TWI747033B - 具有嵌入式射頻屏蔽的半導體基板支撐件 - Google Patents

具有嵌入式射頻屏蔽的半導體基板支撐件 Download PDF

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TWI747033B
TWI747033B TW108130729A TW108130729A TWI747033B TW I747033 B TWI747033 B TW I747033B TW 108130729 A TW108130729 A TW 108130729A TW 108130729 A TW108130729 A TW 108130729A TW I747033 B TWI747033 B TW I747033B
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大衛 班傑明森
麥克 葛瑞斯
壽南 朴
迪米奇 路柏曼斯基
趙在龍
尼可萊 卡寧
丹薛那Ｋ 卡路爾阿曲奇
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Abstract

示例性的支撐組件可包括限定基板支撐表面的頂部定位盤，其中頂部定位盤還以高度為特徵。組件可包括桿，該桿在頂部定位盤之與基板支撐表面相對的第二表面上與頂部定位盤耦接。組件可包括RF電極，該RF電極經嵌入在靠近基板支撐表面的頂部定位盤內。組件可包括經嵌入在頂部定位盤內的加熱器。組件亦可包括經嵌入在頂部定位盤內的接地屏蔽件。接地屏蔽件的特徵可在於，內部區域徑向地延伸穿過頂部定位盤。接地屏蔽件的特徵可進一步在於，外部區域垂直於內部區域延伸。

Description

具有嵌入式射頻屏蔽的半導體基板支撐件
本申請案要求2018年9月14日所申請的美國專利申請案號16/131,972的優先權。出於所有目的，此申請的全部內容經由引用其整體之方式結合於本文中。
本技術係關於用於半導體製造的元件和設備。更具體來說，本技術係關於基板支撐組件和其他半導體處理設備。
藉由在基板表面上產生複雜圖案化的材料層的處理使得積體電路成為可能。在基板上產生圖案化材料需要用於形成和去除材料的受控制方法。發生這些處理時的溫度可能會直接影響最終產品。基板溫度通常在處理期間經由支撐基板的組件來控制和維持。位於內部的加熱元件可能會在支撐架內產生熱量，該些熱量可能會傳導轉移到基板上。基板支撐件亦可在某些技術中用於形成基板位準電漿。在基板附近產生的電漿可能會引起元件轟擊，及在腔室的不適宜區域中形成寄生電漿。另外，利用基座同時產生熱量和產生電漿可能會引起干擾效應。
由於各種操作過程可能會利用高溫及基板位準電漿形成，故基板支撐件的組成材料可暴露於腐蝕性和侵蝕性材料。因此，需要可用於生產高品質元件和結構的改進的系統和方法。這些和其他需求由本技術解決。
示例性的支撐組件可包括限定基板支撐表面的頂部定位盤，其中該頂部定位盤還以高度為特​​徵。組件可包括桿，該桿在頂部定位盤之與基板支撐表面相對的第二表面上與頂部定位盤耦接。組件可包括RF電極，該RF電極經嵌入在靠近基板支撐表面的頂部定位盤內。組件可包括經嵌入在頂部定位盤內的加熱器。組件亦可包括經嵌入在頂部定位盤內的接地屏蔽件或法拉第籠。接地屏蔽件的特徵在於，內部區域徑向地延伸穿過頂部定位盤。接地屏蔽件的特徵進一步在於，外部區域垂直於內部區域延伸。
在一些實施例中，接地屏蔽件的特徵可進一步在於垂直於內部區域延伸的外部區域，且接地屏蔽件的外部區域可至少部分地垂直延伸穿過頂部定位盤的高度。頂部定位盤可在基板支撐表面內限定凹部，該凹部經配置成接收用於處理的基板。頂部定位盤可包括陶瓷材料。加熱器可位於RF電極和接地屏蔽件之間的頂部定位盤內。加熱器可經配置為將由頂部定位盤支撐的基板加熱到大於或約300℃的溫度。加熱器可包括第一加熱器和第二加熱器，第二加熱器可與第一加熱器分開控制，且第二加熱器可圍繞第一加熱器的外邊緣延伸。組件可進一步包括桿，該桿在頂部定位盤之與基板支撐表面相對的第二表面上與頂部定位盤耦接。桿可限定內部通道，RF棒經由該內部通道延伸並與RF電極耦合。組件亦可包括接地迴路，該接地迴路與RF棒同軸地延伸穿過內部通道。組件亦可包括接地阻抗電極，該接地阻抗電極經設置在靠近基板支撐表面的頂部定位盤內。
本技術的一些實施例亦可包括基板支撐組件。組件可包括頂部定位盤，該頂部定位盤限定基板支撐表面並以高度為特​​徵。組件可包括桿，該桿在頂部定位盤之與基板支撐表面相對的第二表面上與頂部定位盤耦接。組件可包括RF電極，該RF電極經嵌入在靠近基板支撐表面的頂部定位盤內。組件可包括經嵌入在頂部定位盤內的加熱器。組件亦可包括經嵌入在頂部定位盤內的接地屏蔽。接地屏蔽可包括徑向延伸穿過頂部定位盤的底部。接地屏蔽亦可包括垂直定位在接地屏蔽基座和RF電極之間的中間環，及中間環可與基座電耦合。
在一些實施例中，頂部定位盤可在基板支撐表面內限定凹部，該凹部經配置成接收用於處理的基板。頂部定位盤和桿可包括陶瓷材料。加熱器可位於RF電極和接地屏蔽件之間的頂部定位盤內。加熱器可被配置為將由頂部定位盤支撐的基板加熱到大於或約300℃的溫度。加熱器可包括第一加熱器和第二加熱器。第二加熱器可與第一加熱器分開控制，且第二加熱器可圍繞第一加熱器的外邊緣延伸。組件亦可包括接地阻抗電極，該接地阻抗電極經設置在靠近基板支撐表面的頂部定位盤內。接地阻抗電極可沿著與接地屏蔽件分開的接地路徑與地面耦合。組件進一步可包括導電柱，該導電柱在頂部定位盤內垂直延伸，且將接地屏蔽件的中間環與接地屏蔽件的底部電耦合。中間環可包括在頂部定位盤內彼此垂直偏移的複數個中間環。複數個中間環中的每個環可位於頂部定位盤內的相鄰環的1cm之內。
