。さらに、基板外周側面が被覆されていないため側面の損傷などを起因としたマスク劣化やパーティクルが発生してしまう。
特開２００３−３１８１０４号公報 However, the material of the coating film on the mask surface used in the reflective photomask blank of Patent Document 1 is centered on Ru (ruthenium), but Ru is a rare material and expensive, and changes in properties due to oxidation. The impact has not been elucidated. Furthermore, since the outer peripheral side surface of the substrate is not covered, mask deterioration and particles are generated due to side surface damage and the like.
JP 2003-318104 A

本発明は、表面被覆膜の材料として、Ｔｉの酸化物やＺｒ合金やＺｒの酸化物、窒化物を用いることによって高価格な希少材料を使用することなく、なおかつ酸化による材料の性質変化の影響を軽減することができる反射型フォトマスク及び半導体素子の製造方法を提供する。   The present invention uses a Ti oxide, a Zr alloy, a Zr oxide, or a nitride as the material of the surface coating film, and does not use a high-priced rare material. Provided are a reflective photomask and a method for manufacturing a semiconductor device, which can reduce the influence.

本発明の請求項１に係る発明は、基板と、基板上に形成された多層反射膜と、多層反射膜上に形成された保護膜と、保護膜上に形成された緩衝膜と、緩衝膜上に形成された多層構造を有する吸収膜と、を有し、緩衝膜は、吸収膜をエッチングにてパターニングする際に、保護膜へのダメージを防ぐエッチングストッパーとして機能し、保護膜は、緩衝膜をエッチングして除去する際に、多層反射膜へのダメージを防ぐエッチングストッパーとして機能するものであり、さらに、緩衝膜と吸収膜をパターニングして得られた露光転写パターンが存在する面の全面及び少なくとも保護膜及び多層反射膜の側面を被覆する被覆膜を有する反射型フォトマスクであって、被覆膜は、ＺｒＳｉの合金またはＴｉをターゲットとしてＡｒガスにＯ ２ ガスを混ぜたガス雰囲気にて、ＺｒＳｉターゲットまたはＴｉターゲットと反射型フォトマスクが正面からずれた位置関係になるように設置して、反射型フォトマスクを回転させながらスパッタリング成膜することにより、反射型フォトマスクのマスクパターン面および反射型フォトマスクのマスク側面全体に形成される、厚さ２〜２．２ｎｍのＺｒＳｉまたはＴｉの酸化物であることを特徴とする反射型フォトマスクとしたものである。 The invention according to claim 1 of the present invention includes a substrate, a multilayer reflective film formed on the substrate, a protective film formed on the multilayer reflective film, a buffer film formed on the protective film, and a buffer film An absorption film having a multilayer structure formed thereon, and the buffer film functions as an etching stopper for preventing damage to the protective film when the absorption film is patterned by etching. It functions as an etching stopper to prevent damage to the multilayer reflective film when the film is removed by etching, and further, the entire surface on which the exposure transfer pattern obtained by patterning the buffer film and the absorption film exists and a reflection type photomask which have a coating film covering at least the side surface of the protective film and the multilayer reflective film, the coating film, the O 2 gas to the Ar gas an alloy or Ti of ZrSi targeting In a mixed gas atmosphere, the ZrSi target or Ti target and the reflective photomask are placed in a positional relationship shifted from the front, and the reflective photomask is sputtered while rotating the reflective photomask. The reflective photomask is an oxide of ZrSi or Ti having a thickness of 2 to 2.2 nm formed on the mask pattern surface of the mask and the entire mask side surface of the reflective photomask .

本発明の請求項２に係る発明は、基板の多層反射膜が形成されていない面に裏面導電膜が形成されていることを特徴とする請求項１に記載の反射型フォトマスクとしたものである。 Invention is formed by a reflection type photomask according to claim 1, characterized in that back-surface conductive film is formed on the surface the multilayer reflective film of the substrate is not formed according to the second aspect of the present invention is there.

本発明によれば、表面被覆膜の材料として、Ｔｉの酸化物やＺｒ合金や酸化物、窒化物を用いることによって高価格な希少材料を使用することなく、なおかつ酸化による材料の性質変化の影響を軽減することができる反射型フォトマスク及び半導体素子の製造方法を提供することができる。   According to the present invention, the use of Ti oxides, Zr alloys, oxides, and nitrides as the material of the surface coating film makes it possible to use high-priced rare materials without changing the properties of the materials due to oxidation. It is possible to provide a reflective photomask and a method for manufacturing a semiconductor element that can reduce the influence.

以下、本発明の実施の形態を、図面を参照しつつ、説明する。実施の形態において、同一構成要素には同一符号を付け、実施の形態の間において重複する説明は省略する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiments, the same components are denoted by the same reference numerals, and redundant description among the embodiments is omitted.

