JP2012216608A - 基板処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000003672 processing method Methods 0.000 title description 2
- 238000012545 processing Methods 0.000 claims abstract description 79
- 238000005530 etching Methods 0.000 abstract description 19
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- 238000000034 method Methods 0.000 description 13
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- 230000006870 function Effects 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
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- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H01J37/32706—Polarising the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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Abstract
【解決手段】基板処理装置10は、内部が減圧されるチャンバ11と、該チャンバ11内に配置されてウエハWを載置するサセプタ12と、プラズマ生成用高周波電圧をサセプタ12に印加するHF高周波電源18と、バイアス電圧発生用高周波電圧をサセプタ12に印加するLF高周波電源20と、矩形波状の直流電圧をサセプタ12に印加する直流電圧印加ユニット23とを備える。
【選択図】図1
Description
10,45,46 基板処理装置
11 チャンバ
12 サセプタ
18 HF高周波電源
20 LF高周波電源
22 ローパスフィルタ
23 直流電圧印加ユニット
30 上部電極板
47,49,50a,50b 接続切替スイッチ
Claims (5)
- 内部が減圧される処理室と、
該処理室内に配置されて基板を載置する載置台と、
比較的高い周波数の高周波電圧を印加する第1の高周波電源と、
比較的低い周波数の高周波電圧を前記載置台に印加する第2の高周波電源と、
矩形波状の直流電圧を前記載置台に印加する直流電圧印加ユニットとを備えることを特徴とする基板処理装置。 - 前記第2の高周波電源及び前記載置台から前記直流電圧印加ユニットを接続/分離可能な接続切替スイッチをさらに備えることを特徴とする請求項1記載の基板処理装置。
- 前記第1の高周波電源からの前記比較的高い周波数の高周波電圧を遮断するローパスフィルタをさらに備え、
前記第1の高周波電源は前記載置台に接続され、
前記ローパスフィルタは、前記第1の高周波電源及び前記第2の高周波電源の間、並びに前記第1の高周波電源及び前記直流電圧印加ユニットの間に介在することを特徴とする請求項1又は2記載の基板処理装置。 - 前記処理室内に配置されて前記載置台と対向する対向電極をさらに備え、
前記第1の高周波電源は前記対向電極に接続されることを特徴とする請求項1又は2記載の基板処理装置。 - 前記比較的高い周波数は40MHz〜300MHzであり、前記比較的低い周波数は380KHz〜20MHzであり、前記直流電圧の矩形波状の周波数は3MHz以下であることを特徴とする請求項1乃至4のいずれか1項に記載の基板処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011079733A JP5864879B2 (ja) | 2011-03-31 | 2011-03-31 | 基板処理装置及びその制御方法 |
TW101111242A TWI591677B (zh) | 2011-03-31 | 2012-03-30 | Substrate processing apparatus |
KR1020120033518A KR102042588B1 (ko) | 2011-03-31 | 2012-03-30 | 기판 처리 방법 |
CN201510962055.5A CN105355532B (zh) | 2011-03-31 | 2012-03-30 | 基板处理装置和基板处理装置的控制方法 |
CN201210091861.6A CN102737942B (zh) | 2011-03-31 | 2012-03-30 | 基板处理方法 |
US13/434,989 US20120247677A1 (en) | 2011-03-31 | 2012-03-30 | Substrate processing method |
US15/391,108 US10032611B2 (en) | 2011-03-31 | 2016-12-27 | Connection control method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011079733A JP5864879B2 (ja) | 2011-03-31 | 2011-03-31 | 基板処理装置及びその制御方法 |
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JP2015251584A Division JP6114370B2 (ja) | 2015-12-24 | 2015-12-24 | 基板処理装置及びその制御方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012216608A true JP2012216608A (ja) | 2012-11-08 |
JP5864879B2 JP5864879B2 (ja) | 2016-02-17 |
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Application Number | Title | Priority Date | Filing Date |
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JP2011079733A Active JP5864879B2 (ja) | 2011-03-31 | 2011-03-31 | 基板処理装置及びその制御方法 |
Country Status (5)
Country | Link |
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US (2) | US20120247677A1 (ja) |
JP (1) | JP5864879B2 (ja) |
KR (1) | KR102042588B1 (ja) |
CN (2) | CN102737942B (ja) |
TW (1) | TWI591677B (ja) |
Cited By (3)
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KR20210018178A (ko) | 2019-08-05 | 2021-02-17 | 주식회사 히타치하이테크 | 플라스마 처리 장치 |
JP2021507517A (ja) * | 2017-12-16 | 2021-02-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 低周波バイアスを利用した誘電体膜の形状選択的な堆積 |
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TW201303954A (zh) | 2013-01-16 |
JP5864879B2 (ja) | 2016-02-17 |
US20170110296A1 (en) | 2017-04-20 |
US20120247677A1 (en) | 2012-10-04 |
KR102042588B1 (ko) | 2019-11-08 |
CN105355532A (zh) | 2016-02-24 |
KR20120112260A (ko) | 2012-10-11 |
TWI591677B (zh) | 2017-07-11 |
CN105355532B (zh) | 2018-08-28 |
US10032611B2 (en) | 2018-07-24 |
CN102737942B (zh) | 2016-01-20 |
CN102737942A (zh) | 2012-10-17 |
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