TWI574345B - 靜電夾盤 - Google Patents
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- H—ELECTRICITY
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Description
本發明的實施例大體上關於半導體的處理。
發明人已觀察到,用於在電漿處理腔室(例如蝕刻腔室)中固定基材的習知靜電夾盤可能會於基材邊緣附近產生製程的不均勻。這樣的製程不均勻一般是因用於製造靜電夾盤的部件(例如處理套組)的材料與基材的電性質與熱性質有所差異而引發。再者,發明人已觀察到,習知的靜電夾盤一般在基材上方產生不均勻的電磁場,該不均勻的電磁場引發待形成的電漿具有一種電漿鞘(plasma sheath),該電漿鞘於基材邊緣附近朝向基材偏折(bend)。發明人已進一步發現,此般電漿鞘的偏折導致轟擊基材的離子軌道(trajectory)在基材邊緣附近相較於基材中央有所差異,因而引發基材的不均勻蝕刻,故影響整體臨界尺寸的均勻性。
因此,發明人已提供一種改良的靜電夾盤。
在此提供靜電夾盤的實施例。在一些實施例中,一種用於支撐與保持具有給定寬度的基材的靜電夾盤可包括:介電構件,具有支撐表面,該支撐表面設置以支撐
具有給定寬度的基材;電極,配置在該介電構件內位於該支撐表面下方,並且從該介電構件的中心向外延伸至超過該基材的外周邊的區域,該外周邊由該基材之該給定寬度所界定;RF電源,耦接該電極;以及DC電源,耦接該電極。
一些實施例中,一種用於支撐與保持具有給定寬度的基材的靜電夾盤可包括:第一電極,配置在靜電夾盤的介電構件內且通過中央軸線,該中央軸線垂直該靜電夾盤的支撐表面;第二電極,配置在該介電構件內並且配置成至少部分位在該第一電極的徑向上外側處,其中該第二電極徑向向外延伸至超過該基材的外周邊的區域,該外周邊由該基材之該給定寬度所界定;各耦接該第一電極的RF電源與DC電源;以及耦接該第二電極的RF電源。
下文中描述本發明的其他與進一步之實施例。
本發明的實施例提供用於處理基材的靜電夾盤。本發明之靜電夾盤可有利地助於在電漿處理製程(例如蝕刻製程)期間於配置在靜電夾盤頂上的基材上方產生均勻的電磁場,從而減少或消除基材上方形成的電漿之電漿鞘的偏折,故防止基材的不均勻蝕刻。本發明的靜電夾盤可進一步有利地在基材邊緣附近提供均勻的溫度梯
度,因此減少與溫度相關的製程不均勻,並且相較於習知上所用的靜電夾盤提供改良的臨界尺寸均勻性。發明人已觀察到本發明的設備在許多應用中特別實用,這些應用諸如32nm節點技術(及以下)的元件之製造上所用的蝕刻製程的腔室,該蝕刻製程例如矽或導體蝕刻製程或類似製程,該些應用或諸如為圖案化製程,例如雙重圖案化或多重應用,但範疇非以此為限。
第1圖描繪根據本發明一些實施例的具有靜電夾盤的說明性處理腔室100。該處理腔室100可包含腔室主體102,該腔室主體102具有基材支座108,該基材支座108包含靜電夾盤109以保持基材110且在一些實施例中施授溫度分佈曲線給予基材110。示範性處理腔室可包括DPS®、ENABLER®、SIGMATM、ADVANTEDGETM、或類似處理腔室,這些腔室可購自美國加州的Santa Clara的應用材料公司。應考慮其他適合的腔室可合適地根據在此提供的教示進行修飾,所述其他適合的腔室包括購自其他販售商的腔室。雖然將處理腔室100描述成具有特殊配置方式,然而此述的靜電夾盤也可用在具有其他配置方式的處理腔室中。
腔室主體102具有內部空間107,該內部空間可包括處理空間104與排放空間106。該處理空間104可被界定在例如基材支座108與一或更多個氣體入口之間,該基材支座108配置在該處理腔室100內,用於在處理期間於該基材支座108上支撐基材110,該一或更多個氣