図１及び図２に示すように、本発明の実施の形態に係る反射型フォトマスク１０及び２０は、基板１と、基板１上に形成された多層反射膜２と、多層反射膜２上に形成された保護膜３と、保護膜３上に形成された緩衝膜から形成された緩衝膜パターン４と、緩衝膜パターン４上に形成された吸収膜下層パターン５aと、吸収膜下層パターン５aの上層に吸収膜上層パターン５ｂを備えている。さらに形成したマスクパターン面全体を保護するための被覆膜７及び被覆膜８を有している。   As shown in FIGS. 1 and 2, the reflective photomasks 10 and 20 according to the embodiment of the present invention are provided on a substrate 1, a multilayer reflective film 2 formed on the substrate 1, and a multilayer reflective film 2. The formed protective film 3, the buffer film pattern 4 formed from the buffer film formed on the protective film 3, the absorption film lower layer pattern 5a formed on the buffer film pattern 4, and the absorption film lower layer pattern 5a The upper layer is provided with an absorption film upper layer pattern 5b. Furthermore, it has a coating film 7 and a coating film 8 for protecting the entire formed mask pattern surface.

本発明の実施の形態に係る基板１はＳｉ基板や、低熱膨張ガラス基板などが挙げられるが本発明ではこれらに限定されるわけではない。   Examples of the substrate 1 according to the embodiment of the present invention include a Si substrate and a low thermal expansion glass substrate, but the present invention is not limited to these.

本発明の実施の形態に係る多層反射膜２は、露光光であるＥＵＶ光（極端紫外光）を反射するもので、ＥＵＶ光に対する屈折率の大きく異なる材料の組み合わせによる多層膜から構成されている。例えば、多層反射膜２としては、Ｍｏ（モリブデン）とＳｉ（シリコン）、またはＭｏ（モリブデン）とＢｅ（ベリリウム）といった組み合わせの層を４０周期程度繰り返し積層することにより形成することができる。   The multilayer reflective film 2 according to the embodiment of the present invention reflects EUV light (extreme ultraviolet light) that is exposure light, and is composed of a multilayer film made of a combination of materials having significantly different refractive indexes with respect to EUV light. . For example, the multilayer reflective film 2 can be formed by repeatedly laminating a combination of Mo (molybdenum) and Si (silicon) or Mo (molybdenum) and Be (beryllium) for about 40 cycles.

本発明の実施の形態に係る吸収膜下層パターン５aは、後述するようにドライエッチングされて所定の露光転写パターンに形成された際に、照射されたＥＵＶ光を吸収するものであり、すなわち、ＥＵＶ光に対する高吸収性を有する重金属から選択される。このような重金属としては、Ｔａ（タンタル）を主成分とした合金を好ましく用いることができるが本発明ではこれらに限定されるわけではない。   The absorption film lower layer pattern 5a according to the embodiment of the present invention absorbs irradiated EUV light when it is formed into a predetermined exposure transfer pattern by dry etching as will be described later, that is, EUV. It is selected from heavy metals having a high absorption for light. As such a heavy metal, an alloy containing Ta (tantalum) as a main component can be preferably used, but the present invention is not limited thereto.

また、このような吸収膜下層パターン５aの結晶状態としては、平滑性の高い吸収体層表面を得るため、あるいはドライエッチングによる吸収膜の異方性エッチングを行うため、アモルファスの方が良い。例えば、Ｔａの場合にはＳｉを適量含んだ合金（以下、「ＴａＳｉ系吸収体」と表記する。）とすることでアモルファス化が行える。   Further, the crystalline state of the absorber film lower layer pattern 5a is preferably amorphous because an absorber layer surface having high smoothness is obtained or anisotropic etching of the absorber film is performed by dry etching. For example, in the case of Ta, amorphization can be performed by using an alloy containing an appropriate amount of Si (hereinafter referred to as “TaSi-based absorber”).

本発明の実施の形態に係る緩衝膜４は、吸収膜下層パターン５ａと吸収膜上層パターン５ｂとの形成の際に行われるドライエッチングに対して耐性を有する材質で形成されて、吸収膜下層パターン５ａをエッチングする際に、保護膜３へのダメージを防ぐエッチングストッパーとして機能するもので、ＣｒＮ等で形成することができるが本発明ではこれらに限定されるわけではない。   The buffer film 4 according to the embodiment of the present invention is formed of a material having resistance to dry etching performed when forming the absorption film lower layer pattern 5a and the absorption film upper layer pattern 5b. It functions as an etching stopper for preventing damage to the protective film 3 when etching 5a, and can be formed of CrN or the like, but the present invention is not limited thereto.

本発明の実施の形態に係る裏面導電膜１００は、反射型フォトマスク１０及び反射型フォトマスク２０を露光機に設置するときに静電チャックの原理を利用して固定するための膜である。   The back surface conductive film 100 according to the embodiment of the present invention is a film for fixing the reflection type photomask 10 and the reflection type photomask 20 using the principle of an electrostatic chuck when the reflection type photomask 10 and the reflection type photomask 20 are installed in an exposure machine.