這樣的技術可提供優於習知系統和技術的許多益處。例如，本技術的實施例可提供既可產生基板位準電漿又可耐受高溫操作的基板支撐件。另外，藉由結合內部接地屏蔽，可限制或防止材料侵蝕和腐蝕。結合以下描述和附圖更詳細地描述了這些和其他實施例及其之眾多優勢和特徵。
一些蝕刻處理可包括多種操作，該多種操作包括離子轟擊操作及化學處理兩者，該離子轟擊操作係從惰性前驅物產生的電漿在基板位準處發生及該化學處理係可包括或可不包括電漿產生，但可包括蝕刻劑前驅物(如含鹵素的前驅物)。另外，利用已開發的小規模蝕刻處理(如某些原子層蝕刻)，較高溫度的操作可能對蝕刻處理有 利。當將基板支撐組件用於電漿產生及熱產生時，操作條件和參數可能會產生問題。
例如，可利用基板支撐件內的嵌入式電極在基板位準處產生偏壓電漿。例如，當電極發射如RF能量之類的能量時，可在所有方向上發射波，且可基於可能發生大量接地耦合的位置來產生電漿。在許多操作中，蓋或面板可位於基板支撐件上方，且可在支撐件上的基板與上覆元件之間限定處理區域。一般來說，這是較佳產生電漿的區域。然而，基於許多腔室設計，基板支撐件可經定位在基板支撐件下方的腔室側壁及/或腔室底部附近。因此，可向腔室側壁提供相對較近的接地路徑。這可能在基板支撐件的側面及基板支撐件的下方產生寄生電漿。這種電漿不僅限制了處理能力，且還可能對這些區域中暴露的腔室元件造成額外的損害。
因此，通常在基板支撐件周圍形成接地屏蔽件。許多習知的接地屏蔽件包括導電材料，該導電材料沿桿延伸並沿著基板所在的定位盤的底部和側面行進。接著，可操作接地屏蔽件以限制經由基座的發射，且電漿可更好地包含在處理區域內。然而，在這種配置中的接地屏蔽層暴露於可能腐蝕接地屏蔽層材料的離子轟擊及可能腐蝕接地屏蔽層材料的化學蝕刻劑兩者中。因此，這些配置中的許多配置經限制於較低溫度操作，這可允許保護接地屏蔽件，該接地屏蔽件可以是不能在較高溫度的操作下保持的塗層形式。例如，鋁接地屏蔽件可能會在超過450°C的溫度下開始變形或熔化，並可能在這些溫度下從化學蝕刻劑中主動腐蝕。另外，當溫度超過300°C時，許多氧化物塗層將開始剝離，這可能會暴露出可能被電漿物質蝕刻或腐蝕的下層材料。
本技術經由在基板支撐件內形成接地屏蔽件或法拉第籠來克服這些挑戰，其中可在本申請案中同義地使用「接地屏蔽件」或「法拉第籠」。在這樣的配置中，接地屏蔽件可能不會暴露於處理前驅物，該等處理前驅物可能會在操作期間保護屏蔽件。另外，可在較高溫度下進行操作，在此溫度下習知技術可能會遭受接地屏蔽件上的塗層剝落及接地屏蔽件本身變形或熔化的問題。
儘管剩餘的本揭露內容將例行指出利用所揭露的技術的特定的蝕刻處理，但將容易理解的是，本系統和方法同樣適用於沉積、清潔腔室及在所描述的腔室中可能發生的處理。因此，本技術不應被視為僅限於僅與蝕刻處理或腔室一起使用的技術。本揭露內容將討論一種可能的系統和腔室，其中在描述根據本技術的實施例之對此系統的另外的變化和調整之前，可使用根據本技術的實施例的基座。
圖 1 示出了根據實施例之沉積、蝕刻、烘烤及固化腔室的處理系統100的一實施例的俯視圖。在圖中，一對前開式晶圓傳送盒（FOUP）102提供各種尺寸的基板，這些基板在被放置到位於串聯部分109a-109c中之基板處理腔室108a-108f中之一者前，由機械臂104接收並放置在低壓保持區域106中。第二機械臂110可用於將基板晶圓從保持區域106傳送到基板處理腔室108a-108f並返回。每個基板處理腔室108a-108f可經裝配成執行多個基板處理操作，該多個基板處理操作除了循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清洗、除氣、定向和包括退火、灰化等的其他基板處理之外還包括本文所述的乾式蝕刻處理。
基板處理腔室108a-108f可包括一或多個用於在基板晶圓上沉積、退火、固化及/或蝕刻介電膜的系統元件。在一種配置中，可使用兩對處理腔室(例如108c-108d和108e-108f)以在基板上沉積介電材料，且可使用第三對處理腔室(例如108a-108b)以蝕刻經沉積的介電質。在另一種配置中，所有三對腔室(例如108a-108f)可被配置為蝕刻基板上的介電膜。可在與不同實施例中所示的製造系統分離的(多個)腔室中進行所描述的處理中的任何一者或多者。應當理解，系統100可構想成用於介電膜的沉積、蝕刻、退火和固化腔室的其他配置。
圖 2A 示出了示例性的處理腔室系統200的橫截面圖，該示例性的處理腔室系統200在處理腔室內具有分隔的電漿產生區域。在膜蝕刻期間，例如氮化鈦、氮化鉭、鎢、矽、多晶矽、氧化矽、氮化矽、氮氧化矽及碳氧化矽等，處理氣體可經由氣體入口組件205流入第一電漿區域215。遠端電漿系統（RPS）201可以可選地包含在系統中，且可處理第一氣體，該第一氣體接著行進穿過氣體入口組件205。氣體入口組件205可包括兩個或更多不同的氣體供應通道，其中第二通道(未示出) ，若包括在內，則可繞過RPS 201。
示出了且根據實施例可分別包括冷卻板203、面板217、離子抑制器223、噴淋頭225和其上佈置有基板255的基板支撐件265。基座265可具有熱交換通道，熱交換流體流經該熱交換通道以控制基板的溫度，其可在處理操作期間被操作以加熱及/或冷卻基板或晶圓。亦可電阻加熱基座265的晶圓支撐盤片(其可包括鋁、陶瓷或其組合)，以使用嵌入式電阻加熱器元件實現相對較高的溫度(如從高達或約100°C到高於或約1100°C)。
