JP6455979B2 - Blank with resist layer, manufacturing method thereof, mask blank and imprint mold blank, transfer mask, imprint mold and manufacturing method thereof - Google Patents

Description

  The present invention relates to a blank with a resist layer, a manufacturing method thereof, a mask blank and an imprint mold blank, a transfer mask, an imprint mold, and a manufacturing method thereof.

  As a technique for forming a fine pattern on a semiconductor element or the like, a lithography technique using a transfer mask is known. Specifically, it is a technique for optically transferring a thin film pattern to a resist layer formed in advance on a semiconductor substrate using a transfer mask having a thin film pattern formed on a glass substrate.

  Moreover, nanoimprint lithography is mentioned as another technique for forming a fine pattern. Specifically, an imprint mold having a pattern formed in a nano level uneven shape on the surface is used and directly applied to a material layer for forming a fine structure previously formed on the surface of a semiconductor substrate or the like to be subjected to microfabrication. This is a technique for contacting and transferring a concavo-convex pattern.

  Such transfer masks and imprint molds also use lithography techniques. If the transfer mask is used, a thin film (for example, a light-shielding film and a phase shift mask film) on the glass substrate; It is manufactured by forming a predetermined design pattern on a glass substrate.

  When manufacturing a transmissive mask as a transfer mask, first, a resist layer is formed on a thin film formed on a light-transmitting substrate such as glass, and exposure and development are performed to form a resist pattern. Subsequently, using this as a mask, the thin film (and substrate if necessary) is etched to form a mask pattern (design pattern) to obtain a transfer mask.

  When the transmittance of exposure light (for example, ArF excimer laser) used for manufacturing a semiconductor element or the like with respect to the mask pattern is an optical density of 2.5 or more, a binary mask is obtained and the transmittance is 1 to 1. In the case of about 30%, a halftone phase shift photomask can be obtained (see Patent Document 1).

  In addition, when EUV (Extreme Ultra Violet) light is used as exposure light used in manufacturing semiconductor elements, a mask blank having a reflective layer, an absorption layer, and a hard mask layer formed on a substrate is used for reflection. A mold mask is obtained (see Patent Document 2).

  Further, when an imprint mold is manufactured, a resist layer is formed on a hard mask layer formed on the surface of a glass substrate, and exposure and development are performed to form a resist pattern. Subsequently, using this as a mask, the hard mask layer and the substrate are etched, a predetermined pattern is formed on the substrate, and an imprint mold is obtained (see Patent Document 3).

JP 2008-304956 A International Publication No. 2012/105508 JP 2011-73305 A

  In recent years, with the improvement in performance of information communication equipment and the increase in capacity of storage media, the miniaturization of circuit patterns of semiconductor elements, uneven patterns of storage media, and the like has been further advanced. In order to advance the miniaturization of these patterns, in addition to shortening the wavelength of exposure light, etc., further miniaturization of the design pattern formed on the transfer mask is required.

  In the photolithography technique, a design pattern formed on a photomask as a transfer mask is reduced and projected onto a wafer, so that the design pattern formed on the photomask is larger than a circuit pattern. However, if the size of the circuit pattern is much smaller than the wavelength of exposure light (for example, 193 nm (ArF excimer laser)), the resolution of the pattern is reduced due to light interference, and the design pattern is placed on the wafer. Even if it is transferred, there is a problem that the design pattern does not match the transferred circuit pattern. In order to solve such a problem, for example, an auxiliary pattern is formed on a photomask. As such an auxiliary pattern, SRAF (Sub Resolution Assist Feature) that assists in forming a circuit pattern without being transferred onto the wafer is known. In order to cancel the decrease in resolution due to light interference with light interference, the SRAF is required to have a line width of 40 nm or less.

  In the nanoimprint lithography technology, the pattern formed on the imprint mold is transferred as it is to the transfer target, but the line width of the pattern (for example, a line and space pattern) formed on the mold is 30 nm or less. It is requested to do.

  In a transfer mask or imprint mold, when a design pattern to be formed is miniaturized, it is required to miniaturize a resist pattern used when forming the design pattern. However, if the resist pattern is further miniaturized, there is a difference between the line width of the designed resist pattern and the line width of the formed resist pattern, that is, the CD (Critical Dimension) shift amount increases. Will occur.

  This is because in the case of a positive resist, the side surface of the unexposed portion of the resist layer is dissolved by the developer during development of the resist layer made of the resist material. Although the unexposed portion of the resist layer is difficult to dissolve in the developer, it does not completely dissolve. For this reason, when the unexposed portion of the resist layer is dissolved from the side surface by the developer, the line width of the resist pattern is reduced, and in some cases, the resist pattern is lost.

  In addition, when the resist pattern becomes finer with respect to the line width of the resist pattern due to the miniaturization of the resist pattern (when the aspect ratio of the resist pattern becomes larger), the resist pattern collapses and the desired resist pattern cannot be obtained. End up. Therefore, in order to miniaturize the resist pattern, the thickness of the resist layer must be reduced.

  In addition to the above, the dissolution of the unexposed portion by the developer proceeds isotropically, so the dissolution of the unexposed portion proceeds not only from the side surface direction but also from the thickness direction of the resist pattern. That is, there arises a problem that the thickness of the unexposed portion that should remain is reduced and the contrast of the pattern is lowered. This is because when dry etching or the like is performed using the resist pattern as a mask, the resist disappears before pattern formation of a thin film or the like to be etched is completed. This problem becomes prominent especially when the miniaturization of the resist pattern is advanced.

  With respect to the problem of an increase in the CD shift amount and a decrease in the thickness of the unexposed portion (resist pattern), it is conceivable that the unexposed portion of the resist layer is made less soluble in the developer. By doing so, the pattern can be miniaturized, but when the unexposed portion of the resist layer becomes less soluble, the developer is easily repelled by the resist layer, and the developer is exposed to the exposed portion of the resist layer (dissolved). It becomes difficult to contact or penetrate into the part to be). As a result, there is a problem that the exposed portion that should be a hole, a space, etc. is not dissolved by the developer and a hole is not formed (hole missing), or a portion that should become a space portion remains at the end of the line, and the cross section is T-shaped. The problem of the shape (T-top shape) occurs. In other words, the pattern to be formed is not formed, and the resolution of the resist pattern is deteriorated.

  As described above, there arises a problem that the miniaturization of the resist pattern and the resolution of the resist pattern cannot be realized at the same time.

  The present invention has been made in view of the above circumstances, and provides a blank with a resist layer and a method for manufacturing the same, which can achieve both the refinement of a predetermined pattern (line, space, hole, etc.) to be formed and the resolution of the pattern. The purpose is to provide. The blank with a resist layer can be applied to a transfer mask blank or an imprint mold blank, and an object of the present invention is to provide a transfer mask or imprint mold manufacturing method using these.

  The inventor first tried to solve the above problem by controlling the solubility of the unexposed portion of the resist layer in the developer. However, it has been found that, as the resist pattern is further miniaturized, it is impossible to achieve both the refinement of the resist pattern and the resolution of the resist pattern only by controlling the solubility, and the above problem cannot be solved.

  Therefore, the present inventor suppresses dissolution of the unexposed portion of the resist pattern from the side surface direction in order to advance the miniaturization of the resist pattern, while ensuring the resolution of the pattern in the exposed portion of the resist pattern. The inventors have found that the above problem can be solved by surely proceeding the dissolution from the thickness direction, and have completed the present invention.

  Specifically, the inventor first made the dissolution rate of the unexposed portion of the resist layer to the developer very small (or increased the contact angle of water on the surface of the unexposed portion of the resist layer). By doing so, the resist pattern can be miniaturized, but dissolution of the exposed portion of the resist pattern from the thickness direction may not proceed. This is because the water repellency of the unexposed portion of the resist layer is increased (the water contact angle is increased), and the developer is less likely to come into contact with the exposed portion.

  Therefore, the inventor formed a development accelerating layer on the resist layer. This development accelerating layer ensures that the developer is brought into contact with the surface of the exposed portion of the resist layer (the surface of the resist layer is altered by increasing the wettability of the surface of the resist layer and retaining the developer on the exposed portion). , And the like so that the developer can easily penetrate into the exposed area). In other words, the development accelerating layer is a layer that serves as a priming water for the developer.

  In this way, dissolution of the resist pattern due to the developer from the side direction of the unexposed portion can be suppressed, and the developer is spread over the exposed portion of the resist pattern to ensure dissolution from the thickness direction. You can go on.

(Configuration 1)
The configuration of the present invention is as follows:
A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The resist layer has a thickness of 200 nm or less;
The dissolution rate of the unexposed portion of the resist layer in the aqueous developer is 0.05 nm / second or less,
A blank with a resist layer, wherein a development accelerating layer that triggers the aqueous developer to spread over at least an exposed portion of the resist layer is formed on the resist layer.

In this specification, “blank with resist layer” refers to a substrate or a substrate with a thin film on which a pattern is formed on the base of a resist layer using a resist pattern formed by photolithography as a mask. Examples include a mask blank substrate used for manufacturing a mask for printing, an imprint mold blank used for an imprint mold, and the like.
The “aqueous developer” refers to a developer using water as a main solvent, and the solute component for development is not particularly limited. Specific examples of the aqueous developer include sodium hydroxide aqueous solution and potassium hydroxide aqueous solution, and organic alkaline aqueous solution such as tetramethylammonium hydride aqueous solution (TMAH aqueous solution).

In a positive resist, after a resist composition is applied to the substrate surface, a polymer component contained in the composition is polymerized by baking.
If the polymerization state of the resist layer is increased before exposure, the solubility of the resist layer in the developer is lowered. In such a resist layer, the surface and side surfaces of an unexposed portion (resist pattern line portion) are not easily dissolved (eroded) by the developer. On the other hand, since the surface polarity of the resist layer undergoing polymerization is low, the wettability of the aqueous developer is deteriorated, and the developer is less likely to penetrate into the exposed portion that should be dissolved by the developer. Thus, there may be a phenomenon that the resist remains in the space portion of the pattern. In the case of forming a fine pattern, it becomes difficult because the penetration of the developer into the exposed portion becomes worse.
Since this structure has a development promoting layer on the surface of the resist layer, the aqueous developer first penetrates into the development promoting layer and then infiltrates and dissolves the exposed portion of the resist layer.
Therefore, the exposed portion of the resist layer is poured out by the developer, and an unexposed portion that hardly dissolves in the aqueous developer and has little dimensional variation during the development process remains reliably. As a result, for example, even a fine pattern having a pattern dimension of 40 nm or less can be formed as designed.

(Configuration 2)
The configuration of the present invention is as follows.
A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The resist layer has a thickness of 200 nm or less;
The contact angle with respect to water on the surface of the unexposed portion of the resist layer is 66 ° or more,
A blank with a resist layer, wherein a development accelerating layer serving as an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer is formed on the resist layer.

In the resist layer, the hydrophobicity of the resist surface is increased and the surface energy is decreased by polymerization treatment (baking treatment) or the like at the time of forming the resist layer. This may be due to a decrease in the polarity of the resist layer surface or a decrease in the surface activity of the resist surface due to polymerization of the resin component of the resist layer. In this case, the unexposed portion is less likely to come into contact with the aqueous developer, and dissolution of the unexposed portion is suppressed. On the other hand, the developer repelled by the unexposed part does not surely come into contact with the exposed part, and an area where the developer does not come into contact with the exposed part may appear.
According to this configuration, the contact of the unexposed portion with the developer is suppressed, while the aqueous development solution is wetted on the surface of the exposed portion by the development accelerating layer, so that the phenomenon that the resist remains in the space portion of the pattern is effective. To be suppressed.

(Configuration 3)
In the above configuration 1 or 2, the development promoting layer is preferably water-soluble.
If the development accelerating layer is water-soluble, it is washed away by an aqueous developer during development, so that it is not necessary to add a step for removing the development accelerating layer.

(Configuration 4)
In any one of the first to third aspects, it is preferable that at least the surface of the exposed portion in the resist layer is deteriorated by the development accelerating layer.
If the surface of the resist layer is altered by the development accelerating layer, the surface of the resist layer can be more reliably wet during development.

(Configuration 5)
In any one of the configurations 1 to 4, it is preferable that the substrate has a thin film on the surface, and the resist layer is formed on the surface of the thin film.

(Configuration 6)
In the configuration 5, it is preferable that the thin film further includes a hard mask film.

(Configuration 7)
Said structure 5 or 6 WHEREIN: The said blank with a resist layer is a translucent board | substrate with which the said board | substrate has translucency with respect to the light of wavelength 200nm or less, The said thin film has a light shielding film. The mask blank is preferably.

(Configuration 8)
The blank with a resist layer is a translucent substrate in which the substrate is translucent to light having a wavelength of 200 nm or less, and the thin film is a semi-transparent light semi-transparent to light having a wavelength of 200 nm or less. A halftone phase shift mask blank having a transmission film is preferable.