本発明の実施の形態に係る保護膜３は、多層反射膜２を保護するためのものであり、緩衝膜をエッチングして除去する際に、多層反射膜２へのダメージを防ぐエッチングストッパーとして機能するものである。保護膜３は、Ｓｉ及びＲｕ（ルテニウム）等で形成することができるが本発明ではこれらに限定されるわけではない。   The protective film 3 according to the embodiment of the present invention is for protecting the multilayer reflective film 2 and functions as an etching stopper for preventing damage to the multilayer reflective film 2 when the buffer film is removed by etching. To do. The protective film 3 can be formed of Si, Ru (ruthenium) or the like, but is not limited to these in the present invention.

本発明の実施の形態に係る吸収膜下層パターン５ａ及び吸収膜上層パターン５ｂは、電子線レジストを吸収膜上層の上にコーティングして電子線描画を行うことによりレジストパターンを形成し、このレジストパターンをドライエッチングすることにより吸収膜にレジストパターンを転写する。ドライエッチングの際にはＦ系ガスまたはＣｌ２系ガスを主体としたエッチング雰囲気中で行われる。そして、残ったレジストを除去して検査及び修正を行った後に、緩衝膜をエッチングする。緩衝膜パターン４を形成する際には、例えばＣｒ系緩衝膜の場合はＣｌ２ガスにＯ２を添加したエッチング雰囲気にて行うことができる。 The absorption film lower layer pattern 5a and the absorption film upper layer pattern 5b according to the embodiment of the present invention form a resist pattern by coating an electron beam resist on the absorption film upper layer and performing electron beam drawing. The resist pattern is transferred to the absorption film by dry etching. The dry etching is performed in an etching atmosphere mainly composed of F-based gas or Cl 2 -based gas. Then, after the remaining resist is removed for inspection and correction, the buffer film is etched. The buffer film pattern 4 can be formed, for example, in an etching atmosphere in which O 2 is added to Cl 2 gas in the case of a Cr-based buffer film.

さらに、マスク洗浄を行った後に例えばＺｒＳｉをターゲットとしてＡｒにＯ２を添加した雰囲気でスパッタリングし、被覆膜７及び被覆膜８を形成することができる。 Further, after performing mask cleaning, for example, sputtering can be performed in an atmosphere in which O 2 is added to Ar using ZrSi as a target to form the coating film 7 and the coating film 8.

図３に示す反射型フォトマスク３０に被覆膜７をマスクパターン面及び保護膜３及び多層反射膜２の側面に形成するためには、例えばＺｒＳｉをターゲットとしてＡｒにＯ２を添加した雰囲気で形成したマスクを回転させながらスパッタリングすることで被覆膜７が形成される。スパッタリングする際には、反射型フォトマスク３０の正面にターゲットを配置することで、被覆膜７を反射型フォトマスク３０のマスクパターン面と多層反射膜２を含む側面に形成することができる。 In order to form the coating film 7 on the reflection pattern photomask 30 shown in FIG. 3 on the mask pattern surface and the side surfaces of the protective film 3 and the multilayer reflection film 2, for example, in an atmosphere in which O 2 is added to Ar using ZrSi as a target. The coating film 7 is formed by sputtering while rotating the formed mask. When sputtering, the target film is disposed on the front surface of the reflective photomask 30 so that the coating film 7 can be formed on the side surface including the mask pattern surface of the reflective photomask 30 and the multilayer reflective film 2.

図３に示す反射型フォトマスク３０に被覆膜８をマスクパターン面及び基板１側面に形成するためには、例えばＺｒＳｉをターゲットとしてＡｒにＯ２を添加した雰囲気で形成した反射型フォトマスク３０を回転させながらスパッタリングすることで被覆膜８が形成できる。スパッタリングする際には、反射型フォトマスク３０が正面からずれた位置関係にターゲットを配置することで、被覆膜８を反射型フォトマスク３０のマスクパターン面とマスク側面全体に形成することができる。 In order to form the coating film 8 on the mask pattern surface and the side surface of the substrate 1 on the reflective photomask 30 shown in FIG. 3, for example, the reflective photomask 30 formed in an atmosphere in which O 2 is added to Ar using ZrSi as a target. The coating film 8 can be formed by sputtering while rotating. When sputtering, the coating film 8 can be formed on the mask pattern surface and the entire mask side surface of the reflective photomask 30 by disposing the target in a positional relationship where the reflective photomask 30 is displaced from the front. .

その後必要に応じて洗浄を行うことによって反射型フォトマスク１０若しくは反射型フォトマスク２０を作製することができる。   Thereafter, the reflective photomask 10 or the reflective photomask 20 can be manufactured by performing cleaning as necessary.

