CN110062951A - 半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法 - Google Patents

半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法 Download PDF

Info

Publication number
CN110062951A
CN110062951A CN201780076289.7A CN201780076289A CN110062951A CN 110062951 A CN110062951 A CN 110062951A CN 201780076289 A CN201780076289 A CN 201780076289A CN 110062951 A CN110062951 A CN 110062951A
Authority
CN
China
Prior art keywords
complex
semiconductors manufacture
sic
manufacture component
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201780076289.7A
Other languages
English (en)
Other versions
CN110062951B (zh
Inventor
金桢一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Donghai Carbon Co Ltd
Tokai Carbon Korea Co Ltd
Original Assignee
Korea Donghai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=62626774&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN110062951(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Korea Donghai Carbon Co Ltd filed Critical Korea Donghai Carbon Co Ltd
Publication of CN110062951A publication Critical patent/CN110062951A/zh
Application granted granted Critical
Publication of CN110062951B publication Critical patent/CN110062951B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/10—Ion sources; Ion guns
    • H01J49/105—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation, Inductively Coupled Plasma [ICP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Abstract

根据本发明的一实施例，本发明提供具有包含SiC及C的复合体，在上述复合体中，Si:C原子比例为1:1.1至1:2.8的半导体制造用部件。

Description

半导体制造用部件、包括复合体涂层的半导体制造用部件及 其制造方法
技术领域
本发明涉及在干式蚀刻工序中，利用晶片(Wafer)等的基板来制造半导体组件的半导体制造用部件，包括复合体涂层的半导体制造用部件及其制造方法，更详细地，具有包含SiC及C的复合体的半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法。
背景技术
