JP4910820B2 - Extreme ultraviolet exposure mask, extreme ultraviolet exposure mask blank, method for manufacturing extreme ultraviolet exposure mask, and lithography method - Google Patents
Extreme ultraviolet exposure mask, extreme ultraviolet exposure mask blank, method for manufacturing extreme ultraviolet exposure mask, and lithography method Download PDFInfo
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本発明は、極端紫外線露光用マスク、極端紫外線露光用マスクブランク、極端紫外線露光用マスクの製造方法及びリソグラフィ方法に関する。より詳細には、半導体製造プロセス中の、波長１０〜１５ｎｍ程度のいわゆる極端紫外線（Ｅｘｔｒｅｍｅ Ｕｌｔｒａ Ｖｉｏｌｅｔ、以下ＥＵＶと略記）を用いたフォトリソグラフィ工程で使用される、極端紫外線露光用マスク（以下、ＥＵＶマスク）、及びそのマスクを作製するためのマスクブランクに関するものである。 The present invention relates to an extreme ultraviolet exposure mask, an extreme ultraviolet exposure mask blank, a method for manufacturing an extreme ultraviolet exposure mask, and a lithography method. More specifically, an extreme ultraviolet exposure mask (hereinafter referred to as EUV) used in a photolithography process using a so-called extreme ultraviolet (hereinafter referred to as EUV) having a wavelength of about 10 to 15 nm during a semiconductor manufacturing process. Mask) and a mask blank for manufacturing the mask.
半導体集積回路の微細化は年々進んでおり、それに伴いフォトリソグラフィ技術に使用される光もその短波長化が進んでいる。近況としては、これまで光源として使用されてきたＫｒＦエキシマレーザー（波長２４８ｎｍ）からＡｒＦエキシマレーザー（波長１９３ｎｍ）に移行しつつある。また、ＡｒＦエキシマレーザーを使用する液浸露光法の研究が近年活発に行われており、５０ｎｍ以下の線幅を目標とする動きもある。 The miniaturization of semiconductor integrated circuits is progressing year by year, and accordingly, the light used in photolithography technology is also being shortened. In recent times, the KrF excimer laser (wavelength 248 nm), which has been used as a light source, has been shifted to an ArF excimer laser (wavelength 193 nm). In recent years, an immersion exposure method using an ArF excimer laser has been actively researched, and there is a movement aiming at a line width of 50 nm or less.
ＡｒＦエキシマレーザーを使用する液浸露光法もその研究が進んでいるとはいえ、その実現可能性は不鮮明である。このような背景から、エキシマレーザーよりも波長が一桁以上短い（１０〜１５ｎｍ）ＥＵＶ光を用いた、ＥＵＶリソグラフィの研究開発が進められている。 Although the immersion exposure method using an ArF excimer laser has been studied, its feasibility is unclear. Against this background, research and development of EUV lithography using EUV light whose wavelength is one or more orders of magnitude shorter (10 to 15 nm) than that of excimer lasers is in progress.
ＥＵＶ露光では、上述のように波長が短いため、物質の屈折率がほとんど真空の値に近く、材料間の光吸収の差も小さい。このため、ＥＵＶ波長領域では従来の透過型の屈折光学系が作れず、反射光学系となり、マスクも反射型マスクとなる。これまで開発されてきた一般的なＥＵＶマスクは、Ｓｉウェハーやガラス基板上に、例えばＭｏとＳｉからなる２層膜を４０対ほど積層した多層膜、および多層膜を保護するキャッピング膜を高反射領域とし、その上に低反射領域として吸収膜および緩衝膜のパターンを形成した構造であった。緩衝膜は、吸収膜のパターニングや欠陥修正の際に、キャッピング膜や多層膜へのダメージを軽減する役割を果たす。 In EUV exposure, since the wavelength is short as described above, the refractive index of a substance is almost close to the value of vacuum, and the difference in light absorption between materials is also small. For this reason, in the EUV wavelength region, a conventional transmissive refractive optical system cannot be formed, and a reflective optical system is formed, and the mask is also a reflective mask. Conventional EUV masks that have been developed so far are highly reflective of a multilayer film in which about 40 pairs of two-layer films made of, for example, Mo and Si are laminated on a Si wafer or glass substrate, and a capping film that protects the multilayer film. In this structure, an absorption film and a buffer film pattern are formed as a low reflection region on the region. The buffer film plays a role of reducing damage to the capping film and the multilayer film during patterning of the absorption film and defect correction.