被覆膜７及び被覆膜８の材料としてＴｉの酸化物やＺｒ合金や酸化物、窒化物を用いてマスクパターン全面、保護膜及び多層反射膜の側面、基板の側面に被覆膜７及び被覆膜８を形成することにより酸化による材料の性質変化の影響を軽減することができ、側面の損傷等を起因としたマスクの劣化及びパーティクルの発生を防止できる。   The coating film 7 and the coating film 8 are made of Ti oxide, Zr alloy, oxide, or nitride as the material of the mask pattern, the protective film and the side of the multilayer reflective film, and the side of the substrate. By forming the coating film 8, it is possible to reduce the influence of the property change of the material due to oxidation, and it is possible to prevent the deterioration of the mask and the generation of particles due to the damage of the side surface.

本発明による反射型フォトマスク１０及び２０を用いた半導体素子の製造方法は、反射型フォトマスク１０及び２０を介して反射した極端紫外光を選択的に照射する。   The semiconductor device manufacturing method using the reflective photomasks 10 and 20 according to the present invention selectively irradiates the extreme ultraviolet light reflected through the reflective photomasks 10 and 20.

次に、反射型フォトマスク１０及び２０の多層反射膜２に反射した反射光を半導体基板上に設けられたレジスト層に露光し、パターンを形成させたのち、レジスト層に反射型フォトマスク１０及び２０の吸収体層のパターンを半導体基板に転写することでパターニングすることができる。   Next, the reflected light reflected by the multilayer reflective film 2 of the reflective photomasks 10 and 20 is exposed to a resist layer provided on the semiconductor substrate to form a pattern, and then the reflective photomask 10 and It can pattern by transferring the pattern of 20 absorber layers to a semiconductor substrate.

以下、実施例に基づいて、本発明の実施形態に係る反射型フォトマスク１０及び２０の製造の詳細については図３を用いて説明するが本発明はこの実施例に限定されるものではない。   Hereinafter, the details of the production of the reflective photomasks 10 and 20 according to the embodiment of the present invention will be described with reference to FIG. 3, but the present invention is not limited to this example.

図３に示すように、基板１として低熱膨張ガラスを用いて、基板１上にＭｏとＳｉからなる１周期の膜厚は７ｎｍであり、そのうちＭｏの膜厚は２．８ｎｍ、Ｓｉの膜厚は４．２ｎｍを交互に４０周期積層して、ＥＵＶ光を反射するための多層反射膜２を成膜し、多層反射膜２上にＳｉからなる保護膜３を成膜し、保護膜３上にＣｒの窒化物からなる緩衝膜パターン４を成膜し、緩衝膜パターン４上にＴａを主成分とした合金の吸収膜下層パターン５ａを形成し、吸収膜下層パターン５ａ上に吸収膜上層パターン５ｂを形成し、基板１裏面にはＣｒＮからなる裏面導電膜１００が成膜してある反射型フォトマスク３０を得ることができる。   As shown in FIG. 3, using a low thermal expansion glass as the substrate 1, the film thickness of one cycle made of Mo and Si on the substrate 1 is 7 nm, of which the film thickness of Mo is 2.8 nm and the film thickness of Si. Is formed by laminating 4.2 nm alternately for 40 periods to form a multilayer reflective film 2 for reflecting EUV light, and forming a protective film 3 made of Si on the multilayer reflective film 2. A buffer film pattern 4 made of Cr nitride is formed on the film, an absorption film lower layer pattern 5a of an alloy mainly composed of Ta is formed on the buffer film pattern 4, and an absorption film upper layer pattern is formed on the absorption film lower layer pattern 5a. 5b, and a reflective photomask 30 in which a back conductive film 100 made of CrN is formed on the back surface of the substrate 1 can be obtained.

反射型フォトマスク３０に対して、ＺｒＳｉの合金をターゲットとしてＡｒガスにＯ２ガスを混ぜたガス雰囲気にてマスクを回転させながらスパッタリング成膜した。この際、ＺｒＳｉターゲットが反射型フォトマスク３０の正面に来るように設置することによってＺｒＳｉの酸化物の被覆膜７を２ｎｍの厚さで形成することができた。以上より反射型フォトマスク１０を得た。 A sputtering film was formed on the reflective photomask 30 while rotating the mask in a gas atmosphere in which O 2 gas was mixed with Ar gas using a ZrSi alloy as a target. In this case, the ZrSi oxide coating film 7 having a thickness of 2 nm could be formed by placing the ZrSi target so as to be in front of the reflective photomask 30. Thus, the reflective photomask 10 was obtained.

以上のような反射型フォトマスク１０によれば、マスク表面の被覆膜７によって反射型フォトマスク１０は吸収膜上層パターン５ｂ、吸収膜下層パターン５ｂ及び保護膜３の酸化や薬液による膜質劣化を防止することができる。表面被覆膜７によるＥＵＶ光の反射率低下も０．２％程度であり、反射型フォトマスク１０を用いて半導体素子を製造する際にも安定したパターン転写をすることができる。   According to the reflection type photomask 10 as described above, the reflection type photomask 10 causes the film quality deterioration due to oxidation of the absorption film upper layer pattern 5b, the absorption film lower layer pattern 5b, and the protection film 3 due to the coating film 7 on the mask surface or due to the chemical solution. Can be prevented. The EUV light reflectivity drop by the surface coating film 7 is about 0.2%, and stable pattern transfer can be performed even when a semiconductor element is manufactured using the reflective photomask 10.