體入口諸如為噴頭114及/或噴嘴,設置在期望的位置處。
基材110可經由腔室主體102的壁中的開口112進入處理腔室100。該開口112可經由狹縫閥118或其他機構選擇性密封,以選擇性提供穿過開口112進出處理腔室100之內部。基材支座108可耦接舉升機構134,該舉升機構134可將基材支座108的位置控制在下方位置(如圖所示)及可選擇的上方位置之間,該下方位置適合用於將基材經由開口112傳送進出腔室,而該上方位置適合用於處理。該處理位置可經選擇以使用於特定處理步驟的製程均勻性最大化。當在升高的處理位置的至少一者時,基材支座108可配置在開口112上方以提供對稱的處理區域。
該一或更多個氣體入口(例如噴頭114)可耦接氣體供應器116,以提供一或更多個處理氣體進入處理腔室100的處理空間104。儘管第1圖中顯示噴頭114,然而可設置額外或替代的氣體入口,諸如配置在頂壁142中或在處理腔室100側壁上的噴嘴或入口,或者該噴嘴或入口位在適合提供期望中的氣體至處理腔室100的其他位置,所述其他位置諸如處理腔室的基座、基材支座的周邊、或類似位置。
一或更多個電漿電源(圖中顯示一個RF電源148)可耦接處理腔室100以經由一或更多個各別的匹配網絡(圖中顯示一個匹配網絡146)供應RF功率給上電極(例如噴頭114)。在一些實施例中,該處理腔室100可利用
感應耦合的RF功率以供處理。例如,處理腔室102可具有由介電材料製成的頂壁142以及介電噴頭114。該頂壁142可實質上平坦,雖然也可利用其他類型的頂壁,諸如圓頂形狀的頂壁或類似物。一些實施例中,包含至少一個感應線圈元件的天線(圖中未示)可配置在頂壁142上方。該感應線圈元件透過一或更多個各別的匹配網絡(例如匹配網絡146)耦接一或更多個RF電源(例如RF電源148)。該一或更多個電漿電源能夠產生多達5000W的功率,頻率為約2MHz及/或約13.56MHz(或更高頻率,諸如27MHz及/或60MHz)。一些實施例中,兩個RF電源可透過各別的匹配網絡耦接感應線圈元件,以提供頻率為例如約2MHz與約13.56MHz的RF功率。
排放空間106可被界定在例如基材支座108與處理腔室100的底部之間。該排放空間106可流體連通式耦接排放系統120,或可視為排放系統120的一部分。該排放系統120大體上包括泵送氣室124與一或更多個導管,該導管將泵送氣室124耦接處理腔室100的內部空間(且大體上耦接該排放空間106)。
每一導管具有耦接內部空間107(或在一些實施例中,為排放空間106)的入口122以及流體連通式耦接泵送氣室124的出口(圖中未示)。例如,每一導管可具有一入口122,該入口配置在處理腔室100的底壁或側壁的下方區域。一些實施例中,該等入口實質上彼此之間等
距相隔。
真空泵128可經由泵送通口126耦接泵送氣室124,以將排放氣體從處理腔室100泵送而出。該真空泵128可流體連通式耦接排放出口132,以如所需般發送排放氣體至適當的排放物處理設備。閥130(例如閘閥或類似物)可配置在泵送氣室124中,以結合真空泵128的操作助於控制排放氣體的流速。雖然圖中顯示z方向運動的閘閥,然而可利用任何適合的、與製程相容的閥控制排放氣體的流動。
一些實施例中,基材支座108可包括處理套組113,該處理套組113包含例如配置在基材支座108頂上的邊緣環111。存在邊緣環111時,該邊緣環111可將基材110固定在適合的位置以供處理及/或可保護底下的基材支座108以免在處理期間受損。該邊緣環111可包含適合固定基材110及/或保護基材支座108同時抵抗劣化的任何材料,該劣化是由於處理期間處理腔室100內產生的環境所致。例如,一些實施例中,該邊緣環111可包含石英(SiO2)。