面板217可為金字塔形的、圓錐形的或具有延伸到到寬底部的窄頂部的另一類似結構。如圖所示，另外地，面板217可為平坦的且包括用於分配處理氣體的複數個通道。取決於RPS 201的用途，產生電漿的氣體及/或激發電漿的物質可穿過在面板217中的複數個孔，如圖2B所示，用於更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205敞開到由面板217而與第一電漿區域215隔開的氣體供應區域258中，以使氣體/物質流過面板217中的孔進入第一電漿區域215中。可選擇結構和操作特徵以防止電漿從第一電漿區域215大量回流到供應區域258、氣體入口組件205和流體供應系統210中。示出了面板217、或腔室的導電頂部分及噴淋頭225具有位於該些特徵之間的絕緣環220，其允許相對於噴淋頭225及/或離子抑制器223將AC電勢施加到面板217。絕緣環220可位於面板217與噴淋頭225及/或離子抑制器223之間使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未示出）可另外位於第一電漿區域215中，或者以其他方式與氣體入口組件205耦合，以影響流體流經由氣體入口組件205進入區域的流。
離子抑制器223可包括板或其他幾何形狀，該板或其他幾何形狀在整個結構中限定了複數個孔，該複數個孔被配成抑制離子帶電物種從第一電漿區域215遷移出來，同時允許不帶電荷的中性或自由基物種通過離子抑制器223進入抑制器和噴淋頭之間的活化氣​​體輸送區域。在實施例中，離子抑制器223可包括具有各種孔配置的穿孔板。這些不帶電荷的物質可包括高反應性物質，該等高反應性物質以較低反應性的載氣經由孔來傳輸。如上所述，可減少離子物質經由孔的遷移，且在某些情況下可完全抑制離子物質經由孔的遷移。控制通過離子抑制器223的離子物質的量可有利地提供對與下面的晶圓基板接觸的氣體混合物的增加控制，這繼而可增加對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變其蝕刻選擇性，例如SiNx：SiOx蝕刻比及Si：SiOx蝕刻比等。在執行沉積的替代實施例中，它也可改變用於介電質材料之從保形到可流動樣式的沉積的平衡。
離子抑制器223中的複數個孔可經配置為控制活化氣體(即離子、自由基及/或中性物質)通過離子抑制器223。例如，可控制孔的長寬比、或孔的直徑長度比及/或孔的幾何形狀，以便減少通過離子抑制器223的活化氣體中的離子電荷物質的流。離子抑制器223中的孔可包括面對第一電漿區域215的錐形部分和面對噴淋頭225的圓柱形部分。圓柱形部分的形狀和尺寸可經設置成控制到達噴淋頭225的離子物質的流。也可將可調節的電偏壓施加到離子抑制器223上來作為控制離子物質流過該抑制器的附加手段。
離子抑制器223可起到減少或消除從電漿產生區域行進到基板的離子帶電物質的量的作用。不帶電的中性和自由基物質仍可通過離子抑制器中的開口來與基板反應。應當注意，在實施例中，可以不執行圍繞基板之反應區域中的離子帶電物質的完全消除。在某些情況下，離子物質旨在到達基板以便執行蝕刻及/或沉積處理。在這些情況中，離子抑制劑可幫助將反應區域中離子物質的濃度控制在有助於處理的位準。
噴淋頭225與離子抑制器223組合可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍允許被激發的物質從第一電漿 區域215進入基板處理區域233中。以此方式，腔室可經配置成防止電漿接觸正被蝕刻的基板255。這可有利地保護在基板上經圖案化的各種複雜結構和膜；若該等各種複雜結構和膜與所產生的電漿直接接觸，則可能被損壞、移位或以其他方式翹曲。另外，當允許電漿接觸基板或接近基板位準時，氧化物物質蝕刻的速率可增加。因此，若材料的暴露區域是氧化物，則可藉由使電漿遠離基板來進一步保護此材料。
處理系統可進一步包括與處理腔室電耦合的電源240，以向面板217、離子抑制器223、噴淋頭225及/或基座265提供電力，以在第一電漿區域215或處理區域233中產生電漿。取決於所執行的處理，電源可經配置為向腔室輸送可調節的功率量。此種配置可允許在正在執行的處理中使用可調電漿。與通常具有開或關功能的遠端電漿單元不同，可調電漿可經配置為向第一電漿區域215輸送特定量的功率。這又可允許開發特定的電漿特性，使得前驅物可用特定方式解離以增強由這些前驅物產生的蝕刻輪廓。
可在噴淋頭225上方的第一電漿區域215或在噴淋頭225下方的基板處理區域233中點燃電漿。在實施例中，在基板處理區域233中形成的電漿可為DC偏壓的電漿，其形成時將基座用作電極。電漿可存在於第一電漿區域215中，以從(例如)含氟前驅物或其他前驅物的流入中產生自由基前驅物。可將通常在射頻(RF)範圍內 的AC電壓施加在處理腔室的導電頂部分(如面板217)與噴淋頭225及/或離子抑制器223之間，以在沉積期間點燃第一電漿區域215中的電漿。RF電源可生成13.56MHz的高RF頻率，但也可單獨生成其他頻率，也可與13.56MHz頻率組合生成其他頻率。
圖2B示出了影響經由面板217的處理氣體分佈的特徵的詳細視圖253。如圖2A和圖2B中所示，面板217、冷卻板203和氣體入口組件205相交以限定氣體供應區域258；處理氣體可從氣體入口205被輸送到該氣體供應區域258中。氣體可填充氣體供應區域258且經由面板217中的孔259流到第一電漿區域215。孔259可經配置成以基本上單向的方式引導流以使處理氣體可流入處理區域233中，但部分或完全防止處理氣體穿過面板217後回流到氣體供應區域258中。