(Configuration 9)
In the blank with a resist layer, the substrate is preferably a low thermal expansion substrate, and the thin film is preferably a reflective mask blank having at least a multilayer reflective film and an absorber film.

(Configuration 10)
In any one of the above configurations 1 to 6, the blank with a resist layer is preferably an imprint mold blank.

(Configuration 11)
Another configuration of the present invention is:
A transfer mask manufactured using the blank with a resist layer according to any one of the structures 7 to 9, wherein a predetermined pattern is formed on the thin film.

(Configuration 12)
Another configuration of the present invention is:
An imprint mold, wherein the imprint mold is manufactured using the blank with a resist layer according to the structure 10, and a predetermined pattern is formed on the substrate or a thin film on the surface thereof.

(Configuration 13)
Another configuration of the present invention is:
For a resist layer formed on a substrate and made of a positive resist material, the resist layer is baked to reduce the dissolution rate of the unexposed portion of the resist layer in an aqueous developer to 0.05 nm / A dissolution rate adjustment step of less than or equal to seconds,
A development promoting layer forming step of forming a development promoting layer on the resist layer, which is an opportunity to spread the aqueous developer on at least an exposed portion of the resist layer,
The thickness of the said resist layer is 200 nm or less, It is a manufacturing method of the blank with a resist layer characterized by the above-mentioned.

(Configuration 14)
Another configuration of the present invention is:
A resist layer formed on a substrate and made of a positive resist material is baked on the resist layer so that the contact angle with water on the surface of the unexposed portion of the resist layer is 66 ° or more. A contact angle adjusting step to perform,
A development promoting layer forming step of forming a development promoting layer on the resist layer, which is an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer, and
The thickness of the said resist layer is 200 nm or less, It is a manufacturing method of the blank with a resist layer characterized by the above-mentioned.

(Configuration 15)
In the configuration 13 or 14, it is preferable that the substrate has a thin film, and the resist layer is formed on a surface of the thin film.

(Configuration 16)
Another configuration of the present invention is:
A method for manufacturing a transfer mask, comprising a step of forming a predetermined pattern on a blank with a resist layer manufactured by any one of the above-described configurations 13 to 15.

(Configuration 17)
Another configuration of the present invention is:
A method for producing an imprint mold, comprising a step of forming a predetermined pattern on the substrate of the blank with a resist layer produced by any one of the above-described structures 13 to 15.

(Configuration 18)
Yet another configuration of the present invention is:
A mask blank with a resist layer, comprising a substrate and a resist layer formed on the substrate and made of a positive resist material,
The thickness of the resist layer at the convex portion of the blank on which the predetermined concavo-convex pattern is formed is 200 nm or less,
The dissolution rate of the unexposed portion of the resist layer in the aqueous developer is 0.05 nm / second or less,
A mask blank with a resist layer, wherein a development accelerating layer that triggers the aqueous developer to spread over at least an exposed portion of the resist layer is formed on the resist layer.

(Configuration 19)
Further, another configuration of the present invention is as follows.
A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The thickness of the resist layer at the convex portion of the blank on which the predetermined concavo-convex pattern is formed is 200 nm or less,
The contact angle with respect to water on the surface of the unexposed portion of the resist layer is 66 ° or more,
A mask blank with a resist layer, characterized in that a development accelerating layer is formed on the resist layer as an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer.

(Configuration 20)
Yet another configuration of the present invention is:
A transfer mask manufactured using the mask blank with a resist layer having the above-described configuration 18 or 19, wherein a predetermined pattern is formed on a thin film on the surface of the substrate.

(Configuration 21)
Yet another configuration of the present invention is:
The resist layer formed on the outermost surface of the blank on which a predetermined uneven pattern is formed and made of a positive resist material is baked on the resist layer so that the resist layer is not exposed to an aqueous developer. A dissolution rate adjusting step in which the dissolution rate of the exposed area is 0.05 nm / second or less;
A development accelerating layer forming step of forming a development accelerating layer on the resist layer that triggers the aqueous developer to spread over at least the exposed portion of the resist layer;
Using the resist pattern formed from the resist layer as a mask, forming a second predetermined uneven pattern on the blank on which the predetermined uneven pattern is formed;
Have
In the method for manufacturing a transfer mask, the thickness of the resist layer at the convex portion of the blank is 200 nm or less.

(Configuration 22)
Further, another configuration of the present invention is as follows.
The resist layer formed on the outermost surface of the blank on which a predetermined uneven pattern is formed and made of a positive type resist material is baked on the resist layer, whereby the surface of the unexposed portion of the resist layer A contact angle adjusting step in which the contact angle with respect to water is 66 ° or more;
A development accelerating layer forming step of forming on the resist layer a development accelerating layer that triggers the aqueous developer to spread over at least the exposed portion of the resist layer;
Using the resist pattern formed from the resist layer as a mask, forming a second predetermined uneven pattern on the blank on which the predetermined uneven pattern is formed;
Have
In the method for manufacturing a transfer mask, the thickness of the resist layer at the convex portion of the blank is 200 nm or less.

  ADVANTAGE OF THE INVENTION According to this invention, the blank with a resist layer which can make the refinement | miniaturization of the predetermined pattern (line, space, hole, etc.) formed and the resolution of this pattern compatible, and its manufacturing method can be provided. The blank with a resist layer can be applied to a transfer mask blank or an imprint mold blank, and can provide a transfer mask or imprint mold manufacturing method using these.

FIG. 1 is a schematic cross-sectional view of a mask blank with a resist layer and a transfer mask according to the present embodiment. FIG. 2 is a schematic diagram for explaining a method of manufacturing a mask blank with a resist layer according to the present embodiment. FIG. 3 is a schematic diagram for explaining a method of manufacturing the transfer mask according to the present embodiment using the mask blank with a resist layer according to the present embodiment. FIG. 4 is a schematic cross-sectional view of an imprint mold according to a modification of the present embodiment. FIG. 5 is a graph showing the relationship between the baking temperature for forming the resist layer, the water contact angle of the resist layer, and the dissolution rate of the resist layer with a developer. FIG. 6 is a schematic diagram for explaining a method of manufacturing a Levenson-type transfer mask in another embodiment. FIG. 7 is a schematic diagram (No. 1) for explaining a method of manufacturing a tritone transfer mask in another embodiment. FIG. 8 is a schematic diagram (No. 2) for explaining a method of manufacturing a tritone transfer mask in another embodiment. FIG. 9A is a schematic plan view of a tritone type transfer mask in this embodiment, and FIG. 9B is a schematic cross-sectional view.

[Embodiment 1]
In the present embodiment, the present invention will be described in detail in the following order based on the embodiment shown in the drawings.
1. 1. Mask blank with resist layer 1-1. Mask blank 1-2. Resist layer 1-3. Development accelerating layer 2. Transfer mask 3. Manufacturing method of transfer mask 3-1. Mask blank preparation step 3-2. Resist layer forming step 3-3. Dissolution rate adjusting step 3-4. Development promotion layer forming step 3-5. 3. Exposure process and development process 4. Effects of the present embodiment Modifications etc.

(1. Mask blank with resist layer)
As shown in FIG. 1A, a mask blank 10 with a resist layer according to this embodiment includes a mask blank 5 having a thin film 2 formed on at least one main surface of a substrate 1, a resist layer 7, and development. A resist layer 7 and a development promoting layer 9 are formed on the thin film 2 in this order. Hereinafter, each component will be described in detail.

(1-1. Mask blank)
The mask blank according to the present embodiment is not particularly limited as long as the thin film 2 is formed on at least one main surface of the substrate 1, and a known configuration can be adopted. Hereinafter, several configurations of the mask blank will be described.

(1-1-1. Binary type mask blank)
The binary type mask blank is a kind of transmission type mask blank and serves as a basis for a transfer mask used for forming a fine pattern by a photolithography method. In the binary mask, a light shielding film that substantially does not transmit exposure light is formed, and whether or not exposure light is transmitted is determined in a binary manner.

In the binary mask blank, the substrate 1 is a translucent substrate, and the thin film 2 has a light shielding film. A known substrate may be used as the light-transmitting substrate, and the light-transmitting substrate only needs to have a light-transmitting property with respect to light having a wavelength of 200 nm or less. In this embodiment, for example, it is made of a transparent material such as synthetic quartz glass, soda lime glass, aluminosilicate glass, borosilicate glass, or alkali-free glass. Therefore, an ArF excimer laser (wavelength: 193 nm), an F ₂ excimer laser (wavelength: 157 nm), or the like can be used as the exposure light for the transfer mask obtained from the binary mask blank according to the present embodiment.

  The light shielding film can be composed of a known composition as long as it has light shielding properties with respect to light having a wavelength of 200 nm or less. Specifically, it may be made of a material containing a transition metal alone or a compound thereof such as chromium, tantalum, ruthenium, tungsten, titanium, hafnium, molybdenum, nickel, vanadium, zirconium, niobium, palladium, rhodium. For example, it may be composed of chromium or a chromium compound in which one or more elements selected from elements such as oxygen, nitrogen, and carbon are added to chromium, and tantalum is selected from elements such as oxygen, nitrogen, and boron. You may comprise with the tantalum compound which added the 1 or more types of element.

  The light shielding film may be made of a material containing a compound of transition metal and silicon (including transition metal silicide, particularly molybdenum silicide). In this case, the light shielding film is made of a material containing a compound of a transition metal and silicon, and examples thereof include a material mainly composed of a transition metal and silicon and oxygen and / or nitrogen. Further, the light shielding film may be composed of a transition metal and a material mainly composed of oxygen, nitrogen and / or boron. As the transition metal, molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium, or the like is applicable.

  The light-shielding film may be composed of two layers of a light-shielding layer and a surface antireflection layer, and in addition to these two layers, three layers in which a back surface antireflection layer is further formed between the light shielding layer and the substrate 10 You may comprise. When the light-shielding film is formed of a molybdenum silicide compound, the light-shielding layer (MoSi or the like) and the surface antireflection layer (MoSiON or the like) have a two-layer structure. A configuration having a three-layer structure in which a back surface antireflection layer (MoSiON or the like) is added in between is exemplified.

  Moreover, it is good also as a composition gradient film comprised so that the composition in the film thickness direction of a light shielding film might differ continuously or in steps.

  The thickness of the light shielding film is not particularly limited, and may be determined so that, for example, the optical density (OD: Optical Density) is 2.5 or more with respect to the exposure light.

  The thin film 2 may have a hard mask film. This hard mask film is formed on the light shielding film and functions as an etching mask. Specifically, the hard mask film is made of a material having etching selectivity (etching resistance) with respect to an etchant for etching the light shielding film. In the present embodiment, for example, it is preferable to use chromium or a material made of a chromium compound in which elements such as oxygen, nitrogen, and carbon are added to chromium. At this time, the transfer mask may be manufactured with the hard mask film remaining on the light shielding film by providing the hard mask film with an antireflection function.

  Moreover, the thin film 2 may have an etching stopper layer. This etching stopper layer is formed between the substrate and the light shielding film and is made of a material having etching selectivity with both. In the present embodiment, for example, it is preferable to use chromium or a material made of a chromium compound in which elements such as oxygen, nitrogen, and carbon are added to chromium. For the etching stopper layer, a material that can be peeled off in synchronization with the hard mask film may be selected.

(1-1-2. Halftone phase shift mask blank)
The halftone phase shift mask blank is a kind of transmission type mask blank, and is a base of a phase shift mask used for forming a fine pattern by a photolithography method.

  In this halftone phase shift mask, a light semi-transmission part that transmits light with intensity that does not substantially contribute to exposure and a light transmission part that transmits light with intensity that substantially contributes to exposure are formed. The phase of the light transmitted through the light transmissive part is substantially reversed with respect to the phase of the light transmitted through the light transmissive part. The light passing through the vicinity of the boundary between the light semi-transmitting part and the light transmitting part wraps around each other's area, but the diffraction phenomenon occurs due to the above configuration and the wrapping light cancels each other. The light intensity can be made almost zero. As a result, the contrast at the boundary, that is, the resolution can be improved.

In the halftone phase shift mask blank, the substrate 1 is a light-transmitting substrate, and the thin film 2 has a light semi-transmissive film. A known substrate may be used as the light-transmitting substrate in the same manner as the binary mask blank, and it may be light-transmitting with respect to light having a wavelength of 200 nm or less. In this embodiment, for example, it is made of a transparent material such as synthetic quartz glass, soda lime glass, aluminosilicate glass, borosilicate glass, or alkali-free glass. Therefore, an ArF excimer laser (wavelength: 193 nm), an F ₂ excimer laser (wavelength: 157 nm), or the like can be used as the exposure light for the transfer mask obtained from the binary mask blank according to the present embodiment.