通常，作为在半导体制造工序中使用的等离子处理工法、干式蚀刻工序中的一种，使用气体来对目标进行蚀刻的方法。向反应容器内注入蚀刻气体并进行离子化之后，向晶片表面加速，来以物理、化学去除晶片表面的工序。上述方法中，蚀刻的调节简单，生产性高，可形成数十nm水平的微细图案，从而广泛使用。
为了在等离子蚀刻中的均匀的蚀刻而需要考虑的参数(parameter)，需要蚀刻的层的厚度和密度、蚀刻气体的能量及温度、光刻胶的粘结性和晶片表面的状态及蚀刻气体的均匀性等。尤其，使蚀刻气体离子化，使离子化的蚀刻气体在晶片表面加速来执行蚀刻的原动力的高频(RF，Radio frequency)的调节可成为重要参数，并且，在实际蚀刻过程中，需要考虑直接切简单进行调节的参数。
但是，实际上，干式蚀刻装置内，以进行蚀刻的晶片为基准，需要适用具有对于晶片表面整体的均匀能量分布的均匀高频的适用，当适用这种高频时的均匀能量分布的适用无法仅通过高频的输出调节实现，为了解决这个问题，通过作为用于向晶片施加高频的高频电极的阶段和阳极氧化聚焦环的形状的半导体制造用部件来实现。
如上所述，为了延长设置于等离子蚀刻装置内的半导体制造用部件的寿命，代替Si材质，进行着对于制造SiC材质的聚焦环或电极等的部件的方法的研究。即便如此，若绝大多数的SiC材质的半导体制造用部件经过一段时间，则向等离子露出并被磨损，从而导致频频进行交替的问题。这会提高产品的生产成本，并降低市场性。因此，为了减少SiC材质部件的交替，进行着用于耐等离子性提高的多级研究。
发明内容
技术问题
本发明的目的在于解决上述问题，本发明的目的在于，提供作为一例，具有包含SiC及C的复合体，在上述复合体中，调节Si:C原子比例，由此，确保更加优秀的耐等离子型的半导体制造用部件，包括复合体涂层的半导体制造用部件及其制造方法。
但是，本发明所要解决的问题并不局限于上述提及的问题，本发明所属技术领域的普通技术人员可从以下的记载明确理解未提及的其他问题。
技术手段
根据本发明的一实施例，本发明提供如下的半导体制造用部件，即，具有包含SiC及C的复合体，在上述复合体中，Si:C原子比例为1:1.1至1:2.8。
根据本发明的一实施例，在上述复合体中，Si:C原子比例为1:1.1至1:1.3。
根据本发明的一实施例，上述半导体制造用部件为包括选自聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。
根据本发明的一实施例，上述C存在于上述SiC之间。
根据本发明的一实施例，在上述复合体中，上述C为热分解碳。
根据本发明的一实施例，本发明提供包括复合体涂层的半导体制造用部件，上述包括复合体涂层的半导体制造用部件包括：半导体制造用部件；以及包含SiC及C的复合体涂层，形成于上述半导体制造用部件的至少一面，在上述复合体中，Si:C原子比例为1:1.1至1:2.8。
根据本发明的一实施例，在上述复合体中，Si:C原子比例为1:1.1至1:1.3。
根据本发明的一实施例，上述半导体制造用部件包含石墨、SiC或同时包含两者。
根据本发明的一实施例，上述包括复合体涂层的半导体制造用部件为包括选自聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。
根据本发明的一实施例，上述复合体涂层的平均厚度为1㎜至3㎜。
根据本发明的另一实施例，本发明提供半导体制造用部件的制造方法，上述半导体制造用部件的制造方法包括通过利用Si前体源及C前体源的化学气相蒸镀法来在包含石墨、SiC或同时包含两者的母材形成包含SiC及C的复合体的步骤。
根据本发明的一实施例，形成上述包含SiC及C的复合体的步骤在1000℃至1900℃的温度下执行。
根据本发明的一实施例，在形成上述包含SiC及C的复合体的步骤之前，包括混合Si前体及C前体的步骤。
根据本发明的另一实施例，本发明提供包括复合体涂层的半导体制造用部件的制造方法，上述包括复合体涂层的半导体制造用部件的制造方法包括：准备半导体制造用部件的步骤；以及通过利用Si前体及C前体的化学气相蒸镀法，在上述半导体制造用部件的至少一面形成包含SiC及C的复合体涂层的步骤。
根据本发明的一实施例，上述半导体制造用部件包含石墨、SiC或同时包含两者。
