JP2021507517A - 低周波バイアスを利用した誘電体膜の形状選択的な堆積 - Google Patents
低周波バイアスを利用した誘電体膜の形状選択的な堆積 Download PDFInfo
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Abstract
Description
このような技術によって、後続のプロセスにおいて被覆されていない表面の下層の材料の選択的な変更が可能となり、その一方で、被覆されている平面が、材料又は限界寸法(CD:critical dimension)の変化から護られる。例えば、エピタキシャルSi又はSiGeより上方のコンタクトホール内での側壁の選択的堆積によって、底部のSi又はSiGeのケイ素化が可能となり、その後に表面の酸化物除去が可能となるが、側壁は、これらのプロセスを通して保護されている。
上面及び中央軸を有するセプタアセンブリであって、上面に載置された複数の基板がサセプタアセンブリの中央軸の周りで回転させられる、上面及び中央軸を有するサセプタアセンブリと、
複数の処理領域を含むガス分散アセンブリであって、各処理領域は、ガスカーテンによって隣り合う処理領域から分離され、処理領域の少なくとも1つは、主堆積生成周波数で作動する主堆積生成器を備えたプラズマ処理領域を含む、ガス分散アセンブリと、
サセプタアセンブリに低周波バイアスを印加するために、サセプタアセンブリに電気的に接続された低周波バイアス生成器と
を備える。
サセプタアセンブリの上面に少なくとも1つの基板を載置することと、
複数の処理領域へとガスの流れを供給することであって、各処理領域は、ガスカーテンによって隣り合う処理領域から分離され、複数の処理領域は、複数の熱処理領域を含み、複数の処理領域の少なくとも1つは、主堆積生成器が接続されているプラズマ処理領域である、複数の処理領域へとガスの流れを供給することと、
プラズマ処理領域内でプラズマを形成するために主堆積生成器に電力を供給することと、
サセプタアセンブリに電気的に接続された低周波バイアス生成器に電力を供給して、サセプタアセンブリに低周波バイアスを印加すること
を含む。
処理チャンバ内のサセプタアセンブリの上面に少なくとも1つの基板を載置することと、
第1の数の堆積サイクルに基板表面を暴露することであって、
各堆積サイクルは、
処理チャンバの第1の処理領域内で第1の反応性ガスに基板表面を暴露すること、
第1の処理領域からガスカーテンを通して第2の処理領域へと基板表面を移動させること、
第2の処理領域内で第2の反応性ガスに基板表面を暴露すること、
第2の処理領域からガスカーテンを通してプラズマ処理領域へと基板表面を移動させること、及び、
プラズマ処理領域内でプラズマ処理に基板表面を暴露すること
を含む、第1の数の堆積サイクルに基板表面を暴露することと、
第2の数の処理サイクルに基板表面を暴露することであって、
各処理サイクルは、
サセプタアセンブリに低周波バイアスを供給すること、及び
主堆積生成器により生成される主周波数のプラズマを用いて、バイアスプラズマ処理領域内で、バイアスプラズマ処理に基板表面を暴露することであって、低周波バイアスがサセプタアセンブリに印加される、バイアスプラズマ処理に基板表面を暴露すること
を含む、第2の数の処理サイクルに基板表面を暴露することと
を含む。
同軸RF供給ライン380を含み、間隙340内でプラズマを生成するためにRFホット電極320のための電力を供給する。同軸RF供給ライン380は、絶縁体386によって分離された外側導体382及び内側導体384を含む。内側導体384は、RFホット電極320と電気的に連通しており、外側導体382は、電気接地と電気的に連通しており又はRFホット電極とは異なる位相の電源(図示せず)である。本明細書及び添付の特許請求の範囲において使用される場合、「電気的に連通(electrical communication)」という用語は、構成要素同士が、直接的に接続されているか、又は中間構成要素を介して接続されており、電気抵抗が少ないことを意味する。内側導体384と外側導体382との間の間隙は誘電体で充填されうるが、誘電体は、セラミックであってもよいが任意の適切な誘電材料でありうる。
コンフォーマルな膜の特性の形状的依存性により、後続の湿式エッチングプロセスの間に、著しい追加コストが掛かることなく、水平面の膜の選択的なエッチング(又は、選択的なエッチング公差)が可能となりうる。
幾つかの実施形態は、有利に、様々な用途のために膜特性を柔軟に最適化するプロセスウィンドウを開くために、その場でのLFバイアス性能を備えた装置を提供する。
Claims (15)
- 処理チャンバであって、
上面及び中央軸を有するサセプタアセンブリであって、前記上面に載置された複数の基板が前記サセプタアセンブリの前記中央軸の周りで回転させられる、上面及び中央軸を有するサセプタアセンブリと、
複数の処理領域を含むガス分散アセンブリであって、各処理領域は、ガスカーテンによって隣り合う処理領域から分離され、前記処理領域の少なくとも1つは、主堆積生成周波数で作動する主堆積生成器を備えたプラズマ処理領域を含む、ガス分散アセンブリと、
前記サセプタアセンブリに低周波バイアスを印加するために、前記サセプタアセンブリに電気的に接続された低周波バイアス生成器と
を備えた、処理チャンバ。 - 前記低周波バイアス生成器は周波数が約325kHzである、請求項1に記載の処理チャンバ。
- 前記低周波バイアス生成器は、インタフェースボックスを通じて前記サセプタアセンブリに接続される、請求項1又は2に記載の処理チャンバ。
- 前記インタフェースボックスは、前記サセプタアセンブリのDC絶縁のためのDC遮断コンデンサを含む、請求項3に記載の処理チャンバ。
- 前記インタフェースボックスは、前記主堆積生成周波数の高調波を遮断するための少なくとも1つのRFフィルタを含む、請求項3に記載の処理チャンバ。
- 前記インタフェースボックスは、低周波を上回る周波数を遮断するために少なくとも1つローパスフィルタを含む、請求項3に記載の処理チャンバ。
- 前記主堆積生成周波数は約13.56MHzである、請求項1又は2に記載の処理チャンバ。
- 前記プラズマ処理領域が遠隔プラズマを生成する、請求項1又は2に記載の処理チャンバ。
- 前記プラズマ処理領域は、垂直プラズマ源を備え、前記垂直プラズマ源は、前記サセプタアセンブリの前記上面の上方に或る一定の距離を取って配置されたRFホット電極及びリターン電極を含む、請求項8に記載の処理チャンバ。
- 前記プラズマ処理領域が直流プラズマを生成する、請求項1又は2に記載の処理チャンバ。
- 前記主堆積生成器は、前記ガス分散アセンブリに電力を印加し、前記サセプタアセンブリは、リターン電極として作用し、前記主堆積生成器は、前記プラズマ処理領域内でプラズマを点火するために充分なエネルギーを加え、非プラズマ処理領域内でプラズマを点火しない、請求項10に記載の処理チャンバ。
- 前記サセプタアセンブリ、前記ガス分散アセンブリ、前記主堆積生成器、及び前記低周波バイアス生成器に接続されており、前記サセプタアセンブリ、前記ガス分散アセンブリ、前記主堆積生成器、及び前記低周波バイアス生成器の機能を制御するためのコントローラをさらに備え、
前記コントローラは、前記処理チャンバの機能を制御するための1つ以上の構成を有し、前記1つ以上の構成は、前記サセプタアセンブリを前記中央軸の周りで回転させるための第1の構成と、前記処理領域のそれぞれへのガスの流れを制御するための第2の構成と、前記主堆積生成器への電力を制御するための第3の構成と、前記低周波バイアス生成器への電力を制御するための第4の構成と、から選択される、請求項1に記載の処理チャンバ。 - 層を堆積させる方法であって、
サセプタアセンブリの上面に少なくとも1つの基板を載置することと、
複数の処理領域へとガスの流れを供給することであって、各処理領域は、ガスカーテンによって隣り合う処理領域から分離され、前記複数の処理領域は、複数の熱処理領域を含み、前記複数の処理領域の少なくとも1つは、主堆積生成器が接続されているプラズマ処理領域である、複数の処理領域へとガスの流れを供給することと、
前記プラズマ処理領域内でプラズマを形成するために前記主堆積生成器に電力を供給することと、
前記サセプタアセンブリに電気的に接続された低周波バイアス生成器に電力を供給して、前記サセプタアセンブリに低周波バイアスを印加すること
を含む、方法。 - 前記低周波バイアスが前記サセプタアセンブリに印加されている間は、前記複数の熱処理領域への反応性ガスの流れを止めることを更に含む、請求項13に記載の方法。
- 前記主堆積生成器は、約13.56MHzの主堆積周波数で作動し、前記低周波バイアスは周波数が約325kHzである、請求項13又は14に記載の方法。
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