JP6831916B2 - SiC素材及びSiC複合素材 - Google Patents
SiC素材及びSiC複合素材 Download PDFInfo
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- JP6831916B2 JP6831916B2 JP2019530632A JP2019530632A JP6831916B2 JP 6831916 B2 JP6831916 B2 JP 6831916B2 JP 2019530632 A JP2019530632 A JP 2019530632A JP 2019530632 A JP2019530632 A JP 2019530632A JP 6831916 B2 JP6831916 B2 JP 6831916B2
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- 239000000463 material Substances 0.000 title description 46
- 239000002131 composite material Substances 0.000 title description 25
- 239000011248 coating agent Substances 0.000 claims description 72
- 238000000576 coating method Methods 0.000 claims description 72
- 239000011185 multilayer composite material Substances 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 137
- 229910010271 silicon carbide Inorganic materials 0.000 description 137
- 239000010408 film Substances 0.000 description 60
- 238000005530 etching Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/984—Preparation from elemental silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Ceramic Products (AREA)
Description
本発明に関連する発明の実施態様の一部を以下に示す。
[態様1]
下記の式(1)により算出されるX線回折ピークの回折強度比(I)が1.5未満である、SiC素材。
前記回折強度比(I)は、1.21以下である、請求項1に記載のSiC素材。
[態様3]
前記回折強度比(I)は、1.0以下である、請求項1に記載のSiC素材。
[態様4]
前記回折強度比(I)は、0.9以下である、請求項1に記載のSiC素材。
[態様5]
前記回折強度比(I)は、0.8以下である、請求項1に記載のSiC素材。
[態様6]
前記111面のピークの2θ値は、35°〜36°であり、
前記200面ピークの2θ値は、41°〜42°であり、
前記220面のピークの2θ値は、60°〜61°である、請求項1に記載のSiC素材。
[態様7]
ベースと、
前記ベース上の少なくとも一面に形成されたSiCコーティング膜と、
を含み、
前記SiCコーティング膜は、請求項1〜6のいずれか一項に記載のSiC素材である、SiC複合素材。
[態様8]
ベースと、
前記ベース上の少なくとも一面に形成された第1SiCコーティング膜と、
前記第1SiCコーティング膜上に形成された第2SiCコーティング膜と、
を含み、
前記第1SiCコーティング膜及び第2SiCコーティング膜は、下記の式(1)により算出されるX線回折ピークの回折強度比(I)が互いに異なる、SiC多重層複合素材。
前記第1SiCコーティング膜の回折強度比(I)は、1.21超過である、請求項8に記載のSiC多重層複合素材。
[態様10]
前記第1SiCコーティング膜の回折強度比(I)は、1.21超過及び1.5未満である、請求項8に記載のSiC多重層複合素材。
[態様11]
前記第1SiCコーティング膜の回折強度比(I)は、1.5以上である、請求項8に記載のSiC多重層複合素材。
[態様12]
前記第2SiCコーティング膜の回折強度比(I)は、1.5未満である、請求項8に記載のSiC多重層複合素材。
[態様13]
前記第1SiCコーティング膜対第2SiCコーティング膜の厚さ比は、1:0.1〜1:0.95である、請求項8に記載のSiC多重層複合素材。
Claims (4)
- 前記第1SiCコーティング膜の回折強度比(I)は、1.21超過及び1.5未満である、請求項1に記載のSiC多重層複合素材。
- 前記第1SiCコーティング膜の回折強度比(I)は、1.5以上である、請求項1に記載のSiC多重層複合素材。
- 前記第1SiCコーティング膜対第2SiCコーティング膜の厚さ比は、1:0.1〜1:0.95である、請求項1に記載のSiC多重層複合素材。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0104726 | 2016-08-18 | ||
KR1020160104726A KR101866869B1 (ko) | 2016-08-18 | 2016-08-18 | SiC 소재 및 SiC 복합 소재 |
PCT/KR2017/009002 WO2018034532A1 (ko) | 2016-08-18 | 2017-08-18 | Sic 소재 및 sic 복합 소재 |
Related Child Applications (1)
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JP2021012846A Division JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
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JP2019526525A JP2019526525A (ja) | 2019-09-19 |
JP6831916B2 true JP6831916B2 (ja) | 2021-02-17 |
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JP2019530632A Active JP6831916B2 (ja) | 2016-08-18 | 2017-08-18 | SiC素材及びSiC複合素材 |
JP2021012846A Pending JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
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JP2021012846A Pending JP2021066657A (ja) | 2016-08-18 | 2021-01-29 | SiC素材及びSiC複合素材 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11591227B2 (ja) |
JP (2) | JP6831916B2 (ja) |
KR (1) | KR101866869B1 (ja) |
CN (1) | CN109562948B (ja) |
SG (1) | SG11201901230VA (ja) |
TW (1) | TWI646229B (ja) |
WO (1) | WO2018034532A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102183258B1 (ko) | 2019-04-18 | 2020-11-26 | 주식회사 티씨케이 | SiC 소재 및 이의 제조방법 |
Family Cites Families (23)