根据本发明的一实施例，形成上述包含SiC及C的复合体涂层的步骤在1000℃至1900℃的温度下执行。
根据本发明的一实施例，在形成上述包含SiC及C的复合体涂层的步骤之前，包括混合Si前体及C前体的步骤。
发明效果
本发明一实施例的半导体制造用部件及包括复合体涂层的半导体制造用部件具有如下效果，即，与以往的SiC材料相比，耐等离子特性得到改善。由此，在干式蚀刻装置内，增加在等离子环境中体现的半导体制造用部件的寿命来减少基于频频交替的费用增加，并可提高产品制造工序的生产性。
附图说明
图1为本发明一实施例的半导体制造用部件中的一个聚焦环的剖视图。
图2为本发明一实施例的包括复合体涂层的半导体制造用部件的剖视图。
图3为示出相比于Si，所添加的C含量的等离子环境中的蚀刻率的图表。
图4a为本发明一实施例的半导体制造用部件中，相比于Si，C含量为1.1时的XRD分析图表。
图4b为本发明一实施例的半导体制造用部件中，相比于Si，C含量为1.2时的XRD分析图表。
图4c为本发明一实施例的半导体制造用部件中，相比于Si，C含量为1.3时的XRD分析图表。
具体实施方式
以下，参照附图，详细说明本发明的半导体制造用部件，包括复合体涂层的半导体制造用部件及其制造方法的实施例。
在各个附图中提出的相同的附图标记为相同的部件。以下说明的实施例及附图可具有多种变更。并且，与附图标记无关，对相同结构要素赋予相同的附图标记，并省略对其的重复说明。以下说明的实施例并非限定实施形态，而是包括对于这些的所有变更、等同技术方案或代替技术方案。在说明本发明的过程中，在判断对于相关的公知功能或结构的具体说明使本发明的主旨不清楚的情况下，将省略对其的详细说明。
并且，在本说明书中使用的术语为用于适当表现本发明的优选实施例的而使用的术语，这可根据使用人员、运营人员的意图或本发明所属技术领域的惯例等改变。因此，对于本术语的定义需要以本说明书整体的内容来下达。各个附图中提出的相同附图标记表示相同部件。
在说明书整体中，当一个部件位于其他部件的“上部”时，不仅是一个部件与其他部件相接的情况，而且还包括两个部件之间存在其他部件的情况下。
在说明书整体中，当一个部件“包括”其他结构要素时，只要没有特殊反对的记载，意味着还可包括其他结构要素，而并非意味着排除其他结构要素。
只要并未明确定义，包括技术或科学术语，在此使用的所有术语具有与本发明所属技术领域的普通技术人员一般理解的含义相同的含义。与一般使用的预先定义的相同术语具有在相关技术文脉上具有的含义相同的含义，只要在本申请中并未明确定义，不能被解释成异常或过度形式。
根据本发明的一实施例，具有包含SiC及C的复合体，在上述复合体中，Si:C原子比例为1:1.1至1:2.8的半导体制造用部件。通常的耐等离子型材料的SiC材料的Si:C的原子比例为1:1。但是，在本发明一实施例中提供的包含SiC及C的复合体的上述Si:C的比例为1:1.1至1:2.8。在上述Si:C原子比例小于1:1.1的情况下，还包含C，由此，不会呈现出耐等离子特性改善效果，在上述Si:C原子比例大于1:2.8的情况下，可发生剥离。
根据本发明的一例，在上述复合体中，Si:C原子比例为1:1.1至1:1.3。当上述原子比例为1:1.1至1:1.3时，与SiC材料相比，耐等离子特性进一步得到改善。此时，以SiC 1为基准，包含1.1以上的原子比例的C原子向具有优秀耐等离子特性的SiC粒子之间填充，来进行用于形成包含SiC及C的复合体的物理结合。并且，在上述复合体中，优选地，Si:C原子比例1:1.15至1:1.25。
根据本发明一实施例，上述半导体制造用部件可包括选自由聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。只是，本发明的半导体制造用部件只要是在用于半导体产品生产的干式蚀刻装置内向等离子露出并被蚀刻的半导体制造用部件，并未受到特殊限制。
图1为本发明一实施例的半导体制造用部件中的一个聚焦环100的剖视图。图1的聚焦环中，环整体具有包含SiC及C的复合体。