用於在處理腔室部分200中使用的如噴淋頭225的氣體分配組件可被稱為雙通道噴淋頭(DCSH)，且在圖3所描述的實施例中另外進行了詳細描述。雙通道噴淋頭可提供蝕刻處理，該等蝕刻處理允許蝕刻劑在處理區域233之外的分離，以提供與腔室元件之間的有限的相互作用及在被傳送到處理區域之前彼此之間的有限的相互作用。
噴淋頭225可包括上板214和下板216。板可彼此耦接以在板之間限定容積218。板的耦接可使得提供穿過上板和下板的第一流體通道219，及穿過下板216的第二流體通道221。所形成的通道可經配置成提供從容積218僅經由第二流體通道221穿過下板216的流體通路，且第一流體通道219可與板和第二流體通道221之間的容積218流體隔離。可經由噴淋頭225的側面流體地接近容積218。
圖 3 是根據實施例之與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可對應於圖2A中所示的噴淋頭225。示出第一流體通道219的通孔365可具有複數個形狀和構造，以便控制並影響經由噴淋頭225的前驅物的流動。示出第二流體通道221的視圖的小孔375可基本上均勻地分佈在噴淋頭的表面上、甚至在通孔365之間，且可幫助前驅物離開噴淋頭時提供比其他配置更均勻的混合。
圖 4 示出了根據本技術的一些實施例的示例性的半導體處理腔室400的示意性局部橫截面圖。圖4可包括上文關於圖2所討論的一或多個元件，且可示出與該腔室有關的更多細節。腔室400可用於執行半導體處理操作，該等半導體處理操作包括如前所述的修改和蝕刻。腔室400可示出半導體處理系統的處理區域的局部視圖，且可不包括所有元件(如先前描述的另外的蓋堆疊元件)，應理解這些元件將併入腔室400的一些實施例中。
如所指出的，圖4可示出處理腔室400的一部分。腔室400可包括噴淋頭405及基板支撐組件410。噴淋頭405和基板支撐組件410可與腔室側壁415一起限定其中可產生電漿的基板處理區域420。基板支撐件可包括頂部定位盤425；頂部定位盤425可包括經嵌入或經設置在頂部定位盤內的一或多個元件。在一些實施例中，併入頂部定位盤中的元件可不暴露於處理材料，且可完全保持在頂部定位盤425內。頂部定位盤425可限定基板支撐表面427，且可以高度和長度為特徵。在一些實施例中，頂部定位盤可為橢圓形的，且其特徵可在於從中心軸穿過頂部定位盤的一或多個徑向尺寸。應當理解的是，頂部定位盤可為任何幾何形狀，且當討論徑向尺寸時，該等徑向尺寸可限定任何從頂部定位盤的中心位置開始計算的長度。
頂部定位盤425可與桿430耦接，桿430可包括如下文將要討論的用於輸送和接收電路管線的通道及/或可與頂部定位盤425的內部元件耦接的流體管線。頂部定位盤425可包括相關的通道或元件，以用作靜電吸盤、真空吸盤或任何其他類型的吸盤系統。桿430可在頂部定位盤的與基板支撐表面相對的第二表面上與頂部定位盤耦合。頂部定位盤425可包括電極435，該電極435可以是RF電極，該電極435被嵌入在頂部定位盤內靠近基板支撐表面的位置。電極435可與電源440電耦合。電源440可被配置為向導電的定位盤電極435提供能量或電壓。可操作電源440以在半導體處理腔室400的處理區域420內形成前驅物的偏壓電漿。形成在處理區域內的離子可被引導到位於基板支撐件上的基板。這可藉由損壞鍵合結構並在先前所述的後續蝕刻操作中促進去除而對經暴露的膜進行修飾。
頂部定位盤425亦可在基板支撐表面內限定凹入區域445。凹入區域445可形成在頂部定位盤的內部區域處，且可經配置成接收用於處理的基板。基板可位於凹入區域內，且被可包圍基板的外部區域447容納。在一些實施例中，外部區域447的高度可使得基板與外部區域447處的基板支撐表面的表面高度齊平或凹進下方。凹進的表面可在處理期間控制邊緣效應，這可在一些實施例中改善跨基板蝕刻的均勻性。在一些實施例中，邊緣環可圍繞頂部定位盤的外圍設置，且可至少部分地限定可在其中安置基板的凹部。在一些實施例中，頂部定位盤的表面可基本上平坦的，且邊緣環可完全限定可在其中安置基板的凹部。
在一些實施例中，頂部定位盤425以及桿430可為絕緣或介電材料。例如，氧化物、氮化物、碳化物和其他材料可用於形成元件。示例性材料可包括陶瓷，其包括氧化鋁、氮化鋁、碳化矽、碳化鎢和任何其他金屬或過渡金屬氧化物、氮化物、碳化物、硼化物或鈦酸鹽，及這些材料與其他絕緣或介電材料的組合。可使用不同等級的陶瓷材料來提供經配置成在特定溫度範圍內操作的複合材料；因此，在一些實施例中，可將不同陶瓷等級的相似材料用於頂部定位盤和桿。
頂部定位盤425亦可包括容納在頂部定位盤內的嵌入式加熱器450。在實施例中，加熱器450可包括電阻式加熱器或流體加熱器。在一些實施例中，電極435可作為加熱器，但藉由將這些操作解耦，可提供更多的單獨控制，且可提供經擴展的加熱器覆蓋範圍，並同時限制用於電漿形成的區域。儘管導電元件可被嵌入頂部定位盤內且被配置為接收電流(如AC電流)以加熱頂部定位盤，但加熱器450仍可包括與頂部定位盤材料結合或耦合的聚合物加熱器。可經由與上述RF功率類似的通道經由桿430傳遞電流。在實施例中，加熱器450可包括多個加熱器，且可包括第一加熱器452和第二加熱器454，及任何更多數量的加熱器，其包括至少約三個加熱器、大於或約四個加熱器、大於或約五個加熱器、大於或約六個加熱器、大於或約七個加熱器、大於或約八個加熱器、大於或約九個加熱器及大於或約十個加熱器或更多。每個加熱器可與定位盤的一個區域相關聯，因此示例性的定位盤可包括與加熱器數量相似或更多的區域。