以上のようなＥＵＶマスクにおいて、低反射領域を形成するために主要な機能を有するのは、ＥＵＶ光を吸収する吸収膜である。吸収膜部は、通常、パターン欠陥検査時のコントラストを確保するために、欠陥検査光である遠紫外線（Ｄｅｅｐ Ｕｌｔｒａ Ｖｉｏｌｅｔ、以下ＤＵＶと略記）光に対して、低反射率となるよう設計される。低反射率とするための方法は、いわゆる薄膜干渉を利用した反射防止（Ａｎｔｉ Ｒｅｆｌｅｃｔｉｏｎ、以下ＡＲと略記）効果を使うことであり、従って、吸収膜の上層にはＤＵＶ光に対して透明性の膜がＡＲ膜として形成される。 In the EUV mask as described above, an absorption film that absorbs EUV light has a main function for forming a low reflection region. The absorption film portion is usually designed to have a low reflectance with respect to deep ultraviolet (DUV) light, which is defect inspection light, in order to ensure contrast during pattern defect inspection. . A method for reducing the reflectivity is to use an anti-reflection effect (hereinafter referred to as AR) using so-called thin film interference. Therefore, the upper layer of the absorption film is transparent to DUV light. The film is formed as an AR film.
一方、ＥＵＶ光に対する低反射領域を形成するためにＥＵＶ光を吸収するという、主要な機能を有するのは、吸収膜の中でも上層吸収膜（ＡＲ膜）を除いた下層吸収膜の部分である。下層吸収膜は付加機能を持たせるために、２層以上の積層構造からなる場合もあるが、本発明の目的と本質的な関係はないので、以下、下層吸収膜は単層として論じ、吸収膜の主要部分を構成する膜であるので、以下、単に吸収膜と記載する。 On the other hand, it is the lower absorption film portion excluding the upper absorption film (AR film) that has the main function of absorbing EUV light in order to form a low reflection region for EUV light. In order to provide an additional function, the lower layer absorption film may have a laminated structure of two or more layers, but since there is no essential relationship with the object of the present invention, the lower layer absorption film will be discussed below as a single layer and absorbed. Since it is a film constituting the main part of the film, it is simply referred to as an absorption film hereinafter.
ＥＵＶ露光は反射露光であるために、入射光は垂直ではなく、やや斜め（通常６°程度）方向から入射し、ＥＵＶマスクで反射光となる。ＥＵＶマスクにおいて、パターンとして加工されるのは吸収膜と緩衝膜の部分であるが、斜めからＥＵＶ光が入射するために、パターンの影が生じる。従って、入射方向とパターンの配置方向によっては、反射光で形成する、ウェハー上の転写レジストパターンに、本来のパターン位置からのずれが生じる。これを射影効果（Ｓｈａｄｏｗｉｎｇ Ｅｆｆｅｃｔ）と呼び、ＥＵＶ露光の課題となっている。射影効果を低減するには、影の長さを小さくすることであり、そのためにはパターンの高さをなるべく低くすればよい。パターンを形成しているのは、吸収膜と緩衝膜であるが、通常緩衝膜は薄く、吸収膜のパターニングや欠陥修正の際のキャッピング膜や多層膜へのダメージの軽減という必要特性から選択されるので、パターンの高さを低くするには、吸収膜をなるべく薄くする必要がある。薄くしても十分な吸収機能を有する吸収膜とするためには、もともとＥＵＶ光の吸収機能の大きい吸収膜を開発する必要がある。 Since EUV exposure is reflection exposure, incident light is not vertical, but is incident from a slightly oblique direction (usually about 6 °) and becomes reflected light by an EUV mask. In the EUV mask, it is the portions of the absorption film and the buffer film that are processed as a pattern, but since the EUV light is incident obliquely, a shadow of the pattern is generated. Accordingly, depending on the incident direction and the arrangement direction of the pattern, a deviation from the original pattern position occurs in the transfer resist pattern formed by reflected light on the wafer. This is called a projecting effect and is a subject of EUV exposure. In order to reduce the projection effect, it is necessary to reduce the length of the shadow. For this purpose, the height of the pattern should be as low as possible. The pattern is formed by the absorption film and the buffer film, but the buffer film is usually thin and is selected based on the necessary characteristics of patterning the absorption film and reducing damage to the capping film and multilayer film during defect correction. Therefore, in order to reduce the height of the pattern, it is necessary to make the absorption film as thin as possible. In order to obtain an absorption film having a sufficient absorption function even if it is thinned, it is necessary to develop an absorption film having a large EUV light absorption function.