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US4472476A (en) | 1982-06-24 | 1984-09-18 | United Technologies Corporation | Composite silicon carbide/silicon nitride coatings for carbon-carbon materials |
US4476178A (en) | 1982-06-24 | 1984-10-09 | United Technologies Corporation | Composite silicon carbide coatings for carbon-carbon materials |
JPH0692761A (ja) | 1992-09-10 | 1994-04-05 | Shin Etsu Chem Co Ltd | CVD−SiCコートSi含浸SiC製品およびその製造方法 |
JP2918860B2 (ja) * | 1997-01-20 | 1999-07-12 | 日本ピラー工業株式会社 | 鏡面体 |
JPH11157989A (ja) | 1997-11-25 | 1999-06-15 | Toyo Tanso Kk | 気相成長用サセプター及びその製造方法 |
JPH11199323A (ja) | 1998-01-14 | 1999-07-27 | Tokai Carbon Co Ltd | ダミーウエハ |
JP3857446B2 (ja) * | 1998-12-01 | 2006-12-13 | 東海カーボン株式会社 | SiC成形体 |
JP2001048649A (ja) * | 1999-07-30 | 2001-02-20 | Asahi Glass Co Ltd | 炭化ケイ素およびその製造方法 |
JP4786782B2 (ja) | 1999-08-02 | 2011-10-05 | 東京エレクトロン株式会社 | 耐食性に優れたCVD−SiCおよびそれを用いた耐食性部材、ならびに処理装置 |
JP4361177B2 (ja) * | 1999-11-02 | 2009-11-11 | 東洋炭素株式会社 | 炭化ケイ素材料及びrtp装置用治具 |
JP3557457B2 (ja) | 2001-02-01 | 2004-08-25 | 東北大学長 | SiC膜の製造方法、及びSiC多層膜構造の製造方法 |
US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
JP5087238B2 (ja) * | 2006-06-22 | 2012-12-05 | 株式会社ニューフレアテクノロジー | 半導体製造装置の保守方法及び半導体製造方法 |
JP5051909B2 (ja) | 2007-03-30 | 2012-10-17 | コバレントマテリアル株式会社 | 縦型ウエハボート |
US8168515B2 (en) | 2009-05-11 | 2012-05-01 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor substrate |
US9725822B2 (en) * | 2010-12-24 | 2017-08-08 | Toyo Tanso Co., Ltd. | Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph |
JP5724122B2 (ja) * | 2010-12-24 | 2015-05-27 | 東洋炭素株式会社 | 単結晶炭化ケイ素エピタキシャル成長用フィード材及び単結晶炭化ケイ素のエピタキシャル成長方法 |
CN103282557B (zh) * | 2010-12-24 | 2017-02-15 | 东洋炭素株式会社 | 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法 |
US10358741B2 (en) | 2010-12-24 | 2019-07-23 | Toyo Tanso Co., Ltd. | Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
JP5896297B2 (ja) * | 2012-08-01 | 2016-03-30 | 東海カーボン株式会社 | CVD−SiC成形体およびCVD−SiC成形体の製造方法 |
CN102874809A (zh) * | 2012-10-22 | 2013-01-16 | 南京工业大学 | 一种碳化硅复合粉体及其制备工艺 |
FR3002952B1 (fr) | 2013-03-08 | 2015-10-30 | Commissariat Energie Atomique | Procede de preparation d'un revetement multicouche de ceramiques carbures sur, et eventuellement dans, une piece en un materiau carbone, par une technique d'infiltration reactive a l'etat fondu rmi. |
KR101631797B1 (ko) * | 2015-04-13 | 2016-06-20 | 주식회사 티씨케이 | 건식식각장치의 SiC 구조물 및 그 제조방법 |
-
2016
- 2016-08-18 KR KR1020160104726A patent/KR101866869B1/ko active IP Right Review Request
-
2017
- 2017-08-18 WO PCT/KR2017/009002 patent/WO2018034532A1/ko active Application Filing
- 2017-08-18 JP JP2019530632A patent/JP6831916B2/ja active Active
- 2017-08-18 US US16/325,983 patent/US11591227B2/en active Active
- 2017-08-18 TW TW106128050A patent/TWI646229B/zh active
- 2017-08-18 SG SG11201901230VA patent/SG11201901230VA/en unknown
- 2017-08-18 CN CN201780049770.7A patent/CN109562948B/zh active Active
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2021
- 2021-01-29 JP JP2021012846A patent/JP2021066657A/ja active Pending
Also Published As
Publication number | Publication date |
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KR101866869B9 (ko) | 2022-05-02 |
US11591227B2 (en) | 2023-02-28 |
KR20180020442A (ko) | 2018-02-28 |
JP2019526525A (ja) | 2019-09-19 |
SG11201901230VA (en) | 2019-03-28 |
WO2018034532A1 (ko) | 2018-02-22 |
KR101866869B1 (ko) | 2018-06-14 |
TW201812123A (zh) | 2018-04-01 |
US20190177172A1 (en) | 2019-06-13 |
CN109562948A (zh) | 2019-04-02 |
CN109562948B (zh) | 2022-09-30 |
TWI646229B (zh) | 2019-01-01 |
JP2021066657A (ja) | 2021-04-30 |
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