第一加熱器452可在第一位置容納在頂部定位盤內，而第二加熱器454可在第二位置容納在頂部定位盤內。第一加熱器452可定位在頂部定位盤425的內部區域，且可定位在頂部定位盤的內部區域(如凹入區域445)內或與之成一直線。第二加熱器454可與第一加熱器成一直線，且在實施例中可圍繞第一加熱器延伸。第二加熱器454可跨過凹入區域445以及外部區域447延伸，且可為環形以圍繞第一加熱器452延伸。在實施例中，第二加熱器454可位於第一加熱器452的徑向外側。可在兩個加熱器之間限定間隙，或加熱器可彼此相鄰延伸或彼此部分重疊。間隙可位於第一加熱器452和第二加熱器454之間，且可為徑向地位於兩個加熱器之間的環形間隙。
可彼此獨立地操作第一加熱器452和第二加熱器454，且第一加熱器452和第二加熱器454可調節整個頂部定位盤425及位於頂部定位盤425上的基板的溫度。每個加熱器可具有操作溫度範圍以加熱頂部定位盤及/或基板高於或約為100°C，且每個加熱器可經配置成加熱高於或約為125°C、高於或約為150°C、高於或約為175°C、高於或約為200°C、高於或約為250°C、高於或約為300°C、高於或約為350°C、高於或約為400°C、高於或約為450°C、高於或約為500°C，高於或約為550°C、高於或約為600°C、高於或約為650°C、高於或約為700°C、高於或約為750°C、高於或約為800°C、高於或約為850°C、高於或約為900℃、高於或約為950℃、高於或約為1000℃或更高。加熱器進一步可被配置為在這些陳述的數目中的任何兩者之間包含的任何範圍中操作，或在這些範圍中的任何一者包含的較小範圍內操作。
第一加熱器452和第二加熱器454亦可被配置為在彼此的溫度範圍內操作，且被配置為在頂部定位盤425的整個表面上或位於頂部定位盤425上的基板上維持特定的溫度。例如，第一加熱器452可被配置為保持內部區域在第一溫度(該內部區域如凹入區域445或此區域之與基板的內部分相關聯的一部分)，及第二加熱器454可被配置為將外部區域447及內部區域的外部分（例如，此區域之與基板的外部分相關聯的一部分）維持在與第一溫度相似或不同的第二溫度。加熱器或區域的每個溫度可以是以上說明或包括的任何溫度，其可允許兩個加熱器以數十度或數百度的差操作。
另外，在實施例中，兩個加熱器的操作溫度之間或內部區域和外部區域的維持溫度之間的差可小於10°C。在實施例中，兩個加熱器之間或由兩個區域保持的溫度差也可小於或約5°C、小於或約4°C、小於或約3°C、小於或約2°C、小於或約1°C、小於或約0.9°C、小於或約0.8°C、小於或約0.7°C、小於或約0.6°C、小於或約0.5°C、小於或約0.4℃、小於或約0.3℃、小於或約0.2℃，或小於或約0.1℃或以下。在一些實施例中，可藉由允許兩個區域之間的這種微小的溫差來在操作期間控制由於前驅物流過基板而引起的溫度波動、來自其他腔室元件的干擾，在一個區域而不是在另一個區域中基於製造步驟而發生的反應或操作及其他波動源。與習知技術相比，這可允許改善整個區域和整個正被處理的基板的均勻性。
頂部定位盤425亦可包括經嵌入在頂部定位盤內的接地屏蔽件460，這將在下文進一步描述。接地屏蔽件可為本技術的實施例所包含的幾種配置之一，且可限制或防止在遠離處理區域420的區域中的寄生電漿形成。接地屏蔽件460可與延伸穿過桿的內部的接地迴路465耦合。接地屏蔽件460可以是可加熱到上文所討論的任何溫度的任何數量的材料，且可包括多種導電材料，該等導電材料包括鎢、鉬、鉑或可耦合在頂部定位盤內的任何其他導電材料。例如，可選擇接地屏蔽件的導電材料以匹配耦合材料的熱膨脹及及頂部定位盤的陶瓷，如氮化鋁或任何前述材料。示例性的耦接器可包括多種將接地屏蔽層與接地迴路和頂部定位盤連接的銅焊或黏結材料，如鐵鎳鈷合金、鉬、鎢、鈷、鎳或任何其他可操作以在加熱或處理期間降低力或應力的材料。
在一些實施例中，加熱器450可經定位在電極435和接地屏蔽件460之間，儘管在一些實施例中，接地屏蔽件460也可定位在電極435和加熱器450之間，如圖示的加熱器和接地屏蔽件位置切換之處。當切換位置且加熱器位於接地屏蔽件下方時，可對加熱器進行屏蔽，這可提高效能。然而，這樣的切換可能將加熱器放置在距基板較遠的位置，這可能會對受控加熱造成問題。另外，在電極和接地屏蔽件之間可保持一定的距離，以確保功率擴展到電漿且不會被接地屏蔽件過度虹吸，在此配置中這可能會增加定位盤的厚度，並可能進一步對受控加熱造成問題。
在一些實施例中，頂部定位盤425可以可選地包括經嵌入在頂部定位盤內的接地阻抗電極470，且在一些實施例中，頂部定位盤425可包括複數個接地阻抗電極。接地阻抗電極470可與接地源耦合，該接地源係與接地屏蔽件460分開。接地阻抗電極470可經由可變電容器與接地迴路耦合，這可允許對電漿鞘的調節。在一些實施例中，可將接地阻抗電極結合在頂部定位盤的外部區域447周圍，且可為如圖所示的環形電極。如前所述，由於電漿鞘在邊緣上的特性，在電漿產生中可能發生邊緣效應。例如，若鞘在基板的邊緣周圍彎曲，則可能會影響離子轟擊的方向，這會以小於垂直軌跡的方向將離子導向基板，並會影響操作的均勻性。藉由調節接地網的迴路上的電容器而可在阻抗電極上擴展不同的電位，這可允許控制邊緣處的鞘電位且可改善操作的均勻性。
圖 5 示出了根據本技術的實施例的示例性的基板支撐組件500的示意性局部橫截面視圖。基板支撐組件500可類似於先前討論的基板支撐件或基座265，且可包括上文所討論之具有該結構的一些或全部特徵。基板支撐組件500也可類似於基板支撐組件410，且可包括如上所述的一些或全部元件或特性。如圖所示，基板支撐組件500包括頂部定位盤505和桿510。如前所述，頂部定位盤505和桿510兩者可以是或包括陶瓷或介電材料。
