SG11202102270QA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, transfer mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202102270QA
SG11202102270QA SG11202102270QA SG11202102270QA SG11202102270QA SG 11202102270Q A SG11202102270Q A SG 11202102270QA SG 11202102270Q A SG11202102270Q A SG 11202102270QA SG 11202102270Q A SG11202102270Q A SG 11202102270QA SG 11202102270Q A SG11202102270Q A SG 11202102270QA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
manufacturing semiconductor
transfer
mask blank
Prior art date
Application number
SG11202102270QA
Inventor
Ryo Ohkubo
Hitoshi Maeda
Keishi Akiyama
Osamu Nozawa
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202102270QA publication Critical patent/SG11202102270QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Thin Film Transistor (AREA)
SG11202102270QA 2018-09-27 2019-09-10 Mask blank, transfer mask, and method of manufacturing semiconductor device SG11202102270QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018181764 2018-09-27
PCT/JP2019/035485 WO2020066591A1 (en) 2018-09-27 2019-09-10 Mask blank, transfer mask, and semiconductor-device manufacturing method

Publications (1)

Publication Number Publication Date
SG11202102270QA true SG11202102270QA (en) 2021-04-29

Family

ID=69952084

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202102270QA SG11202102270QA (en) 2018-09-27 2019-09-10 Mask blank, transfer mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US20220043335A1 (en)
JP (1) JP6821865B2 (en)
KR (1) KR20210062012A (en)
CN (1) CN112740106A (en)
SG (1) SG11202102270QA (en)
TW (1) TWI797383B (en)
WO (1) WO2020066591A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220066884A (en) * 2019-09-25 2022-05-24 호야 가부시키가이샤 Mask blank, phase shift mask and manufacturing method of semiconductor device
TW202422210A (en) * 2021-03-29 2024-06-01 日商Ｈｏｙａ股份有限公司 Photomask blank, method for manufacturing photomask, and method for manufacturing display device

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JP3475309B2 (en) * 1995-04-25 2003-12-08 大日本印刷株式会社 Method for manufacturing phase shift photomask
US7201947B2 (en) * 2002-09-10 2007-04-10 Headway Technologies, Inc. CPP and MTJ reader design with continuous exchange-coupled free layer
JP4643902B2 (en) * 2003-12-26 2011-03-02 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP2005208660A (en) 2004-01-22 2005-08-04 Schott Ag Phase shift type mask blank of super-high transmission ratio
US7141511B2 (en) * 2004-04-27 2006-11-28 Micron Technology Inc. Method and apparatus for fabricating a memory device with a dielectric etch stop layer
DE102005042732A1 (en) * 2004-10-14 2006-05-24 Samsung Electronics Co., Ltd., Suwon Semiconductor device manufacturing method, involves depositing metal oxide material over structure, annealing deposited metal oxide material, and etching formation through another structure using etch stop layer as an etch stop
JP4590556B2 (en) * 2005-03-11 2010-12-01 国立大学法人 奈良先端科学技術大学院大学 Manufacturing method of semiconductor device
KR100720334B1 (en) * 2005-05-13 2007-05-21 주식회사 에스앤에스텍 Half-tone type phase shift blank mask and manufacturing method of the same
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JP4181195B2 (en) * 2006-09-14 2008-11-12 株式会社東芝 Insulating film and semiconductor device using the same
KR100805018B1 (en) * 2007-03-23 2008-02-20 주식회사 하이닉스반도체 Method of manufacturing in semiconductor device
JP4358252B2 (en) * 2007-03-27 2009-11-04 株式会社東芝 Memory cell of nonvolatile semiconductor memory
US8283258B2 (en) * 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
CN103026416B (en) * 2010-08-06 2016-04-27 株式会社半导体能源研究所 Semiconductor device
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JP6389375B2 (en) * 2013-05-23 2018-09-12 Hoya株式会社 Mask blank, transfer mask, and manufacturing method thereof
JP2014239191A (en) * 2013-06-10 2014-12-18 富士通セミコンダクター株式会社 Semiconductor device manufacturing method
TWI611253B (en) * 2013-06-21 2018-01-11 Hoya Corp Mask substrate substrate, mask substrate, transfer mask, and the like, and method of manufacturing the same
US9726972B2 (en) * 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP5837257B2 (en) * 2013-09-24 2015-12-24 Hoya株式会社 Mask blank, transfer mask and transfer mask manufacturing method
US10571797B2 (en) * 2015-03-19 2020-02-25 Hoya Corporation Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP6573806B2 (en) * 2015-08-31 2019-09-11 Hoya株式会社 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device
JP6700120B2 (en) * 2016-06-24 2020-05-27 アルバック成膜株式会社 Photomask blank, photomask, and manufacturing method
JP3210705U (en) 2017-03-21 2017-06-01 怡利電子工業股▲ふん▼有限公司 Narrow-angle diffuser head-up display device

Also Published As

Publication number Publication date
TW202028876A (en) 2020-08-01
JPWO2020066591A1 (en) 2021-02-15
US20220043335A1 (en) 2022-02-10
KR20210062012A (en) 2021-05-28
TWI797383B (en) 2023-04-01
JP6821865B2 (en) 2021-01-27
WO2020066591A1 (en) 2020-04-02
CN112740106A (en) 2021-04-30

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