一些實施例中,基材支座108可包括多個機構,該等機構用於控制基材溫度(諸如加熱及/或冷卻裝置)及/或用於控制基材表面附近的物種通量及/或離子能量。例如,一些實施例中,基材支座108可包括加熱器117(例如電阻式加熱器),該加熱器117由電源119供給電力,以助於控制基材支座108的溫度。在此實施例中,加熱
器117可包含多個區塊,該等區塊可獨立操作以提供橫越基材支座108上選擇性的溫度控制。
一些實施例中,基材支座108可包含一種機構,該機構保持或支撐基材110於基材支座108表面上,該機構諸如為靜電夾盤109。例如,在一些實施例中,該基材支座108可包括電極140。在一些實施例中,該電極140(例如導電篩(conductive mesh))可耦接一或更多個電源。例如,電極140可耦接夾持電源137,該夾持電源137諸如為DC或AC的電源供應器。一些實施例中,電極140(或基材支座中不同的電極)可透過匹配網絡136耦接偏壓電源138。一些實施例中,電極140可嵌在靜電夾盤109的一部分中。例如,靜電夾盤109可包含介電構件,該介電構件具有支撐表面,用於支撐具有給定寬度的基材,該給定寬度例如為200mm、300mm、或其他經設計尺寸的矽晶圓或其他基材。在基材為圓形的實施例中,該介電構件可以是碟的形式或圓盤(puck)(介電構件)202,諸如第2圖中所示。圓盤202可被板216支撐,該板216配置在基材支撐底座210頂上。一些實施例中,基材支撐底座210可包含導管212,該導管設置以使製程資源(例如RF或DC功率)發送到靜電夾盤109。圓盤202可包含任何適合用於半導體處理的絕緣材料,例如陶瓷,該陶瓷諸如鋁土(Al2O3)、氮化矽(SiN)、或類似物。
發明人已經觀察到,具有處理套組(例如前述的邊緣
環)的習知上所使用的基材支座中,製程的不均勻可能會於處理期間發生在接近基材邊緣處,這是由於用於製造處理套組與基材的材料在電性質與熱性質上有所差異所致。再者,發明人已觀察到,用在電漿處理腔室(例如蝕刻腔室)中的習知靜電夾盤一般不會延伸超過配置在靜電夾盤上的基材的邊緣。然而,發明人已發現,由於靜電夾盤不延伸超過基材邊緣,故該靜電夾盤在基材上方產生的電磁場會引發待形成於基材上方的電漿具有在基材邊緣附近朝基材偏折的電漿鞘。此般電漿鞘的偏折導致轟擊基材的離子軌道在基材邊緣附近之處相較於在基材中央處有所差異,因而引發基材的不均勻蝕刻,故影響整體臨界尺寸的均勻性。
因此,在一些實施例中,靜電夾盤109的電極140可從圓盤202的中心或中心軸線211延伸至超過基材110的邊緣204的一區域213。發明人已經觀察到,透過延伸電極(導電篩)140超過基材110的邊緣204,可在基材110上方產生更均勻的電磁場,因此減少或消除電漿鞘的偏折(如前文所述),故限制或防止基材110的不均勻蝕刻。電極140可延伸超過基材110的邊緣任何適當距離,該距離適於提供如前文所述之更均勻的電磁場,該距離例如為從低於約一毫米至數十毫米。一些實施例中,電極140可延伸於處理套組113下方。
一些實施例中,可將兩個或更多個電源(例如DC電源206與RF電源208)耦接電極140。在這樣的實施例
中,DC電源206可提供夾持功率,以助於將基材110固定在靜電夾盤109頂上,而RF電源208可提供處理功率(例如偏壓功率)給基材110,以助於在蝕刻製程中引導離子朝向基材110。此為說明性質,在一些實施例中,RF電源可提供多達約12000W的功率,而頻率為多達約60MHz,或者在一些實施例中,頻率為約400kHz,或在一些實施例中,頻率為約2MHz,或在一些實施例中,頻率為約13.56MHz。