頂部定位盤505可限定基板支撐表面506，且可包括內部區域507和外部區域509。內部區域507可從外部區域509凹入且可經配置為在凹入內支撐基板，如前所述。一或多個元件可被嵌入在頂部頂位盤505內。可為RF電極的電極515可被定位成接近或鄰近基板支撐表面506。在一些實施例中，電極515可不徑向向外延伸超過內部區域507，但在一些實施例中，電極可至少部分地延伸到外部區域509中。電極515可與RF源520耦合，RF源520可延伸穿過桿510。例如，RF棒521可延伸穿過內部通道522並與電極515連接，該電極515可用於在基板支撐表面506上方的處理區域中產生偏壓電漿。頂部定位盤505亦可包括加熱器525，該加熱器525可包括如前所述的第一內部加熱器527和第二外部加熱器529，且該加熱器525可加熱頂部定位盤及/或基板，如上所述。應理解的是，如先前所述，可包括任何數量的加熱器，且在一些實施例中可包括至少約2個、至少約4個、至少約6個、至少約8個、至少約10個或更多的加熱器及相關區域。
頂部定位盤505亦可包括如前所述之經嵌入在頂部定位盤內的接地屏蔽件530。在一些實施例中，接地屏蔽件530可以單件或多件設計為特徵。接地屏蔽件530可包括內部區域532和外部區域534或以內部區域532和外部區域534為特徵。內部區域532可跨越頂部定位盤505延伸，且可從中心軸徑向地延伸穿過頂部定位盤。在一些實施例中，內部區域532可延伸超過電極515的徑向邊緣，且可延伸到頂部定位盤505的外部區域509中。可從內部區域532徑向向外佈置外部區域534，且外部區域534可垂直地延伸過頂部定位盤505的高度。例如，在所示的一些實施例中，外部區域534可基本上或實質上垂直於內部區域532延伸，且可部分地或基本上沿著頂部定位盤的高度延伸。因此，接地屏蔽件530可類似於碟形輪廓，該碟形輪廓具有圍繞中央凹入區域的凸起的外表面。接地屏蔽件530可為頂部定位盤內的網格、線圈、實心基座或任何數量的其他外形尺寸。
可在內部區域532中形成中心孔，該中心孔可允許電極RF棒521延伸穿過接地屏蔽件，而無需電接觸屏蔽件。接地屏蔽件530可經由延伸穿過內部通道522並穿過桿510的接地迴路537與接地535耦合。例如，接地迴路537可經由內部通道522與RF棒521同軸延伸，且保持與RF棒521電隔離。在一些實施例中，如圓柱形絕緣體的絕緣體可定位於RF棒521和接地迴路537之間。由於接地屏蔽件530可與接地電耦合，故此種配置可保持電極和接地屏蔽件彼此之間電隔離。
圖 6 示出了根據本技術的一些實施例的示例性的基板支撐組件600的示意性局部橫截面視圖。基板支撐組件600可類似於先前討論的基板支撐件或基座265，且可包括以上討論的該結構的一些或全部特徵。基板支撐組件600也可類似於基板支撐組件410及基板支撐組件500，且可包括如上所述的一些或全部元件或特性。基板支撐組件600可包括本技術所涵蓋的另外的嵌入式接地屏蔽結構。如圖所示，基板支撐組件600包括頂部定位盤605和桿610。如前所述，頂部定位盤605和桿610皆可為或包括陶瓷或介電材料。
頂部定位盤605可限定基板支撐表面606，且可包括內部區域607和外部區域609。內部區域607可從外部區域609凹進且可經配置為在凹進內支撐基板，如前所述。一或多個元件可被嵌入在頂部定位盤605內。可以是RF電極的電極615可被定位成接近或鄰近基板支撐表面606。在一些實施例中，電極615可不徑向向外延伸超過內部區域607，但在一些實施例中，電極可至少部分地延伸到外部區域609中。電極615可與RF源620耦合，RF源620可延伸穿過桿610。例如，RF棒621可延伸穿過內部通道622並與電極615連接，該電極615可用於在基板支撐表面606上方的處理區域中產生偏壓電漿。頂部定位盤605還可包括加熱器625，該加熱器可包括如前所述的第一內部加熱器627和第二外部加熱器629，且加熱器625可加熱頂部定位盤及/或基板，如上所述。
頂部定位盤605亦可包括如前所述之經嵌入在頂部定位盤內的接地屏蔽件630。在一些實施例中，接地屏蔽件630其特徵在於可為單件或多件設計。接地屏蔽件630可包括內部區域632和外部區域634或以內部區域632和外部區域634為特徵。內部區域632可跨越頂部定位盤605延伸，且可從中心軸徑向延伸穿過頂部定位盤，從而形成接地屏蔽件的底部。在一些實施例中，內部區域632可延伸超過電極615的徑向邊緣，且可延伸到頂部定位盤605的外部區域609中。可從內部區域632徑向向外佈置外部區域634，且可垂直地延伸通過頂部定位盤605的高度。例如，在所示的一些實施例中，外部區域634可基本上或實質上垂直於內部區域632延伸，且可部分地或基本上沿著頂部定位盤的高度延伸。外部區域634可與上述的外部區域534不同。儘管圖5接地屏蔽層件可類似於盤狀或淺盤狀輪廓，但接地屏蔽件630可具有連接的元件。
接地屏蔽件630的外部區域634可包括一或多個經由頂部定位盤605的高度垂直分佈的環形構件或環640。例如，接地屏蔽件630可包括至少一個經垂直定位於接地屏蔽基座及電極615之間的中間環640。接地屏蔽件630亦可包括多個環，該多個環經由頂部定位盤的高度垂直佈置或彼此偏移，且該多個環可包括至少2個環、大於或約3個環、大於或約4個環、大於或約6個環、大於或約8個環、大於或約10個環、大於或約15個環或更多個環，這取決於頂部定位盤的高度和環之間的間距。例如，環之間的間距可能會影響排放物的屏蔽量。
