JP7166111B2 - 単結晶成長方法 - Google Patents
単結晶成長方法 Download PDFInfo
- Publication number
- JP7166111B2 JP7166111B2 JP2018167063A JP2018167063A JP7166111B2 JP 7166111 B2 JP7166111 B2 JP 7166111B2 JP 2018167063 A JP2018167063 A JP 2018167063A JP 2018167063 A JP2018167063 A JP 2018167063A JP 7166111 B2 JP7166111 B2 JP 7166111B2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- single crystal
- carbide powder
- metal carbide
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002109 crystal growth method Methods 0.000 title claims description 21
- 239000002994 raw material Substances 0.000 claims description 81
- 239000013078 crystal Substances 0.000 claims description 66
- 239000000843 powder Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000009434 installation Methods 0.000 claims description 8
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical group [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 25
- 239000002244 precipitate Substances 0.000 description 10
- 238000001953 recrystallisation Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- WHJFNYXPKGDKBB-UHFFFAOYSA-N hafnium;methane Chemical compound C.[Hf] WHJFNYXPKGDKBB-UHFFFAOYSA-N 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005092 sublimation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- CNEOGBIICRAWOH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo] CNEOGBIICRAWOH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
すなわち、本発明は、上記課題を解決するために、以下の手段を提供する。
(第1実施形態)
図1は、第1実施形態にかかる単結晶成長方法を説明するための模式図である。まず単結晶成長方法に用いる単結晶成長装置100について説明する。図1に示す単結晶成長装置100は、坩堝10と加熱手段30とを有する。図1では、坩堝10の内部構造を同時に図示する。
まず内部に円柱状の内部空間が設けられた結晶成長用坩堝を準備した。そして、結晶成長用坩堝の内底部に原料として粉末状態のSiC粉末原料を充填した。次いで、充填したSiC粉末原料上に、タンタルカーバイド粉末を設置した。タンタルカーバイド粉末は、原料の中央領域を被覆していた。
比較例1では、タンタルカーバイド粉末を用いなかった点が実施例1と異なる。すなわち、原料表面を被覆せずに、SiCインゴットを結晶成長させた。その他の条件は、実施例1と同様にして単結晶の結晶成長を行った。
10 容器
11 内底部
12 結晶設置部
18 メタルカーバイド粉末
18a 表面
19 仕切り板
30 コイル
100 単結晶成長装置
M 原料
Ma 原料表面
Claims (6)
- 原料を収容する内底部と、前記内底部と対向する結晶設置部と、を備える坩堝において、
前記内底部に原料を収容する収容工程と、
前記収容工程の後に、前記結晶設置部からの平面視で、前記原料の表面の少なくとも一部を、メタルカーバイド粉末で被覆する被覆工程と、
前記被覆工程の後に、加熱により前記原料を昇華させ、前記結晶設置部に設置された単結晶を成長させる結晶成長工程と、を有し、
前記被覆工程において、前記メタルカーバイド粉末で被覆する領域が、前記原料の表面の中央領域からなる、単結晶成長方法。 - 前記被覆工程において、前記中央領域は、前記原料の表面の中央から20面積%の領域である、請求項1に記載の単結晶成長方法。
- 前記被覆工程において、前記メタルカーバイド粉末が原料表面内の最高温度より15℃以上低くなる領域を覆う、請求項1又は2に記載の単結晶成長方法。
- 前記メタルカーバイド粉末の粒径が、0.1mm以上2.0mm以下である、請求項1~3のいずれか一項に記載の単結晶成長方法。
- 前記メタルカーバイド粉末が、タンタルカーバイド粉末である、請求項1~4のいずれか一項に記載の単結晶成長方法。
- 前記被覆工程で被覆され、メタルカーバイド粉末からなる被覆領域の平均厚みを1.0mm以上30mm以下とする、請求項1~5のいずれか一項に記載の単結晶成長方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018167063A JP7166111B2 (ja) | 2018-09-06 | 2018-09-06 | 単結晶成長方法 |
CN201910751559.0A CN110878427B (zh) | 2018-09-06 | 2019-08-15 | 单晶生长方法 |
US16/559,875 US11111599B2 (en) | 2018-09-06 | 2019-09-04 | Single crystal growth method which includes covering a part of a surface of a raw material for sublimation with a metal carbide powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018167063A JP7166111B2 (ja) | 2018-09-06 | 2018-09-06 | 単結晶成長方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020040843A JP2020040843A (ja) | 2020-03-19 |
JP7166111B2 true JP7166111B2 (ja) | 2022-11-07 |
Family
ID=69719059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018167063A Active JP7166111B2 (ja) | 2018-09-06 | 2018-09-06 | 単結晶成長方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11111599B2 (ja) |
JP (1) | JP7166111B2 (ja) |
CN (1) | CN110878427B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7170470B2 (ja) | 2018-09-06 | 2022-11-14 | 昭和電工株式会社 | 単結晶成長用坩堝及び単結晶成長方法 |
