JP2020502806A - SiC蒸着層を含む半導体製造用部品及びその製造方法 - Google Patents
SiC蒸着層を含む半導体製造用部品及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
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- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 abstract description 56
- 238000001312 dry etching Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 90
- 238000000151 deposition Methods 0.000 description 56
- 238000005530 etching Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
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- 230000002159 abnormal effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
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- 238000001704 evaporation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- 230000001771 impaired effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
Description
Claims (15)
- 母材と、
前記母材の表面に形成されたSiC蒸着層と、
を含み、
前記母材及びSiC蒸着層の厚さの比は1:1ないし100:1である、SiC蒸着層を含む半導体製造用部品。 - 前記母材は、グラファイト、反応焼結SiC、常圧焼結SiC、ホットプレスSiC、再結晶SiC及び、CVD SiCからなる群より選択される少なくともいずれか1つを含む、請求項1に記載のSiC蒸着層を含む半導体製造用部品。
- 前記母材は、段差をもって形成された階段式の構造を含み、
前記段差の断面が曲面を含んだり前記段差をなしている面が鈍角をなす、請求項1に記載のSiC蒸着層を含む半導体製造用部品。 - 前記SiC蒸着層の厚さは、2mm〜20mmである、請求項1に記載のSiC蒸着層を含む半導体製造用部品。
- 前記SiC蒸着層は複数の層を含む、請求項1に記載のSiC蒸着層を含む半導体製造用部品。
- 前記母材の少なくとも一面に形成されたSiC蒸着層の厚さは、前記母材の前記一面の反対側の面に形成されたSiC蒸着層の厚さの1.5倍〜3倍である、請求項1に記載のSiC蒸着層を含む半導体製造用部品。
- グラファイト、反応焼結SiC、常圧焼結SiC、ホットプレスSiC、再結晶SiC、及びCVD SiCからなる群より選択される少なくともいずれか1つを含む母材を備えるステップと、
前記母材上にSiC蒸着層を形成するステップと、
を含むSiC蒸着層を含む半導体製造用部品の製造方法。 - 前記母材及び前記SiC蒸着層の厚さの比は1:1ないし100:1である、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップはCVD法に基づく、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、1000℃〜1900℃の温度で行われる、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、蒸着開始時の温度よりも蒸着終了時の温度がさらに高い条件で行われる、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは、前記SiC蒸着層を形成する間に順次温度を上昇しながら実行する、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップは複数回行われる、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記SiC蒸着層を形成するステップ後に1500℃〜2000℃で熱処理する残留応力解消ステップをさらに含む、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
- 前記母材はジグに装着され、前記ジグはテーパされた形状をもって前記母材の表面接触部の方向に幅が増加する、請求項7に記載のSiC蒸着層を含む半導体製造用部品の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0174856 | 2016-12-20 | ||
KR20160174856 | 2016-12-20 | ||
KR1020170170791A KR102051668B1 (ko) | 2016-12-20 | 2017-12-12 | SiC 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
KR10-2017-0170791 | 2017-12-12 | ||
PCT/KR2017/014907 WO2018117559A1 (ko) | 2016-12-20 | 2017-12-18 | Sic 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법 |
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JP6995856B2 JP6995856B2 (ja) | 2022-01-17 |
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KR (2) | KR102051668B1 (ja) |
CN (1) | CN110050326B (ja) |
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KR102096787B1 (ko) * | 2019-06-11 | 2020-04-03 | 주식회사 바이테크 | 다층 구조의 다결정 탄화규소 성형체의 제조방법 |
KR102360676B1 (ko) * | 2020-02-04 | 2022-02-11 | 주식회사 케이엔제이 | 탄화규소층을 포함하는 부품의 제조 방법 |
KR102201523B1 (ko) * | 2020-07-02 | 2021-01-13 | 주식회사 티씨케이 | 내플라즈마 부재를 포함하는 반도체 제조용 부품 및 이의 제조방법 |
US11827999B2 (en) | 2021-01-12 | 2023-11-28 | Applied Materials, Inc. | Methods of forming silicon carbide coated base substrates at multiple temperatures |
KR102642090B1 (ko) | 2021-08-24 | 2024-02-29 | 주식회사 케이엔제이 | 지지 소켓 및 증착층을 포함하는 부품 제조 방법 |
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JPH06263569A (ja) * | 1993-03-08 | 1994-09-20 | Tokai Carbon Co Ltd | 炭素質基材の耐酸化性被膜形成法 |
JPH10209061A (ja) * | 1997-01-16 | 1998-08-07 | Tokai Carbon Co Ltd | 半導体拡散炉用の構成部材 |
JPH11131236A (ja) * | 1997-10-27 | 1999-05-18 | Ngk Insulators Ltd | 耐蝕性部材およびその製造方法 |
JP2001199791A (ja) * | 2000-01-11 | 2001-07-24 | Applied Materials Japan Inc | 熱処理装置および熱処理装置用リフト部材 |
JP2004296778A (ja) * | 2003-03-27 | 2004-10-21 | Toshiba Ceramics Co Ltd | サセプタおよびその製造方法 |
JP2008277781A (ja) * | 2007-03-30 | 2008-11-13 | Covalent Materials Corp | 縦型ウエハボート |
WO2014196323A1 (ja) * | 2013-06-06 | 2014-12-11 | イビデン株式会社 | ウエハキャリアおよびこれを用いたエピタキシャル成長装置 |
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KR20190137736A (ko) | 2019-12-11 |
CN110050326A (zh) | 2019-07-23 |
KR102051668B1 (ko) | 2019-12-04 |
TW201829826A (zh) | 2018-08-16 |
TWI667364B (zh) | 2019-08-01 |
KR20180071952A (ko) | 2018-06-28 |
US20200066514A1 (en) | 2020-02-27 |
US11694893B2 (en) | 2023-07-04 |
CN110050326B (zh) | 2023-07-18 |
SG10202013142QA (en) | 2021-02-25 |
JP6995856B2 (ja) | 2022-01-17 |
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