図３に示すように、基板１として低熱膨張ガラスを用いて、基板１上にＭｏとＳｉからなる１周期の膜厚は７ｎｍであり、そのうちＭｏの膜厚は２．８ｎｍ、Ｓｉの膜厚は４．２ｎｍを交互に４０周期積層して、ＥＵＶ光を反射するための多層反射膜２を成膜し、その上にＳｉからなる保護膜３を成膜し、保護膜３上にＣｒの窒化物からなる緩衝膜パターン４を成膜し、多層反射膜２上にＴａを主成分とした合金の吸収膜下層パターン５ａを形成し、吸収膜下層パターン５ａ上に吸収膜上層パターン５ｂを形成し、基板１裏面にはＣｒＮからなる裏面導電膜１００が成膜してある反射型フォトマスク３０を得ることができる。   As shown in FIG. 3, using a low thermal expansion glass as the substrate 1, the film thickness of one cycle made of Mo and Si on the substrate 1 is 7 nm, of which the film thickness of Mo is 2.8 nm and the film thickness of Si. Is formed by alternately laminating 4.2 nm for 40 periods, forming a multilayer reflective film 2 for reflecting EUV light, forming a protective film 3 made of Si thereon, and forming Cr on the protective film 3 A buffer film pattern 4 made of nitride is formed, an absorption film lower layer pattern 5a of an alloy mainly composed of Ta is formed on the multilayer reflective film 2, and an absorption film upper layer pattern 5b is formed on the absorption film lower layer pattern 5a. In addition, a reflective photomask 30 in which a back conductive film 100 made of CrN is formed on the back surface of the substrate 1 can be obtained.

反射型フォトマスク３０に対して、ＺｒＳｉの合金をターゲットとしてＡｒガスにＯ２ガスを混ぜたガス雰囲気にてマスクを回転させながらスパッタリング成膜した。この際、ＺｒＳｉターゲットと反射型フォトマスク３０が正面からずれた位置関係になるように設置することによってＺｒＳｉの酸化物の被覆膜８を２ｎｍの厚さで形成することができた。以上より反射型フォトマスク２０を得た。 A sputtering film was formed on the reflective photomask 30 while rotating the mask in a gas atmosphere in which O 2 gas was mixed with Ar gas using a ZrSi alloy as a target. At this time, the ZrSi target and the reflective photomask 30 were placed so as to have a positional relationship shifted from the front, whereby the ZrSi oxide coating film 8 could be formed with a thickness of 2 nm. Thus, a reflective photomask 20 was obtained.

以上のような反射型フォトマスク２０によれば、マスク表面の被覆膜８によって反射型フォトマスク２０は吸収膜上層パターン５ｂ、吸収膜下層パターン５ａ及び保護膜３の酸化や薬液による膜質劣化を防止することができる。表面被覆膜８によりＥＵＶ光の反射率低下も０．２％程度であり、反射型フォトマスク１０を用いて半導体素子を製造する際にも安定したパターン転写をすることができる。   According to the reflection type photomask 20 as described above, the reflection type photomask 20 causes the film quality deterioration due to the oxidation of the absorption film upper layer pattern 5b, the absorption film lower layer pattern 5a and the protection film 3 due to the coating film 8 on the mask surface or the chemical solution. Can be prevented. The surface coating film 8 also reduces the EUV light reflectance by about 0.2%, and stable pattern transfer can be performed even when a semiconductor element is manufactured using the reflective photomask 10.

図３に示すように、基板１として低熱膨張ガラスを用いて、基板１上にＭｏとＳｉからなる１周期の膜厚は７ｎｍであり、そのうちＭｏの膜厚は２．８ｎｍ、Ｓｉの膜厚は４．２ｎｍを交互に４０周期積層して、ＥＵＶ光を反射するための多層反射膜２を成膜し、多層反射膜２上にＲｕからなる保護膜３を成膜し、保護膜３上にＣｒの窒化物からなる緩衝膜パターン４を成膜し、緩衝膜パターン４上にＴａを主成分とした合金の吸収膜下層パターン５ａを形成し、吸収膜下層パターン５ａ上に吸収膜上層パターン５ｂを形成し、基板１裏面にはＣｒＮからなる裏面導電膜１００が成膜してある反射型フォトマスク３０を得ることができる。   As shown in FIG. 3, using a low thermal expansion glass as the substrate 1, the film thickness of one cycle made of Mo and Si on the substrate 1 is 7 nm, of which the film thickness of Mo is 2.8 nm and the film thickness of Si. Is formed by laminating 4.2 nm alternately for 40 periods to form a multilayer reflective film 2 for reflecting EUV light, and forming a protective film 3 made of Ru on the multilayer reflective film 2. A buffer film pattern 4 made of Cr nitride is formed on the film, an absorption film lower layer pattern 5a of an alloy mainly composed of Ta is formed on the buffer film pattern 4, and an absorption film upper layer pattern is formed on the absorption film lower layer pattern 5a. 5b, and a reflective photomask 30 in which a back conductive film 100 made of CrN is formed on the back surface of the substrate 1 can be obtained.