本発明は、かかる課題に対する対策を提供するものであり、ＥＵＶ露光における射影効果を低減するために、大きな吸収機能を持ち、併せて優れた微細なパターニング性を持つよう、吸収膜材料が規定されたＥＵＶ露光用マスク、及びそれを作製するためのブランクを提供することにある。さらに、このような露光用マスクの好適な製造方法及びこの露光用マスクを用いたリソグラフィ方法を提供することにある。 The present invention provides a countermeasure against such a problem, and in order to reduce the projection effect in EUV exposure, an absorption film material is defined so as to have a large absorption function and an excellent fine patterning property. Another object of the present invention is to provide an EUV exposure mask and a blank for producing the same. Furthermore, it is providing the suitable manufacturing method of such an exposure mask, and the lithography method using this exposure mask.
本願発明は係る課題に鑑みなされたもので、その一実施形態においては、極端紫外線を反射する多層膜と、多層膜の上にパターン状に形成された立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜とを有することを特徴とする極端紫外線露光用マスクが提供される。 SUMMARY OF THE INVENTION The present invention has been made in view of such problems, and in one embodiment thereof, a tantalum nitride film comprising a multilayer film that reflects extreme ultraviolet rays and a cubic crystal structure formed in a pattern on the multilayer film. And an extreme ultraviolet exposure mask characterized by comprising an absorption film that absorbs extreme ultraviolet rays.
この極端紫外線露光用マスクにおいて、さらに、多層膜上に形成された多層膜を保護するキャッピング膜と、キャッピング膜と吸収膜との間に形成された緩衝膜とを有することが望ましい。 The extreme ultraviolet exposure mask preferably further includes a capping film for protecting the multilayer film formed on the multilayer film, and a buffer film formed between the capping film and the absorption film.
本願発明の他の実施形態においては、極端紫外線を反射する多層膜と、多層膜の上に形成された立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜とを有することを特徴とする極端紫外線露光用マスクブランクが提供される。 In another embodiment of the present invention, it has a multilayer film that reflects extreme ultraviolet rays, and an absorption film that consists of a tantalum nitride film having a cubic crystal structure formed on the multilayer film and absorbs extreme ultraviolet rays. A mask blank for extreme ultraviolet exposure is provided.
この極端紫外線露光用マスクブランクにおいても、さらに、多層膜上に形成された多層膜を保護するキャッピング膜と、キャッピング膜と吸収膜との間に形成された緩衝膜とを有することが望ましい。 This extreme ultraviolet exposure mask blank also desirably has a capping film for protecting the multilayer film formed on the multilayer film and a buffer film formed between the capping film and the absorption film.
本願発明の他の実施形態においては、基板上に極端紫外線を反射する多層膜を形成し、多層膜の上に極端紫外線を吸収する吸収膜として、立方晶系の結晶構造からなる窒化タンタル膜を形成し、吸収膜上にレジストパターンを形成し、レジストパターンをマスクとして吸収膜をエッチングすることによりマスクパターンを形成することを特徴とする極端紫外線露光用マスクの製造方法が提供される。 In another embodiment of the present invention, a multilayer film that reflects extreme ultraviolet rays is formed on a substrate, and a tantalum nitride film having a cubic crystal structure is used as an absorption film that absorbs extreme ultraviolet rays on the multilayer film. There is provided an extreme ultraviolet exposure mask manufacturing method characterized in that a mask pattern is formed by forming, forming a resist pattern on an absorption film, and etching the absorption film using the resist pattern as a mask.
