SG11201707780TA - Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method - Google Patents
Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming methodInfo
- Publication number
- SG11201707780TA SG11201707780TA SG11201707780TA SG11201707780TA SG11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA SG 11201707780T A SG11201707780T A SG 11201707780TA
- Authority
- SG
- Singapore
- Prior art keywords
- lithography
- underlayer film
- forming
- composition
- forming method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C261/00—Derivatives of cyanic acid
- C07C261/02—Cyanates
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
- C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D311/78—Ring systems having three or more relevant rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D173/00—Coating compositions based on macromolecular compounds obtained by reactions forming a linkage containing oxygen or oxygen and carbon in the main chain, not provided for in groups C09D159/00 - C09D171/00; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015078564 | 2015-04-07 | ||
PCT/JP2016/061397 WO2016163456A1 (en) | 2015-04-07 | 2016-04-07 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, and pattern formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201707780TA true SG11201707780TA (en) | 2017-10-30 |
Family
ID=57073237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201707780TA SG11201707780TA (en) | 2015-04-07 | 2016-04-07 | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
Country Status (8)
Country | Link |
---|---|
US (1) | US10359701B2 (en) |
EP (1) | EP3282318A4 (en) |
JP (1) | JP6673343B2 (en) |
KR (1) | KR102515839B1 (en) |
CN (1) | CN107430344B (en) |
SG (1) | SG11201707780TA (en) |
TW (1) | TW201708965A (en) |
WO (1) | WO2016163456A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201607444VA (en) | 2014-03-13 | 2016-10-28 | Mitsubishi Gas Chemical Co | Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin |
TWI662018B (en) * | 2014-03-13 | 2019-06-11 | 日商三菱瓦斯化學股份有限公司 | Resist composition and method for forming pattern |
US10747112B2 (en) | 2015-03-30 | 2020-08-18 | Mitsubishi Gas Chemical Company, Inc. | Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method |
US10642156B2 (en) | 2015-03-30 | 2020-05-05 | Mitsubishi Gas Chemical Company, Inc. | Resist base material, resist composition and method for forming resist pattern |
WO2019059202A1 (en) * | 2017-09-19 | 2019-03-28 | 三菱瓦斯化学株式会社 | Semiconductor lithography film forming composition, and resist pattern forming method and device |
US20210040290A1 (en) * | 2018-01-31 | 2021-02-11 | Mitsubishi Gas Chemical Company, Inc. | Composition, method for forming resist pattern and method for forming insulating film |
JP7469748B1 (en) | 2023-07-27 | 2024-04-17 | 三菱瓦斯化学株式会社 | Cyanate ester compound, its production method, resin composition, and cured product |
JP7469747B1 (en) | 2023-07-27 | 2024-04-17 | 三菱瓦斯化学株式会社 | Cyanate ester compound, its production method, resin composition, and cured product |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3774668B2 (en) | 2001-02-07 | 2006-05-17 | 東京エレクトロン株式会社 | Cleaning pretreatment method for silicon nitride film forming apparatus |
JP3914493B2 (en) | 2002-11-27 | 2007-05-16 | 東京応化工業株式会社 | Underlayer film forming material for multilayer resist process and wiring forming method using the same |
JP4382750B2 (en) | 2003-01-24 | 2009-12-16 | 東京エレクトロン株式会社 | CVD method for forming a silicon nitride film on a substrate to be processed |
JP3981030B2 (en) | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
JP2005187335A (en) | 2003-12-24 | 2005-07-14 | Midori Kagaku Kenkyusho:Kk | New cyanate ester and method for producing the same |
JP4388429B2 (en) | 2004-02-04 | 2009-12-24 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method |
