JP6630025B1 - 半導体製造用部品、複合体コーティング層を含む半導体製造用部品及びその製造方法 - Google Patents
半導体製造用部品、複合体コーティング層を含む半導体製造用部品及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 239000002131 composite material Substances 0.000 title claims abstract description 80
- 239000011247 coating layer Substances 0.000 title claims description 41
- 239000002243 precursor Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000002296 pyrolytic carbon Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 18
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
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Abstract
Description
半導体製品を生産するための乾式エッチング装置内で、8000Wのプラズマパワーを加えてCの原子比の増加による半導体製品のプラズマエッチング比率を確認する実験を行った。
Claims (15)
- SiC及びCを含む複合体を含み、
前記複合体のうちSi:Cの原子比は、1:1.1〜1:1.3である半導体製造用部品。 - 前記半導体製造用部品は、フォーカスリング、電極部、及びコンダクターからなる群より選択される少なくともいずれか1つを含むプラズマ処理装置部品である、請求項1に記載の半導体製造用部品。
- 前記複合体のうち前記Cは、前記SiCの間に存在する、請求項1に記載の半導体製造用部品。
- 前記複合体のうち前記Cは、熱分解炭素として存在する、請求項1に記載の半導体製造用部品。
- 半導体製造用部品と、
前記半導体製造用部品の少なくとも一面に形成されたSiC及びCを含む複合体コーティング層と、
を含み、
前記複合体のうちSi:Cの原子比は、1:1.1〜1:1.3である、複合体コーティング層を含む半導体製造部品。 - 前記半導体製造用部品は、グラファイト、SiC又はこの2つを含む、請求項5に記載の複合体コーティング層を含む半導体製造部品。
- 前記複合体コーティング層を含む半導体製造用部品は、フォーカスリング、電極部、及びコンダクターからなる群より選択される少なくともいずれか1つを含むプラズマ処理装置部品である、請求項5に記載の複合体コーティング層を含む半導体製造部品。
- 前記複合体コーティング層の平均的な厚さは、1mm〜3mmである、請求項5に記載の複合体コーティング層を含む半導体製造部品。
- グラファイト、SiC又はこの2つを含む母材に、Si前駆体及びC前駆体ソースを用いた化学的気相蒸着法によってSiC及びCを含む複合体を形成するステップを含み、前記複合体のうちSi:Cの原子比は、1:1.1〜1:1.3である、半導体製造用部品の製造方法。
- 前記SiC及びCを含む複合体を形成するステップは、1000℃〜1900℃の温度で行われる、請求項9に記載の半導体製造用部品の製造方法。
- 前記SiC及びCを含む複合体を形成するステップの前に、Si前駆体及びC前駆体を混合するステップを含む、請求項9に記載の半導体製造用部品の製造方法。
- 半導体製造用部品を備えるステップと、
前記半導体製造用部品の少なくとも一面にSi前駆体及びC前駆体を用いて化学的気相蒸着法によってSiC及びCを含む複合体コーティング層を形成するステップと、
を含み、前記複合体のうちSi:Cの原子比は、1:1.1〜1:1.3である、複合体コーティング層を含む半導体製造用部品の製造方法。 - 前記半導体製造用部品は、グラファイト、SiC又はこの2つを含む、請求項12に記載の複合体コーティング層を含む半導体製造用部品の製造方法。
- 前記SiC及びCを含む複合体コーティング層を形成するステップは、1000℃〜1900℃の温度で行われる、請求項12に記載の複合体コーティング層を含む半導体製造用部品の製造方法。
- 前記SiC及びCを含む複合体コーティング層を形成するステップの前に、Si前駆体及びC前駆体を混合するステップを含む、請求項12に記載の複合体コーティング層を含む半導体製造用部品の製造方法。
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Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900668A (en) * | 1971-07-09 | 1975-08-19 | Atlantic Res Corp | Internal components for gas turbines of pyrolytic graphite silicon carbide codeposit |
JPS59128281A (ja) * | 1982-12-29 | 1984-07-24 | 信越化学工業株式会社 | 炭化けい素被覆物の製造方法 |
JPS6232157A (ja) * | 1985-08-02 | 1987-02-12 | Yoshio Ichikawa | コ−テイング用組成物 |
JPH03159977A (ja) * | 1989-11-16 | 1991-07-09 | Idemitsu Petrochem Co Ltd | ダイヤモンド類被覆部材 |
US5190631A (en) * | 1991-01-09 | 1993-03-02 | The Carborundum Company | Process for forming transparent silicon carbide films |
US5580834A (en) * | 1993-02-10 | 1996-12-03 | The Morgan Crucible Company Plc | Self-sintered silicon carbide/carbon graphite composite material having interconnected pores which may be impregnated and raw batch and process for producing same |
CA2180665A1 (en) * | 1994-01-21 | 1995-07-27 | Irving B. Ruppel | Silicon carbide sputtering target |
JPH10209061A (ja) * | 1997-01-16 | 1998-08-07 | Tokai Carbon Co Ltd | 半導体拡散炉用の構成部材 |
US6162543A (en) * | 1998-12-11 | 2000-12-19 | Saint-Gobain Industrial Ceramics, Inc. | High purity siliconized silicon carbide having high thermal shock resistance |
TWI232891B (en) * | 1999-08-02 | 2005-05-21 | Tokyo Electron Ltd | SiC material, semiconductor device fabricating system and SiC material forming method |
JP4786782B2 (ja) | 1999-08-02 | 2011-10-05 | 東京エレクトロン株式会社 | 耐食性に優れたCVD−SiCおよびそれを用いた耐食性部材、ならびに処理装置 |
JP2001048667A (ja) * | 1999-08-13 | 2001-02-20 | Asahi Glass Co Ltd | セラミックス部品の接合方法 |
US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
JP2002356387A (ja) * | 2001-03-30 | 2002-12-13 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材 |
US6716800B2 (en) * | 2002-04-12 | 2004-04-06 | John Crane Inc. | Composite body of silicon carbide and binderless carbon, process for producing such composite body, and article of manufacturing utilizing such composite body for tribological applications |
CN1295191C (zh) * | 2004-01-09 | 2007-01-17 | 谭毅 | 一种简单的碳/碳化硅复合材料制造方法 |
US7799375B2 (en) * | 2004-06-30 | 2010-09-21 | Poco Graphite, Inc. | Process for the manufacturing of dense silicon carbide |
JP2006294671A (ja) | 2005-04-06 | 2006-10-26 | Mitsui Chemicals Inc | 低誘電率炭化珪素膜の製造方法 |
US20070054103A1 (en) * | 2005-09-07 | 2007-03-08 | General Electric Company | Methods and apparatus for forming a composite protection layer |
JP2007230820A (ja) * | 2006-02-28 | 2007-09-13 | Taiko Rozai Kk | 炭化珪素複合焼結体及びその製造方法 |
EP2122007A4 (en) * | 2007-02-27 | 2011-10-26 | Sixtron Advanced Materials Inc | METHOD FOR FORMING A FILM ON A SUBSTRATE |
DE102009002129A1 (de) * | 2009-04-02 | 2010-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper |
KR101139910B1 (ko) * | 2009-09-09 | 2012-04-30 | 주식회사 티씨케이 | 실리콘 카바이드 복합체 및 그 제조방법 |
JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
CN102718535A (zh) * | 2012-07-05 | 2012-10-10 | 湖南金博复合材料科技有限公司 | 碳/碳/碳化硅复合材料及制备方法 |
KR101469713B1 (ko) * | 2012-12-06 | 2014-12-05 | 연세대학교 산학협력단 | 경사형 C/SiC 코팅막 형성 방법 및 장치 |
KR101447006B1 (ko) * | 2012-12-10 | 2014-10-07 | 주식회사 티씨케이 | 플라즈마 처리장치의 실리콘 카바이드 구조물 |
KR101547621B1 (ko) * | 2013-10-17 | 2015-08-27 | 주식회사 티씨케이 | 플라즈마 처리장치의 실리콘 카바이드 구조물 및 그 제조방법 |
KR20160137746A (ko) * | 2015-05-20 | 2016-12-01 | 삼성전자주식회사 | 기판 제조 장치, 및 그의 탄소 보호막 코팅 방법 |
US11117806B2 (en) * | 2015-08-20 | 2021-09-14 | Entegris, Inc. | Silicon carbide/graphite composite and articles and assemblies comprising same |
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