根据本发明的一例，在上述复合体中，上述C可存在于上述SiC之间。此时，C原子向具有优秀的耐等离子特性的SiC粒子之间填充，从而执行用于形成包含SiC及C的复合体的物理结合。通过这中间结合，形成更加致密的结晶接口，由此，本发明的半导体制造用部件具有优秀的耐等离子特性。
根据本发明的一例，在上述复合体中，上述C可以为热分解碳。上述C通过碳氢化合物原料的热分解存在。上述碳氢化合物原料只要是包含碳氢原子的原料，则本发明并不特殊限制，可使用C2H2、CH4、C3H8、C6H14、C7H8中的一种以上。
根据本发明的另一实施例，本发明提供包括复合体涂层的半导体制造用部件，上述包括复合体涂层的半导体制造用部件包括半导体制造用部件；以及包含SiC及C的复合体涂层，形成于上述半导体制造用部件的至少一面，在上述复合体中，Si:C原子比例为1:1.1至1:2.8。
图2为本发明一实施例的包括复合体涂层的半导体制造用部件的剖视图。图2的聚焦环在作为半导体制造用部件的聚焦环220的上部表面形成包含SiC及C的复合体涂层210。
根据本发明的一实施方式，通过相对厚的包含SiC及C的复合体进行蒸镀，即使不从开始就生产耐等离子性半导体制造用部件，而是利用包含SiC及C的复合体来涂敷以往生产的半导体制造用部件的表面中向等离子露出的部分，由此，可提高以往部件的耐等离子性。
在上述Si:C原子比例小于1:1.1的情况下，还包含C，由此，不会呈现出耐等离子特性改善效果，在上述Si:C原子比例大于1:2.8的情况下，可发生剥离。
根据本发明的一例，在上述复合体中，Si:C原子比例为1:1.1至1:1.3。当上述原子比例为1:1.1至1:1.3时，与SiC材料相比，耐等离子特性进一步得到改善。此时，包含1.1以上的比例的C原子向具有优秀耐等离子特性的SiC粒子之间填充，来进行用于形成包含SiC及C的复合体的物理结合。并且，在上述复合体中，优选地，Si:C原子比例1:1.15至1:1.25。
根据本发明一实施例，上述半导体制造用部件可包含石墨、SiC或同时包含两者。上述半导体制造用部件在本发明中并未特殊限定材料，但是可以为碳成分的石墨材料，也可以为耐等离子性优秀的SiC材料。
根据本发明一实施例，上述包括复合体涂层的半导体制造用部件可包括选自由聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。只是，本发明的半导体制造用部件只要是在用于半导体产品生产的干式蚀刻装置内向等离子露出并被蚀刻的半导体制造用部件，并未受到特殊限制。
根据本发明的一例，上述复合体涂层的平均厚度为1㎜至3㎜。通常，在使用干式蚀刻装置的半导体部件制造工序中，SiC材料的部件通过等离子蚀刻的平均厚度为1mm。因此，优选地，复合体涂层一作为被蚀刻的平均厚度的1㎜至3㎜作为平均厚度进行蚀刻。在复合体涂层的平均厚度小于1mm的情况下，通过等离子，上述复合体涂层全部被蚀刻，从而导致耐等离子特性脆弱的半导体制造用部件露出，在大于3mm的情况下，涂层的厚度变大，从而导致生产效率的降低。
根据本发明的另一实施例，本发明提供半导体制造用部件的制造方法，上述半导体制造用部件的制造方法提供通过利用Si前体源及C前体源材料的化学气相蒸镀法在包含石墨、SiC或同时包含两者的母材形成包含SiC及C的复合体的步骤。
为了通过化学气相蒸镀法蒸镀包含SiC及C的复合体来形成，需要作为蒸镀对象的母材。在本发明中使用的母材并未受到特殊限制，可包含石墨、SiC或同时包含两者。
本发明的包含SiC及C的复合体可使用Si前体源及C前体源制造。此时，作为Si前体，可使用在CH3SiCl3、(CH3)2SiCl2、(CH3)3SiCl、(CH3)4Si、CH3SiHCl2、SiCl4中的一种以上。并且，作为C前体，只要是包含碳和氢原子碳氢化合物原料，在本发明中并未特殊限制，可使用在C2H2、CH4、C3H8、C6H14、C7H8中的一种以上。
根据本发明的一例，形成上述包含SiC及C的复合体的步骤可在1000℃至1900℃的温度下执行。在形成包含SiC及C的复合体的步骤在小于1000℃的温度下执行的情况下，蒸镀速度变慢，生产性降低，在结晶形成过程中，非结晶化或结晶性会降低，在大于1900℃的温度下执行的情况下，微细结构的致密性降低，从而发生气孔或者裂痕发生概率增加。