  The light semi-transmissive film transmits light having a wavelength of 200 nm or less at an intensity that does not substantially contribute to exposure (for example, 1% to 30% of exposure light) and has a predetermined phase difference (for example, 180 °). If it does, what is necessary is just to be comprised with a well-known composition. Specifically, it is made of a material containing a compound of a transition metal and silicon (including a transition metal silicide), and a material mainly composed of these transition metal and silicon and oxygen and / or nitrogen is exemplified. As the transition metal, molybdenum, tantalum, tungsten, titanium, hafnium, nickel, vanadium, zirconium, niobium, palladium, ruthenium, rhodium, chromium, and the like are applicable.

  The thin film 2 may be a multi-tone mask blank having a configuration in which one or more light semi-transmissive films and a light shielding film are laminated. In this case, with respect to the material of the light semi-transmissive film, in addition to the material constituting the light semi-transmissive film of the above-described halftone phase shift mask blank, a simple metal such as chromium, tantalum, titanium, aluminum, an alloy, or a compound thereof A material containing may be used.

  Further, in the case of a configuration having a light-shielding film on the light-semitransmissive film, if the light-semitransmissive film is made of a material containing a transition metal and silicon, It is preferable to use a material having etching selectivity (etching resistance). Specifically, chromium and chromium compounds obtained by adding elements such as oxygen, nitrogen, and carbon to chromium are exemplified.

  The composition ratio and film thickness of the material constituting the light semi-transmissive film are adjusted so as to have a predetermined transmittance with respect to the exposure light. The material constituting the light shielding film included in the binary mask blank can also be applied to the material constituting the light shielding film. The composition and film thickness of the material constituting the light shielding film are adjusted so as to have a predetermined light shielding performance (optical density) in the laminated structure of the light semi-transmissive film and the light shielding film.

  Further, like the binary mask blank, the thin film 2 may have a hard mask film. The hard mask film is formed on the light shielding film or the light semi-transmissive film and functions as an etching mask.

(1-1-3. Reflective mask blank)
The reflective mask blank is a kind of photomask blank, and serves as a basis for a reflective photomask used to form a fine pattern by photolithography. In this reflection type photomask, for example, EUV (Extreme Ultra Violet) light having a wavelength of 13.5 nm is used as exposure light. However, since EUV light is easily absorbed by a substance, the above-described refractive optical system is used. A transmission type mask that uses a reflection optical system cannot be used. Specifically, in the reflective mask, a reflective film that reflects EUV light and an absorber film that absorbs EUV light are formed, and these form a mask pattern.

In the reflective mask blank, the substrate 1 is a low thermal expansion substrate and the thin film 2 has at least a reflective film and an absorber film in order to suppress distortion of the transferred pattern due to heat during exposure. The material constituting the low thermal expansion substrate has a low thermal expansion coefficient in the range of about 0 ± 1.0 × 10 ⁻⁷ / ° C., more preferably in the range of about 0 ± 0.3 × 10 ⁻⁷ / ° C. SiO ₂ —TiO ₂ glass, which is a glass material, can be preferably used.

  In the thin film 2, the reflective film is a multilayer reflective film, and the absorber film is formed in a pattern on the multilayer reflective film.

  The multilayer reflective film is formed by alternately laminating high refractive index layers and low refractive index layers. As the multilayer reflective film, a Mo / Si periodic multilayer film in which Mo films and Si films are alternately stacked for about 40 periods, Ru / Si periodic multilayer film, Mo / Be periodic multilayer film, Mo compound / Si compound periodic multilayer film, Si / Nb periodic multilayer film, Si / Mo / Ru periodic multilayer film, Si / Mo / Ru / Mo periodic multilayer film, Si / Ru / Mo / Ru periodic multilayer film and the like. The material can be appropriately selected depending on the wavelength of the exposure light.

  The absorber film has a function of absorbing EUV light. For example, tantalum (Ta) alone or a material containing Ta as a main component can be preferably used. Such an absorber film preferably has an amorphous or microcrystalline structure in terms of smoothness and flatness.

  Further, a hard mask film as an etching mask may be formed on the absorber film. Further, a protective film serving as an etching stopper may be formed on the multilayer reflective film when the absorber film is patterned.

(1-2. Resist layer)
In the various mask blanks described above, a resist layer 7 is formed on the thin film 2. The resist layer 7 is formed of a material that is exposed by irradiation with an energy beam or the like, and a resist pattern obtained by exposing and developing the resist layer 7 corresponds to a fine pattern to be formed on a mask. In the present embodiment, a positive chemically amplified resist is used as a material constituting the resist layer 7 in order to cope with a fine pattern of about several tens of nm.

  A well-known thing can be used as a chemically amplified resist, For example, what contains a base polymer and a photo-acid generator at least is illustrated.

  A base polymer will not be specifically limited if it is a polymer which the solubility with respect to a developing solution (alkali aqueous solution etc.) increases with generation | occurrence | production of an acid. The photoacid generator is not particularly limited as long as it is a known one.

  In the present embodiment, the chemically amplified resist preferably includes a basic substance. The basic substance is preferably determined in consideration of a combination with a material (an acidic substance, a basic substance, etc.) constituting the development accelerating layer described later.

  The chemically amplified resist may contain other components such as a surfactant, a sensitizer, a light absorber, and an antioxidant in addition to the above components.

  In this embodiment, the dissolution rate (hereinafter also referred to as Rmin) of the unexposed portion of the resist layer 7 in the aqueous developer is 0.05 nm / second or less, preferably 0.03 nm / second or less, and More preferably, it is 01 nm / second or less. In other words, it is preferable that the unexposed portion of the resist layer 7 is very difficult to dissolve in the developer. By doing in this way, melt | dissolution from the side surface direction and thickness direction of the unexposed part of the resist layer 7 can be suppressed, and thinning of a resist pattern and film | membrane thinning can be prevented. As a result, a fine pattern to be formed on the mask corresponding to the resist pattern is formed as designed, and the resolution is ensured.

  In the present specification, Rmin (unit: nm / second) is defined as the dissolution rate of the unexposed area in 2.38% concentration TMAH (tetramethylammonium hydroxide) at room temperature (23 ° C.). In the above definition, TMAH is only used as an aqueous developer for defining Rmin, and does not mean that the aqueous developer is limited to TMAH in the present invention.

  In the present embodiment, the contact angle of water on the surface of the unexposed portion of the resist layer 7 is 66 ° or more, preferably 68 ° or more, and particularly preferably 70 ° or more. A large contact angle of water means that it is difficult for water to contact the unexposed portion of the resist layer 7 (for example, the wettability of water on the surface of the unexposed portion is reduced). Accordingly, since the aqueous developer is also less likely to come into contact with the unexposed area, dissolution of the unexposed area is suppressed.

  That is, in order to suppress the dissolution of the unexposed portion of the resist layer 7, the solubility of the resist layer 7 itself may be reduced by defining the upper limit value of Rmin, or the lower limit value of the contact angle of water is defined. By doing so, the developer may be difficult to contact the resist layer 7.

  The resist layer 7 is preferably as thin as possible. In this embodiment, the thickness is 200 nm or less, preferably 100 nm or less, more preferably 80 nm or less, and even more preferably 50 nm or less. This is to reduce the aspect ratio when forming the resist pattern so that the resist pattern does not collapse. Specifically, the aspect ratio is preferably 2.5 or less, particularly preferably less than 2. In this embodiment, since the resist layer 7 has the above-described properties, even if the thickness of the resist layer 7 is within the above range, the resist pattern film thickness can be suppressed to a minimum and formed. A sufficient contrast of the fine pattern to be formed can be ensured.

(1-3. Development acceleration layer)
In the present embodiment, the development promoting layer 9 is formed on the resist layer 7. The development promoting layer 9 is a layer that serves as an opportunity to spread the aqueous developer on at least the exposed portion of the resist layer 7. Specifically, a layer that can sufficiently dissolve the exposed portion by sufficiently contacting the aqueous portion with the aqueous developer while maintaining the state in which the solubility of the unexposed portion in the aqueous developer is extremely small. It is. In other words, a layer that serves as priming water for the developer is formed on the exposed portion where the developer is difficult to reach normally. In this embodiment, a layer that serves as a priming solution for the developer is formed by the following two methods, but the formation of the layer is not limited to these. Two methods may be combined.

  The first technique is a technique for forming the water-soluble development promoting layer 9, and the second technique is a technique for altering the surface layer portion of the resist layer 7 due to the presence of the development promoting layer 9.

(1-3-1. Water-soluble development acceleration layer)
As described above, the unexposed portion of the resist layer 7 has a very low solubility in the developing solution and is hydrophobic, so that it easily repels the developing solution and is exposed to the exposed portion existing in the vicinity of the unexposed portion. The developer that is about to come closes. As a result, the developer may be difficult to contact the exposed portion. However, the fact that the unexposed part tends to repel the developer itself is necessary to suppress thinning of the pattern and film slippage.

  Therefore, the development accelerating layer 9 is configured as a water-soluble layer in order to ensure that the developer comes into contact with the exposed portion. By doing so, at the time of development, the aqueous developer first easily contacts and penetrates the development promoting layer 9 to dissolve the development promoting layer 9. Since the development accelerating layer 9 is formed on the resist layer 7, the developer tends to stay on the resist layer 7 after the entire development accelerating layer 9 is dissolved, and as a result, also contacts the exposed portion. It becomes easy to do. That is, in the case where the development accelerating layer 9 is not present, the development accelerating layer 9 is provided and water-soluble compared to the case where the developer is repelled and hardly reaches the exposed portion due to the hydrophobicity of the unexposed portion. By doing so, it becomes possible to spread the developing solution to the exposed portion through the dissolution of the development accelerating layer 9. Therefore, the exposed portion is surely dissolved, and a predetermined resist pattern can be formed with high resolution without causing a loss in the resist pattern.

  In the present embodiment, the development accelerating layer 9 can be made water-soluble by using polyvinyl alcohol, polyvinyl pyrrolidone, polyaniline, or the like as a material constituting the development accelerating layer 9.

(1-3-2. Alteration of resist layer surface by development accelerating layer)
The surface of the resist layer 7 may be altered by the presence of the development promoting layer 9. Specifically, the development accelerating layer 9 may be formed so that only the surface portion of the resist layer 7 changes into a form in which the resist layer 7 can easily contact and penetrate into the developer.

  In this embodiment, in order to form such a development promoting layer 9, a material containing an acidic substance and a basic substance is used as a material constituting the development promoting layer 9. In the development accelerating layer 9 containing the material, a salt is generated by the reaction between the acidic substance and the basic substance. This salt is allowed to permeate (transfer) into the surface layer portion of the resist layer 7. As a result, the component transferred from the development accelerating layer 9 and the component originally contained in the resist layer 7 coexist in the surface layer portion of the resist layer 7 to which the salt has transferred. Therefore, the surface layer portion of the resist layer 7 is altered by a migration component from the development promoting layer 9, and a new layer (modified layer 8) is formed between the development promoting layer 9 and the resist layer 7 as a layer different from the resist layer 7. Formed between. That is, the altered layer 8 is a layer that was part of the resist layer 7 before the development promoting layer 9 was formed on the resist layer 7.

  The altered layer 8 is removed to some extent when the development promoting layer 9 is removed during development. This is because the altered layer 8 is a component in which the component of the development accelerating layer 9 and the component of the resist layer 7 coexist, and is in a pseudo-exposed state, improving the solubility in the developer and improving the altered layer 8. This is because will be removed.

  Since the removal of the altered layer 8 means that the surface layer portion of the resist layer 7 is removed, the surface state of the resist layer 7 after removal of the altered layer changes compared to the state before removal (for example, the surface layer). And the developer becomes easy to come into contact with the surface of the resist layer 7 (the wettability of the developer on the surface of the resist layer 7 is improved). As a result, the exposed portion can be reliably dissolved. In other words, by forming and removing the altered layer 8, it is possible to improve the state in which the developer does not easily reach the exposed portion on the surface of the resist layer 7, and the developer can be spread over the exposed portion. It should be noted that the unexposed portion that has not been altered hardly dissolves because the dissolution rate with respect to the developer is kept very low or the contact angle of water is large.

  Further, even when a substance (for example, a surfactant) that inhibits the developer from coming into contact with the exposed portion is present in the surface layer portion of the resist layer 7 due to the influence of the surface tension, When the portion is changed to the altered layer 8 and is removed, the substance is also removed, so that the developer easily comes into contact with the exposed portion of the resist layer 7.

  In addition, from the viewpoint of realizing a thin resist layer 7 and ensuring the contrast of the resist pattern, it is necessary to suppress the resist pattern from being thin. Therefore, in the present embodiment, the thickness of the altered layer 8 is preferably 0.1 nm or more and 20 nm or less, and more preferably 10 nm or less. 10% or less is preferable with respect to the thickness of the resist layer 7, and more preferably 5% or less. By setting the thickness within the above range, film slippage due to the removal of the surface layer portion (modified layer 8) of the resist layer 7 can be minimized.

