JP6831916B2 - SiC素材及びSiC複合素材 - Google Patents
SiC素材及びSiC複合素材 Download PDFInfo
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- JP6831916B2 JP6831916B2 JP2019530632A JP2019530632A JP6831916B2 JP 6831916 B2 JP6831916 B2 JP 6831916B2 JP 2019530632 A JP2019530632 A JP 2019530632A JP 2019530632 A JP2019530632 A JP 2019530632A JP 6831916 B2 JP6831916 B2 JP 6831916B2
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- 239000000463 material Substances 0.000 title description 46
- 239000002131 composite material Substances 0.000 title description 25
- 239000011248 coating agent Substances 0.000 claims description 72
- 238000000576 coating method Methods 0.000 claims description 72
- 239000011185 multilayer composite material Substances 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 137
- 229910010271 silicon carbide Inorganic materials 0.000 description 137
- 239000010408 film Substances 0.000 description 60
- 238000005530 etching Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Description
本発明に関連する発明の実施態様の一部を以下に示す。
[態様1]
下記の式(1)により算出されるX線回折ピークの回折強度比(I)が1.5未満である、SiC素材。
前記回折強度比(I)は、1.21以下である、請求項1に記載のSiC素材。
[態様3]
前記回折強度比(I)は、1.0以下である、請求項1に記載のSiC素材。
[態様4]
前記回折強度比(I)は、0.9以下である、請求項1に記載のSiC素材。
[態様5]
前記回折強度比(I)は、0.8以下である、請求項1に記載のSiC素材。
[態様6]
前記111面のピークの2θ値は、35°〜36°であり、
前記200面ピークの2θ値は、41°〜42°であり、
前記220面のピークの2θ値は、60°〜61°である、請求項1に記載のSiC素材。
[態様7]
ベースと、
前記ベース上の少なくとも一面に形成されたSiCコーティング膜と、
を含み、
前記SiCコーティング膜は、請求項1〜6のいずれか一項に記載のSiC素材である、SiC複合素材。
[態様8]
ベースと、
前記ベース上の少なくとも一面に形成された第1SiCコーティング膜と、
前記第1SiCコーティング膜上に形成された第2SiCコーティング膜と、
を含み、
前記第1SiCコーティング膜及び第2SiCコーティング膜は、下記の式(1)により算出されるX線回折ピークの回折強度比(I)が互いに異なる、SiC多重層複合素材。
前記第1SiCコーティング膜の回折強度比(I)は、1.21超過である、請求項8に記載のSiC多重層複合素材。
[態様10]
前記第1SiCコーティング膜の回折強度比(I)は、1.21超過及び1.5未満である、請求項8に記載のSiC多重層複合素材。
[態様11]
前記第1SiCコーティング膜の回折強度比(I)は、1.5以上である、請求項8に記載のSiC多重層複合素材。
[態様12]
前記第2SiCコーティング膜の回折強度比(I)は、1.5未満である、請求項8に記載のSiC多重層複合素材。
[態様13]
前記第1SiCコーティング膜対第2SiCコーティング膜の厚さ比は、1:0.1〜1:0.95である、請求項8に記載のSiC多重層複合素材。
Claims (4)
- 前記第1SiCコーティング膜の回折強度比(I)は、1.21超過及び1.5未満である、請求項1に記載のSiC多重層複合素材。
- 前記第1SiCコーティング膜の回折強度比(I)は、1.5以上である、請求項1に記載のSiC多重層複合素材。
- 前記第1SiCコーティング膜対第2SiCコーティング膜の厚さ比は、1:0.1〜1:0.95である、請求項1に記載のSiC多重層複合素材。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0104726 | 2016-08-18 | ||
KR1020160104726A KR101866869B1 (ko) | 2016-08-18 | 2016-08-18 | SiC 소재 및 SiC 복합 소재 |
PCT/KR2017/009002 WO2018034532A1 (ko) | 2016-08-18 | 2017-08-18 | Sic 소재 및 sic 복합 소재 |
Related Child Applications (1)
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JP2021012846A Division JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
Publications (2)
Publication Number | Publication Date |
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JP2019526525A JP2019526525A (ja) | 2019-09-19 |
JP6831916B2 true JP6831916B2 (ja) | 2021-02-17 |
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JP2019530632A Active JP6831916B2 (ja) | 2016-08-18 | 2017-08-18 | SiC素材及びSiC複合素材 |
JP2021012846A Pending JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
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JP2021012846A Pending JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11591227B2 (ja) |
JP (2) | JP6831916B2 (ja) |
KR (1) | KR101866869B1 (ja) |
CN (1) | CN109562948B (ja) |
SG (1) | SG11201901230VA (ja) |
TW (1) | TWI646229B (ja) |
WO (1) | WO2018034532A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102183258B1 (ko) | 2019-04-18 | 2020-11-26 | 주식회사 티씨케이 | SiC 소재 및 이의 제조방법 |
Family Cites Families (23)
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US4476178A (en) | 1982-06-24 | 1984-10-09 | United Technologies Corporation | Composite silicon carbide coatings for carbon-carbon materials |