根据本发明的一例，在形成上述包含SiC及C的复合体的步骤之前，还可包括混合Si前体及C前体的步骤。根据本发明的一实施方面，通过Si前体及C前体的喷嘴，并非向用于蒸镀的腔室一次性供给，而是在腔室外混合上述Si前体及C前体，从而通过喷嘴进行喷射。此时，在腔室外部追加形成用于混合上述Si前体及C前体的混合装置。
根据本发明的另一实施例，本发明提供包括复合体涂层的半导体制造用部件的制造方法，上述包括复合体涂层的半导体制造用部件的制造方法包括：准备半导体制造用部件的步骤；以及利用Si前体及C前体，通过化学气相蒸镀法在上述半导体制造用部件的至少一面形成包含SiC及C的复合体涂层的步骤。
根据本发明的一实施方式，通过相对厚的包含SiC及C的复合体进行蒸镀，即使不从一开始生产耐等离子性半导体制造用部件，利用包含SiC及C的复合体涂敷以往生产的半导体制造用部件的表面中向等离子露出的部分，由此，可提高以往部件的耐等离子性。
根据本发明的一例，上述半导体制造用部件可包含石墨、SiC或同时包含两者。上述半导体制造用部件在本发明中并未特殊限制材料，但是，可以为碳成分的石墨材料，也可以为耐等离子性优秀的SiC材料。
根据本发明的一例，形成上述包含SiC及C的复合体涂层的步骤可在1000℃至1900℃的温度下执行。在形成包含SiC及C的复合体的步骤在小于1000℃的温度下执行的情况下，蒸镀速度变慢，生产性降低，在结晶形成过程中，非结晶化或结晶性会降低，在大于1900℃的温度下执行的情况下，微细结构的致命性降低，从而发生气孔或者裂痕发生概率增加。
根据本发明的一例，在形成上述包含SiC及C的复合体涂层的步骤之前，还可包括混合Si前体及C前体的步骤。根据本发明的一实施方面，通过Si前体及C前体的喷嘴，并非向用于蒸镀的腔室一次性供给，而是在腔室外混合上述Si前体及C前体，从而通过喷嘴进行喷射。此时，在腔室外部追加形成用于混合上述Si前体及C前体的混合装置。
实施例
在用于生产半导体产品的干式蚀刻装置内，施加8000W的等离子电源(power)，执行确认基于C原子比例增加的半导体产品的等离子蚀刻比例的实验。
【表1】
在上述条件下，在Si材料的半导体制造用部件的情况下，10.21㎜被蚀刻，在SiC材料的情况下，7.45㎜被蚀刻，相比于Si，17％左右的蚀刻减少。另一方面，在包含SiC及C的复合体的情况下，在Si:C的原子比例为1:1.1的情况下，7.20㎜被蚀刻(相比于Si，蚀刻率为70.5％)，在1:1.2的情况下，5.76㎜被蚀刻，从而可确认耐等离子特性进一步提高。(相比于Si，时刻率为56.4％)。
相反，在包含SiC及C的复合体的Si:C的原子比例为1:1.4的情况下，耐等离子特性急剧减少，与SiC材料相比，耐等离子性降低，当与Si比较时，时刻率还算优秀(相比于Si，时刻率为91.5％)。
之后，实施本发明一实施方式的上述实施例1及实施例2的情况和对相比于Si，C含量为1.3的半导体制造用部件实施XRD分析实验来改善耐等离子性蚀刻特性的特征。
图4a为本发明一实施例(实施例1)的半导体制造用部件中，相比于Si，C含量为1.1时的XRD分析图表。图4b为本发明一实施例(实施例2)的半导体制造用部件中，相比于Si，C含量为1.2时的XRD分析图表。图4c为本发明一实施例的半导体制造用部件中，相比于Si，C含量为1.3时的XRD分析图表。
基于上述实验数据，根据本发明的一实施方式，控制Si:C的原子比例，由此，可制造比SiC材质具有优秀的耐等离子特性的材料的半导体制造用部件。
并且，与SiC材料相比，即使降低，但是比Si具有优秀的耐等离子特性的包含SiC及C的复合体材料也根据需要的耐等离子特性的程度及所需要的生产成本来选择，从而可制造需要水平的半导体制造用部件。
如上所述，通过限定实施例和附图说明了实施例，只要是本发明所属技术领域的普通技术人员，可从上述记载进行多种修改及变形。例如，说明的技术与说明的方法以不同顺序执行和/或说明的结构要素的与说明的方法不同形态结合或组合，或者通过其他结构要素或等同技术方案代替或置换也可实现适当结果。
因此，与其他实例、其他实施例及发明要求保护范围等同的内容也属于后述的发明要求保护范围。

