CN103890928A - 静电夹盘 - Google Patents
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Abstract
在此提供静电夹盘的实施例。在一些实施例中,一种用于支撑与保持具有给定宽度的基板的静电夹盘可包括:介电构件,具有支撑表面,该支撑表面被配置成支撑具有给定宽度的基板;电极,设置在该介电构件内位于该支撑表面下方,并且从该介电构件的中心向外延伸至超过该基板的外周边的区域,该外周边由该基板的该给定宽度所界定;RF电源,耦接该电极;以及DC电源,耦接该电极。
Description
技术领域
本发明的实施例大体上关于半导体的处理。
背景技术
发明人已观察到,用于在等离子体处理腔室(例如蚀刻腔室)中固定基板的习知静电夹盘可能会于基板边缘附近产生工艺的不均匀。这样的工艺不均匀一般是因用于制造静电夹盘的部件(例如处理套组)的材料与基板的电性质与热性质有所差异而引发。再者,发明人已观察到,习知的静电夹盘一般在基板上方产生不均匀的电磁场,该不均匀的电磁场引发待形成的等离子体具有一种等离子体鞘(plasmasheath),该等离子体鞘于基板边缘附近朝向基板偏折(bend)。发明人已进一步发现,此般等离子体鞘的偏折导致轰击基板的离子轨道(trajectory)在基板边缘附近相较于基板中央有所差异,因而引发基板的不均匀蚀刻,故影响整体临界尺寸的均匀性。
因此,发明人已提供一种改良的静电夹盘。
发明内容
在此提供静电夹盘的实施例。在一些实施例中,一种用于支撑与保持具有给定宽度的基板的静电夹盘可包括:介电构件,具有支撑表面,该支撑表面被配置成支撑具有给定宽度的基板;电极,设置在该介电构件内位于该支撑表面下方,并且从该介电构件的中心向外延伸至超过该基板的外周边的区域,该外周边由该基板的该给定宽度所界定;RF电源,耦接该电极;以及DC电源,耦接该电极。
一些实施例中,一种用于支撑与保持具有给定宽度的基板的静电夹盘可包括:第一电极,设置在静电夹盘的介电构件内且通过中央轴线,该中央轴线垂直该静电夹盘的支撑表面;第二电极,设置在该介电构件内并且至少部分位在该第一电极的径向上外侧处,其中该第二电极径向向外延伸至超过该基板的外周边的区域,该外周边由该基板的该给定宽度所界定;各耦接该第一电极的RF电源与DC电源;以及耦接该第二电极的RF电源。
下文中描述本发明的其他与进一步的实施例。
附图说明
通过参考描绘于附图中的本发明的说明性实施例,能了解于上文中简要总结及于下文中更详细讨论的本发明的实施例。然而应注意附图仅说明此发明的典型实施例,因而不应将这些附图视为限制本发明的范畴,因为本发明可容许其他等效实施例。
图1是根据本发明一些实施例适合与本发明的静电夹盘一并使用的处理腔室。
图2至图4分别描绘根据本发明一些实施例的静电夹盘。
为了助于理解,如可能则使用相同的元件符号标注共通于这些附图的相同元件。这些附图并未按照比例尺绘制,且可为了清楚起见而经过简化。应考量一个实施例的元件与特征可有利地结合于其他实施例,而无需进一步记载。
具体实施方式
本发明的实施例提供用于处理基板的静电夹盘。本发明的静电夹盘可有利地助于在等离子体处理工艺(例如蚀刻工艺)期间于设置在静电夹盘顶上的基板上方产生均匀的电磁场,从而减少或消除基板上方形成的等离子体的等离子体鞘的偏折,故防止基板的不均匀蚀刻。本发明的静电夹盘可进一步有利地在基板边缘附近提供均匀的温度梯度,因此减少与温度相关的工艺不均匀,并且相较于习知上所用的静电夹盘提供改良的临界尺寸均匀性。发明人已观察到本发明的设备在许多应用中特别实用,这些应用诸如32nm节点技术(及以下)的器件的制造上所用的蚀刻工艺腔室,该蚀刻工艺例如硅或导体蚀刻工艺或类似工艺,该些应用或诸如为图案化工艺,例如双重图案化或多重应用,但范畴非以此为限。