CN112030232B (zh) * | 2020-09-10 | 2021-07-23 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长坩埚及生长方法 |
CN113622016B (zh) * | 2021-08-17 | 2022-04-19 | 福建北电新材料科技有限公司 | 碳化硅晶体生长装置和晶体生长方法 |
CN114032607B (zh) * | 2021-11-02 | 2024-01-09 | 西北工业大学 | 一种采用碳化锆籽晶制备碳化锆晶须的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015212207A (ja) | 2014-05-02 | 2015-11-26 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴットの製造方法 |
CN105734671A (zh) | 2014-12-10 | 2016-07-06 | 北京天科合达半导体股份有限公司 | 一种高质量碳化硅晶体生长的方法 |
JP2019156660A (ja) | 2018-03-08 | 2019-09-19 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH061698A (ja) * | 1992-06-19 | 1994-01-11 | Sharp Corp | 炭化珪素バルク単結晶の製造方法 |
JP4089073B2 (ja) | 1999-03-23 | 2008-05-21 | 株式会社デンソー | 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法 |
US6514338B2 (en) * | 1999-12-27 | 2003-02-04 | Showa Denko Kabushiki Kaisha | Method and apparatus for producing silicon carbide single crystal |
CN1282770C (zh) | 2003-12-24 | 2006-11-01 | 山东大学 | 一种生长具有半导体特性的大直径6H-SiC单晶的装置和方法 |
JP2010275166A (ja) * | 2009-06-01 | 2010-12-09 | Mitsubishi Electric Corp | 炭化珪素単結晶の製造方法 |
JP2011178590A (ja) | 2010-02-26 | 2011-09-15 | Showa Denko Kk | 成分調整部材及びそれを備えた単結晶成長装置 |
JP5516167B2 (ja) | 2010-07-13 | 2014-06-11 | 株式会社デンソー | 炭化珪素単結晶の製造装置 |
CN104246023B (zh) * | 2012-04-20 | 2019-02-01 | 贰陆股份公司 | 大直径高品质的SiC单晶、方法和设备 |
JP6230106B2 (ja) | 2013-07-31 | 2017-11-15 | 太平洋セメント株式会社 | 炭化珪素単結晶の製造方法 |
CN207498521U (zh) * | 2017-11-02 | 2018-06-15 | 福建北电新材料科技有限公司 | 一种提升质量的碳化硅单晶生长装置 |
JP7170470B2 (ja) * | 2018-09-06 | 2022-11-14 | 昭和電工株式会社 | 単結晶成長用坩堝及び単結晶成長方法 |
-
2018
- 2018-09-06 JP JP2018167063A patent/JP7166111B2/ja active Active
-
2019
- 2019-08-15 CN CN201910751559.0A patent/CN110878427B/zh active Active
- 2019-09-04 US US16/559,875 patent/US11111599B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015212207A (ja) | 2014-05-02 | 2015-11-26 | 新日鐵住金株式会社 | 炭化珪素単結晶インゴットの製造方法 |
CN105734671A (zh) | 2014-12-10 | 2016-07-06 | 北京天科合达半导体股份有限公司 | 一种高质量碳化硅晶体生长的方法 |
JP2019156660A (ja) | 2018-03-08 | 2019-09-19 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110878427B (zh) | 2021-08-31 |
US20200080229A1 (en) | 2020-03-12 |
US11111599B2 (en) | 2021-09-07 |
JP2020040843A (ja) | 2020-03-19 |
CN110878427A (zh) | 2020-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7166111B2 (ja) | 単結晶成長方法 | |
JP5562641B2 (ja) | マイクロパイプ・フリーの炭化ケイ素およびその製造方法 | |
JP7258273B2 (ja) | SiC単結晶の製造方法及び被覆部材 | |
JP2008037684A (ja) | 単結晶炭化ケイ素種結晶の液相生成方法及び単結晶炭化ケイ素種結晶、単結晶炭化ケイ素種結晶板の液相エピタキシャル生成方法及び単結晶炭化ケイ素種結晶板、単結晶炭化ケイ素種結晶基板の生成方法及び単結晶炭化ケイ素種結晶基板 | |
JP7170470B2 (ja) | 単結晶成長用坩堝及び単結晶成長方法 | |
US11846040B2 (en) | Silicon carbide single crystal | |
KR101747685B1 (ko) | 단결정 성장 용기 및 이를 이용한 단결정 성장 방법 | |
JP5397503B2 (ja) | 単結晶成長装置 | |
JP7242978B2 (ja) | SiC単結晶インゴットの製造方法 | |
JP2005220017A (ja) | 単結晶の製造方法 | |
US20210172085A1 (en) | SiC SUBSTRATE AND SiC SINGLE CRYSTAL MANUFACTURING METHOD | |
KR102228137B1 (ko) | Pvt 장치에 사용되는 단결정 성장 용기 및 이를 이용한 단결정 성장 방법 | |
EP4174224A1 (en) | Method for producing sic crystals | |
EP4206366A1 (en) | Sic polycrystal manufacturing method | |
JP7306217B2 (ja) | 坩堝及びSiC単結晶成長装置 | |
JP7305818B1 (ja) | 炭化ケイ素単結晶成長の熱場調整方法 | |
JP2010241619A (ja) | 炭化ケイ素単結晶の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220524 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220722 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220927 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221025 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7166111 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |