CN105463575B - 一种用于生长高质量碳化硅晶体的籽晶处理方法 - Google Patents
一种用于生长高质量碳化硅晶体的籽晶处理方法 Download PDFInfo
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- CN105463575B CN105463575B CN201610024961.5A CN201610024961A CN105463575B CN 105463575 B CN105463575 B CN 105463575B CN 201610024961 A CN201610024961 A CN 201610024961A CN 105463575 B CN105463575 B CN 105463575B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106048716A (zh) * | 2016-06-30 | 2016-10-26 | 山东天岳先进材料科技有限公司 | 一种碳化硅衬底的优化方法 |
CN106435734B (zh) * | 2016-12-09 | 2018-11-20 | 河北同光晶体有限公司 | 一种用于生长低缺陷碳化硅单晶的籽晶处理方法 |
CN108048911A (zh) * | 2017-12-20 | 2018-05-18 | 中国科学院上海硅酸盐研究所 | 一种采用物理气相沉积技术生长大尺寸碳化硅晶体的方法 |
CN109137076A (zh) * | 2018-10-17 | 2019-01-04 | 福建北电新材料科技有限公司 | 一种生长碳化硅单晶的籽晶片固定装置及其使用方法 |
CN111074338B (zh) * | 2018-10-22 | 2022-09-20 | 赛尼克公司 | 具有保护膜的籽晶及其制备方法和附着方法、采用该籽晶的晶锭的制备方法 |
CN113897684B (zh) * | 2020-06-22 | 2023-08-08 | 比亚迪股份有限公司 | 碳化硅籽晶、碳化硅籽晶组件及其制备方法和制备碳化硅晶体的方法 |
CN113403688B (zh) * | 2021-06-22 | 2022-08-02 | 山东天岳先进科技股份有限公司 | 一种籽晶及其制备方法 |
CN114318519B (zh) * | 2021-12-31 | 2023-05-16 | 北京北方华创微电子装备有限公司 | 碳化硅籽晶与石墨盖的固定方法、石墨盖及生长工艺方法 |
CN114622174B (zh) * | 2022-03-16 | 2023-12-22 | 杭州乾晶半导体有限公司 | 一种保护碳化硅籽晶背封层的方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101580964A (zh) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | 一种用于生长高质量碳化硅晶体的籽晶托 |
CN101985773A (zh) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
CN102057084A (zh) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | 碳化硅单晶生长用籽晶及其制造方法和碳化硅单晶及其制造方法 |
CN103088411A (zh) * | 2013-01-23 | 2013-05-08 | 保定科瑞晶体有限公司 | 一种用于碳化硅晶体生长的籽晶固定方法 |
CN103160928A (zh) * | 2011-12-13 | 2013-06-19 | 北京有色金属研究总院 | 一种生长高质量SiC单晶的籽晶处理方法 |
CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
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- 2016-01-15 CN CN201610024961.5A patent/CN105463575B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101580964A (zh) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | 一种用于生长高质量碳化硅晶体的籽晶托 |
CN102057084A (zh) * | 2008-07-04 | 2011-05-11 | 昭和电工株式会社 | 碳化硅单晶生长用籽晶及其制造方法和碳化硅单晶及其制造方法 |
CN101985773A (zh) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
CN103160928A (zh) * | 2011-12-13 | 2013-06-19 | 北京有色金属研究总院 | 一种生长高质量SiC单晶的籽晶处理方法 |
CN103088411A (zh) * | 2013-01-23 | 2013-05-08 | 保定科瑞晶体有限公司 | 一种用于碳化硅晶体生长的籽晶固定方法 |
CN104233458A (zh) * | 2014-09-30 | 2014-12-24 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用的石墨籽晶托 |
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