反射型フォトマスク３０に対して、ＴｉをターゲットとしてＡｒガスにＯ２ガスを混ぜたガス雰囲気にてマスクを回転させながらスパッタ成膜した。この際、Ｔｉターゲットが反射型フォトマスクの正面に来るように設置することによってＴｉの酸化物の被覆膜７を２．２ｎｍの厚さで形成した。以上より反射型フォトマスク１０を得た。 Sputter film formation was performed on the reflective photomask 30 while rotating the mask in a gas atmosphere in which O 2 gas was mixed with Ar gas using Ti as a target. At this time, the Ti oxide coating film 7 was formed to a thickness of 2.2 nm by placing the Ti target so as to be in front of the reflective photomask. Thus, the reflective photomask 10 was obtained.

以上のような反射型フォトマスク１０によれば、マスク表面の被覆膜７によって反射型フォトマスク１０は吸収膜上層パターン５、吸収膜下層パターン５及び保護膜３の酸化や薬液による膜質劣化を防止することができる。表面被覆膜７によるＥＵＶ光の反射率低下も０．３％程度であり、反射型フォトマスク２０を用いて半導体素子を製造する際にも安定したパターン転写をすることができる。   According to the reflection type photomask 10 as described above, the reflection type photomask 10 causes deterioration of the film quality due to oxidation of the absorption film upper layer pattern 5, absorption film lower layer pattern 5 and protective film 3 due to the coating film 7 on the mask surface or chemical solution. Can be prevented. The EUV light reflectivity drop by the surface coating film 7 is about 0.3%, and stable pattern transfer can be performed even when a semiconductor element is manufactured using the reflective photomask 20.

図３に示すように、基板１として低熱膨張ガラスを用いて、基板１上にＭｏとＳｉからなる１周期の膜厚は７ｎｍであり、そのうちＭｏの膜厚は２．８ｎｍ、Ｓｉの膜厚は４．２ｎｍを交互に４０周期積層して、ＥＵＶ光を反射するための多層反射膜２を成膜し、多層反射膜２上にＲｕからなる保護膜３を成膜し、保護膜３上にＣｒの窒化物からなる緩衝膜パターン４を成膜し、緩衝膜パターン４上にＴａを主成分とした合金の吸収膜下層パターン５ａを形成し、吸収膜下層パターン５ａ上に吸収膜上層パターン５ｂを形成し、基板１裏面にはＣｒＮからなる裏面導電膜１００が成膜してある反射型フォトマスク３０を得ることができる。   As shown in FIG. 3, using a low thermal expansion glass as the substrate 1, the film thickness of one cycle made of Mo and Si on the substrate 1 is 7 nm, of which the film thickness of Mo is 2.8 nm and the film thickness of Si. Is formed by laminating 4.2 nm alternately for 40 periods to form a multilayer reflective film 2 for reflecting EUV light, and forming a protective film 3 made of Ru on the multilayer reflective film 2. A buffer film pattern 4 made of Cr nitride is formed on the film, an absorption film lower layer pattern 5a of an alloy mainly composed of Ta is formed on the buffer film pattern 4, and an absorption film upper layer pattern is formed on the absorption film lower layer pattern 5a. 5b, and a reflective photomask 30 in which a back conductive film 100 made of CrN is formed on the back surface of the substrate 1 can be obtained.

反射型フォトマスク３０に対して、ＴｉをターゲットとしてＡｒガスにＯ２ガスを混ぜたガス雰囲気にてマスクを回転させながらスパッタ成膜した。この際、Ｔｉターゲットと反射型フォトマスク３０が正面からずれた位置関係になるように設置することによってＴｉの酸化物の被覆膜８を２．２ｎｍの厚さで形成した。以上より反射型フォトマスク２０を得た。 Sputter film formation was performed on the reflective photomask 30 while rotating the mask in a gas atmosphere in which O 2 gas was mixed with Ar gas using Ti as a target. At this time, the Ti oxide coating film 8 was formed to a thickness of 2.2 nm by placing the Ti target and the reflective photomask 30 so as to have a positional relationship shifted from the front. Thus, a reflective photomask 20 was obtained.