RF遞送的頻率也可能影響環之間的間距量。例如，在可在較低頻率操作(如約13.56MHz或更低)產生電漿的情況下，環之間可有更多的空間，而在較高頻率的操作(如60MHz)下，可利用更小的間距來限制通過屏蔽件的排放物。因此，當理解腔室的操作條件時，可使用環之間的間距及/或環的數量來適合應用。因此，隨著應用中頻率的增加，環的數量可增加及/或環之間的間距可減小。在一些實施例中，任何兩個相鄰的環及/或基座之間的間距可小於或約1cm、及可小於或約9mm、小於或約8mm、小於或約7mm、小於約6mm、小於或約5mm、小於或約4mm、小於或約3mm、小於或約2mm，小於或約1mm或以下。
一或多個環640可經由一或多個垂直柱645與基座電耦合。例如，至少一個柱可將一或多個環與基座電耦合以提供接地路徑。在一些實施例中，頂部定位盤可包括至少2個垂直柱，且在一些實施例中可包括大於或約3個柱、大於或約4個柱、大於或約6個柱、大於或約8個柱、大於或約10個柱、大於或約12個柱、大於或約14個柱、大於或約16個柱、大於或約18個柱、大於或約20個柱或更多個柱。柱可圍繞頂部定位盤等距分佈，或可定位在圍繞頂部定位盤的多個區域中，及任何其他分佈。另外，當包括多個環時，在一些實施例中，環的尺寸可相似或不同。例如，環可具有與其他環不同的環形厚度或長度，這可進一步適應不同的電漿頻率，其中增加的表面積或單個環可允許增加環之間的間距或減少環的數量以提供特定的效果。
與基板支撐組件500相似，中心孔或通孔可形成在接地屏蔽件的內部區域632中，這可允許電極RF桿621延伸穿過接地屏蔽件，而無需電接觸屏蔽件。接地屏蔽層630可經由延伸穿過內部通道622並穿過桿610的接地迴路637與接地635耦合。例如，接地迴路637可經由內部通道622與RF棒621同軸延伸，且保持與RF棒621電隔離。因接地屏蔽件630可與接地電耦合，故此種配置可保持電極和接地屏蔽件彼此電隔離。經由利用根據本技術的一些實施例的嵌入式接地屏蔽，可在更高的溫度下執行處理，而沒有化學腐蝕、侵蝕或組成屏蔽元件熔化的風險。
在前文的描述中，出於解釋的目的，已闡述了許多細節以便提供對本技術的各種實施例的理解。然而，對於所屬技術領域中具有通常知識者將顯而易見的是，可在沒有這些細節中的一些或其他細節的情況下實施某些實施例。
已揭露了幾個實施例，所屬技術領域中具有通常知識者將認識到，在不脫離實施例的精神的情況下，可使用各種修改、替代構造和等同物。另外，為了避免不必要地混淆本技術，沒有描述許多眾所皆知的處理和元件。因此，以上描述不應被視為限制本技術的範疇。
在提供值的範圍的情況下，應理解的是，除非上下文另外明確指出，否則亦具體揭露至該範圍的上限和下限之間的單位下限的最小分數的每個中間值。涵蓋在陳述範圍內的任何陳述值或未陳述中間值與該陳述範圍內的任何其他陳述或中間值之間的任何較窄範圍。這些較小範圍的上限和下限可獨立地包含或排除在該範圍內，且每個範圍(其中任一限制包含在較小範圍內、限制皆不包含在較小範圍內、或限制兩者皆包含在較小範圍內)也包括在本技術範圍內，但具有陳述範圍中任何特定排除。在陳述範圍包括一或兩個限制的情況下，亦包括排除那些所包括的限制中的任一者或兩者的範圍。
如本文和所附請求項中所使用的，單數形式的「一」及「該」包括複數引用，除非上下文另外明確指出。因此，例如，對「環」的提及係包括複數個這樣的環，而對「前驅物」的提及係包括對所屬技術領域中具有通常知識者已知的一或多種前驅物及其等同物等等。
此外，當在本說明書和以下請求項中使用時，術語「包括/包含」旨在具體指定所陳述的特徵、整數、元件或操作的存在，但該等術語不排除一或多個其他特徵、整數、元件、操作及動作或組的存在或增加。
100:處理系統 102:前開式晶圓傳送盒（FOUP 104:機械臂 106:低壓保持區域 108a-108f:基板處理腔室 109a-109c:串聯部分 110:第二機械臂 200:處理腔室系統 201:遠端電漿系統（RPS） 203:冷卻板 205:氣體入口組件 210:流體供應系統 215:第一電漿區域 217:面板 219:第一流體通道 220:絕緣環 221:第二流體通道 223:離子抑制器 225:噴淋頭 233:基板處理區域 240:電源 253:詳細視圖 255:基板 258:氣體供應區域 259:孔 265:基板支撐件/基座 325:噴淋頭 365:通孔 375:小孔 400:半導體處理腔室 405:噴淋頭 410:基板支撐組件 415:腔室側壁 420:基板處理區域 425:頂部定位盤 427:基板支撐表面 430:桿 435:電極 440:電源 445:凹入區域 447:外部區域 450:嵌入式加熱器 452:第一加熱器 454:第二加熱器 460:接地屏蔽件 465:接地迴路 470:接地阻抗電極 500:基板支撐組件 505:頂部定位盤 506:基板支撐表面 507:內部區域 509:外部區域 510:桿 515:電極 520:RF源 521:RF棒 522:內部通道 525:加熱器 527:第一內部加熱器 529:第二外部加熱器 530:接地屏蔽件 532:內部區域 534:外部區域 535:接地 537:接地迴路 600:基板支撐組件 605:頂部定位盤 606:基板支撐表面 607:內部區域 609:外部區域 610:桿 615:電極 620:RF源 621:RF棒 622:內部通道 625:加熱器 627:第一內部加熱器 629:第二外部加熱器 630:接地屏蔽件 632:內部區域 634:外部區域 635:接地 637:接地迴路 640:環 645:垂直柱