この極端紫外線露光用マスクの製造方法においても、さらに、多層膜上に形成された多層膜を保護するキャッピング膜と、キャッピング膜と吸収膜との間に形成された緩衝膜とが形成されることが望ましい。 In this extreme ultraviolet exposure mask manufacturing method, a capping film for protecting the multilayer film formed on the multilayer film and a buffer film formed between the capping film and the absorption film are further formed. Is desirable.
本願発明の他の実施形態においては、極端紫外線を反射する多層膜と、多層膜の上にパターン状に形成された立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜とを有する露光用マスクに極端紫外線を斜めに照射し、露光用マスクからの反射光をレジストの形成された露光対象基板上に照射することを特徴とするリソグラフィ方法が提供される。 In another embodiment of the present invention, an absorption film comprising a multilayer film reflecting extreme ultraviolet light and a tantalum nitride film having a cubic crystal structure formed in a pattern on the multilayer film and absorbing extreme ultraviolet light The lithography method is characterized in that extreme ultraviolet rays are obliquely irradiated to an exposure mask having the above and the exposure target substrate on which a resist is formed is irradiated with reflected light from the exposure mask.
本発明の極端紫外線露光用マスクは、上述のような構成をしており、吸収膜が比較的大きなＥＵＶ光の吸収性能をもつ立方晶系の結晶構造からなる窒化タンタルを含有するので、従来よりも吸収膜を薄膜化することが出来、転写パターンの位置ずれの原因となる射影効果を低減することができる。 The extreme ultraviolet exposure mask of the present invention has the above-described configuration, and the absorption film contains tantalum nitride having a cubic crystal structure having a relatively large EUV light absorption performance. In addition, the absorption film can be made thin, and the projection effect that causes the displacement of the transfer pattern can be reduced.
本発明の極端紫外線露光用マスクブランクは、その吸収膜をパターニングすることにより、上述の効果を有する極端紫外線露光用マスクを作成できるという効果を有する。 The extreme ultraviolet exposure mask blank of the present invention has an effect that an extreme ultraviolet exposure mask having the above-described effects can be created by patterning the absorption film.
本発明のリソグラフィ方法は、比較的大きなＥＵＶ光の吸収性能をもつ立方晶系の結晶構造からなる窒化タンタルを吸収膜として用いるので、転写パターンの位置ずれの原因となる射影効果を低減することができる。 Since the lithographic method of the present invention uses tantalum nitride having a cubic crystal structure having a relatively large EUV light absorption capability as an absorption film, it is possible to reduce the projection effect that causes the displacement of the transfer pattern. it can.
以下本発明を実施するための形態について説明する。本発明のＥＵＶ露光用マスク及びマスクブランクは、吸収膜の主要部分を構成する主たる元素がタンタルと窒素である。ＥＵＶ露光用マスクに限らず、一般にフォトマスク用薄膜の成膜は、付着力の確保等の観点から、スパッタリング法による成膜が行われる。 Hereinafter, modes for carrying out the present invention will be described. In the EUV exposure mask and mask blank of the present invention, the main elements constituting the main part of the absorption film are tantalum and nitrogen. In general, not only the EUV exposure mask but also the photomask thin film is formed by sputtering from the viewpoint of securing adhesion.
さらに、金属窒化物のスパッタリング成膜においては、金属窒化物のターゲットを用いる方法もあるが、窒化物になったターゲットの導電性の低下や密度の低下によりスパッタリング時に異常放電を発生しやすいため、金属窒化物ターゲットではなく、単体金属のターゲットを用い、窒素は、スパッタリングガスであるＡｒやＸｅなどの不活性ガスに窒素を混入することで導入する方法が一般的である。 Furthermore, in sputtering of metal nitride, there is a method using a metal nitride target, but abnormal discharge tends to occur during sputtering due to a decrease in conductivity and density of the target that has become a nitride. In general, a single metal target is used instead of a metal nitride target, and nitrogen is introduced by mixing nitrogen into an inert gas such as Ar or Xe as a sputtering gas.