  As a method for obtaining the thickness of the altered layer 8, for example, the altered layer 8 may be specified by using a known composition analysis method (such as XPS), and the thickness of the altered layer 8 may be obtained. You may obtain | require using the method.

  In the film reduction method, the amount of film reduction during development on the resist layer 7 when the altered layer 8 is not provided (the amount of reduction in the resist layer 7 in the thickness direction) and the development of the resist layer 7 when the altered layer 8 is provided. This is a method of recognizing the difference in the amount of film reduction at the time as the thickness of the altered layer 8. As described above, since the salt of the development accelerating layer 9 has entered the altered layer 8, it is more easily dissolved in the developer regardless of the exposed or unexposed area. Therefore, the difference in the amount of film reduction between the case where the deteriorated layer 8 is provided and the case where the deteriorated layer 8 is not provided corresponds to the amount of film decrease caused by removing the deteriorated layer 8. That is, the difference in the amount of film reduction can be the thickness of the altered layer 8.

  In order to form the above-described altered layer 8 due to the presence of the development accelerating layer 9, it is preferable that the combination of the resist layer 7 and the development accelerating layer 9 is appropriate. The present inventor is studying the combination, but the configurations of the resist layer 7 and the development accelerating layer 9 which the present inventor currently grasps will be described below.

  First, it is preferable that the resist layer 7 contains a basic substance, and the basic substance of the development accelerating layer 9 is more bulky than the basic substance of the resist layer 7. The term “bulky” in the present specification refers to a state in which the structural unit at the end of the molecule is sterically expanded by a hard substituent or the like, and the arrangement with other molecules and the rotational movement in the molecule are hindered. In addition, the “bulkyness” in the present specification specifically refers to the van der Waals volume of the substituent on the α-carbon, and is not uniquely defined by the molecular weight, such as a t-butyl group. It is an index that increases when a has a branched structure.

  As described above, the salt entering from the development accelerating layer 9 is generated by the reaction between the acidic substance and the basic substance. Therefore, the salt contains a basic substance. Therefore, if the basic substance of the development accelerating layer 9 is bulkier than the basic substance of the resist layer 7, the salt containing the basic substance of the development accelerating layer 9 is prevented from entering the entire resist layer 7. Can do.

  If the entire resist layer 7 becomes the deteriorated layer 8, the dissolution rate of the resist layer 7 in the developer, particularly the dissolution rate of the unexposed portion, increases, and falls outside the Rmin range described above. As a result, the film thickness of the resist pattern increases during development, and dissolution from the side surface also proceeds, making it impossible to achieve both miniaturization and resolution of the resist pattern. Therefore, it is preferable to provide the definition of the bulkiness of the basic substance as described above. Furthermore, if the above-mentioned bulkiness is followed, it is possible to prevent the basic substance that does not form a salt and is free in the development accelerating layer 9 from entering the resist layer 7 unnecessarily.

  The bulkiness of the basic substance may be examined by a known method. For example, mass spectrometry such as secondary ion mass spectrometry (SIMS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), etc. Alternatively, X-ray photoelectron spectroscopy (XPS) may be used.

  The resist layer 7 preferably contains a basic substance, and the basic substance of the development accelerating layer 9 preferably has a larger molecule than the basic substance of the resist layer 7. This is because the same effect as that of the above bulkiness is exhibited.

  Here, “the molecule is large” literally refers to the size of the “molecule size”. The size of this molecule may be defined using the known method described above. As an example of a simple technique, the molecular weights of basic substances may be compared and a substance having a large molecular weight may be regarded as “large molecule”.

  As a preferred example, the basic material of the resist layer 7 is preferably a lower amine, and the basic material of the development accelerating layer 9 is preferably a higher amine. In addition, it can be said that “the molecule is large” when the amine as the basic substance of the development accelerating layer 9 has a larger total mass number of substituents than the amine as the basic substance of the resist layer 7.

  The acidic substance of the development accelerating layer 9 is preferably an aromatic compound, and particularly preferably polyaniline. Further, the basic substance of the development accelerating layer 9 is preferably an amine, and specifically, a tetraalkylammonium hydride quaternary ammonium salt is preferable. More preferably, the development accelerating layer 9 contains polyaniline as an acidic substance and quaternary ammonium salt as a basic substance. In this case, the development accelerating layer 9 is composed mainly of a polyaniline resin. By doing in this way, since the development promotion layer 9 is comprised from a water-soluble polymer, the effect acquired when the development promotion layer 9 is water-soluble as described in (1-3-1) is also acquired. It is done. In addition, the main component said here refers to the component which exists exceeding 50% in a composition ratio.

(2. Transfer mask)
By using the mask blank 10 with a resist layer shown in FIG. 1A, it is possible to achieve both the refinement of a predetermined resist pattern (line and space, space, hole, etc.) to be formed and the resolution of the resist pattern. . Then, by etching the thin film 2 using the resist pattern as a mask, as shown in FIG. 1B, the thin film 2 on the substrate 1 is formed with a fine pattern corresponding to the resist pattern. Such a transfer mask 12 is obtained.

(3. Manufacturing method of transfer mask)
Next, a method for manufacturing a transfer mask will be described in detail. The transfer mask is manufactured by first manufacturing the above-described mask blank with a resist layer and then using the mask blank as a basis. FIG. 2 is an explanatory diagram illustrating a manufacturing process of the method for manufacturing a mask blank with a resist layer according to the present embodiment.

(3-1. Mask Blank Preparation Step)
First, a mask blank 5 having a thin film 2 formed on a substrate 1 is prepared. It does not restrict | limit especially as a mask blank, For example, the various mask blank mentioned above is illustrated. In the present embodiment, as shown in FIG. 2A, a mask blank 5 is prepared in which a thin film 2 is formed on a substrate 1 made of synthetic quartz glass. As a method for forming the thin film 2 on the substrate 1, a known technique such as a sputtering method may be used. Further, the composition of the thin film 2 and the film forming conditions may be set to known compositions and conditions.

(3-2. Resist layer forming step)
Subsequently, as shown in FIG. 2B, a resist layer 7 made of a positive chemically amplified resist material is formed on the thin film 2 of the mask blank 5. Specifically, the resist layer 7 may be formed by applying a resist solution containing a component of a chemically amplified resist material onto the thin film 2 using a known technique such as a spin coating method. The solvent used in preparing the resist solution is not particularly limited, and a known solvent may be used.

(3-3. Dissolution rate adjusting step)
Subsequently, with respect to the resist layer 7 formed on the thin film 2, the dissolution rate (Rmin) in the developer is adjusted. The dissolution rate of the resist layer 7 mainly varies depending on the temperature during baking (bake temperature), and the dissolution rate tends to decrease as the baking temperature increases. An example of a change in Rmin value with respect to a specific baking temperature is shown in FIG. FIG. 5 shows a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials), coated on a glass substrate and baked at a constant temperature of 120 ° C. to 160 ° C. for 10 minutes. The change of Rmin at the time of processing is shown. Note that Rmin can also be adjusted by increasing the baking time.

  Rmin can also be adjusted by changing the composition of the chemically amplified resist material constituting the resist layer 7. In the present embodiment, the dissolution rate is adjusted by performing a baking process on the resist layer 7. Therefore, the baking temperature may be controlled so that the dissolution rate in the developer is 0.05 nm / second or less depending on the chemically amplified resist material to be used. In the exposure process described later, the exposed resist layer 7 (exposed portion) is easily dissolved in the developer, but the dissolution rate of the unexposed resist layer 7 (unexposed portion) in the developer is determined in this step. An adjusted dissolution rate is maintained.

  In addition, by performing a baking process with respect to the resist layer 7, the contact angle of the water in the surface of an unexposed part also rises. The contact angle of water mainly changes depending on the temperature during baking (bake temperature), and the contact angle tends to increase as the baking temperature increases. FIG. 5 shows the relationship between the water contact angle and the baking temperature. The baking conditions for the resist layer 7 according to the graph of FIG. 5 are the same as described above. As shown in FIG. 5, when the baking temperature is increased, the water contact angle increases. When the resist layer 7 has a large water contact angle, the aqueous developer is less likely to come into contact with the unexposed area, and the unexposed area is less likely to dissolve in the aqueous developer. When the water contact angle with respect to the resist layer in the unexposed portion is 66 ° or more, preferably 68 ° or more, more preferably 70 ° or more, contact between the unexposed portion and the resist developer is suppressed.

  Also, the contact angle of water on the surface of the unexposed portion varies depending on the composition of the chemically amplified resist material constituting the resist layer 7. Therefore, the baking temperature may be controlled so that the contact angle of water is 66 ° or more depending on the chemically amplified resist material to be used.

(3-4. Development Acceleration Layer Formation Step)
After the dissolution rate adjusting step, a development promoting layer 9 is formed so as to cover the resist layer 7 as shown in FIG. Specifically, the development accelerating layer 9 may be formed by applying a coating solution containing components of the constituent material of the development accelerating layer 9 on the resist layer 7 using a known technique such as a spin coating method. After the development promoting layer 9 is formed, baking is performed. When the surface of the resist layer 7 is altered due to the presence of the development accelerating layer 9, as shown in FIG. 2D, the salt contained in the development accelerating layer 9 is added during or after the baking of the development accelerating layer 9. Transfer to the resist layer 7 to form the above-described deteriorated layer 8. Details will be described below.

  The salt contained in the development accelerating layer 9 is generated by a reaction between an acidic substance and a basic substance present inside the development accelerating layer 9. As a specific example of the coating liquid containing the constituent material of the development accelerating layer 9, when the acidic substance is polyaniline and the basic substance is amine, 90% by mass or more of the coating liquid is preferably water. . By doing so, salt is not excessively present in the development accelerating layer 9, and the altered layer 8 having an appropriate thickness can be easily formed. Even if both the resist layer 7 and the development accelerating layer 9 contain a basic substance, it is contained in the resist layer 7 made of a chemically amplified resist by using 90% by mass or more of water in the coating solution. Compared with a basic substance, the density | concentration of the basic substance contained in the image development acceleration layer 9 formed using a coating liquid can be made thin. By utilizing this difference in density, it becomes possible to prevent the basic substance in the development accelerating layer 9 from penetrating into the altered layer 8 and the resist layer 7 therebelow.

  The mechanism by which the altered layer 8 is formed can be considered as follows, for example.

  When the basic substance contained in the resist layer 7 and the basic substance contained in the development accelerating layer 9 are the same type of compound (for example, both amines), the two basic substances are likely to be mixed together. However, when the concentration of the coating solution containing the constituent material of the development accelerating layer 9 is decreased as described above, the basic substance contained in the development accelerating layer 9 does not penetrate to a certain depth or more due to the concentration difference. That is, it is difficult for the resist layer 7 to penetrate beyond the surface layer portion of the resist layer 7. As a result, a portion where both basic substances gather is formed between the resist layer 7 and the development accelerating layer 9. Among them, the resist layer 7 receives the salt of the development accelerating layer 9 (that is, a salt in which an amine is bonded to polyaniline). As a result, the surface layer portion of the resist layer 7 changes to the altered layer 8.

  The mask blank 10 with a resist layer according to the present embodiment is manufactured by appropriately performing other processes such as cleaning through the above steps as shown in FIG.

(3-5. Exposure process and development process)
Next, as shown in FIG. 3, the resist layer is patterned using the manufactured mask blank with a resist layer, thereby manufacturing a transfer mask. First, as shown in FIG. 3A, a pattern corresponding to the pattern to be formed on the transfer mask is formed on the resist layer 7 on the mask blank 10 with a resist layer using an electron beam drawing machine or the like. The exposure is performed as follows. After the exposure, an exposed resist layer 7 (exposed portion 7a) and an unexposed resist layer 7 (unexposed portion 7b) are formed.

  Subsequently, the mask blank 10 with a resist layer after exposure is developed using an aqueous developer (see FIG. 3B). An aqueous developer refers to a developer that uses water as the main solvent. In the present embodiment, the aqueous developer is not particularly limited as long as it can dissolve the exposed portion 7a of the resist layer. For example, an aqueous sodium hydroxide solution, an aqueous potassium hydroxide solution, TMAH (tetramethylammonium hydroxide), and the like. An alkaline aqueous solution is exemplified.

  During development, the development accelerating layer is first dissolved, and at that time, at least a part of the altered layer is dissolved and removed. As a result, the developer comes into contact with the resist layer 7 located immediately below the deteriorated layer. Then, as shown in FIG. 3C, the exposed resist layer (exposed portion 7a) is dissolved and removed by a developer to form a resist pattern 7p. At this time, since the mask blank 10 with a resist layer has the above-described configuration, the exposed portion 7a is surely dissolved and removed, while the dissolution rate of the unexposed portion 7b is kept very low. For this reason, the resist pattern 7p is hardly melted from the side surface and the thickness direction, and the thinning of the resist pattern 7p and film thinning do not occur.