US4472476A (en) | 1982-06-24 | 1984-09-18 | United Technologies Corporation | Composite silicon carbide/silicon nitride coatings for carbon-carbon materials |
JPH0692761A (ja) | 1992-09-10 | 1994-04-05 | Shin Etsu Chem Co Ltd | CVD−SiCコートSi含浸SiC製品およびその製造方法 |
JP2918860B2 (ja) * | 1997-01-20 | 1999-07-12 | 日本ピラー工業株式会社 | 鏡面体 |
JPH11157989A (ja) * | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JPH11199323A (ja) | 1998-01-14 | 1999-07-27 | Tokai Carbon Co Ltd | ダミーウエハ |
JP3857446B2 (ja) | 1998-12-01 | 2006-12-13 | 東海カーボン株式会社 | SiC成形体 |
JP2001048649A (ja) | 1999-07-30 | 2001-02-20 | Asahi Glass Co Ltd | 炭化ケイ素およびその製造方法 |
JP4786782B2 (ja) * | 1999-08-02 | 2011-10-05 | 東京エレクトロン株式会社 | 耐食性に優れたCVD−SiCおよびそれを用いた耐食性部材、ならびに処理装置 |
JP4361177B2 (ja) * | 1999-11-02 | 2009-11-11 | 東洋炭素株式会社 | 炭化ケイ素材料及びrtp装置用治具 |
JP3557457B2 (ja) | 2001-02-01 | 2004-08-25 | 東北大学長 | SiC膜の製造方法、及びSiC多層膜構造の製造方法 |
US20050123713A1 (en) | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
JP5087238B2 (ja) * | 2006-06-22 | 2012-12-05 | 株式会社ニューフレアテクノロジー | 半導体製造装置の保守方法及び半導体製造方法 |
JP5051909B2 (ja) * | 2007-03-30 | 2012-10-17 | コバレントマテリアル株式会社 | 縦型ウエハボート |
EP2432002A4 (en) | 2009-05-11 | 2012-11-21 | Sumitomo Electric Industries | SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR ELEMENT |
JP5724122B2 (ja) | 2010-12-24 | 2015-05-27 | 東洋炭素株式会社 | 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法 |
CN103282557B (zh) * | 2010-12-24 | 2017-02-15 | 东洋炭素株式会社 | 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法 |
WO2012086238A1 (ja) | 2010-12-24 | 2012-06-28 | 東洋炭素株式会社 | 単結晶炭化ケイ素液相エピタキシャル成長用シード材及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
KR101788905B1 (ko) * | 2010-12-24 | 2017-10-20 | 도요탄소 가부시키가이샤 | 단결정 탄화규소 에피택셜 성장용 피드재 및 단결정 탄화규소의 에피택셜 성장 방법 |
JP5896297B2 (ja) * | 2012-08-01 | 2016-03-30 | 東海カーボン株式会社 | CVD−SiC成形体およびCVD−SiC成形体の製造方法 |
CN102874809A (zh) * | 2012-10-22 | 2013-01-16 | 南京工业大学 | 一种碳化硅复合粉体及其制备工艺 |
FR3002952B1 (fr) | 2013-03-08 | 2015-10-30 | Commissariat Energie Atomique | Procede de preparation d'un revetement multicouche de ceramiques carbures sur, et eventuellement dans, une piece en un materiau carbone, par une technique d'infiltration reactive a l'etat fondu rmi. |
KR101631797B1 (ko) | 2015-04-13 | 2016-06-20 | 주식회사 티씨케이 | 건식식각장치의 SiC 구조물 및 그 제조방법 |
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2016
- 2016-08-18 KR KR1020160104726A patent/KR101866869B1/ko active IP Right Review Request
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2017
- 2017-08-18 CN CN201780049770.7A patent/CN109562948B/zh active Active
- 2017-08-18 JP JP2019530632A patent/JP6831916B2/ja active Active
- 2017-08-18 SG SG11201901230VA patent/SG11201901230VA/en unknown
- 2017-08-18 WO PCT/KR2017/009002 patent/WO2018034532A1/ko active Application Filing
- 2017-08-18 TW TW106128050A patent/TWI646229B/zh active
- 2017-08-18 US US16/325,983 patent/US11591227B2/en active Active
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- 2021-01-29 JP JP2021012846A patent/JP2021066657A/ja active Pending
Also Published As
Publication number | Publication date |
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SG11201901230VA (en) | 2019-03-28 |
WO2018034532A1 (ko) | 2018-02-22 |
KR101866869B9 (ko) | 2022-05-02 |
CN109562948B (zh) | 2022-09-30 |
US20190177172A1 (en) | 2019-06-13 |
CN109562948A (zh) | 2019-04-02 |
KR20180020442A (ko) | 2018-02-28 |
KR101866869B1 (ko) | 2018-06-14 |
JP2021066657A (ja) | 2021-04-30 |
JP2019526525A (ja) | 2019-09-19 |
TWI646229B (zh) | 2019-01-01 |
TW201812123A (zh) | 2018-04-01 |
US11591227B2 (en) | 2023-02-28 |
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