CN105734671A - 一种高质量碳化硅晶体生长的方法 - Google Patents
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Cited By (9)
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CN107190323A (zh) * | 2017-06-06 | 2017-09-22 | 宝鸡文理学院 | 一种生长低缺陷碳化硅单晶的方法 |
CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
CN108946735A (zh) * | 2017-05-19 | 2018-12-07 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
CN109402731A (zh) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
WO2019171901A1 (ja) * | 2018-03-08 | 2019-09-12 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
CN110878424A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | SiC单晶的制造方法和被覆构件 |
CN110878422A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | 单晶生长用坩埚和单晶生长方法 |
CN110878427A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | 单晶生长方法 |
CN111172593A (zh) * | 2020-03-06 | 2020-05-19 | 福建三邦硅材料有限公司 | 一种碳化硅晶体的生长方法 |
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Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108946735A (zh) * | 2017-05-19 | 2018-12-07 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
CN107190323A (zh) * | 2017-06-06 | 2017-09-22 | 宝鸡文理学院 | 一种生长低缺陷碳化硅单晶的方法 |
CN108193282A (zh) * | 2017-11-14 | 2018-06-22 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
EP3763853A4 (en) * | 2018-03-08 | 2021-12-01 | Shin-Etsu Handotai Co., Ltd. | SILICON CARBIDE MONOCRISTAL PRODUCTION PROCESS |
WO2019171901A1 (ja) * | 2018-03-08 | 2019-09-12 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
JP2019156660A (ja) * | 2018-03-08 | 2019-09-19 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
TWI774929B (zh) * | 2018-03-08 | 2022-08-21 | 日商信越半導體股份有限公司 | 碳化矽單晶的製造方法 |
CN110878427A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | 单晶生长方法 |
US11421339B2 (en) * | 2018-09-06 | 2022-08-23 | Showa Denko K.K. | Method of manufacturing SiC single crystal and covering member |
JP2020040843A (ja) * | 2018-09-06 | 2020-03-19 | 昭和電工株式会社 | 単結晶成長方法 |
JP2020040844A (ja) * | 2018-09-06 | 2020-03-19 | 昭和電工株式会社 | SiC単結晶の製造方法及び被覆部材 |
US11814749B2 (en) | 2018-09-06 | 2023-11-14 | Resonac Corporation | Single crystal growth crucible and single crystal growth method |
CN110878427B (zh) * | 2018-09-06 | 2021-08-31 | 昭和电工株式会社 | 单晶生长方法 |
US11111599B2 (en) | 2018-09-06 | 2021-09-07 | Showa Denko K.K. | Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder |
CN110878422B (zh) * | 2018-09-06 | 2021-09-24 | 昭和电工株式会社 | 单晶生长用坩埚和单晶生长方法 |
JP7258273B2 (ja) | 2018-09-06 | 2023-04-17 | 株式会社レゾナック | SiC単結晶の製造方法及び被覆部材 |
CN110878424A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | SiC单晶的制造方法和被覆构件 |
CN110878422A (zh) * | 2018-09-06 | 2020-03-13 | 昭和电工株式会社 | 单晶生长用坩埚和单晶生长方法 |
JP7166111B2 (ja) | 2018-09-06 | 2022-11-07 | 昭和電工株式会社 | 単結晶成長方法 |
CN109402731A (zh) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
US11851784B2 (en) | 2018-10-17 | 2023-12-26 | Fujian Beidian Material Technologies Co., Ltd. | Apparatus and method for growing high-purity semi-insulating silicon carbide crystal |
CN111172593A (zh) * | 2020-03-06 | 2020-05-19 | 福建三邦硅材料有限公司 | 一种碳化硅晶体的生长方法 |
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