  Accordingly, by etching the thin film 2 using the formed resist pattern 7p as a mask, a transfer mask having a designed pattern can be obtained (see FIGS. 3D and 3E).

(4. Effects of the present embodiment)
In this embodiment, in order to prevent thinning of the resist pattern when forming a fine resist pattern, the developer contacts the exposed portion while maintaining the state in which the unexposed portion of the resist layer is hardly dissolved in the developer. Alternatively, a development accelerating layer serving as a priming water for the developer is formed on the resist layer so as to easily penetrate. By doing so, the developer is surely in contact with the exposed portion while suppressing dissolution of the unexposed portion from the side and thickness directions as much as possible, so that only the exposed portion is dissolved without almost dissolving the unexposed portion. It can be dissolved reliably.

  Therefore, even if the resist pattern to be formed becomes fine, the resist pattern can be prevented from thinning and film slipping, so that the risk of loss of the resist pattern is reduced and the developer cannot contact the exposed portion. Pattern omission can be prevented. That is, both the miniaturization of the pattern and the resolution can be achieved. Accordingly, the contrast of the resist pattern can be ensured, and the thinning of the resist layer indispensable for making the resist pattern fine can be easily realized.

  In order to realize a state in which the unexposed portion of the resist layer is hardly dissolved in the developer, first, it is conceivable that the unexposed portion of the resist layer itself is hardly dissolved in the developer. In this case, the dissolution rate (Rmin) of the unexposed area in the developer is set to 0.05 nm / second or less. As another method, it is conceivable to make the developer difficult to contact the unexposed portion. In this case, since the developer is aqueous, the contact angle of water on the surface of the unexposed area is set to 66 ° or more.

  Further, in order to make the development accelerating layer a layer that serves as a priming water for the developer, the development accelerating layer is water soluble. By doing so, the aqueous developer is likely to come into contact with the development promoting layer formed on the resist layer, and after the development promoting layer is dissolved, the remaining developer is likely to stay on the resist layer. Become. As a result, the developer can easily reach the exposed portion of the resist layer, the exposed portion is reliably dissolved, and the resist pattern can be prevented from coming off.

  In addition, the surface of the resist layer is altered due to the presence of the development accelerating layer. Specifically, the salt generated in the reaction between the acidic substance and the basic substance contained in the material constituting the development accelerating layer is transferred to the resist layer, and the surface layer portion of the resist layer is located between the development accelerating layer and the resist layer. A deteriorated layer formed by modifying the (unexposed portion and exposed portion) is generated. Unlike the resist layer, this deteriorated layer is easy to contact and dissolve in the developer, so that the developer sufficiently comes into contact with the exposed portion of the resist layer existing immediately below the deteriorated layer. As a result, the exposed portion is surely dissolved, and the resist pattern can be prevented from coming off. In addition, about the part which the unexposed part of the resist layer changed and became a deteriorated layer, it becomes easy to melt | dissolve with a developing solution, but about the unexposed part which has not deteriorated, since Rmin is in said range, Since the state in which it is hardly dissolved by the developer is maintained, the resist pattern film slip can be suppressed to about the thickness of the deteriorated layer. Therefore, the contrast of the pattern is not lowered due to the film loss of the resist layer.

  In this embodiment, the resist layer is baked as a method for setting Rmin of the unexposed portion of the resist layer within the above range. This is because by increasing the temperature during the baking treatment, the resist layer is baked and hardened, and Rmin tends to decrease. In addition, since the contact angle of water on the surface of the unexposed area tends to be increased by performing this baking process, the baking process may be performed even when the contact angle is 66 ° or more.

  Further, the mask blank with a resist layer according to the present embodiment is not limited to the configuration of the mask blank because the resist pattern and the development accelerating layer are compatible with both the miniaturization of the resist pattern and the resolution. Therefore, the configuration of the mask blank can be various. For example, the mask blank may be a binary mask blank, a halftone phase shift mask blank, or a reflective mask blank.

(5. Modifications)
In the above-described embodiment, the mask blank with a resist layer and the transfer mask manufactured from the mask blank are described. However, if the resist layer and the development accelerating layer are configured as described above, the resist layer and The development accelerating layer may be formed on another blank. For example, the resist layer and the development accelerating layer described above may be formed on the imprint mold blank.

  The imprint mold blank is a basis of an imprint mold used for forming a fine pattern by, for example, a nanoimprint lithography method. In this imprint mold, the mold is brought into contact with a transfer target (for example, a photocurable resin, a thermosetting resin, etc.), and the fine pattern formed on the mold is 1: 1 on the transfer target. Transcript.

  In the imprint mold, the substrate is made of a transparent material, and the thin film 2 has a hard mask film. Examples of the transparent material include quartz and sapphire. Examples of the hard mask film include chromium or a compound containing chromium.

  Then, by etching the thin film 2 and the substrate 1 using the resist pattern as a mask, an imprint mold 13 in which a fine pattern is formed on the surface 1a of the substrate 1 is obtained as shown in FIG.

(Compatibility between the constituent material of the resist layer and the constituent material of the development promoting layer)
In the embodiment described above, the resist layer has a basic substance, and the degree of salt penetration in the development accelerating layer is defined by the bulk and size of the basic substance in the development accelerating layer. However, this is merely an example, and the degree of salt penetration may be determined by other substances without depending on basic substances. Moreover, as long as the altered layer can be formed, compounds other than the above-described compounds may be used as the acidic substance and the basic substance contained in the development accelerating layer.

  Examples of the basic substance of the development accelerating layer include amine compounds that are soluble in water and have a relatively bulky structure. The number of carbon atoms contained in the molecule of the amine compound is preferably 1-30. Specifically, piperazine, morpholine, pentylamine, dipropylamine, ethylenediamine, 2-heptylamine, 2-aminopyridine, 2-aminoethanol, cyclohexylamine, diisopropylamine, 4-dimethylaminopyridine, 2-dimethylaminoethanol N, N-diethylethylenediamine, N-isopropylethylenediamine, 3-dimethylaminopropionitrile, N, N-dimethylcyclohexylamine, N, N-dimethyl-n-dodecylamine, (S)-(+)-2 -Amino-1-butanol, N, N-dimethyl-1,3-propanediamine, 2-amino-2-methyl-1,3-propanediol, 2-amino-2-methyl-1,3-propanediol, N, N, N ′, N′-tetramethylethylenedia Emissions, N, N, N ', N'- tetramethyl-1,3-propanediamine, and the like.

Moreover, when a basic substance is a quaternary amine, it is preferable that it is ammonium hydride. For example, an ammonium hydroxide compound represented by the following general formula (1) is preferable. In formula (1), examples of R ₁ , R ₂ , R ₃ , and R ₄ include an alkyl group having 1 to 7 carbon atoms, an alcohol group, and an aryl group. Specific examples include tetramethylammonium hydride, ethyltrimethylammonium hydride, tetraethylammonium hydride, triethylbutylammonium hydride, tributylethylammonium hydride, tetra-nbutylammonium hydride, tetra-sbutylammonium hydride, tetra-tbutylammonium hydride and the like. The

  The acidic substance of the development accelerating layer is preferably an organic acid having an acidic group such as a carboxy group or a sulfo group, but it does not matter whether it is aromatic or aliphatic. Examples of the acidic substance having a carboxy group include saturated fatty acids, unsaturated fatty acids, aromatic fatty acids and the like. Examples of organic acids having a sulfo group include benzenesulfonic acids, alkylbenzenesulfonic acids, aminobenzenesulfonic acids, alkyl-substituted aminobenzenesulfonic acids, and the like.

[Embodiment 2]
In the above embodiment, the case of a binary mask blank (in addition, a halftone phase shift mask blank or a reflective mask blank) is exemplified. On the other hand, the mask blank according to the present invention may be applied to the formation of other types of transfer masks. For example, the substrate 1 or the thin film 2 formed on the substrate 1 is dug by etching or the like to form a step (unevenness), and a phase shifter portion is provided, thereby providing a Levenson type transfer mask 12 or a tritone type transfer. The mask 12 for manufacturing may be produced.

  It should be noted that both the case where the Levenson-type transfer mask 12 and the tritone-type transfer mask 12 are manufactured and the case where the binary-type transfer mask 12 shown in the above-described embodiment is manufactured are described above. It can be produced from the mask blank 5 shown in the form. However, as shown in FIG. 6 to be described later, for example, when the Levenson type transfer mask 12 is manufactured, the mask blank 5 shown in the above embodiment is once dug (first) predetermined. After the concavo-convex pattern is formed, a resist layer (second resist layer 7 ′) is again formed on the mask blank 5. At the time of forming the second resist layer 7 ', the features described in detail in the above embodiment can be applied. This will be described below.

  A method for manufacturing the Levenson-type transfer mask 12 will be described. Hereinafter, unless otherwise specified, the same as the above embodiment.

  The mask blank 5 shown in the above embodiment is prepared, and the mask blank 5 is processed until the stage shown in FIG. Also in this case, of course, the water-soluble development promoting layer 9 (and thus the altered layer 8) is provided on the resist layer 7.

  Thereafter, as shown in FIG. 6A, the light-transmitting substrate is etched using the thin film 2 as a mask.

  In this example, as shown in FIG. 6B, the second resist layer 7 'is formed on the translucent substrate where the thin film 2 is present. The material, formation conditions, etc. of the second resist layer 7 'may be the same as those in the above embodiment. Also in this case, the water-soluble development accelerating layer 9 (and thus the altered layer 8) is provided on the second resist layer 7 '. In FIG. 6B, the reason why the recess is formed on the outermost surface of the water-soluble development promoting layer 9 is that the influence of the recess of the translucent substrate is exerted on the outermost surface to some extent. This is because there is an intention to show.

  Next, as shown in FIG. 6C, the second resist layer 7 'is exposed and developed. As a result, a second resist pattern 7'p is formed.

  In this state, as shown in FIG. 6D, the thin film 2 is removed using the second resist pattern 7'p as a mask. Thus, a second predetermined uneven pattern is formed.

  Finally, as shown in FIG. 6E, the second resist pattern 7'p is removed, and a Levenson type transfer mask is completed.

  Next, a method for manufacturing a tritone transfer mask will be described.

  The mask blank shown in the above embodiment is prepared. However, as shown in FIG. 7A, the thin film 2 in the mask blank of this example includes, in order from the translucent substrate side, a light semi-transmissive film 2a (for example, MoSiON), a light shielding film 2b (for example, CrON and TaN), It is comprised by. Also in this case, of course, the water-soluble development promoting layer 9 (and thus the altered layer 8) is provided on the resist layer 7.

  7B and 7C, the light shielding film 2b is etched using the resist pattern 7p as a mask to remove the resist pattern 7p.

  Thereafter, as shown in FIG. 7D, the light shielding film 2b is etched. Thus, a (first) predetermined uneven pattern is formed.

  In this example, as shown in FIG. 8A, the second resist layer 7 'is formed on the translucent substrate on which the light semi-transmissive film 2a is formed. The material, formation conditions, etc. of the second resist layer 7 'may be the same as those in the above embodiment. Also in this case, the water-soluble development accelerating layer 9 (and thus the altered layer 8) is provided on the second resist layer 7 '. In FIG. 8A, the reason why the outermost surface of the water-soluble development accelerating layer 9 is formed with a depression is that the influence of the depression of the translucent substrate is exerted on the outermost surface to some extent. This is because there is an intention to show.

  Next, as shown in FIG. 8B, the second resist layer 7 'is exposed and developed. As a result, a second resist pattern 7'p is formed.

  In this state, as shown in FIG. 8C, the light semi-transmissive film 2a is removed using the second resist pattern 7'p as a mask to expose the substrate 1.

  Thereafter, as shown in FIG. 8D, the second resist pattern 7'p is removed. In this way, a second predetermined concavo-convex pattern is formed, and a tritone transfer mask is completed.

  As described above, also in the blank with a resist layer in the middle of the production of the Levenson type transfer mask (FIG. 6B) and the blank with the resist layer in the middle of the production of the tritone type transfer mask (FIG. 8A). As in the above embodiment, the water-soluble development promoting layer 9 (and thus the altered layer 8) is formed on the second resist layer 7 ′. Therefore, the technical idea of the present invention can also be applied to this embodiment.

The configuration of this embodiment is summarized as follows.
“A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The thickness of the resist layer “at the convex portion of the blank on which the predetermined concavo-convex pattern is formed” is 200 nm or less,
The dissolution rate of the unexposed portion of the resist layer in the aqueous developer is 0.05 nm / second or less,
A blank with a resist layer, wherein a development accelerating layer that triggers the aqueous developer to spread over at least an exposed portion of the resist layer is formed on the resist layer. "

  The above definition focuses on the second resist layer 7 '. More specifically, when the second resist layer 7 ′ is formed, for example, in the case of a blank with a resist layer in the process of manufacturing the Levenson-type transfer mask 12, as shown in FIG. When the thickness of the second resist layer 7 ′ is measured from the dug portion (concave portion) of the conductive substrate, the thickness becomes considerable. This is the same as shown in FIG. 8B even in the case of the tritone type.

  However, the reason why the thickness of the resist layer 7 is specified to be 200 nm or less in the above embodiment is to reduce the aspect ratio when forming the resist pattern so that the resist pattern does not collapse. . As can be seen from FIG. 6C and FIG. 8B, the second portion formed in the digging portion of the translucent substrate such as the Levenson type or the digging portion of the tritone type semi-transmissive film. In the resist layer 7 ', there is almost no concern about the collapse of the resist pattern. Rather, the collapse of the resist pattern or the like largely depends on the thickness of the second resist layer 7 'on the outermost surface of the convex portion of the blank provided with the substrate or thin film on which the predetermined pattern is formed. Therefore, in the above definition, the thickness of the resist layer “on the blank convex portion” is defined as 200 nm or less. By doing so, it can be naturally understood that the same effect as the above-described embodiment can be obtained in this embodiment. Therefore, even if there is no proviso described above, it can be clearly understood that the thickness of the resist layer refers to the thickness of the resist layer on the uppermost surface of the blank that is the portion farthest from the lower surface of the blank.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the embodiment mentioned above at all, and can be variously modified within the range which does not deviate from the summary of this invention. For example, the content of [Embodiment 1] and the content of [Embodiment 2] may be appropriately combined, or the appropriately combined content may be variously modified.

  Hereinafter, although this invention is demonstrated based on a more detailed Example, this invention is not limited to these Examples.

Example 1
(Mask blank preparation process)
In this example, a phase shift mask blank was prepared by forming a light semitransmissive film and a light shielding film in this order on a substrate.

  First, a single-layer MoSiN film having a thickness of 69 nm was formed as a light semi-transmissive film on a substrate made of synthetic quartz glass and having translucency using a single-wafer DC sputtering apparatus. The conditions at that time were as follows.

A mixed target (atomic% ratio Mo: Si = 10: 90) of molybdenum (Mo) and silicon (Si) is used as a sputtering target, and a mixed gas atmosphere of argon (Ar), nitrogen (N ₂ ), and helium (He) Reactive sputtering (DC sputtering) was performed at a gas pressure of 0.3 Pa and a gas flow rate ratio of Ar: N ₂ : He = 5: 49: 46 with a DC power supply of 2.8 kW. After sputtering, a heat treatment (annealing treatment) was performed at 250 ° C. for 5 minutes.

  The light semi-transmissive film is also a phase shift film for ArF excimer laser (wavelength 193 nm). This phase shift film had a transmittance of 5.24% and a phase difference of 173.85 degrees with respect to an ArF excimer laser (wavelength 193 nm).

  Thereafter, a light-shielding film was formed on the light semi-transmissive film using a single-wafer DC sputtering apparatus. The light shielding film has a three-layer structure as follows.

  First, a CrOCN layer having a thickness of 30 nm was formed as a first light shielding film. The conditions at that time were as follows.

In a mixed gas atmosphere of argon, carbon dioxide, nitrogen and helium (gas pressure 0.2 Pa, gas flow ratio Ar: CO ₂ : N ₂ : He = 22: 39: 6: 33) using a chromium target as a sputtering target Then, the power of the DC power source was set to 1.7 kW, and reactive sputtering was performed.

  Next, a CrN layer having a thickness of 4 nm was formed as a second light shielding film. The conditions at that time were as follows.

Using a chromium target, reactive sputtering is performed with a DC power supply of 1.7 kW in a mixed gas atmosphere of argon and nitrogen (gas pressure 0.1 Pa, gas flow ratio Ar: N ₂ = 83: 17). It was.

  Finally, a 14 nm thick CrOCN layer was formed as a third light-shielding film. The conditions at that time were as follows.

In a mixed gas atmosphere of argon, carbon dioxide, nitrogen and helium (gas pressure 0.2 Pa, gas flow ratio Ar: CO ₂ : N ₂ : He = 21: 37: 11: 31) using a chrome target, DC The power of the power source was 1.8 kW, and reactive sputtering was performed.

  Through the above steps, a light shielding film having a total thickness of 48 nm was formed. This light-shielding film had an optical density (OD) of 3.1 at a wavelength of 193 nm in a laminated structure with a phase shift film.

  Thus, the mask blank in this example was produced.

(Resist layer formation process)
The HMDS treatment was performed on the light shielding film of the mask blank under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials) was spin-coated on the light shielding film.

(Dissolution rate adjustment process)
Then, the baking process was performed on condition of 135 degreeC-10 minutes using the heat drying apparatus. The film thickness of the resist layer was 100 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.05 nm / second. The water contact angle was approximately 66.8 °.

(Development acceleration layer forming step)
Subsequently, a coating solution containing components of the constituent material for the development accelerating layer was spin-coated on the resist layer. In addition, water and isopropyl alcohol were used as the solvent in the coating solution. The mass ratio was water: IPA = 90: 10. Aqua Save (registered trademark) manufactured by Mitsubishi Rayon Co., Ltd. was used as a solute in the coating solution. At this time, the mass ratio of the solute and the solvent was solute: solvent = 1-3: 97-99. Then, the predetermined heat drying process (baking process) was performed using the heat drying apparatus. The film thickness of the development promoting layer was 20 nm. The altered layer was formed by allowing the salt of the development accelerating layer to enter the surface layer portion of the resist layer by the baking treatment in the development accelerating layer forming step. In addition, as a result of obtaining | requiring the thickness of a deteriorated layer using the film reduction method, the thickness of the deteriorated layer was 5 nm.

  Through the above steps, a mask blank with a resist layer in this example was produced.

(Resolution evaluation)
The obtained mask blank with a resist layer was subjected to drawing exposure with an electron beam of 50 kV, and then subjected to a baking process (PEB: Post Exposure Bake) at 120 ° C. In the drawing exposure processing, a line pattern with pattern dimensions of 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, and 80 nm, and a hole pattern with hole diameters of 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, and 80 nm, respectively. Was formed. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern. The development accelerating layer was peeled off by the developer.

Next, the formed resist pattern was evaluated.
As a line pattern, a line of 80 to 50 nm could be formed. In the 40 nm line pattern, the line portion was confirmed to be thin, and in the 30 nm line and space pattern, the line collapse was partially confirmed.
In addition, a hole pattern of 80 to 40 nm could be formed as the hole pattern. In the pattern in which the hole diameter was 30 nm, there was a region where the hole diameter was clearly enlarged, and a region partially connected to the adjacent hole was confirmed.

  From this, it is considered that a resist pattern having a pattern dimension of about 50 nm can be formed by using the mask blank with a resist layer having the specifications according to the present embodiment. Further, by correcting the drawing conditions and the like, it can be expected that the thinning of the line portion during development can be expected, and a resist pattern having a pattern dimension of about 40 nm can be formed.

  Further, according to the configuration of this example, it is considered that the developing time can be shortened because the exposed portion of the aqueous developer can be dissolved even in a fine hole pattern of 30 nm.

(Preparation of transfer mask)
Subsequently, drawing exposure with a 50 kV electron beam was performed on the mask blank with a resist layer produced in the same manner up to the development promoting layer forming step described above, and then a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm. Based on the above evaluation, the DOSE amount at the time of drawing exposure was corrected. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.
Using this resist pattern as a mask, the light shielding film and the light semi-transmissive film were etched to produce a phase shift mask. The phase shift mask had a pattern formed with excellent transfer accuracy with respect to the resist pattern shape. .

(Example 2)
In this example, a mask blank with a resist layer was produced by the same method except that the baking temperature in the dissolution rate adjusting step in Example 1 was set to 140 ° C. for 10 minutes. The dissolution rate of the resist layer after baking in the developing solution (2.38% TMAH) is 0.03 nm / second, the water contact angle is about 67.2 °, and it is formed on the resist layer surface. The thickness of the altered layer was 3 nm.

Subsequently, when the resolution was evaluated in the same manner as in Example 1, a line having a dimension of 80 to 40 nm could be formed as the line pattern. In the 30 nm line pattern, thinness was confirmed in the line portion.
As a hole pattern, a hole pattern of 80 to 40 nm could be formed. In a pattern with a hole diameter of 30 nm, there was a region where the hole diameter was enlarged.
From this, it is considered that a resist pattern having a pattern dimension of about 40 nm can be formed by using a mask blank with a resist layer having the specifications according to the present embodiment. Further, it is considered that a resist pattern having a pattern dimension of less than 40 nm can be formed by correcting drawing conditions and the like.

  Subsequently, the mask blank with a resist layer on which the development accelerating layer was formed was subjected to drawing exposure with an electron beam of 50 kV and then subjected to a baking process (PEB: Post Exposure Bake) at 120 ° C. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the line portion was measured at a plurality of points, the average was 37.3 nm, and the thinning of the line portion could be suppressed to 7% or less. From this, it was found that a resist pattern with higher dimensional accuracy can be formed by slightly changing the drawing conditions.
Further, the amount of film bending of the resist pattern was 5 nm or less.

  Using this resist pattern as a mask, the light shielding film and the light semi-transmissive film were etched to produce a phase shift mask. The phase shift mask had a pattern formed with excellent transfer accuracy with respect to the resist pattern shape. .

(Example 3)
In this example, a mask blank with a resist layer was produced by the same method except that the baking temperature in the dissolution rate adjusting step in Example 1 was 155 ° C. for 10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developing solution (2.38% TMAH) was 0.01 nm / second, and the water contact angle was 72.3 °. The altered layer formed on the resist layer surface had a thickness of 1 nm.

Subsequently, when the resolution was evaluated in the same manner as in Example 1, lines could be formed in all line patterns of 80 nm to 30 nm.
Moreover, the hole pattern was able to form all the hole patterns of 80 nm-30 nm.
From this, it is considered that a resist pattern having a pattern dimension of 30 nm or less can be formed by using the mask blank with a resist layer having the specifications according to the present embodiment.

  Subsequently, drawing exposure with a 50 kV electron beam is performed on a mask blank with a resist layer similarly manufactured up to the development promoting layer forming step according to the present embodiment, and then a baking process (PEB: Post Exposure Bake) is performed at 120 ° C. went. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

Next, when the dimension of the line portion of the resist pattern was measured at a plurality of points, the average was 39.3 nm, and the thinning of the line portion could be suppressed to 2% or less. From this, it was found that a resist pattern with higher dimensional accuracy can be formed by slightly changing the drawing conditions.
Moreover, the amount of film bending of the resist pattern was 2 nm or less.

  Using this resist pattern as a mask, the light shielding film and the light semi-transmissive film were etched to produce a phase shift mask. As a result, a thin film pattern was formed on the phase shift mask with excellent transfer accuracy with respect to the resist pattern shape. .

(Example 4)
In this example, a hard mask film formed on the light shielding film of the mask blank produced in Example 2 was produced as a phase shift mask blank.
First, a hard mask film as an etching mask having a film thickness of 5 nm is formed on the light shielding film of the mask blank of Example 1 using a single-wafer DC sputtering apparatus, and a resist layer is formed on the hard mask film. A mask blank with a resist layer in this example was produced in the same manner as in Example 2 except that the thickness of the layer was 50 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.03 nm / second.

Note that the hard mask film uses a Si target and is a mixed gas atmosphere of argon (Ar), nitrogen (N ₂ ), and oxygen (O ₂ ) (Ar: N ₂ : O ₂ = 20: 57: 23 [volume%]. ), Reactive sputtering was performed to form a SiON film having a thickness of 5 nm.

  Next, drawing exposure with an electron beam of 50 kV was performed on the mask blank with a resist layer on which the same development promoting layer as in Example 1 was formed. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm.

  Thereafter, a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the line portion was measured at a plurality of points, the average was 37.2 nm, and the thinning of the line portion could be suppressed to 7% or less. From this, it was found that a resist pattern with higher dimensional accuracy can be formed by slightly changing the drawing conditions.
Further, the amount of film bending of the resist pattern was 5 nm or less.

  Subsequently, using this resist pattern as a mask, the hard mask film was etched, and using the etched hard mask film as a mask, the light shielding film and the light semi-transmissive film were etched to produce a phase shift mask. The pattern was formed with excellent transfer accuracy with respect to the resist pattern shape.

(Example 5)
In this example, a light-shielding film and a hard mask film formed on a substrate in this order were produced as a binary mask blank.

  First, a single-layer MoSiN film having a thickness of 50 nm was formed as a light-shielding film on a substrate made of synthetic quartz glass and having translucency using a single-wafer DC sputtering apparatus. The conditions at that time were as follows.

A mixed target (atomic% ratio Mo: Si = 21: 79) of molybdenum (Mo) and silicon (Si) is used as a sputtering target, and a mixed gas atmosphere of argon (Ar), nitrogen (N ₂ ), and helium (He) (Gas pressure 0.3 Pa, gas flow ratio Ar: N ₂ : He = 5: 49: 46) The power of the DC power source was 2.1 kW, and reactive sputtering (DC sputtering) was performed. After sputtering, a heat treatment (annealing treatment) was performed at 250 ° C. for 5 minutes.

Thereafter, a hard mask film made of CrOCN was formed on the light shielding film using a single wafer DC sputtering apparatus. Specifically, a chromium (Cr) target is used as a sputtering target, and a mixed gas atmosphere of argon (Ar), carbon dioxide (CO ₂ ), nitrogen (N ₂ ), and helium (He) (gas pressure 0.2 Pa, The gas flow rate ratio Ar: CO ₂ : N ₂ : He = 22: 39: 6: 33), the power of the DC power source was 1.7 kW, and a CrOCN layer having a thickness of 10 nm was formed by reactive sputtering (DC sputtering). Filmed.

  The mask blank in this example was manufactured through the above steps.

  A resist layer having a thickness of 50 nm was formed on the hard mask film of the obtained mask blank using the same positive resist as in Example 1 to produce a mask blank with a resist layer in this example. In addition, the baking process at the time of resist layer formation was 155 degreeC-10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.

  Next, drawing exposure with an electron beam of 50 kV was performed on the mask blank with a resist layer on which the same development promoting layer as in Example 1 was formed. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm.

  Thereafter, a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the line portion was measured at a plurality of points, the average was 39.2 nm, and the thinning of the line portion could be suppressed to 2% or less. From this, it has been found that according to the configuration of this example, a highly accurate resist pattern can be formed without changing the conditions such as drawing. Also, by slightly changing the drawing conditions. Furthermore, it is considered that a resist pattern with high dimensional accuracy can be formed.
Moreover, the amount of film bending of the resist pattern was 2 nm or less.

  Subsequently, using this resist pattern as a mask, the hard mask film was etched, and using the etched hard mask film as a mask, the light shielding film was etched to produce a photomask. The pattern was formed with accuracy.

(Example 6)
In this example, a light-shielding film and a surface antireflection film formed on a substrate were produced as a binary mask blank.

  First, a single-layer TaN film having a thickness of 42 nm was formed as a light-shielding film on a transparent substrate made of synthetic quartz glass using a single-wafer DC sputtering apparatus. The conditions at that time were as follows.

Using a target made of tantalum (Ta) as a sputtering target, a mixed gas atmosphere of xenon (Xe) and nitrogen (N ₂ ) (gas pressure 0.3 Pa, gas flow ratio Xe: N ₂ = 42: 58, The power was 2.8 kW and reactive sputtering (DC sputtering) was performed.

Thereafter, a TaO film having a thickness of 9 nm was formed as a surface antireflection film on the light shielding film made of TaN film by using a single-wafer DC sputtering apparatus. The composition of the TaO film was Ta: 48 atomic% and O: 52 atomic%. The conditions for forming the TaO film were as follows. A target made of tantalum (Ta) is used as a sputtering target, and a mixed gas atmosphere of argon (Ar) and oxygen (O ₂ ) (gas pressure 0.3 Pa, gas flow rate ratio Ar: O ₂ = 64: 36) is used. The power of the power source was 3.0 kW.

  The mask blank in this example was manufactured through the above steps.

  A resist layer having a thickness of 80 nm was formed on the antireflection film of the obtained mask blank using the same positive resist as in Example 1 to produce a mask blank with a resist layer in this example. In addition, the baking process at the time of resist layer formation was made into 140 degreeC-10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developing solution (2.38% TMAH) was 0.03 nm / second.

  Next, drawing exposure with an electron beam of 50 kV was performed on the mask blank with a resist layer on which the same development promoting layer as in Example 1 was formed. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm.

  Thereafter, a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the line portion was measured at a plurality of points, the average was 37.3 nm, and the thinning of the line portion could be suppressed to 7% or less. From this, it was found that a resist pattern with higher dimensional accuracy can be formed by slightly changing the drawing conditions.
Further, the amount of film bending of the resist pattern was 5 nm or less.

  Subsequently, using this resist pattern as a mask, the surface antireflection film was etched, and using the etched surface antireflection film as a mask, the light shielding film was etched to produce a photomask. The pattern was formed with high transfer accuracy.

(Example 7)
In this example, a hard mask film formed on the surface antireflection film of the mask blank produced in Example 6 was produced as a binary mask blank.

  A hard mask film as an etching mask having a film thickness of 4 nm is formed on the surface antireflection film of the mask blank of Example 6 using a single wafer DC sputtering apparatus, and a resist layer is formed on the hard mask film. A mask blank with a resist layer in this example was produced in the same manner as in Example 6 except that the thickness of the resist layer was 50 nm and the baking temperature before exposure drawing was 155 ° C.-10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.03 nm / second.

The composition of the hard mask film was Cr: 79 atomic% and N: 21 atomic%. The conditions for forming the hard mask film were as follows. Using a target made of chromium (Cr) as a sputtering target, a mixed gas atmosphere of argon (Ar) and nitrogen (N ₂ ) (gas pressure 0.1 Pa, gas flow ratio Ar: N ₂ = 83: 17), DC The power of the power source was 1.7 kW.

  Next, drawing exposure with an electron beam of 50 kV was performed on the mask blank with a resist layer on which the same development promoting layer as in Example 1 was formed. As the resist pattern, the width of the convex part (line) of the pattern was 40 nm, and the width of the concave part (space) of the pattern was 40 nm.

  Thereafter, a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the line portion was measured at a plurality of points, the average was 37.4 nm, and the thinning of the line portion could be suppressed to 7% or less. From this, it was found that a resist pattern with higher dimensional accuracy can be formed by slightly changing the drawing conditions.
Moreover, the film thickness of the resist pattern was 5 nm or less.

  Subsequently, using this resist pattern as a mask, the hard mask film was etched, and using the etched hard mask film as a mask, the light shielding film and the surface antireflection film were etched to produce a photomask. The pattern as designed was formed.

(Example 8)
In this example, a reflective mask blank was prepared by forming a multilayer reflective film, a protective film, an absorber film and a low reflective film in this order on a substrate.

First, on a substrate made of SiO ₂ —TiO ₂ glass, a multilayer reflective film having a total film thickness of 280 nm in which Mo films and Si films were alternately laminated was formed using an ion beam sputtering apparatus. The conditions at that time were as follows.

  A multilayer reflective film was formed on the glass substrate by ion beam sputtering. Specifically, using a Si target, a Si layer was formed as a low refractive index layer, and using a Mo target, a Mo layer was formed as a high refractive index layer, and this was laminated for 40 periods. . Finally, an Si layer was formed as a low refractive index layer using an Si target.

  Thereafter, a protective film was formed on the multilayer reflective film by DC magnetron sputtering. Specifically, a Ru film was formed using an Ru target in an atmosphere of argon gas (Ar).

Next, an absorber layer and a low reflection layer were laminated in that order on the protective film by DC magnetron sputtering to form an absorber film, thereby manufacturing a reflective mask blank. Specifically, using a TaB alloy target, an absorber layer TaBN layer is formed in a mixed gas atmosphere of xenon gas (Xe) and nitrogen gas (N ₂ ), and then argon gas (Ar) and oxygen gas ( A TaBO layer as a low reflection layer was formed in a mixed gas atmosphere of O ₂ ).

  The mask blank in this example was manufactured through the above steps.

  A resist layer having a thickness of 50 nm was formed on the surface of the obtained reflective mask blank using the same positive resist as in Example 1, and a mask blank with a resist layer in this example was produced. In addition, the baking process at the time of resist layer formation was 155 degreeC-10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.

  The mask blank with a resist layer on which the same development promoting layer as that of Example 1 was formed was subjected to drawing exposure with an electron beam of 50 kV, and then subjected to a baking process (PEB: Post Exposure Bake) at 120 ° C. As the resist pattern, the width of the convex part (line) of the pattern was 30 nm, and the width of the concave part (space) of the pattern was 30 nm. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

  When the dimension of the line portion was measured at a plurality of points, the average was 29.1 nm, and the thinning of the line portion could be suppressed to 3% or less.

From this, it was found that according to the present embodiment, a highly accurate resist pattern can be formed without changing the conditions such as drawing. Also, by slightly changing the drawing conditions. Furthermore, it is considered that a resist pattern with high dimensional accuracy can be formed.
Moreover, the film thickness of the resist pattern was 2 nm or less.

  Subsequently, using this resist pattern as a mask, the low reflective film was etched, and using the etched low reflective film as a mask, the absorber film was etched to produce a reflective mask. In the produced reflective mask, an absorber film pattern with good dimensional accuracy was formed.

Example 9
In the present example, an imprint mold blank was prepared by forming a hard mask film on a substrate.

First, a hard mask film was formed on a substrate made of synthetic quartz glass and having translucency using a single wafer DC sputtering apparatus. The composition of the hard mask film was Cr: 79 atomic% and N: 21 atomic%. The conditions for forming the hard mask film were as follows. A sputtering target is a chromium (Cr) target, and a mixed gas atmosphere of argon (Ar) and nitrogen (N ₂ ) (gas pressure 0.1 Pa, gas flow ratio Ar: N ₂ = 83: 17), DC power source Power of 1.7 kW.

  Through the above steps, a mold blank in this example was produced.

  A resist layer having a thickness of 50 nm was formed on the hard mask film of the obtained mold blank using the same positive resist as in Example 1, and a mold blank with a resist layer in this example was produced. In addition, the baking process at the time of resist layer formation was 155 degreeC-10 minutes. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.

  Thereafter, exposure and development were performed under the same conditions as in Example 1 to form a resist pattern. Although evaluation was performed on the formed resist pattern, thinning of the resist pattern and film slippage were suppressed.

  Subsequently, using this resist pattern as a mask, the hard mask film was etched, and using the etched hard mask film as a mask, the substrate was etched to produce a mold. The mold was superior to the resist pattern shape. A pattern was formed with transfer accuracy.

(Example 10)
In this example, a tritone transfer mask 12 was produced using the phase shift mask blank employed in Example 1. A specific configuration of the transfer mask 12 is shown in FIG. FIG. 9A is a schematic plan view of the tritone transfer mask 12 (tritone mask 20) in this embodiment, and FIG. 9B is a schematic cross-sectional view of the tritone mask 20. FIG. It is. The present embodiment is the same as that shown in FIGS. 7A to 7D and FIG. 8A.
The tritone mask 20 in this example is formed with a transmissive region 21 where the surface of the translucent substrate is exposed, a halftone region 22 including an exposed portion of the light semi-transmissive film, and the light semi-transmissive film and the light shielding film. And a light-shielding region 23 composed of regions.

  In the tritone mask 20 of this example, as shown in FIG. 9A, a pattern in which the formation pitch of the transmissive regions 21 is 150 nm and is arranged in a 3 × 3 lattice pattern is formed. The shape of the transmission region 21 was a square pattern of 50 nm × 50 nm. The transmissive region 21 is formed inside the halftone region 22, in other words, the halftone region 22 has a pattern that surrounds the transmissive region 21. The halftone region 22 was a square pattern having an outer shape of 100 nm × 100 nm.

  The tritone mask 20 of this example was manufactured by first forming the light shielding region 23 by forming the outer shape of the halftone region 22 and then forming the halftone region 22 and the transmission region 21.

<Formation of light shielding region 22>
First, the surface of the light-shielding film of the phase shift mask blank employed in Example 1 was spin-coated with a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials).
Next, in the dissolution rate adjusting step, the baking temperature was set to 155 ° C. for 10 minutes to produce a mask blank with a resist layer. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.

  The same development promoting layer as in Example 1 was formed on the surface of the resist layer, and drawing exposure with an electron beam of 50 kV was performed on the mask blank with the resist layer. Thereafter, a baking process (PEB: Post Exposure Bake) was performed at 120 ° C. As a resist pattern, a 100 nm × 100 nm square pattern was formed at a total of nine places in three rows vertically and horizontally at intervals of 50 nm. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

When the dimension of the light shielding region 23 (dimension of the line portion) between the adjacent halftone patterns 22 was measured, the average was 49.2 nm, and the thinning of the line portion could be suppressed to 2% or less. The film thickness of the resist pattern was 2 nm or less.
Using this resist pattern as a mask, the light shielding film was etched to form the outer shape of the halftone region 22, and the light shielding region 23 was formed.