图1描绘根据本发明一些实施例的具有静电夹盘的说明性处理腔室100。该处理腔室100可包含腔室主体102,该腔室主体102具有基板支撑件108,该基板支撑件108包含静电夹盘109以保持基板110且在一些实施例中将温度分布曲线赋予基板110。示范性处理腔室可包括、、SIGMATM、ADVANTEDGETM、或类似处理腔室,这些腔室可购自美国加州的圣克拉拉的应用材料公司。应考虑其他适合的腔室可合适地根据在此提供的教示进行修饰,所述其他适合的腔室包括购自其他制造商的腔室。虽然将处理腔室100描述成具有特殊配置方式,然而此述的静电夹盘也可用在具有其他配置方式的处理腔室中。
腔室主体102具有内部容积107,该内部容积可包括处理容积104与排放容积106。该处理容积104可被界定在例如基板支撑件108与一或更多个气体入口之间,该基板支撑件108设置在该处理腔室102内,用于在处理期间于该基板支撑件108上支撑基板110,该一或更多个气体入口诸如设置在期望的位置处的喷头114及/或喷嘴。
基板110可经由腔室主体102的壁中的开口112进入处理腔室100。该开口112可经由狭缝阀118或其他机构选择性密封,以选择性提供穿过开口112进出处理腔室100的内部。基板支撑件108可耦接举升机构134,该举升机构134可将基板支撑件108的位置控制在下方位置(如图所示)及可选择的上方位置之间,该下方位置适合用于将基板经由开口112传送进出腔室,而该上方位置适合用于处理。该处理位置可经选择以使用于特定处理步骤的工艺均匀性最大化。当在升高的处理位置的至少一个时,基板支撑件108可设置在开口112上方以提供对称的处理区域。
该一或更多个气体入口(例如喷头114)可耦接气体供应器116,以提供一或更多个处理气体进入处理腔室102的处理容积104。尽管图1中显示喷头114,然而可设置额外或替代的气体入口,诸如设置在顶壁142中或在处理腔室102侧壁上的喷嘴或入口,或者该喷嘴或入口位在适合将期望中的气体提供至处理腔室102的其他位置,所述其他位置诸如处理腔室的基座、基板支撑件的周边、或类似位置。
一或更多个等离子体电源(图中显示一个RF电源148)可耦接处理腔室102以经由一或更多个各别的匹配网络(图中显示一个匹配网络146)供应RF功率给上电极(例如喷头114)。在一些实施例中,该处理腔室100可利用感应耦合的RF功率以供处理。例如,处理腔室102可具有由介电材料制成的顶壁142以及介电喷头114。该顶壁142可实质上平坦,虽然也可利用其他类型的顶壁,诸如圆顶形状的顶壁或类似物。一些实施例中,包含至少一个感应线圈元件的天线(图中未示)可设置在顶壁142上方。该感应线圈元件透过一或更多个各别的匹配网络(例如匹配网络146)耦接一或更多个RF电源(例如RF电源148)。该一或更多个等离子体源能够以约2MHz及/或约13.56MHz或更高频率(诸如27MHz及/或60MHz)的频率产生高达5000W的功率。一些实施例中,两个RF电源可透过各别的匹配网络耦接感应线圈元件,以提供频率为例如约2MHz与约13.56MHz的RF功率。
排放容积106可被界定在例如基板支撑件108与处理腔室102的底部之间。该排放容积106可流体地耦接排放系统120,或可视为排放系统120的一部分。该排放系统120大体上包括泵送气室124与一或更多个导管,该导管将泵送气室124耦接处理腔室102的内部容积107(且大体上耦接该排放容积104)。
每一导管具有耦接内部容积107(或在一些实施例中,为排放容积106)的入口122以及流体地耦接泵送气室124的出口(图中未示)。例如,每一导管可具有一入口122,该入口设置在处理腔室102的底壁或侧壁的下方区域。一些实施例中,这些入口彼此之间实质上等距相隔。
真空泵128可经由泵送端口126耦接泵送气室124,以将排放气体从处理腔室102泵送而出。真空泵128可流体地耦接排放出口132,以如所需将排放物传送至适当的排放物处理设备。阀130(例如闸阀或类似物)可设置在泵送气室124中,以结合真空泵128的操作助于控制排放气体的流速。虽然图中显示z方向运动的闸阀,然而可利用任何适合的、与工艺相容的阀来控制排放物的流动。
一些实施例中,基板支撑件108可包括处理套组113,该处理套组113包含例如配置在基板支撑件108顶上的边缘环111。存在边缘环111时,该边缘环111可将基板110固定在适合的位置以供处理及/或可保护底下的基板支撑件108以免在处理期间受损。该边缘环111可包含适合固定基板110及/或保护基板支撑件108同时抵抗劣化的任何材料,该劣化是由于处理期间处理腔室100内产生的环境所致。例如,一些实施例中,该边缘环111可包含石英(SiO2)。
一些实施例中,基板支撑件108可包括多个机构,这些机构用于控制基板温度(诸如加热及/或冷却装置)及/或用于控制基板表面附近的物种通量及/或离子能量。例如,一些实施例中,基板支撑件108可包括加热器117(例如电阻式加热器),该加热器117由电源119供给电力,以助于控制基板支撑件108的温度。在此实施例中,加热器117可包含多个区块,这些区块可独立操作以提供横越基板支撑件108的选择性的温度控制。
一些实施例中,基板支撑件108可包含一种机构,该机构保持或支撑基板110于基板支撑件108的表面上,该机构诸如为静电夹盘109。例如,在一些实施例中,该基板支撑件108可包括电极140。在一些实施例中,该电极140(例如导电筛(conductive mesh))可耦接一或更多个电源。例如,电极140可耦接夹持电源137,该夹持电源137诸如为DC或AC的电源供应器。一些实施例中,电极140(或基板支撑件中不同的电极)可透过匹配网络136耦接偏压电源138。一些实施例中,电极140可嵌在静电夹盘109的一部分中。例如,静电夹盘109可包含介电构件,该介电构件具有支撑表面,用于支撑具有给定宽度的基板,该给定宽度例如为200mm、300mm、或其他经设计尺寸的硅晶圆或其他基板。在基板为圆形的实施例中,该介电构件可以是碟的形式或圆盘(puck)(介电构件)202,诸如图2中所示。圆盘202可被板216支撑,该板216配置在基板支撑底座210顶上。一些实施例中,基板支撑底座210可包含导管212,该导管被配置成使工艺资源(例如RF或DC功率)发送到静电夹盘109。圆盘202可包含任何适合用于半导体处理的绝缘材料,例如陶瓷,该陶瓷诸如铝土(Al2O3)、氮化硅(SiN)、或类似物。
发明人已经观察到,具有处理套组(例如前述的边缘环)的习知上所使用的基板支撑件中,工艺的不均匀可能会于处理期间发生在接近基板边缘处,这是由于用于制造处理套组与基板的材料在电性质与热性质上有所差异所致。再者,发明人已观察到,用在等离子体处理腔室(例如蚀刻腔室)中的习知静电夹盘一般不会延伸超过设置在静电夹盘上的基板的边缘。然而,发明人已发现,由于静电夹盘不延伸超过基板边缘,故该静电夹盘在基板上方产生的电磁场会引发待形成于基板上方的等离子体具有在基板边缘附近朝基板偏折的等离子体鞘。此般等离子体鞘的偏折导致轰击基板的离子轨道在基板边缘附近之处相较于在基板中央处有所差异,因而引发基板的不均匀蚀刻,故影响整体临界尺寸的均匀性。
因此,在一些实施例中,静电夹盘109的电极140可从圆盘202的中心或中心轴线211延伸至超过基板110的边缘204的区域213。发明人已经观察到,透过延伸电极(导电筛)140超过基板110的边缘204,可在基板110上方产生更均匀的电磁场,因此减少或消除等离子体鞘的偏折(如前文所述),故限制或防止基板110的不均匀蚀刻。电极140可延伸超过基板110的边缘任何适当距离,该距离适于提供如前文所述的更均匀的电磁场,该距离例如为从低于约一毫米至数十毫米。一些实施例中,电极140可延伸于处理套组113下方。
一些实施例中,可将两个或更多个电源(例如DC电源206与RF电源208)耦接电极140。在这样的实施例中,DC电源206可提供夹持功率,以助于将基板110固定在静电夹盘109顶上,而RF电源可提供处理功率(例如偏压功率)给基板110,以助于在蚀刻工艺中引导离子朝向基板110。此为说明性质,在一些实施例中,RF电源可提供多达约12000W的功率,而频率为多达约60MHz,或者在一些实施例中,频率为约400kHz,或在一些实施例中,频率为约2MHz,或在一些实施例中,频率为约13.56MHz。
以替代的方式(或以结合的方式),在一些实施例中,层215可设置在边缘环111顶上。当存在该层215时,该层215的导热率可类似基板110的导热率,因而提供基板110的边缘附近的更均匀的温度梯度,故进一步减少工艺的不均匀(例如,上文所讨论的不均匀)。该层215可包含任何具有与特定处理环境(例如蚀刻环境)相容的前述导热率的材料。例如,一些实施例中,层215可包含碳化硅(SiC)、受掺杂的钻石(例如掺杂有硼的钻石)、或类似物。在层215包含受掺杂的材料(例如,受掺杂的钻石)的实施例中,发明人已观察到,可变化掺质的量,以控制层215的导电率。透过控制层215的导电率,可在基板110上方产生更均匀的电磁场,因此减少或消除等离子体鞘的偏折,因而限制或防止基板110的不均匀蚀刻(如前文所述)。
一些实施例中,静电夹盘109可包含设置在圆盘202内的两个分别的电极(例如,图中显示电极140与第二电极(导电筛)304),如图3所示。该第二电极304可由与电极140相同的材料所制造,或在一些实施例中,可由与电极140相异的材料所制造。此外,第二电极304可具有与电极140相同的密度,或在一些实施例中,具有与电极140相异的密度。一些实施例中,第二电极304可被设置成使得基板110至第二电极304的距离306与基板110至电极140的距离308相同或相异。
一些实施例中,第二电源302可耦接第二电极304,以提供功率给第二电极304。第二电源302可以是RF电源或DC电源。在第二电源302是RF电源的实施例中,第二电源304可以适合执行期望工艺的任何频率提供任何RF功率量,例如前文所讨论的功率与频率。透过设置第二电源302,发明人已发现,可在基板110上方产生更均匀的电磁场(如前文所述),因此减少或消除等离子体鞘的偏折(如前文所述),因而限制或防止基板110的不均匀蚀刻。
或者,在一些实施例中,第二电极304可由用于供给电力给电极140的相同的电源(例如电源206、208)供给电力,如图4中所示。在此实施例中,可变电容器或分路(divider circuit)(显示于402)可设置在电源206、208与第二电极304之间,以助于选择性提供功率给额外电极。
因此,在此已提供一种静电夹盘。本发明的静电夹盘的实施例可有利地提供一种静电夹盘,该静电夹盘能够在等离子体处理工艺(例如蚀刻工艺)期间于设置在静电夹盘顶上的基板上方产生更均匀的电磁场,从而减少或消除基板上方形成的等离子体的等离子体鞘的偏折,故减少或防止基板的不均匀蚀刻。本发明的静电夹盘可进一步有利地在基板边缘附近提供更均匀的温度梯度,因此减少工艺的不均匀,并且相较于习知上所用的静电夹盘提供改良的临界尺寸的均匀性。
虽然前述内容涉及本发明的实施例,然而可不背离本发明基本范畴设计其他与进一步的本发明的实施例。
Claims (13)
1.一种用于支撑与保持具有给定宽度的基板的静电夹盘,包含:
介电构件,具有支撑表面,所述支撑表面被配置成支撑具有给定宽度的基板;
电极,设置在所述介电构件内位于所述支撑表面下方,并且从所述介电构件的中心向外延伸至超过所述基板的外周边的区域,所述外周边如由所述基板的所述给定宽度所界定;
RF电源,耦接所述电极;以及
DC电源,耦接所述电极。
2.一种用于支撑与保持具有给定宽度的基板的静电夹盘,包含:
第一电极,设置在静电夹盘的介电构件内且通过中央轴线,所述中央轴线垂直于所述静电夹盘的支撑表面;
第二电极,设置在所述介电构件内并且设置成至少部分位在所述第一电极的径向上外侧处,其中所述第二电极径向向外延伸至超过所述基板的外周边的区域,所述外周边如由所述基板的所述给定宽度所界定;
各耦接所述第一电极的RF电源与DC电源;以及
耦接所述第二电极的RF电源。
3.如权利要求2所述的静电夹盘,其特征在于,所述第一电极延伸至所述基板的边缘附近的区域。
4.如权利要求2所述的静电夹盘,其特征在于,耦接所述第二电极的所述RF电源与耦接所述第一电极的所述RF电源是相同的RF电源。
5.如权利要求4所述的静电夹盘,进一步包含可变电容器或分路,以选择性将自所述RF电源所递送的RF功率分路至所述第一电极与所述第二电极。
6.如权利要求2所述的静电夹盘,其特征在于,耦接所述第二电极的所述RF电源与耦接所述第一电极的所述RF电源是不同的RF电源。
7.如权利要求1至6的任一项所述的静电夹盘,其特征在于,所述介电构件由铝土(Al2O3)或氮化硅(SiN)所制造。
8.如权利要求1至6的任一项所述的静电夹盘,进一步包含:
处理套组,设置在所述静电夹盘顶上,以覆盖所述介电构件的多个部分,并且所述处理套组具有中央开口,所述中央开口对应所述支撑表面;以及
导热层,设置在所述处理套组顶上,其中所述导热层具有导热率,所述导热率实质上类似于待处理的基板的导热率。
9.如权利要求8所述的静电夹盘,其特征在于,所述处理套组由氧化硅(SiO2)所制造。
10.如权利要求8所述的静电夹盘,其特征在于,所述导热层包含碳化硅(SiC)或受掺杂的钻石。
11.如权利要求8所述的静电夹盘,其特征在于,发生以下任一情况:
所述电极延伸至所述处理套组下方的区域;或
所述第二电极延伸至所述处理套组下方的区域。
12.如权利要求1至6的任一项所述的静电夹盘,其特征在于,发生以下任一情况:
所述电极是导电筛;或
所述第一电极或所述第二电极的至少一个是导电筛。
13.如权利要求1至6的任一项所述的静电夹盘,进一步包含:
板,设置在所述介电构件下方,以支撑所述介电构件;以及
支撑底座,设置在所述板下方,以支撑所述板,所述底座具有导管,所述导管设置在所述底座内,以将来自所述RF电源和所述DC电源的电力传送经过所述支撑底座。
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US10950477B2 (en) | 2015-08-07 | 2021-03-16 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
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CN111052343B (zh) * | 2018-07-04 | 2023-10-03 | 日本碍子株式会社 | 晶圆支撑台 |
Also Published As
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WO2013062833A1 (en) | 2013-05-02 |
CN103890928B (zh) | 2017-11-21 |
KR102115745B1 (ko) | 2020-05-27 |
TWI574345B (zh) | 2017-03-11 |
JP6154390B2 (ja) | 2017-06-28 |
JP2015501546A (ja) | 2015-01-15 |
US20130107415A1 (en) | 2013-05-02 |
TW201320235A (zh) | 2013-05-16 |
KR20140088583A (ko) | 2014-07-10 |
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