JP4466854B2 (en) * | 2005-03-18 | 2010-05-26 | 信越化学工業株式会社 | Photoresist underlayer film forming material and pattern forming method |
JP4781280B2 (en) | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | Antireflection film material, substrate, and pattern forming method |
JP4638380B2 (en) | 2006-01-27 | 2011-02-23 | 信越化学工業株式会社 | Antireflection film material, substrate having antireflection film, and pattern forming method |
WO2009069712A1 (en) * | 2007-11-30 | 2009-06-04 | Nissan Chemical Industries, Ltd. | Blocked isocyanato bearing silicon containing composition for the formation of resist undercoat |
KR101397354B1 (en) | 2007-12-07 | 2014-05-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | Composition for forming base film for lithography and method for forming multilayer resist pattern |
JP5373335B2 (en) * | 2008-08-08 | 2013-12-18 | 株式会社神戸製鋼所 | Refrigeration equipment |
JP5742715B2 (en) | 2009-09-15 | 2015-07-01 | 三菱瓦斯化学株式会社 | Aromatic hydrocarbon resin and composition for forming underlayer film for lithography |
JP5266299B2 (en) * | 2010-12-01 | 2013-08-21 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method using the same |
JP5485185B2 (en) * | 2011-01-05 | 2014-05-07 | 信越化学工業株式会社 | Resist underlayer film material and pattern forming method using the same |
EP2743770B1 (en) * | 2011-08-12 | 2015-12-30 | Mitsubishi Gas Chemical Company, Inc. | Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method |
KR101821705B1 (en) | 2011-09-06 | 2018-01-25 | 주식회사 동진쎄미켐 | Phenolic self-crosslinking polymer and under-layer composition of resist including the same |
JP5859420B2 (en) * | 2012-01-04 | 2016-02-10 | 信越化学工業株式会社 | Resist underlayer film material, method for producing resist underlayer film material, and pattern forming method using the resist underlayer film material |
WO2014065422A1 (en) * | 2012-10-26 | 2014-05-01 | 三菱瓦斯化学株式会社 | Cyanogen-halide production method, cyanate ester compound and production method therefor, and resin composition |
US9828355B2 (en) | 2013-02-08 | 2017-11-28 | Mitsubishi Gas Chemical Company, Inc. | Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
TWI662018B (en) * | 2014-03-13 | 2019-06-11 | 日商三菱瓦斯化學股份有限公司 | Resist composition and method for forming pattern |
US10338471B2 (en) | 2014-08-08 | 2019-07-02 | Mitsubishi Gas Chemical Company, Inc. | Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method |
JP6670453B2 (en) | 2015-02-12 | 2020-03-25 | 三菱瓦斯化学株式会社 | Compound, resin, material for forming lower layer film for lithography, composition for forming lower layer film for lithography, lower layer film for lithography, method for forming resist pattern, method for forming circuit pattern, and method for purifying compound or resin |
-
2016
- 2016-04-07 WO PCT/JP2016/061397 patent/WO2016163456A1/en active Application Filing
- 2016-04-07 KR KR1020177031716A patent/KR102515839B1/en active IP Right Grant
- 2016-04-07 CN CN201680019414.6A patent/CN107430344B/en not_active Expired - Fee Related
- 2016-04-07 EP EP16776622.9A patent/EP3282318A4/en not_active Withdrawn
- 2016-04-07 JP JP2017511049A patent/JP6673343B2/en active Active
- 2016-04-07 TW TW105110916A patent/TW201708965A/en unknown
- 2016-04-07 SG SG11201707780TA patent/SG11201707780TA/en unknown
- 2016-04-07 US US15/565,018 patent/US10359701B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3282318A1 (en) | 2018-02-14 |
TW201708965A (en) | 2017-03-01 |
US10359701B2 (en) | 2019-07-23 |
US20180101096A1 (en) | 2018-04-12 |
WO2016163456A1 (en) | 2016-10-13 |
KR102515839B1 (en) | 2023-03-30 |
CN107430344B (en) | 2021-03-26 |
EP3282318A4 (en) | 2018-08-15 |
JP6673343B2 (en) | 2020-03-25 |
KR20170135891A (en) | 2017-12-08 |
CN107430344A (en) | 2017-12-01 |
JPWO2016163456A1 (en) | 2018-02-08 |
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