SG10202013142QA - Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor - Google Patents

Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor

Info

Publication number
SG10202013142QA
SG10202013142QA SG10202013142QA SG10202013142QA SG10202013142QA SG 10202013142Q A SG10202013142Q A SG 10202013142QA SG 10202013142Q A SG10202013142Q A SG 10202013142QA SG 10202013142Q A SG10202013142Q A SG 10202013142QA SG 10202013142Q A SG10202013142Q A SG 10202013142QA
Authority
SG
Singapore
Prior art keywords
manufacturing
method therefor
deposition layer
sic deposition
parts
Prior art date
Application number
SG10202013142QA
Inventor
Joung Il Kim
Ki Won Kim
Jong Hyun Kim
Original Assignee
Tokai Carbon Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Korea Co Ltd filed Critical Tokai Carbon Korea Co Ltd
Publication of SG10202013142QA publication Critical patent/SG10202013142QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
SG10202013142QA 2016-12-20 2017-12-18 Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor SG10202013142QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20160174856 2016-12-20
KR1020170170791A KR102051668B1 (en) 2016-12-20 2017-12-12 A PART FOR SEMICONDUCTOR MANUFACTORING WITH SiC DEPOSITION LAYER AND MANUFACTORING METHOD THE SAME

Publications (1)

Publication Number Publication Date
SG10202013142QA true SG10202013142QA (en) 2021-02-25

Family

ID=62780332

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202013142QA SG10202013142QA (en) 2016-12-20 2017-12-18 Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor

Country Status (6)

Country Link
US (1) US11694893B2 (en)
JP (1) JP6995856B2 (en)
KR (2) KR102051668B1 (en)
CN (1) CN110050326B (en)
SG (1) SG10202013142QA (en)
TW (1) TWI667364B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102096787B1 (en) * 2019-06-11 2020-04-03 주식회사 바이테크 Manufacturing method for multilayered polycrystalline silicon carbide parts
KR102360676B1 (en) * 2020-02-04 2022-02-11 주식회사 케이엔제이 Manufacturing method of part including silicon carbide layer
KR102201523B1 (en) * 2020-07-02 2021-01-13 주식회사 티씨케이 A part for semiconductor manufacturing with plasma resistant member and method for manufacturing thereof
US11827999B2 (en) 2021-01-12 2023-11-28 Applied Materials, Inc. Methods of forming silicon carbide coated base substrates at multiple temperatures
KR102642090B1 (en) 2021-08-24 2024-02-29 주식회사 케이엔제이 Support socket and method for manufacturing a part including a deposition layer