以上のような反射型フォトマスク２０によれば、マスク表面の被覆膜８によって反射型フォトマスク２０は吸収膜上層パターン５ｂ、吸収膜下層パターン５ａ及び保護膜３の酸化や薬液による膜質劣化を防止することができる。表面被覆膜８によるＥＵＶ光の反射率低下も０．３％程度であり、反射型フォトマスク２０を用いて半導体素子を製造する際にも安定したパターン転写をすることができる。   According to the reflection type photomask 20 as described above, the reflection type photomask 20 causes the film quality deterioration due to the oxidation of the absorption film upper layer pattern 5b, the absorption film lower layer pattern 5a and the protection film 3 due to the coating film 8 on the mask surface or the chemical solution. Can be prevented. The EUV light reflectivity drop by the surface coating film 8 is about 0.3%, and stable pattern transfer can be performed even when a semiconductor element is manufactured using the reflective photomask 20.

本発明に係る反射型フォトマスク１０及び２０によれば、表面被覆膜７及び８の材料として、Ｔｉの酸化物やＺｒ合金や酸化物、窒化物を用いることによって半導体素子、半導体装置及び電子回路装置等の製造工程で、極端紫外光用レジストを用いて微細なパターンを形成するために好適に用いることができる。   According to the reflective photomasks 10 and 20 according to the present invention, by using Ti oxide, Zr alloy, oxide, or nitride as the material of the surface coating films 7 and 8, a semiconductor element, a semiconductor device, and an electron It can be suitably used for forming a fine pattern using a resist for extreme ultraviolet light in a manufacturing process of a circuit device or the like.

以上、本発明の実施形態について図面を参照して詳述したが、具体的な構成はこの実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。   As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

本発明の実施形態に係るパターン面全体と側面の多層膜上とを被覆膜で覆った反射型フォトマスクの概略断面図である。It is a schematic sectional drawing of the reflection type photomask which covered the whole pattern surface and the multilayer film of the side surface concerning the embodiment of this invention with the coating film. 本発明の実施形態に係るパターン面全体と側面全体を被覆膜で覆った反射型フォトマスクの概略断面図である。It is a schematic sectional drawing of the reflective photomask which covered the whole pattern surface and the whole side surface which concern on embodiment of this invention with the coating film. 本発明の実施形態に係る反射型フォトマスクの概略断面図である。It is a schematic sectional drawing of the reflection type photomask which concerns on embodiment of this invention.

符号の説明Explanation of symbols

１ 基板
２ 多層反射膜
３ 保護膜
４ 緩衝膜パターン
５ａ 吸収膜下層パターン
５ｂ 吸収膜上層パターン
７ パターン面に対する表面の被覆膜
８ マスク全体に対する表面の被覆膜
１０ マスクパターン面及び多層反射膜を含むマスク側壁にまで被覆膜をつけた反射型フォトマスク
２０ マスクパターン面及びマスク側壁全体に被覆膜をつけた反射型フォトマスク
３０ 反射型フォトマスク
１００ 裏面導電膜 DESCRIPTION OF SYMBOLS 1 Substrate 2 Multi-layer reflective film 3 Protective film 4 Buffer film pattern 5a Absorbing film lower layer pattern 5b Absorbing film upper layer pattern 7 Surface coating film 8 on the pattern surface 8 Surface coating film 10 on the entire mask Mask pattern surface and multilayer reflective film Reflective photomask 20 having a coating film on the mask side wall including the reflective photomask 30 having a coating film on the mask pattern surface and the entire mask side wall Reflective photomask 100 Back surface conductive film

Claims (2)