Claims (17)

1.一种半导体制造用部件，其中，具有包含SiC及C的复合体，在所述复合体中，Si:C原子比例为1:1.1至1:2.8。
2.如权利要求1所述的半导体制造用部件，其中，在所述复合体中，Si:C原子比例为1:1.1至1:1.3。
3.如权利要求1所述的半导体制造用部件，其中，所述半导体制造用部件为包括选自聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。
4.如权利要求1所述的半导体制造用部件，其中，在所述复合体中，所述C存在于所述SiC之间。
5.如权利要求1所述的半导体制造用部件，其中，在所述复合体中，所述C为热分解碳。
6.一种包括复合体涂层的半导体制造用部件，其中，
包括：
半导体制造用部件；以及
包含SiC及C的复合体涂层，形成于所述半导体制造用部件的至少一面，
在所述复合体中，Si:C原子比例为1:1.1至1:2.8。
7.如权利要求6所述的包括复合体涂层的半导体制造用部件，其中，在所述复合体中，Si:C原子比例为1:1.1至1:1.3。
8.如权利要求6所述的包括复合体涂层的半导体制造用部件，其中，所述半导体制造用部件包含石墨、SiC或同时包含两者。
9.如权利要求6所述的包括复合体涂层的半导体制造用部件，其中，所述包括复合体涂层的半导体制造用部件为包括选自聚焦环、电极部及导体组成的组中的至少一种的等离子处理装置部件。
10.如权利要求6所述的包括复合体涂层的半导体制造用部件，其中，所述复合体涂层的平均厚度为1㎜至3㎜。
11.一种半导体制造用部件的制造方法，其中，包括通过利用Si前体源及C前体源的化学气相蒸镀法来在包含石墨、SiC或同时包含两者的母材形成包含SiC及C的复合体的步骤。
12.如权利要求11所述的半导体制造用部件的制造方法，其中，形成所述包含SiC及C的复合体的步骤在1000℃至1900℃的温度下执行。
13.如权利要求11所述的半导体制造用部件的制造方法，其中，在形成所述包含SiC及C的复合体的步骤之前，包括混合Si前体及C前体的步骤。
14.一种包括复合体涂层的半导体制造用部件的制造方法，其中，包括：
准备半导体制造用部件的步骤；以及
通过利用Si前体及C前体的化学气相蒸镀法，在所述半导体制造用部件的至少一面形成包含SiC及C的复合体涂层的步骤。
15.如权利要求14所述的包括复合体涂层的半导体制造用部件的制造方法，其中，所述半导体制造用部件包含石墨、SiC或同时包含两者。
16.如权利要求14所述的包括复合体涂层的半导体制造用部件的制造方法，其中，形成所述包含SiC及C的复合体涂层的步骤在1000℃至1900℃的温度下执行。
17.如权利要求14所述的包括复合体涂层的半导体制造用部件的制造方法，其中，在形成所述包含SiC及C的复合体涂层的步骤之前，包括混合Si前体及C前体的步骤。
CN201780076289.7A 2016-12-20 2017-12-18 半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法 Active CN110062951B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2016-0174736 2016-12-20
KR1020160174736A KR101941232B1 (ko) 2016-12-20 2016-12-20 반도체 제조용 부품, 복합체 코팅층을 포함하는 반도체 제조용 부품 및 그 제조방법
PCT/KR2017/014905 WO2018117557A1 (ko) 2016-12-20 2017-12-18 반도체 제조용 부품, 복합체 코팅층을 포함하는 반도체 제조용 부품 및 그 제조방법