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2566796B2 (en) * 1987-11-11 1996-12-25 東芝セラミックス株式会社 Vapor phase growth equipment
JP3218092B2 (en) * 1992-07-28 2001-10-15 東海カーボン株式会社 Method for producing oxidation resistant C / C composite
JP3422515B2 (en) * 1993-03-08 2003-06-30 東海カーボン株式会社 Method for forming oxidation-resistant coating on carbonaceous substrate
JPH0758029A (en) * 1993-08-16 1995-03-03 Sumitomo Metal Ind Ltd Susceptor
FR2712285B1 (en) * 1993-11-12 1995-12-22 Lorraine Carbone Surface treatment of carbon material to adhere a subsequent deposit of diamond and diamond coated parts obtained.
SE509984C2 (en) * 1994-03-18 1999-03-29 Sandvik Ab Charging system for CVD
JPH10209061A (en) * 1997-01-16 1998-08-07 Tokai Carbon Co Ltd Constitution member for semiconductor diffusion furnace
JP3929140B2 (en) 1997-10-27 2007-06-13 日本碍子株式会社 Corrosion resistant member and manufacturing method thereof
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
JP2001199791A (en) * 2000-01-11 2001-07-24 Applied Materials Japan Inc Heat treatment device and lift member therefor
JP4453140B2 (en) 2000-01-20 2010-04-21 イビデン株式会社 Semiconductor manufacturing equipment parts and semiconductor manufacturing equipment
JP4556090B2 (en) * 2001-07-31 2010-10-06 東海カーボン株式会社 Member for silicon carbide semiconductor manufacturing apparatus and method for manufacturing the same
JP3845563B2 (en) * 2001-09-10 2006-11-15 株式会社東芝 Silicon carbide film CVD method, CVD apparatus, and susceptor for CVD apparatus
JP4007598B2 (en) * 2003-03-27 2007-11-14 コバレントマテリアル株式会社 Susceptor and manufacturing method thereof
CN103556209B (en) * 2005-01-24 2018-11-09 坦塔莱恩化学气相沉积控股有限公司 The method of coat objects
JP2007149771A (en) * 2005-11-24 2007-06-14 Sharp Corp Semiconductor manufacturing apparatus
JP2008027781A (en) * 2006-07-24 2008-02-07 Sumitomo Electric Ind Ltd Diamond electron emitting element, and its manufacturing method
JP5051909B2 (en) * 2007-03-30 2012-10-17 コバレントマテリアル株式会社 Vertical wafer boat
US20090314211A1 (en) * 2008-06-24 2009-12-24 Applied Materials, Inc. Big foot lift pin
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
SG170717A1 (en) 2009-11-02 2011-05-30 Lam Res Corp Hot edge ring with sloped upper surface
JP4850960B2 (en) * 2010-04-07 2012-01-11 新日本製鐵株式会社 Epitaxial silicon carbide single crystal substrate manufacturing method
JP4956649B2 (en) * 2010-07-06 2012-06-20 三井造船株式会社 Silicon carbide substrate, semiconductor device and SOI wafer
JP5787558B2 (en) * 2011-03-08 2015-09-30 イビデン株式会社 Ceramic substrate support and method for manufacturing ceramic member
KR101337338B1 (en) * 2011-11-04 2013-12-06 주식회사 티씨케이 Method for relieve stress of SiC and improving method for susceptor
KR101158343B1 (en) * 2011-12-29 2012-06-22 주식회사 티씨케이 Silicon carbide structure and manufacturing method thereof
US9099514B2 (en) * 2012-03-21 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer holder with tapered region
JP6196246B2 (en) 2013-02-06 2017-09-13 東洋炭素株式会社 Silicon carbide-tantalum carbide composite and susceptor
CN105264653B (en) * 2013-06-06 2018-02-16 揖斐电株式会社 Chip carrier and the epitaxial growth device using the chip carrier
KR101593922B1 (en) 2014-12-30 2016-02-15 하나머티리얼즈(주) Polycrystal silicon carbide bulky part for a semiconductor process by chemical vapor deposition and preparation method thereof
KR101593921B1 (en) 2015-06-30 2016-02-15 하나머티리얼즈(주) Recycle method of silicon carbide parts for semiconductor plasma apparatus and recycled silicon carbide thereby
CN108140606B (en) * 2015-10-21 2022-05-24 住友大阪水泥股份有限公司 Electrostatic chuck device
KR101628689B1 (en) 2016-01-29 2016-06-09 하나머티리얼즈(주) Silicon carbide parts for plasma apparatus and manufacturing method thereof
US10262887B2 (en) * 2016-10-20 2019-04-16 Lam Research Corporation Pin lifter assembly with small gap

Also Published As

Publication number Publication date
JP2020502806A (en) 2020-01-23
TW201829826A (en) 2018-08-16
CN110050326A (en) 2019-07-23
KR20190137736A (en) 2019-12-11
CN110050326B (en) 2023-07-18
US20200066514A1 (en) 2020-02-27
KR20180071952A (en) 2018-06-28
US11694893B2 (en) 2023-07-04
KR102051668B1 (en) 2019-12-04
TWI667364B (en) 2019-08-01
JP6995856B2 (en) 2022-01-17

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