ところが、金属ターゲットを使い、不活性ガスに窒素を混入してスパッタリングで作製した膜は一般に非晶質（アモルファス）の膜になり易く、密度が上がらず、その結果としてＥＵＶ光の吸収機能が上がりにくいという欠点がある。基板加熱等を行いつつ成膜すれば、結晶性になりやすいが、ＥＵＶマスクは、ＥＵＶ光の高反射部となる多層膜を有しているため、基板加熱をおこなうと、多層膜界面に拡散が起こり、ＥＵＶ光反射率が低下してしまうことになる。従って、吸収膜の成膜時に基板加熱を行うことはできない。 However, a film prepared by sputtering using a metal target and nitrogen mixed in an inert gas generally tends to be an amorphous film, and the density does not increase. As a result, the function of absorbing EUV light increases. There is a drawback that it is difficult. Crystallization is likely to occur if the film is formed while heating the substrate, but the EUV mask has a multilayer film that becomes a highly reflective part of the EUV light. Therefore, if the substrate is heated, it diffuses into the multilayer film interface. Will occur, and the EUV light reflectance will decrease. Therefore, the substrate cannot be heated when forming the absorption film.
また、結晶化が進んだ膜は、一般に結晶粒（グレイン）の粒径が大きくなり、柱状構造になりやすく、吸収膜のエッチングにより、微細で線幅精度の高いパターンを形成するうえで不利になる。 In addition, a crystallized film generally has a large crystal grain size and is likely to have a columnar structure, which is disadvantageous in forming a fine pattern with high linewidth accuracy by etching an absorption film. Become.
以上のことから、本発明のＥＵＶマスクにおいては、タンタルターゲットを用い、不活性ガスに窒素を混入したスパッタリングにより、タンタルと窒素を主成分とする吸収膜の作製を行うが、その際に、装置構成や、圧力、電力等の制御により、立方晶系の結晶構造からなる窒化タンタルを適量含有するような吸収膜を形成する。好ましくは、立方晶系窒化タンタルの含有量は、吸収膜全体の密度が１４．０〜１５．５ｇ／ｃｍ３の範囲にある程度とする。 From the above, in the EUV mask of the present invention, a tantalum target is used, and an absorption film containing tantalum and nitrogen as main components is produced by sputtering in which nitrogen is mixed in an inert gas. An absorption film containing an appropriate amount of tantalum nitride having a cubic crystal structure is formed by controlling the configuration, pressure, power, and the like. Preferably, the content of cubic tantalum nitride has a density of the whole absorbing film is to some extent the range of 14.0~15.5g / cm 3.
窒化タンタル結晶の安定形態については、立方晶系のＴａＮ、およびＴａＮ１．１３の他、六方晶系のＴａＮ、さらにはＴａ２Ｎが知られている。これらの膜の密度は
立方晶系ＴａＮ：１５．８４２ｇ／ｃｍ３
立方晶系ＴａＮ１．１３：１６．２５６ｇ／ｃｍ３
六方晶系ＴａＮ：１４．３０６ｇ／ｃｍ３
六方晶系Ｔａ２Ｎ：１５．８２４ｇ／ｃｍ３
である。なお、単体金属であるＴａの密度は１６．７ｇ／ｃｍ３である。
Regarding the stable form of the tantalum nitride crystal, cubic TaN and TaN 1.13 , hexagonal TaN, and Ta 2 N are known. The density of these films is cubic TaN: 15.842 g / cm 3
Cubic TaN 1.13 : 16.256 g / cm 3
Hexagonal TaN: 14.306 g / cm 3
Hexagonal Ta 2 N: 15.824 g / cm 3
It is. The density of Ta, which is a single metal, is 16.7 g / cm 3 .
図１に本発明の一実施形態にかかる極端紫外線露光用マスクの構成を示す。下地としての基板１上に、例えばシリコン層とモリブデン層とを積層形成してなる、極端紫外線を反射する多層膜２と、多層膜上２に形成された多層膜２を保護するキャッピング膜３と、キャッピング膜３上にパターン状に形成された緩衝膜４及び立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜５と、この吸収膜５上に形成された反射防止膜（ＡＲ膜）６とを有する。本発明の一実施形態にかかる極端紫外線露光用マスクブランクは、図１と同様ではあるが、緩衝膜４、吸収膜５及び反射防止膜６がパターニングされる前の状態である。この極端紫外線露光用マスクには、斜めから入射ＥＵＶ光７が照射され、マスクパターン以外の部分では反射率Ｒｍで反射ＥＵＶ光８が、マスクパターンの部分では反射率Ｒａ（反射率Ｒｍより小さい）で反射ＥＵＶ光９が出射される。この反射ＥＵＶ光８は、レジストの形成された露光対象基板上に照射される。 FIG. 1 shows the configuration of an extreme ultraviolet exposure mask according to an embodiment of the present invention. For example, a multilayer film 2 that reflects extreme ultraviolet rays and a capping film 3 that protects the multilayer film 2 formed on the multilayer film 2 are formed by laminating, for example, a silicon layer and a molybdenum layer on a substrate 1 as a base. A buffer film 4 formed in a pattern on the capping film 3 and a tantalum nitride film having a cubic crystal structure and absorbing an extreme ultraviolet ray; and an antireflection film formed on the absorption film 5. And a film (AR film) 6. The extreme ultraviolet exposure mask blank according to one embodiment of the present invention is the same as that shown in FIG. 1, but is in a state before the buffer film 4, the absorption film 5 and the antireflection film 6 are patterned. The extreme ultraviolet exposure mask is irradiated with incident EUV light 7 from an oblique direction, and the portion other than the mask pattern has a reflectance Rm and the reflected EUV light 8 and the portion of the mask pattern has a reflectance Ra (smaller than the reflectance Rm). The reflected EUV light 9 is emitted. The reflected EUV light 8 is irradiated onto an exposure target substrate on which a resist is formed.
図２に図１と対応させたところの従来の極端紫外線露光用マスクの構成を示す。同一部位には同一の参照符号を付している。吸収膜５ａはアモルファス窒化タンタルから構成されているため、本発明の極端紫外線露光用マスクの吸収膜５よりも厚く形成せざるを得ない。 FIG. 2 shows the configuration of a conventional extreme ultraviolet exposure mask corresponding to FIG. The same reference numerals are assigned to the same parts. Since the absorption film 5a is made of amorphous tantalum nitride, it must be formed thicker than the absorption film 5 of the extreme ultraviolet exposure mask of the present invention.
１・・・・基板
２・・・・多層膜
３・・・・キャッピング膜
４・・・・緩衝膜
５・・・・吸収膜（立方晶系の窒化タンタルを含む吸収膜）
５ａ・・・吸収膜（アモルファス窒化タンタルからなる吸収膜）
６・・・・ＡＲ膜
７・・・・入射ＥＵＶ光
８・・・・反射ＥＵＶ光（反射率Ｒｍ）
９・・・・反射ＥＵＶ光（反射率Ｒａ）
DESCRIPTION OF SYMBOLS 1 ... substrate 2 ... multilayer film 3 ... capping film 4 ... buffer film 5 ... absorption film (absorption film containing cubic tantalum nitride)
5a ... absorption film (absorption film made of amorphous tantalum nitride)
6 ... AR film 7 ... Incident EUV light 8 ... Reflected EUV light (reflectance Rm)
9 ... Reflected EUV light (Reflectance Ra)
Claims (7)
前記多層膜の上にパターン状に形成された立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜と
を有することを特徴とする極端紫外線露光用マスク。 A multilayer film that reflects extreme ultraviolet radiation;
A mask for extreme ultraviolet exposure, comprising an absorption film made of a tantalum nitride film having a cubic crystal structure formed in a pattern on the multilayer film and absorbing extreme ultraviolet radiation.
前記多層膜上に形成された前記多層膜を保護するキャッピング膜と、
前記キャッピング膜と前記吸収膜との間に形成された緩衝膜と
を有することを特徴とする極端紫外線露光用マスク。 The extreme ultraviolet exposure mask according to claim 1, further comprising:
A capping film for protecting the multilayer film formed on the multilayer film;
An extreme ultraviolet exposure mask comprising a buffer film formed between the capping film and the absorption film.
前記多層膜の上に形成された立方晶系の結晶構造からなる窒化タンタル膜からなり極端紫外線を吸収する吸収膜と
を有することを特徴とする極端紫外線露光用マスクブランク。 A multilayer film that reflects extreme ultraviolet radiation;
A mask blank for extreme ultraviolet exposure, comprising an absorption film made of a tantalum nitride film having a cubic crystal structure formed on the multilayer film and absorbing extreme ultraviolet radiation.
前記多層膜上に形成された前記多層膜を保護するキャッピング膜と、
前記キャッピング膜と前記吸収膜との間に形成された緩衝膜と
を有することを特徴とする極端紫外線露光用マスクブランク。 The extreme ultraviolet exposure mask blank according to claim 3, further comprising:
A capping film for protecting the multilayer film formed on the multilayer film;
A mask blank for extreme ultraviolet exposure, comprising a buffer film formed between the capping film and the absorption film.
前記多層膜の上に極端紫外線を吸収する吸収膜として、立方晶系の結晶構造からなる窒化タンタル膜を形成し、
前記吸収膜上にレジストパターンを形成し、
前記レジストパターンをマスクとして前記吸収膜をエッチングすることによりマスクパターンを形成すること
を特徴とする極端紫外線露光用マスクの製造方法。 A multilayer film that reflects extreme ultraviolet rays is formed on the substrate,
Forming a tantalum nitride film having a cubic crystal structure as an absorption film for absorbing extreme ultraviolet rays on the multilayer film,
Forming a resist pattern on the absorption film;
A method of manufacturing an extreme ultraviolet exposure mask, comprising: forming a mask pattern by etching the absorption film using the resist pattern as a mask.
前記多層膜上に前記多層膜を保護するキャッピング膜を形成し、
前記キャッピング膜上に、前記吸収膜を形成する前に緩衝膜を形成する
ことを特徴とする極端紫外線露光用マスクの製造方法。 In the manufacturing method of the extreme ultraviolet exposure mask according to claim 5,
Forming a capping film for protecting the multilayer film on the multilayer film;
A method for manufacturing an extreme ultraviolet exposure mask, comprising: forming a buffer film on the capping film before forming the absorption film.
Extreme UV light is applied to an exposure mask having a multilayer film that reflects extreme ultraviolet light, and an absorption film that is formed of a tantalum nitride film having a cubic crystal structure formed in a pattern on the multilayer film and that absorbs extreme ultraviolet light. Is irradiated obliquely, and the light reflected from the exposure mask is irradiated onto the exposure target substrate on which the resist is formed.
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| KR20110122928A (en) | 2010-05-06 | 2011-11-14 | 삼성전자주식회사 | Reflective extreme ultraviolet mask and method of manufacturing the same |
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| JP3391699B2 (en) * | 1998-05-07 | 2003-03-31 | 日本電信電話株式会社 | X-ray mask manufacturing method |
| JP4397496B2 (en) * | 2000-02-25 | 2010-01-13 | Ｏｋｉセミコンダクタ株式会社 | Reflective exposure mask and EUV exposure apparatus |
| JP3963078B2 (en) * | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | Tertiary amylimidotris (dimethylamido) tantalum, method for producing the same, raw material solution for MOCVD using the same, and method for forming a tantalum nitride film using the same |
| JP3989367B2 (en) * | 2002-02-22 | 2007-10-10 | Ｈｏｙａ株式会社 | REFLECTIVE MASK BLANK FOR EXPOSURE, ITS MANUFACTURING METHOD, AND REFLECTIVE MASK FOR EXPOSURE |
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