Publications (2)

Publication Number Publication Date
CN110062951A true CN110062951A (zh) 2019-07-26
CN110062951B CN110062951B (zh) 2022-01-04

Family

ID=62626774

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780076289.7A Active CN110062951B (zh) 2016-12-20 2017-12-18 半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法

Country Status (6)

Country Link
US (1) US20200043757A1 (zh)
JP (1) JP6630025B1 (zh)
KR (1) KR101941232B1 (zh)
CN (1) CN110062951B (zh)
TW (1) TWI669417B (zh)
WO (1) WO2018117557A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210001176A (ko) * 2019-06-27 2021-01-06 세메스 주식회사 기판 처리 장치
KR102325223B1 (ko) * 2019-07-22 2021-11-10 세메스 주식회사 기판 처리 장치
US20230064070A1 (en) * 2021-08-30 2023-03-02 Auo Crystal Corporation Semiconductor processing equipment part and method for making the same
WO2024010101A1 (ko) * 2022-07-04 2024-01-11 주식회사 티씨케이 반도체 제조장치용 부품 및 그의 제조방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944963A (en) * 1994-01-21 1999-08-31 The Carborundum Company Method of coating a substrate with a SiCx film
US20030035891A1 (en) * 1999-08-13 2003-02-20 Asahi Glass Company Limited Joining method for high-purity ceramic parts
CN1640847A (zh) * 2004-01-09 2005-07-20 谭毅 一种简单的碳/碳化硅复合材料制造方法
CN101675180A (zh) * 2007-02-27 2010-03-17 斯克司聪先进材料公司 用于在基体上形成膜的方法
KR20110026969A (ko) * 2009-09-09 2011-03-16 주식회사 티씨케이 실리콘 카바이드 복합체 및 그 제조방법
CN102718535A (zh) * 2012-07-05 2012-10-10 湖南金博复合材料科技有限公司 碳/碳/碳化硅复合材料及制备方法
KR20140074531A (ko) * 2012-12-10 2014-06-18 주식회사 티씨케이 플라즈마 처리장치의 실리콘 카바이드 구조물
US9496147B2 (en) * 2010-03-16 2016-11-15 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900668A (en) * 1971-07-09 1975-08-19 Atlantic Res Corp Internal components for gas turbines of pyrolytic graphite silicon carbide codeposit
US5190631A (en) * 1991-01-09 1993-03-02 The Carborundum Company Process for forming transparent silicon carbide films
US5580834A (en) * 1993-02-10 1996-12-03 The Morgan Crucible Company Plc Self-sintered silicon carbide/carbon graphite composite material having interconnected pores which may be impregnated and raw batch and process for producing same
US6162543A (en) * 1998-12-11 2000-12-19 Saint-Gobain Industrial Ceramics, Inc. High purity siliconized silicon carbide having high thermal shock resistance
US6936102B1 (en) * 1999-08-02 2005-08-30 Tokyo Electron Limited SiC material, semiconductor processing equipment and method of preparing SiC material therefor
JP4786782B2 (ja) 1999-08-02 2011-10-05 東京エレクトロン株式会社 耐食性に優れたＣＶＤ−ＳｉＣおよびそれを用いた耐食性部材、ならびに処理装置
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP2002356387A (ja) * 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
US6716800B2 (en) * 2002-04-12 2004-04-06 John Crane Inc. Composite body of silicon carbide and binderless carbon, process for producing such composite body, and article of manufacturing utilizing such composite body for tribological applications
US7799375B2 (en) * 2004-06-30 2010-09-21 Poco Graphite, Inc. Process for the manufacturing of dense silicon carbide
JP2006294671A (ja) 2005-04-06 2006-10-26 Mitsui Chemicals Inc 低誘電率炭化珪素膜の製造方法
DE102009002129A1 (de) * 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
KR101547621B1 (ko) * 2013-10-17 2015-08-27 주식회사 티씨케이 플라즈마 처리장치의 실리콘 카바이드 구조물 및 그 제조방법
KR20160137746A (ko) * 2015-05-20 2016-12-01 삼성전자주식회사 기판 제조 장치, 및 그의 탄소 보호막 코팅 방법
KR102090513B1 (ko) * 2015-08-20 2020-03-18 엔테그리스, 아이엔씨. 탄화규소/흑연 복합체 및 그를 포함하는 물품 및 조립체

