CN105734671B - 一种高质量碳化硅晶体生长的方法 - Google Patents
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Families Citing this family (9)
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CN108946735B (zh) * | 2017-05-19 | 2022-11-11 | 新疆天科合达蓝光半导体有限公司 | 一种碳化硅晶体生长用大粒径碳化硅粉料的合成方法 |
CN107190323A (zh) * | 2017-06-06 | 2017-09-22 | 宝鸡文理学院 | 一种生长低缺陷碳化硅单晶的方法 |
CN108193282B (zh) * | 2017-11-14 | 2019-06-25 | 山东天岳先进材料科技有限公司 | 一种高纯碳化硅原料的合成方法及其应用 |
JP6881357B2 (ja) * | 2018-03-08 | 2021-06-02 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
JP7170470B2 (ja) | 2018-09-06 | 2022-11-14 | 昭和電工株式会社 | 単結晶成長用坩堝及び単結晶成長方法 |
JP7166111B2 (ja) * | 2018-09-06 | 2022-11-07 | 昭和電工株式会社 | 単結晶成長方法 |
JP7258273B2 (ja) * | 2018-09-06 | 2023-04-17 | 株式会社レゾナック | SiC単結晶の製造方法及び被覆部材 |
CN109402731B (zh) * | 2018-10-17 | 2021-01-15 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
CN111172593B (zh) * | 2020-03-06 | 2021-01-29 | 福建三邦硅材料有限公司 | 一种碳化硅晶体的生长方法 |
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CN101553606A (zh) * | 2006-11-20 | 2009-10-07 | Lpe公司 | 晶体生长用反应器 |
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JP5102697B2 (ja) * | 2008-05-21 | 2012-12-19 | 株式会社ブリヂストン | 炭化珪素単結晶の製造方法 |
KR20120131016A (ko) * | 2011-05-24 | 2012-12-04 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
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KR101854727B1 (ko) * | 2011-06-24 | 2018-05-04 | 엘지이노텍 주식회사 | 잉곳 제조 장치 |
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CN101553606A (zh) * | 2006-11-20 | 2009-10-07 | Lpe公司 | 晶体生长用反应器 |
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Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Co-patentee after: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Co-patentee after: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: 100190, room 1, building 66, No. 2005 East Zhongguancun Road, Beijing, Haidian District Co-patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES Patentee before: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Co-patentee before: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20191227 Address after: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Co-patentee after: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Patentee after: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Address before: Room 301, Building 9, Tianrong Street, Daxing Biomedical Industry Base, Zhongguancun Science and Technology Park, Daxing District, Beijing 102600 Co-patentee before: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES Patentee before: TANKEBLUE SEMICONDUCTOR Co.,Ltd. Co-patentee before: XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. |
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Application publication date: 20160706 Assignee: Shenzhen Reinvested Tianke Semiconductor Co.,Ltd. Assignor: TANKEBLUE SEMICONDUCTOR Co.,Ltd.|XINJIANG TANKEBLUE SEMICONDUCTOR Co.,Ltd. Contract record no.: X2023990000679 Denomination of invention: A Method for High Quality Silicon Carbide Crystal Growth Granted publication date: 20181130 License type: Common License Record date: 20230725 |