基板と、
前記基板上に形成された多層反射膜と、
前記多層反射膜上に形成された保護膜と、
前記保護膜上に形成された緩衝膜と、
前記緩衝膜上に形成された多層構造を有する吸収膜と、
を有し、
前記緩衝膜は、吸収膜をエッチングにてパターニングする際に、保護膜へのダメージを防ぐエッチングストッパーとして機能し、
前記保護膜は、緩衝膜をエッチングして除去する際に、多層反射膜へのダメージを防ぐエッチングストッパーとして機能するものであり、
さらに、前記緩衝膜と前記吸収膜をパターニングして得られた露光転写パターンが存在する面の全面及び少なくとも前記保護膜及び前記多層反射膜の側面を被覆する被覆膜を有する反射型フォトマスクであって、
前記被覆膜は、ＺｒＳｉの合金またはＴｉをターゲットとしてＡｒガスにＯ ２ ガスを混ぜたガス雰囲気にて、ＺｒＳｉターゲットまたはＴｉターゲットと反射型フォトマスクが正面からずれた位置関係になるように設置して、前記反射型フォトマスクを回転させながらスパッタリング成膜することにより、前記反射型フォトマスクのマスクパターン面および前記反射型フォトマスクのマスク側面全体に形成される、厚さ２〜２．２ｎｍのＺｒＳｉまたはＴｉの酸化物であることを特徴とする反射型フォトマスク。 A substrate,
A multilayer reflective film formed on the substrate;
A protective film formed on the multilayer reflective film;
A buffer film formed on the protective film;
An absorption film having a multilayer structure formed on the buffer film;
Have
The buffer film functions as an etching stopper for preventing damage to the protective film when the absorption film is patterned by etching,
The protective film functions as an etching stopper that prevents damage to the multilayer reflective film when the buffer film is etched away.
Furthermore, the reflection type photomask have a coating film covering the side surface of the entire surface of the buffer layer and the absorbing layer patterned to the resulting exposure transfer pattern exists and at least the protective film and the multilayer reflective film Because
The coating film is installed so that the ZrSi target or Ti target and the reflective photomask are displaced from the front in a gas atmosphere in which O 2 gas is mixed with Ar gas using a ZrSi alloy or Ti as a target. Then, by performing sputtering film formation while rotating the reflective photomask, the thickness of 2 to 2.2 nm formed on the mask pattern surface of the reflective photomask and the entire mask side surface of the reflective photomask. A reflective photomask characterized by being an oxide of ZrSi or Ti . 前記基板の前記多層反射膜が形成されていない面に裏面導電膜が形成されていることを
特徴とする請求項１に記載の反射型フォトマスク。 2. The reflective photomask according to claim 1, wherein a back conductive film is formed on a surface of the substrate where the multilayer reflective film is not formed.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5239762B2 (en) * 2008-11-13 2013-07-17 大日本印刷株式会社 Reflective mask and reflective mask manufacturing method
KR102110845B1 (en) * 2012-07-31 2020-05-14 호야 가부시키가이샤 Reflective mask blank and method for manufacturing same, method for manufacturing reflective mask, and method for manufacturing semiconductor device
JP2014045075A (en) * 2012-08-27 2014-03-13 Asahi Glass Co Ltd Reflective mask blank for euv lithography and reflective mask for euv lithography
US9335206B2 (en) * 2012-08-30 2016-05-10 Kla-Tencor Corporation Wave front aberration metrology of optics of EUV mask inspection system
JP2014090132A (en) * 2012-10-31 2014-05-15 Toppan Printing Co Ltd Reflective mask and manufacturing method thereof
JP5240396B2 (en) * 2012-11-16 2013-07-17 大日本印刷株式会社 Reflective mask and reflective mask manufacturing method
JP6287099B2 (en) * 2013-05-31 2018-03-07 旭硝子株式会社 Reflective mask blank for EUV lithography
DE102016226202A1 (en) * 2016-12-23 2018-06-28 Carl Zeiss Smt Gmbh Optical element, in particular for a microlithographic projection exposure apparatus
US11086215B2 (en) * 2017-11-15 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced mask shadowing effect and method of manufacturing the same
US20230032950A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2883400B2 (en) * 1990-04-27 1999-04-19 三洋電機株式会社 X-ray mask manufacturing method
JP3463406B2 (en) * 1995-04-24 2003-11-05 株式会社ニコン X-ray reflection type mask
JP2003133205A (en) * 2001-10-24 2003-05-09 Oki Electric Ind Co Ltd Reflex mask, method of manufacturing the same, and method of cleaning the same
JP2003243292A (en) * 2002-02-18 2003-08-29 Nikon Corp Reflecting mask, aligner, and cleaning method therefor
JP4158960B2 (en) * 2002-02-25 2008-10-01 Ｈｏｙａ株式会社 Reflective mask blank for exposure and reflective mask for exposure
JP3939167B2 (en) * 2002-02-28 2007-07-04 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK FOR EXPOSURE, ITS MANUFACTURING METHOD, AND REFLECTIVE MASK FOR EXPOSURE
KR100455383B1 (en) * 2002-04-18 2004-11-06 삼성전자주식회사 Reflection photomask, method of fabricating reflection photomask and method of fabricating integrated circuit using the same
JP4553239B2 (en) * 2004-06-29 2010-09-29 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
DE102004038548A1 (en) * 2004-08-06 2006-03-16 Schott Ag Mask blank manufacturing method for photolithography processing, involves designing handling portion so that multilayered layer on front surface of substrate is exposed in each handling portion and pressed by mechanical clamp
JP2006173490A (en) * 2004-12-17 2006-06-29 Nikon Corp Optical element and projection aligner using the same
JP2006173446A (en) * 2004-12-17 2006-06-29 Nikon Corp Optical element for extreme ultraviolet ray, and projection aligner using the same
JP2006324268A (en) * 2005-05-17 2006-11-30 Dainippon Printing Co Ltd Mask blanks for euv exposure, its manufacturing method and mask for euv exposure
JP5178996B2 (en) * 2005-06-23 2013-04-10 凸版印刷株式会社 Reflective photomask blank, reflective photomask, and pattern transfer method using the same
JP4826742B2 (en) * 2006-01-05 2011-11-30 旭硝子株式会社 Thin film device deposition method
JP4900656B2 (en) * 2006-01-31 2012-03-21 凸版印刷株式会社 Reflective mask blank, reflective photomask, and reflective photomask manufacturing method
JP2009070860A (en) * 2007-09-11 2009-04-02 Toppan Printing Co Ltd Blank for reflective photomask and manufacturing method thereof, and reflective photomask and manufacturing method thereof

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