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5944963A (en) * 1994-01-21 1999-08-31 The Carborundum Company Method of coating a substrate with a SiCx film
US20030035891A1 (en) * 1999-08-13 2003-02-20 Asahi Glass Company Limited Joining method for high-purity ceramic parts
CN1640847A (zh) * 2004-01-09 2005-07-20 谭毅 一种简单的碳/碳化硅复合材料制造方法
CN101675180A (zh) * 2007-02-27 2010-03-17 斯克司聪先进材料公司 用于在基体上形成膜的方法
KR20110026969A (ko) * 2009-09-09 2011-03-16 주식회사 티씨케이 실리콘 카바이드 복합체 및 그 제조방법
US9496147B2 (en) * 2010-03-16 2016-11-15 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
CN102718535A (zh) * 2012-07-05 2012-10-10 湖南金博复合材料科技有限公司 碳/碳/碳化硅复合材料及制备方法
KR20140074531A (ko) * 2012-12-10 2014-06-18 주식회사 티씨케이 플라즈마 처리장치의 실리콘 카바이드 구조물

Also Published As

Publication number Publication date
TW201837233A (zh) 2018-10-16
JP2020503675A (ja) 2020-01-30
CN110062951B (zh) 2022-01-04
KR20180071747A (ko) 2018-06-28
JP6630025B1 (ja) 2020-01-15
WO2018117557A1 (ko) 2018-06-28
TWI669417B (zh) 2019-08-21
US20200043757A1 (en) 2020-02-06
KR101941232B1 (ko) 2019-01-22

Similar Documents

Publication Publication Date Title
CN110062951A (zh) 半导体制造用部件、包括复合体涂层的半导体制造用部件及其制造方法
JP4855758B2 (ja) 針状突起配列構造を表面に有するダイヤモンドの製造方法
CN111799167A (zh) 制造半导体装置的方法
CN108352303A (zh) 氧化硅的自对准遮蔽
CN110468388B (zh) 原子层沉积法形成氮化物膜的方法
CN112838004A (zh) 蚀刻方法以及蚀刻装置
KR100373327B1 (ko) 수평 탄소 나노튜브를 구비하는 전자소자 및 그 제조 방법
CN104966666A (zh) 一种氮化物纳米线的制作方法
CN115104195A (zh) Oled金属掩模涂布方法
KR101109407B1 (ko) 나노와이어가 구비된 기판 및 이의 제조방법
US10269560B2 (en) Atomic layer deposition method for manufacturing semiconductor structure
JP2012126113A (ja) 金属デポジションを用いたナノインプリント金型の製造方法
CN104617185B (zh) 一种以绒面单晶硅片为基底的含硅量子点薄膜材料的制备方法
KR102532228B1 (ko) 에칭과 화학기상증착에 의한 재성장을 이용한 계층적 다이아몬드 구조 제작방법 및 그 다이아몬드 구조를 갖는 방열소재
JP2008243938A (ja) 熱ｃｖｄ方法および熱ｃｖｄ装置
JP5227670B2 (ja) エピタキシャルウェーハの製造方法
CN110904389B (zh) 一种多功能一体Fe-Al-Ta共晶复合材料及其制备方法
CN109778139B (zh) 一种改善化学气相沉积腔室中加热器加热性能的方法及装置
JP2007176784A (ja) 有機金属化学気相蒸着法によるカーボンファイバの製造方法
JP2024516620A (ja) 金属ドープされたホウ素膜
JP2023518860A (ja) ホウ素と炭素フィルムの触媒形成
JP5458190B2 (ja) エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
KR20030058271A (ko) 플라즈마를 이용한 원자층 증착방법
US20210175078A1 (en) High boron-content hard mask materials
CN115198246A (zh) 用于形成包括氮化硅的图案化结构的方法和系统

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant