SG10202002368YA - Phase shift mask blank and phase shift mask - Google Patents
Phase shift mask blank and phase shift maskInfo
- Publication number
- SG10202002368YA SG10202002368YA SG10202002368YA SG10202002368YA SG10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA SG 10202002368Y A SG10202002368Y A SG 10202002368YA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- blank
- mask blank
- phase
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019067065 | 2019-03-29 | ||
| JP2019111026 | 2019-06-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202002368YA true SG10202002368YA (en) | 2020-10-29 |
Family
ID=69845266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202002368YA SG10202002368YA (en) | 2019-03-29 | 2020-03-16 | Phase shift mask blank and phase shift mask |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11307490B2 (en) |
| EP (1) | EP3719575A1 (en) |
| JP (1) | JP7255512B2 (en) |
| KR (1) | KR102447767B1 (en) |
| CN (1) | CN111752087A (en) |
| SG (1) | SG10202002368YA (en) |
| TW (1) | TWI797436B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666789A (en) * | 2020-12-02 | 2021-04-16 | 湖南普照信息材料有限公司 | Attenuation type high-uniformity phase shift photomask blank and preparation method thereof |
| CN113488378A (en) * | 2021-07-21 | 2021-10-08 | 湖南普照信息材料有限公司 | Photomask blank and preparation method thereof |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60114811A (en) * | 1983-11-28 | 1985-06-21 | Hitachi Ltd | Optical waveguide and its production |
| JP3345447B2 (en) * | 1991-11-13 | 2002-11-18 | 株式会社東芝 | Manufacturing method of exposure mask |
| US5547787A (en) | 1992-04-22 | 1996-08-20 | Kabushiki Kaisha Toshiba | Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask |
| JP2002040625A (en) * | 1992-07-17 | 2002-02-06 | Toshiba Corp | Mask for exposure, resist pattern forming method and method for producing substrate for the mask |
| JP3064769B2 (en) | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK |
| KR0168134B1 (en) * | 1993-05-25 | 1999-01-15 | 사토 후미오 | Reflection type phase shifting mask, transmittance type phase shifting mask and the method for forming pattern |
| US5415953A (en) * | 1994-02-14 | 1995-05-16 | E. I. Du Pont De Nemours And Company | Photomask blanks comprising transmissive embedded phase shifter |
| US5985493A (en) * | 1998-04-08 | 1999-11-16 | Lucent Technologies Inc. | Membrane mask for projection lithography |
| JP4933753B2 (en) | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
| JP4551344B2 (en) | 2006-03-02 | 2010-09-29 | 信越化学工業株式会社 | Photomask blank and photomask |
| JP4509050B2 (en) | 2006-03-10 | 2010-07-21 | 信越化学工業株式会社 | Photomask blank and photomask |
| DE102008054139B4 (en) * | 2008-10-31 | 2010-11-11 | Schott Ag | Glass or glass-ceramic substrate with scratch-resistant coating, its use and process for its preparation |
| JP6264238B2 (en) * | 2013-11-06 | 2018-01-24 | 信越化学工業株式会社 | Halftone phase shift photomask blank, halftone phase shift photomask, and pattern exposure method |
| JP2016035559A (en) * | 2014-08-04 | 2016-03-17 | 信越化学工業株式会社 | Halftone phase shift photomask blank and method for manufacturing the same |
| JP6087401B2 (en) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | Mask blank, phase shift mask, and semiconductor device manufacturing method |
| JP6500791B2 (en) * | 2016-01-22 | 2019-04-17 | 信越化学工業株式会社 | Halftone phase shift photomask blank and method of manufacturing the same |
| JP6733464B2 (en) * | 2016-09-28 | 2020-07-29 | 信越化学工業株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
| JP6432636B2 (en) | 2017-04-03 | 2018-12-05 | 凸版印刷株式会社 | Photomask blank, photomask and photomask manufacturing method |
| KR20200054272A (en) | 2017-09-21 | 2020-05-19 | 호야 가부시키가이샤 | Mask blank, transfer mask, and method for manufacturing semiconductor device |
| JP6919475B2 (en) | 2017-09-29 | 2021-08-18 | 富士通株式会社 | Detection programs, devices, and methods |
| JP7063607B2 (en) | 2017-12-22 | 2022-05-09 | 株式会社三共 | Pachinko machine |
| JP7264083B2 (en) * | 2019-03-29 | 2023-04-25 | 信越化学工業株式会社 | PHASE SHIFT MASK BLANKS, MANUFACTURING METHOD THEREOF AND PHASE SHIFT MASK |
-
2020
- 2020-02-17 JP JP2020024101A patent/JP7255512B2/en active Active
- 2020-03-16 SG SG10202002368YA patent/SG10202002368YA/en unknown
- 2020-03-17 EP EP20163731.1A patent/EP3719575A1/en active Pending
- 2020-03-24 KR KR1020200035424A patent/KR102447767B1/en active IP Right Grant
- 2020-03-26 TW TW109110144A patent/TWI797436B/en active
- 2020-03-27 US US16/832,395 patent/US11307490B2/en active Active
- 2020-03-27 CN CN202010227055.1A patent/CN111752087A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP3719575A1 (en) | 2020-10-07 |
| JP2020204760A (en) | 2020-12-24 |
| KR20200115241A (en) | 2020-10-07 |
| KR102447767B1 (en) | 2022-09-26 |
| JP7255512B2 (en) | 2023-04-11 |
| US11307490B2 (en) | 2022-04-19 |
| US20200310241A1 (en) | 2020-10-01 |
| TWI797436B (en) | 2023-04-01 |
| CN111752087A (en) | 2020-10-09 |
| TW202102932A (en) | 2021-01-16 |
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