<Formation of transmission region 21 pattern and halftone region 22 pattern>
Next, on the surface of the mask blank on which the light shielding region 23 is formed, a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials), is coated on the light shielding film region 23. The surface was spin-coated so as to have a thickness of 100 nm.
Next, the baking temperature in the dissolution rate adjusting step was set to 155 ° C. for 10 minutes to form a resist layer. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.

  Then, the same development promoting layer as in Example 1 was formed on the surface of the resist layer, and drawing exposure with an electron beam of 50 kV was performed on the mask blank with the resist layer. Then, the mask blank after drawing exposure was baked at 120 ° C. (PEB: Post Exposure Bake). As the resist pattern, a 50 nm × 50 nm square pattern was formed in the outer shape of the previously formed halftone region 22 so as to have the same center. Subsequently, development was performed for 60 seconds using 2.38% TMAH as a developer to form a resist pattern.

  The dimension of one side of the square of the space portion (transmission region 21 portion) of the formed resist pattern was 50.9 nm on average, and the space portion could be formed with an accurate dimension. Using this resist pattern as a mask, the light semi-transmissive film was dry-etched with a fluorine-based gas to form a transmissive region 21 and a halftone region 22.

  When the positional accuracy of the tritone mask 20 manufactured by the above method was confirmed, the deviations of the centers of the outer shapes of the transmission region 21 and the halftone region 22 were all 1 nm or less, and the tritone mask 20 having excellent positional accuracy was manufactured. We were able to.

(Comparative Example 1)
In Comparative Example 1, the phase shift mask blank produced in Example 1 was used. The light shielding film of the mask blank was subjected to HMDS treatment under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials) was spin-coated on the light shielding film.

  Then, the baking process was performed on the conditions for 125 degreeC-10 minutes using the heat drying apparatus. The film thickness of the resist layer was 100 nm. The mask blank with a resist layer in Comparative Example 1 was produced through the above steps. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.12 nm / second.

  Thereafter, when the resolution was evaluated by the same method as in Example 1, a line with a dimension of up to 50 nm could be formed as a line pattern, but an obvious thinning was confirmed. In addition, the collapse was confirmed in the 40 nm line pattern, and there was a disappeared portion in the 30 nm line pattern.

  Further, in the hole pattern, hole defects were confirmed in the hole patterns having a hole diameter of 30 nm and 40 nm. In addition, in the hole patterns with hole diameters of 70 nm and 80 nm, it was confirmed that the holes were connected to adjacent patterns.

  Subsequently, exposure and development are performed on the mask blank with a resist layer according to this comparative example so that the width of the convex portion (line) of the pattern is 40 nm and the width of the concave portion (space) of the pattern is 40 nm. Although a resist pattern was formed, the line and space pattern collapsed due to the large aspect ratio, and a predetermined resist pattern could not be formed.

(Comparative Example 2)
In Comparative Example 2, the phase shift mask blank produced in Example 1 was used. The light shielding film of the mask blank was subjected to HMDS treatment under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist for electron beam drawing (PRL009: manufactured by Fuji Film Electronics Materials) was spin-coated on the light shielding film.

Then, the baking process was performed on the conditions for 125 degreeC-10 minutes using the heat drying apparatus. The thickness of the resist layer was 80 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.12 nm / sec.
The mask blank with a resist layer in Comparative Example 2 was produced through the above steps.

  Thereafter, exposure and development were performed to form a resist pattern so that a 40 nm wide line and space pattern, a space pattern, and a hole pattern with a hole diameter of 40 nm were formed. At this time, although the fall of the line and space pattern was suppressed, since the resist pattern was dissolved by the developer, the resist pattern to be a mask disappeared when the light shielding film was etched, and the light shielding to be masked The film was etched, the thickness of the light shielding film was reduced, and the predetermined performance could not be exhibited.

(Comparative Example 3)
In Comparative Example 3, the phase shift mask blank produced in Example 3 was used. The light shielding film of the mask blank was subjected to HMDS treatment under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist PRL009 for electron beam drawing (manufactured by Fuji Film Electronics Materials Co., Ltd.) was spin-coated on the light shielding film.

Then, the baking process was performed on the conditions for 155 degreeC-10 minutes using the heat drying apparatus. The thickness of the resist layer was 80 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.01 nm / second.
The mask blank with a resist layer in Comparative Example 3 was produced through the above steps.

  Thereafter, exposure and development were performed to form a resist pattern so that a 40 nm wide line and space pattern, a space pattern, and a hole pattern were formed. At this time, dissolution of the resist pattern was suppressed, and T-top shapes were observed in the space pattern and the hole pattern. As a result, when the light shielding film was etched, the etching was hindered, and the pattern of the light shielding film was unresolved.

(Comparative Example 4)
In Comparative Example 4, the phase shift mask blank produced in Example 1 was used. The light shielding film of the mask blank was subjected to HMDS treatment under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist PRL009 for electron beam drawing (manufactured by Fuji Film Electronics Materials Co., Ltd.) was spin-coated on the light shielding film.

  Then, the baking process was performed on the conditions for 125 degreeC-10 minutes using the heat drying apparatus. The thickness of the resist layer was 50 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.12 nm / sec.

  Subsequently, a development accelerating layer was formed in the same manner as in Example 1. At this time, an altered layer was also formed. The mask blank with a resist layer in Comparative Example 4 was produced through the above steps.

  Thereafter, exposure and development were performed to form a resist pattern so that a 40 nm wide line and space pattern, a space pattern, and a hole pattern with a hole diameter of 40 nm were formed. At this time, the dissolution of the resist pattern by the developer progressed and became thin, so that the resist pattern to be a mask disappeared when the light shielding film was etched, the light shielding film to be masked was etched, and the light shielding film disappeared The line and space pattern was unresolved.

(Comparative Example 5)
In Comparative Example 5, the imprint mold blank produced in Example 9 was used.

  The hard mask film of the obtained mold blank was subjected to HMDS treatment under predetermined conditions. Thereafter, a positive resist, a chemically amplified resist PRL009 for electron beam drawing (manufactured by Fuji Film Electronics Materials Co., Ltd.) was spin-coated on the light shielding film.

  Then, the baking process was performed on condition of 135 degreeC-10 minutes using the heat drying apparatus. The thickness of the resist layer was 30 nm. The dissolution rate of the resist layer after the baking treatment with respect to the developer (2.38% TMAH) was 0.05 nm / second.

  Subsequently, a development accelerating layer was formed in the same manner as in Example 1. At this time, an altered layer was also formed. Through the above steps, an imprint mold blank with a resist layer in Comparative Example 5 was produced.

  Thereafter, exposure and development were performed to form a 30 nm-wide line and space, thereby forming a resist pattern. At this time, the dissolution of the resist pattern by the developing solution has progressed, so that the resist pattern to be a mask disappears when the hard mask film is etched, the hard mask film to be masked is etched, and the hard mask film disappears In the etching of the substrate, the line and space pattern was unresolved.

DESCRIPTION OF SYMBOLS 10 ... Mask blank with a resist layer 5 ... Mask blank 1 ... Substrate 2 ... Thin film 2a ... Light semi-transmissive film 2b ... Light shielding film
DESCRIPTION OF SYMBOLS 7 ... Resist layer 7a ... Exposed part 7b ... Unexposed part 7p ... Resist pattern 7 '... 2nd resist layer 7'p ... 2nd resist pattern 8 ... Alteration layer 9 ... Development promotion layer 12 ... Transfer mask 13 ... Imprint mold 20 Tritone mask 21 Transmission region 22 Halftone region 23 Shading region

Claims (19)

A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The resist layer has a thickness of 200 nm or less;
The dissolution rate of the unexposed portion of the resist layer in the aqueous developer is 0.05 nm / second or less,
A blank with a resist layer, wherein a development accelerating layer that triggers the aqueous developer to spread over at least an exposed portion of the resist layer is formed on the resist layer. A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The resist layer has a thickness of 200 nm or less;
The contact angle with respect to water on the surface of the unexposed portion of the resist layer is 66 ° or more,
A blank with a resist layer, characterized in that a development accelerating layer is formed on the resist layer as an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer.   The blank with a resist layer according to claim 1, wherein the development accelerating layer is water-soluble.   The blank with a resist layer according to any one of claims 1 to 3, wherein at least the surface of the exposed portion is altered in the resist layer by the development accelerating layer.   The blank with a resist layer according to claim 1, wherein the substrate has a thin film on a surface thereof, and the resist layer is formed on a surface of the thin film.   The blank with a resist layer according to claim 5, wherein the thin film further includes a hard mask film.   The blank with a resist layer according to claim 5 or 6, wherein the substrate is a translucent substrate having translucency for light having a wavelength of 200 nm or less, and the thin film has a light shielding film. A mask blank with a resist layer, which is a blank.   The blank with a resist layer according to claim 5 or 6 is a translucent substrate in which the substrate has translucency with respect to light having a wavelength of 200 nm or less, and the thin film has half of the light with wavelength of 200 nm or less. A mask blank with a resist layer, which is a halftone phase shift mask blank having a light-transmitting translucent film.   The blank with a resist layer according to claim 5 or 6, wherein the substrate is a low thermal expansion substrate, and the thin film is a reflective mask blank having at least a multilayer reflective film and an absorber film. Mask blank with resist layer.   The blank with a resist layer according to any one of claims 1 to 6, wherein the blank is an imprint mold blank. For a resist layer formed on a substrate and made of a positive resist material, the resist layer is baked to reduce the dissolution rate of the unexposed portion of the resist layer in an aqueous developer to 0.05 nm / A dissolution rate adjustment step of less than or equal to seconds,
A development promoting layer forming step of forming a development promoting layer on the resist layer, which is an opportunity to spread the aqueous developer on at least an exposed portion of the resist layer,
A method for producing a blank with a resist layer, wherein the resist layer has a thickness of 200 nm or less. A resist layer formed on a substrate and made of a positive resist material is baked on the resist layer so that the contact angle with water on the surface of the unexposed portion of the resist layer is 66 ° or more. A contact angle adjusting step to perform,
A development promoting layer forming step of forming a development promoting layer on the resist layer, which is an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer, and
A method for producing a blank with a resist layer, wherein the resist layer has a thickness of 200 nm or less. The method for producing a blank with a resist layer according to claim 11 or 12 , wherein the substrate has a thin film on a surface thereof, and the resist layer is formed on a surface of the thin film. And a step of forming a predetermined pattern on the resist layer provided blank was prepared by the method of any of claims 11 to 13,
The method for producing a transfer mask, wherein the blank with a resist layer is a mask blank with a resist layer. And a step of forming a predetermined pattern on the resist layer provided blank was prepared by the method of any of claims 11 to 13,
The method for producing an imprint mold, wherein the blank with a resist layer is a mold blank with a resist layer. A mask blank with a resist layer, comprising a substrate and a resist layer formed on the substrate and made of a positive resist material,
The thickness of the resist layer at the convex portion of the blank on which the predetermined concavo-convex pattern is formed is 200 nm or less,
The dissolution rate of the unexposed portion of the resist layer in the aqueous developer is 0.05 nm / second or less,
A mask blank with a resist layer, wherein a development accelerating layer that triggers the aqueous developer to spread over at least an exposed portion of the resist layer is formed on the resist layer. A blank with a resist layer having a substrate and a resist layer formed on the substrate and made of a positive resist material,
The thickness of the resist layer at the convex portion of the blank on which the predetermined concavo-convex pattern is formed is 200 nm or less,
The contact angle with respect to water on the surface of the unexposed portion of the resist layer is 66 ° or more,
A mask blank with a resist layer, characterized in that a development accelerating layer is formed on the resist layer as an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer. The resist layer formed on the outermost surface of the blank on which a predetermined uneven pattern is formed and made of a positive resist material is baked on the resist layer so that the resist layer is not exposed to an aqueous developer. A dissolution rate adjusting step in which the dissolution rate of the exposed area is 0.05 nm / second or less;
A development accelerating layer forming step of forming a development accelerating layer on the resist layer that triggers the aqueous developer to spread over at least the exposed portion of the resist layer;
Using the resist pattern formed from the resist layer as a mask, forming a second predetermined uneven pattern on the blank on which the predetermined uneven pattern is formed;
Have
A method for producing a transfer mask, wherein the thickness of the resist layer in the convex portion of the blank is 200 nm or less. The resist layer formed on the outermost surface of the blank on which a predetermined uneven pattern is formed and made of a positive type resist material is baked on the resist layer, whereby the surface of the unexposed portion of the resist layer A contact angle adjusting step in which the contact angle with respect to water is 66 ° or more;
A development accelerating layer forming step of forming a development accelerating layer on the resist layer, which is an opportunity to spread an aqueous developer on at least an exposed portion of the resist layer;
Using the resist pattern formed from the resist layer as a mask, forming a second predetermined uneven pattern on the blank on which the predetermined uneven pattern is formed;
Have
A method for producing a transfer mask, wherein the thickness of the resist layer in the convex portion of the blank is 200 nm or less.