CN106245110B - 一种减少SiC晶体生长中缺陷产生的方法 - Google Patents
一种减少SiC晶体生长中缺陷产生的方法 Download PDFInfo
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- CN106245110B CN106245110B CN201610750958.1A CN201610750958A CN106245110B CN 106245110 B CN106245110 B CN 106245110B CN 201610750958 A CN201610750958 A CN 201610750958A CN 106245110 B CN106245110 B CN 106245110B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107976410B (zh) * | 2017-12-28 | 2021-02-02 | 河北同光晶体有限公司 | 一种鉴定工业化体块SiC单晶晶型的方法 |
CN108118389A (zh) * | 2017-12-28 | 2018-06-05 | 河北同光晶体有限公司 | 一种高品质碳化硅单晶的籽晶的制备方法 |
KR102268424B1 (ko) * | 2019-10-22 | 2021-06-22 | 에스케이씨 주식회사 | 종자정 접착층, 이를 적용한 적층체의 제조방법 및 웨이퍼의 제조방법 |
CN113546821A (zh) * | 2021-07-22 | 2021-10-26 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种碳化硅籽晶的镀膜方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2964080B1 (ja) * | 1998-07-13 | 1999-10-18 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
CN101580964A (zh) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | 一种用于生长高质量碳化硅晶体的籽晶托 |
CN101985773A (zh) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
CN102534762A (zh) * | 2010-12-14 | 2012-07-04 | 上海硅酸盐研究所中试基地 | 一种生长SiC晶体的籽晶粘结方法 |
CN105780107A (zh) * | 2014-12-18 | 2016-07-20 | 中国科学院物理研究所 | 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法 |
Family Cites Families (2)
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JPH07330493A (ja) * | 1994-06-08 | 1995-12-19 | Nippon Steel Corp | 4h形炭化珪素単結晶の成長方法 |
JP3491436B2 (ja) * | 1996-03-29 | 2004-01-26 | 株式会社デンソー | 炭化珪素単結晶の製造方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2964080B1 (ja) * | 1998-07-13 | 1999-10-18 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
CN101580964A (zh) * | 2008-05-12 | 2009-11-18 | 中国科学院物理研究所 | 一种用于生长高质量碳化硅晶体的籽晶托 |
CN101985773A (zh) * | 2009-11-05 | 2011-03-16 | 新疆天科合达蓝光半导体有限公司 | 一种籽晶处理方法和生长碳化硅单晶的方法 |
CN102534762A (zh) * | 2010-12-14 | 2012-07-04 | 上海硅酸盐研究所中试基地 | 一种生长SiC晶体的籽晶粘结方法 |
CN105780107A (zh) * | 2014-12-18 | 2016-07-20 | 中国科学院物理研究所 | 提高碳化硅晶体生长质量的籽晶处理方法以及用于碳化硅晶体生长的方法 |
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Inventor after: Zheng Qingchao Inventor after: Yang Kun Inventor before: Zheng Qingchao Inventor before: Yang Kun |
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