JP6995856B2 - SiC蒸着層を含む半導体製造用部品及びその製造方法 - Google Patents
SiC蒸着層を含む半導体製造用部品及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 42
- 238000000427 thin-film deposition Methods 0.000 title claims description 23
- 239000000463 material Substances 0.000 claims description 79
- 238000007740 vapor deposition Methods 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 26
- 239000010953 base metal Substances 0.000 claims description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 88
- 238000001312 dry etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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Description
Claims (13)
- 母材と、
前記母材の表面に形成されたSiC蒸着層と、
を含み、
前記母材及びSiC蒸着層の厚さの比は1:1ないし100:1であり、
前記母材は、段差をもって形成された階段式の構造を一面に含み、
前記階段式の構造の断面視にて、前記段差に係る2つの面の間には、曲面が形成され、又は、前記2つの面夫々と鈍角をなす平面が形成されており、
前記母材の前記一面に形成されたSiC蒸着層の厚さは、前記一面と反対側の面に形成されたSiC蒸着層の厚さの1.5倍~3倍であり、
前記一面のSiC蒸着層の厚さは、前記反対側の面のSiC蒸着層の厚さよりも厚い、SiC蒸着層を含む半導体製造用部品。 - 母材と、
前記母材の表面に形成されたSiC蒸着層と、
を含み、
前記母材及びSiC蒸着層の厚さの比は1:1ないし100:1であり、
前記母材は、扁平な一面と、該一面と反対側に、前記一面と平行な平行面と、前記一面に垂直な垂直面とを有する階段式の構造を含み、
前記階段式の構造の断面視にて、前記平行面及び前記垂直面の間には、曲面が形成され、又は、前記平行面及び前記垂直面と鈍角をなす平面が形成されており、
前記母材の前記平行面及び前記垂直面に均一に形成されたSiC蒸着層の厚さは、前記母材の前記一面に均一に形成されたSiC蒸着層の厚さの1.5倍~3倍であり、
前記平行面及び前記垂直面のSiC蒸着層の厚さは、前記一面のSiC蒸着層の厚さよりも厚い、SiC蒸着層を含む半導体製造用部品。 - 前記母材は、グラファイト、反応焼結SiC、常圧焼結SiC、ホットプレスSiC、再結晶SiC及び、CVD SiCからなる群より選択される少なくともいずれか1つを含む、請求項1又は2に記載のSiC蒸着層を含む半導体製造用部品。
- 前記SiC蒸着層の厚さは、2mm~20mmである、請求項1又は2に記載のSiC蒸着層を含む半導体製造用部品。
- 前記SiC蒸着層は複数の層を含む、請求項1又は2に記載のSiC蒸着層を含む半導体製造用部品。
- グラファイト、反応焼結SiC、常圧焼結SiC、ホットプレスSiC、再結晶SiC、及びCVD SiCからなる群より選択される少なくともいずれか1つを含む半導体製品材である母材を備えるステップと、
前記母材上にSiC蒸着層を形成するステップと、を含み、
前記母材はジグ上に装着され、前記SiC蒸着層が形成される前記母材の一面が前記ジグの端面と接し、前記ジグはテーパされた形状をもって前記端面に至るまで幅が増加し、
前記母材の前記一面と、前記ジグにおける前記端面に隣り合うテーパされた面との間は鈍角である、SiC蒸着層を含む半導体製造用部品の製造方法。 - 前記母材及び前記SiC蒸着層の厚さの比は1:1ないし100:1である、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップはCVD法に基づく、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、1000℃~1900℃の温度で行われる、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、蒸着開始時の温度よりも蒸着終了時の温度がさらに高い条件で行われる、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、前記SiC蒸着層を形成する間に順次温度を上昇しながら実行する、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは複数回行われる、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップ後に1500℃~2000℃で熱処理する残留応力解消ステップをさらに含む、請求項6に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
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KR10-2016-0174856 | 2016-12-20 | ||
KR20160174856 | 2016-12-20 | ||
KR1020170170791A KR102051668B1 (ko) | 2016-12-20 | 2017-12-12 | SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
KR10-2017-0170791 | 2017-12-12 | ||
PCT/KR2017/014907 WO2018117559A1 (ko) | 2016-12-20 | 2017-12-18 | Sic 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
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US11827999B2 (en) | 2021-01-12 | 2023-11-28 | Applied Materials, Inc. | Methods of forming silicon carbide coated base substrates at multiple temperatures |
KR102642090B1 (ko) | 2021-08-24 | 2024-02-29 | 주식회사 케이엔제이 | 지지 소켓 및 증착층을 포함하는 부품 제조 방법 |
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KR101593921B1 (ko) | 2015-06-30 | 2016-02-15 | 하나머티리얼즈(주) | 반도체 공정용 플라즈마 처리 장치용 탄화규소 부품의 재생 방법 및 이러한 방법으로 재생된 탄화규소 부품 |
WO2017069238A1 (ja) * | 2015-10-21 | 2017-04-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
KR101628689B1 (ko) | 2016-01-29 | 2016-06-09 | 하나머티리얼즈(주) | 플라즈마 처리 장치용 탄화규소 부품 및 이의 제조방법 |
US10262887B2 (en) * | 2016-10-20 | 2019-04-16 | Lam Research Corporation | Pin lifter assembly with small gap |
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2017
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- 2017-12-18 JP JP2019532781A patent/JP6995856B2/ja active Active
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JP2001199791A (ja) | 2000-01-11 | 2001-07-24 | Applied Materials Japan Inc | 熱処理装置および熱処理装置用リフト部材 |
JP2004296778A (ja) | 2003-03-27 | 2004-10-21 | Toshiba Ceramics Co Ltd | サセプタおよびその製造方法 |
JP2008277781A (ja) | 2007-03-30 | 2008-11-13 | Covalent Materials Corp | 縦型ウエハボート |
WO2014196323A1 (ja) | 2013-06-06 | 2014-12-11 | イビデン株式会社 | ウエハキャリアおよびこれを用いたエピタキシャル成長装置 |
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KR20190137736A (ko) | 2019-12-11 |
CN110050326A (zh) | 2019-07-23 |
KR102051668B1 (ko) | 2019-12-04 |
TW201829826A (zh) | 2018-08-16 |
TWI667364B (zh) | 2019-08-01 |
KR20180071952A (ko) | 2018-06-28 |
US20200066514A1 (en) | 2020-02-27 |
JP2020502806A (ja) | 2020-01-23 |
US11694893B2 (en) | 2023-07-04 |
CN110050326B (zh) | 2023-07-18 |
SG10202013142QA (en) | 2021-02-25 |
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