可藉由參考說明書和附圖的其餘部分來實現對所揭露技術的性質和優勢的進一步理解。
圖1示出了根據本技術的一些實施例的示例性處理系統的俯視圖。
圖2A示出了根據本技術的一些實施例的示例性處理腔室的示意性截面圖。
圖2B示出了根據本技術的一些實施例的示例性噴淋頭的詳細視圖。
圖3示出了根據本技術的一些實施例的示例性噴淋頭的底部平面圖。
圖4示出了根據本技術的一些實施例的示例性半導體處理腔室的示意性局部截面圖。
圖5示出了根據本技術的一些實施例的示例性基板支撐組件的示意性局部剖視圖。
圖6示出了根據本技術的一些實施例的示例性基板支撐組件的示意性局部剖視圖。
其中一些附圖是示意圖。應當理解，附圖僅用於說明目的，除非特別說明是按比例繪製的，否則不應視為按比例繪製的。另外，作為示意圖，提供了附圖以幫助理解；且與實際表示相比，附圖可能不包括所有態樣或資訊；且出於說明目的，附圖可能包括誇示的材料。
在附圖中，相似的元件及/或特徵可具有相同的元件符號。此外，相同類型的各種元件可藉由在元件符號後面加上一個在相似組件之間進行區分的字母來進行區分。若在說明書中僅使用第一元件符號，則描述適用於具有相同的第一元件符號的任何類似元件，而與字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
400:半導體處理腔室
405:噴淋頭
410:基板支撐組件
415:腔室側壁
420:基板處理區域
425:頂部定位盤
427:基板支撐表面
430:桿
435:電極
440:電源
445:凹入區域
447:外部區域
450:嵌入式加熱器
452:第一加熱器
454:第二加熱器
460:接地屏蔽件
465:接地迴路

Claims (17)

  1. 一種基板支撐組件，包括：一頂部定位盤，該頂部定位盤限定一基板支撐表面，其中該頂部定位盤的特徵在於一高度；一RF電極，該RF電極經嵌入在靠近該基板支撐表面的該頂部定位盤內；一加熱器，該加熱器經嵌入在該頂部定位盤內；及一接地屏蔽件，該接地屏蔽件經嵌入在該頂部定位盤內，其中該接地屏蔽件的特徵在於一內部區域徑向延伸穿過該頂部定位盤，其中該接地屏蔽件的特徵進一步在於一外部區域垂直於該內部區域延伸，其中該接地屏蔽件的該外部區域至少部分地垂直地延伸穿過該頂部定位盤的該高度，及其中該外部區域圍繞該頂部定位盤以該頂部定位盤內的一半徑延伸。
  2. 如請求項1所述的基板支撐組件，其中該頂部定位盤在該基板支撐表面內限定一凹部，該凹部經配置成容納用於處理的一基板。
  3. 如請求項1所述的基板支撐組件，其中該頂部定位盤包括一陶瓷材料。
  4. 如請求項1所述的基板支撐組件，其中該加熱器位於該RF電極與該接地屏蔽件之間的該頂部定位盤內。
  5. 如請求項4所述的基板支撐組件，其中該加熱器被配置成將由該頂部定位盤支撐的一基板加熱至大於或約300℃的一溫度。
  6. 如請求項4所述的基板支撐組件，其中該加熱器包括一第一加熱器和一第二加熱器，其中該第二加熱器可與該第一加熱器分開控制，且其中該第二加熱器圍繞該第一加熱器的一外邊緣延伸。
  7. 如請求項1所述的基板支撐組件，進一步包括一桿，該桿在該頂部定位盤之與該基板支撐表面相對的一第二表面上與該頂部定位盤耦接，其中該桿限定了一內部通道，一RF棒延伸通過該內部通道並與該RF電極連接。
  8. 如請求項7所述的基板支撐組件，進一步包括一接地迴路，該接地迴路與該RF棒同軸地延伸穿過該內部通道。
  9. 如請求項1所述的基板支撐組件，進一步包括一接地阻抗電極，該接地阻抗電極經設置在靠近該基板支撐表面的該頂部定位盤內。
  10. 一種基板支撐組件，包括：一頂部定位盤，該頂部定位盤限定了一基板支撐表面及以一高度為特徵；一桿，該桿與在與該頂部定位盤之與該基板支撐表 面相對的一第二表面上的該頂部定位盤耦接；一RF電極，該RF電極經嵌入在靠近該基板支撐表面的該頂部定位盤內；一加熱器，該加熱器經嵌入在該頂部定位盤中；及一接地屏蔽件，該接地屏蔽件經嵌入在該頂部定位盤內，其中該接地屏蔽件包括徑向延伸穿過該頂部定位盤的一基座，其中該接地屏蔽件進一步包括在該接地屏蔽件基座和該RF電極之間經垂直定位的複數個中間環，其中該複數個中間環在該頂部定位盤內彼此垂直偏移，其中該複數個中間環中的每個中間環位於該頂部定位盤內的一相鄰環的1cm之內，及其中該複數個中間環與該基座電耦合。
  11. 如請求項10所述的基板支撐組件，其中該頂部定位盤在該基板支撐表面內限定一凹部，該凹部經配置成容納用於處理的一基板。
  12. 如請求項10所述的基板支撐組件，其中該頂部定位盤和該桿包括一陶瓷材料。
  13. 如請求項10所述的基板支撐組件，其中該加熱器位於該RF電極與該接地屏蔽件之間的該頂部定位盤內。
  14. 如請求項13所述的基板支撐組件，其中該加熱器經配置為將由該頂部定位盤支撐的一基板加熱 到大於或約300℃的一溫度。
  15. 如請求項13所述的基板支撐組件，其中該加熱器包括一第一加熱器和一第二加熱器，其中該第二加熱器可與該第一加熱器分開控制，且其中該第二加熱器圍繞該第一加熱器的一外邊緣延伸。
  16. 如請求項10所述的基板支撐組件，進一步包含一接地阻抗電極，該接地阻抗電極經設置在靠近該基板支撐表面的該頂部定位盤內，其中該接地阻抗電極沿著與該接地屏蔽件分開的一接地路徑與接地耦合。
  17. 如請求項10所述的基板支撐組件，進一步包含一導電柱，該導電柱在該頂部定位盤內垂直延伸且將該接地屏蔽件的該中間環與該接地屏蔽件的該底部電耦合。
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