以替代之方式(或以結合之方式),在一些實施例中,層215可配置在邊緣環111頂上。當存在該層215時,該層215的導熱率可類似基材110的導熱率,因而提供基材110之邊緣附近的更均勻的溫度梯度,故進一步減少製程的不均勻(例如,上文所討論的不均勻)。該層215可包含任何具有與特定處理環境(例如蝕刻環境)相容的前述導熱率之材料。例如,一些實施例中,層215可包含碳化矽(SiC)、受摻雜的鑽石(例如摻雜有硼的鑽石)、或類似物。在層215包含受摻雜的材料(例如,受摻雜的鑽石)的實施例中,發明人已觀察到,可變化摻質的量,以控制層215的導電率。透過控制層215的導電率,可在基材110上方產生更均勻的電磁場,因此減少或消除電漿鞘的偏折,因而限制或防止基材110的不均勻蝕刻(如前文所述)。
一些實施例中,靜電夾盤109可包含配置在圓盤202內的兩個分別的電極(例如,圖中顯示電極140與第二
電極(導電篩)304),如第3圖所示。該第二電極304可由與電極140相同的材料所製造,或在一些實施例中,可由與電極140相異的材料所製造。此外,第二電極304可具有與電極140相同的密度,或在一些實施例中,具有與電極140相異的密度。一些實施例中,第二電極304可被配置成使得基材110至第二電極304的距離306與基材110至電極140的距離308相同或相異。
一些實施例中,第二電源302可耦接第二電極304,以提供功率給第二電極304。第二電源302可以是RF電源或DC電源。在第二電源302是RF電源的實施例中,第二電源302可提供適合執行期望製程的任何頻率的任何RF功率量,例如前文所討論的功率與頻率。透過設置第二電源302,發明人已發現,可在基材110上方產生更均勻的電磁場(如前文所述),因此減少或消除電漿鞘的偏折(如前文所述),因而限制或防止基材110的不均勻蝕刻。
或者,在一些實施例中,第二電極304可由用於供給電力給電極140的相同的電源(例如電源206、208)供給電力,如第4圖中所示。在此實施例中,可變電容器或分路(divider circuit)(顯示於402)可配置在電源206、208與第二電極304之間,以助於選擇性提供功率給額外電極。
因此,在此已提供一種靜電夾盤。本發明的靜電夾盤的實施例可有利地提供一種靜電夾盤,該靜電夾盤能夠
在電漿處理製程(例如蝕刻製程)期間於配置在靜電夾盤頂上的基材上方產生更均勻的電磁場,從而減少或消除基材上方形成的電漿之電漿鞘的偏折,故減少或防止基材的不均勻蝕刻。本發明的靜電夾盤可進一步有利地在基材邊緣附近提供更均勻的溫度梯度,因此減少製程的不均勻,並且相較於習知上所用的靜電夾盤提供改良的臨界尺寸的均勻性。
雖然前述內容涉及本發明之實施例,然而可不背離本發明基本範疇設計其他與進一步的本發明之實施例。
100‧‧‧處理腔室
102‧‧‧腔室主體
104‧‧‧處理空間
107‧‧‧內部空間
106‧‧‧排放空間
108‧‧‧基材支座
109‧‧‧靜電夾盤
110‧‧‧基材
111‧‧‧邊緣環
112‧‧‧開口
113‧‧‧處理套組
114‧‧‧噴頭
116‧‧‧氣體供應器
117‧‧‧加熱器
118‧‧‧狹縫閥
119‧‧‧電源
120‧‧‧排放系統
122‧‧‧入口
124‧‧‧泵送氣室
126‧‧‧泵送通口
128‧‧‧真空泵
130‧‧‧閥
132‧‧‧排放出口
134‧‧‧舉升機構
136‧‧‧匹配網絡
137‧‧‧夾持電源
138‧‧‧偏壓電源
140‧‧‧電極
142‧‧‧頂壁
146‧‧‧匹配網絡
148‧‧‧RF電源
202‧‧‧圓盤
204‧‧‧邊緣
206‧‧‧DC電源
208‧‧‧RF電源
210‧‧‧基材支撐基座
211‧‧‧中心軸線
212‧‧‧導管
213‧‧‧區域
215‧‧‧層
216‧‧‧板
302‧‧‧第二電源
304‧‧‧第二電極
306‧‧‧距離
308‧‧‧距離
402‧‧‧可變電容器或分路
藉由參考描繪於附圖中的本發明之說明性實施例,能瞭解於【發明內容】中簡要總結及於【實施方式】中更詳細討論的本發明之實施例。然而應注意附圖僅說明此發明的典型實施例,因而不應將該等附圖視為限制本發明之範疇,因為本發明可容許其他等效實施例。
第1圖是根據本發明一些實施例適合與本發明的靜電夾盤一併使用的處理腔室。
第2圖至第4圖個別描繪根據本發明一些實施例的靜電夾盤。
為了助於瞭解,如可能則使用相同的元件符號標注共通於該等圖式的相同元件。該等圖式並未按照比例尺繪製,且可為了清楚起見而經過簡化。應考量一個實施例
的元件與特徵可有利地結合於其他實施例,而無需進一步記載。
109‧‧‧靜電夾盤
110‧‧‧基材
113‧‧‧處理套組
140‧‧‧電極
202‧‧‧圓盤
204‧‧‧邊緣
206‧‧‧DC電源
208‧‧‧RF電源
210‧‧‧基材支撐基座
211‧‧‧中心軸線
212‧‧‧導管
213‧‧‧區域
215‧‧‧層
216‧‧‧板
Claims (19)
- 一種用於支撐與保持具有一給定寬度的一基材的靜電夾盤,包含:一介電構件,具有一支撐表面,該支撐表面設置以支撐具有一給定寬度的一基材;一單一電極,配置在該介電構件內位於該支撐表面下方,且在與該支撐表面實質上平行的一平面中,並且該單一電極從該介電構件的一中心向外延伸至超過該基材的一外周邊的一區域,該外周邊係由該基材之該給定寬度所界定;一RF電源,耦接該電極;以及一DC電源,耦接該電極。
- 如請求項1所述之靜電夾盤,其中該介電構件由鋁土(Al2O3)或氮化矽(SiN)所製造。
- 如請求項1所述之靜電夾盤,進一步包含:一處理套組,配置在該靜電夾盤頂上,以覆蓋該介電構件的多個部分,並且該處理套組具有一中央開口,該中央開口對應該支撐表面;以及一導熱層,配置在該處理套組頂上,其中該導熱層具有一導熱率,該導熱率實質上類似於待處理之一基材的一導熱率。
- 如請求項3所述之靜電夾盤,其中該處理套組由氧化矽(SiO2)所製造。
- 如請求項3所述之靜電夾盤,其中該導熱層包含受摻雜的鑽石。
- 如請求項3所述之靜電夾盤,其中該電極延伸至該處理套組下方的一區域。
- 如請求項1至請求項6之任一項所述之靜電夾盤,其中該電極是一導電篩。
- 如請求項1至請求項6之任一項所述之靜電夾盤,進一步包含:一板,配置在該介電構件下方,以支撐該介電構件;以及一支撐底座,配置在該板下方,以支撐該板,該底座具有一導管,該導管配置在該底座內,其中該導管設置以使該RF電源與該DC電源得以耦接該電極。
- 一種用於支撐與保持具有一給定寬度的一基材的靜電夾盤,包含:一第一電極,配置在一靜電夾盤的一介電構件內 且通過一中央軸線,該中央軸線垂直該靜電夾盤的一支撐表面;一第二電極,配置在該介電構件內並且配置成至少部分位在該第一電極的徑向上外側處,其中該第二電極徑向向外延伸至超過該基材的一外周邊的一區域,該外周邊係由該基材之該給定寬度所界定,且其中該第二電極佈置於一平面中,該平面位於實質上與該第一電極相同或比該第一電極更靠近該支撐表面之一者的位置;各自耦接該第一電極的一第一RF電源與一DC電源;以及耦接該第二電極的一第二RF電源,其中該第一RF電源及該第二RF電源為不同的電源,且可獨立地控制。
- 如請求項9所述之靜電夾盤,其中該第一電極延伸至該基材之一邊緣附近的一區域。
- 如請求項9所述之靜電夾盤,其中該介電構件由鋁土(Al2O3)或氮化矽(SiN)所製造。
- 如請求項9至請求項11之任一項所述之靜電夾盤,進一步包含:一處理套組,配置在該靜電夾盤頂上,以覆蓋該 介電構件的多個部分,並且該處理套組具有一中央開口,該中央開口對應該支撐表面;以及一導熱層,配置在該處理套組頂上,其中該導熱層具有一導熱率,該導熱率實質上類似於待處理之一基材的一導熱率。
- 如請求項12所述之靜電夾盤,其中該處理套組由氧化矽(SiO2)所製造。
- 如請求項12所述之靜電夾盤,其中該導熱層包含碳化矽(SiC)或受摻雜的鑽石。
- 如請求項12所述之靜電夾盤,其中該第二電極延伸至該處理套組下方的一區域。
- 如請求項9至請求項11之任一項所述之靜電夾盤,其中該第一電極或該第二電極之至少一者是一導電篩。
- 如請求項9至請求項11之任一項所述之靜電夾盤,進一步包含:一板,配置在該介電構件下方,以支撐該介電構件;以及一支撐底座,配置在該板下方,以支撐該板,該 底座具有一導管,該導管配置在該底座內,其中該導管設置以使該RF電源與該DC電源得以耦接該電極。
- 一種用於支撐與保持具有一給定寬度的一基材的靜電夾盤,包含:一第一電極,配置在一靜電夾盤的一介電構件內且通過一中央軸線,該中央軸線垂直該靜電夾盤的一支撐表面;一第二電極,配置在該介電構件內並且配置成至少部分位在該第一電極的徑向上外側處,其中該第二電極徑向向外延伸至超過該基材的一外周邊的一區域,該外周邊係由該基材之該給定寬度所界定,且其中該第二電極佈置於比該第一電極更靠近該支撐表面的一平面;一RF電源,該RF電源耦接該第一電極及該第二電極;以及一DC電源,該DC電源耦接該第一電極。
- 如請求項18所述之靜電夾盤,進一步包含一可變電容器或分路,以選擇性將自該RF電源所遞送的該RF功率分配(divide)至該第一電極與該第二電極。
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- 2012-10-17 KR KR1020147014245A patent/KR102115745B1/ko active IP Right Grant
- 2012-10-17 CN CN201280051925.8A patent/CN103890928B/zh active Active
- 2012-10-17 JP JP2014538840A patent/JP6154390B2/ja active Active
- 2012-10-17 WO PCT/US2012/060682 patent/WO2013062833A1/en active Application Filing
- 2012-10-24 TW TW101139305A patent/TWI574345B/zh active
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Also Published As
Publication number | Publication date |
---|---|
KR102115745B1 (ko) | 2020-05-27 |
CN103890928A (zh) | 2014-06-25 |
JP6154390B2 (ja) | 2017-06-28 |
KR20140088583A (ko) | 2014-07-10 |
US20130107415A1 (en) | 2013-05-02 |
JP2015501546A (ja) | 2015-01-15 |
WO2013062833A1 (en) | 2013-05-02 |
CN103890928B (zh) | 2017-11-21 |
TW201320235A (zh) | 2013-05-16 |
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