SG10201907458SA - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
SG10201907458SA
SG10201907458SA SG10201907458SA SG10201907458SA SG10201907458SA SG 10201907458S A SG10201907458S A SG 10201907458SA SG 10201907458S A SG10201907458S A SG 10201907458SA SG 10201907458S A SG10201907458S A SG 10201907458SA SG 10201907458S A SG10201907458S A SG 10201907458SA
Authority
SG
Singapore
Prior art keywords
manufacturing
same
semiconductor device
semiconductor
Prior art date
Application number
SG10201907458SA
Inventor
Sanuki Tomoya
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Publication of SG10201907458SA publication Critical patent/SG10201907458SA/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • H—ELECTRICITY
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
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    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
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    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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SG10201907458SA 2019-03-04 2019-08-14 Semiconductor device and method of manufacturing the same SG10201907458SA (en)

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JP2019038710A JP2020145231A (en) 2019-03-04 2019-03-04 Semiconductor device and manufacturing method thereof

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US (3) US11127717B2 (en)
JP (1) JP2020145231A (en)
CN (1) CN111653575B (en)
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TW (1) TWI721511B (en)

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US11195820B2 (en) * 2020-03-03 2021-12-07 Sandisk Technologies Llc Semiconductor device including fractured semiconductor dies
KR20220129620A (en) * 2020-04-14 2022-09-23 양쯔 메모리 테크놀로지스 씨오., 엘티디. 3D Memory Device With Backside Interconnect Structures
KR20220021992A (en) * 2020-08-14 2022-02-23 삼성전자주식회사 Non-volatile memory device, operating method thereof, controller for controlling the same, and storage device having the same
JP2022041052A (en) * 2020-08-31 2022-03-11 キオクシア株式会社 Semiconductor device and method for manufacturing the same
JP2022044428A (en) * 2020-09-07 2022-03-17 キオクシア株式会社 Semiconductor storage device and method for manufacturing semiconductor storage device
US11508729B2 (en) 2020-09-24 2022-11-22 Nanya Technology Corporation Semiconductor die with decoupling capacitor and manufacturing method thereof
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