CN109402731A - 一种高纯半绝缘碳化硅晶体生长装置及其方法 - Google Patents
一种高纯半绝缘碳化硅晶体生长装置及其方法 Download PDFInfo
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- CN109402731A CN109402731A CN201811209654.XA CN201811209654A CN109402731A CN 109402731 A CN109402731 A CN 109402731A CN 201811209654 A CN201811209654 A CN 201811209654A CN 109402731 A CN109402731 A CN 109402731A
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- crucible
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- silicon carbide
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000012010 growth Effects 0.000 claims abstract description 101
- 239000002994 raw material Substances 0.000 claims abstract description 100
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 26
- 239000010439 graphite Substances 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims description 47
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 229910052786 argon Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 230000006698 induction Effects 0.000 claims description 14
- 238000002386 leaching Methods 0.000 claims description 13
- 229910052571 earthenware Inorganic materials 0.000 claims description 10
- 238000002109 crystal growth method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000007770 graphite material Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- XUKUURHRXDUEBC-SXOMAYOGSA-N (3s,5r)-7-[2-(4-fluorophenyl)-3-phenyl-4-(phenylcarbamoyl)-5-propan-2-ylpyrrol-1-yl]-3,5-dihydroxyheptanoic acid Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@@H](O)C[C@H](O)CC(O)=O)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 XUKUURHRXDUEBC-SXOMAYOGSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811209654.XA CN109402731B (zh) | 2018-10-17 | 2018-10-17 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
US17/286,358 US11851784B2 (en) | 2018-10-17 | 2019-10-14 | Apparatus and method for growing high-purity semi-insulating silicon carbide crystal |
PCT/CN2019/111083 WO2020078328A1 (zh) | 2018-10-17 | 2019-10-14 | 高纯半绝缘碳化硅晶体生长装置及其方法 |
Applications Claiming Priority (1)
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CN201811209654.XA CN109402731B (zh) | 2018-10-17 | 2018-10-17 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
Publications (2)
Publication Number | Publication Date |
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CN109402731A true CN109402731A (zh) | 2019-03-01 |
CN109402731B CN109402731B (zh) | 2021-01-15 |
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CN201811209654.XA Active CN109402731B (zh) | 2018-10-17 | 2018-10-17 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11851784B2 (zh) |
CN (1) | CN109402731B (zh) |
WO (1) | WO2020078328A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109911899A (zh) * | 2019-03-07 | 2019-06-21 | 莫铂桑(北京)科技有限公司 | 一种无色莫桑石的制备方法 |
WO2020078328A1 (zh) * | 2018-10-17 | 2020-04-23 | 福建北电新材料科技有限公司 | 高纯半绝缘碳化硅晶体生长装置及其方法 |
CN111424320A (zh) * | 2020-05-27 | 2020-07-17 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长用坩埚、生长方法和生长装置 |
CN112144110A (zh) * | 2020-09-23 | 2020-12-29 | 中电化合物半导体有限公司 | Pvt法生长碳化硅晶体的生长方法 |
CN113122915A (zh) * | 2021-04-19 | 2021-07-16 | 福建北电新材料科技有限公司 | 镀层方格、坩埚装置和晶体生长方法 |
CN113522393A (zh) * | 2021-07-01 | 2021-10-22 | 北京科技大学 | 一种嵌套式平衡坩埚及控制方法 |
WO2022106642A1 (en) * | 2020-11-19 | 2022-05-27 | Zadient Technologies SAS | Improved furnace apparatus for crystal production |
CN115125613A (zh) * | 2022-06-17 | 2022-09-30 | 江苏集芯半导体硅材料研究院有限公司 | 一种制备单晶碳化硅的生长装置 |
CN115386957A (zh) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | 一种高质量碳化硅晶体生长坩埚 |
CN115852491A (zh) * | 2023-03-03 | 2023-03-28 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 减少碳化硅晶体缺陷的坩埚结构及碳化硅单晶制备方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022123077A1 (en) * | 2020-12-11 | 2022-06-16 | Zadient Technologies SAS | Method and device for producing a sic solid material |
CN115819088B (zh) * | 2023-02-21 | 2023-05-05 | 宁波合盛新材料有限公司 | 碳化硅晶体生长装置、其过滤材料以及过滤材料的制备方法 |
CN116516467A (zh) * | 2023-04-13 | 2023-08-01 | 通威微电子有限公司 | 碳化硅晶体生长热场装置 |
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US20060144324A1 (en) * | 2002-09-19 | 2006-07-06 | Yasuyuki Sakaguchi | Silicon carbide single crystal and method and apparatus for producing the same |
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CN109402731B (zh) * | 2018-10-17 | 2021-01-15 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
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CN108624963A (zh) * | 2018-05-16 | 2018-10-09 | 福建北电新材料科技有限公司 | 一种用于pvt法生长的碳化硅晶体的原料烧结工艺 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020078328A1 (zh) * | 2018-10-17 | 2020-04-23 | 福建北电新材料科技有限公司 | 高纯半绝缘碳化硅晶体生长装置及其方法 |
US11851784B2 (en) | 2018-10-17 | 2023-12-26 | Fujian Beidian Material Technologies Co., Ltd. | Apparatus and method for growing high-purity semi-insulating silicon carbide crystal |
CN109911899B (zh) * | 2019-03-07 | 2023-01-03 | 江苏超芯星半导体有限公司 | 一种无色莫桑石的制备方法 |
CN109911899A (zh) * | 2019-03-07 | 2019-06-21 | 莫铂桑(北京)科技有限公司 | 一种无色莫桑石的制备方法 |
CN111424320A (zh) * | 2020-05-27 | 2020-07-17 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长用坩埚、生长方法和生长装置 |
CN111424320B (zh) * | 2020-05-27 | 2021-02-12 | 中电化合物半导体有限公司 | 一种碳化硅单晶生长用坩埚、生长方法和生长装置 |
CN112144110A (zh) * | 2020-09-23 | 2020-12-29 | 中电化合物半导体有限公司 | Pvt法生长碳化硅晶体的生长方法 |
CN112144110B (zh) * | 2020-09-23 | 2021-07-23 | 中电化合物半导体有限公司 | Pvt法生长碳化硅晶体的生长方法 |
WO2022106635A1 (en) * | 2020-11-19 | 2022-05-27 | Zadient Technologies SAS | Improved furnace apparatus for crystal production |
WO2022106642A1 (en) * | 2020-11-19 | 2022-05-27 | Zadient Technologies SAS | Improved furnace apparatus for crystal production |
CN113122915B (zh) * | 2021-04-19 | 2022-05-10 | 福建北电新材料科技有限公司 | 镀层方格、坩埚装置和晶体生长方法 |
CN113122915A (zh) * | 2021-04-19 | 2021-07-16 | 福建北电新材料科技有限公司 | 镀层方格、坩埚装置和晶体生长方法 |
CN113522393A (zh) * | 2021-07-01 | 2021-10-22 | 北京科技大学 | 一种嵌套式平衡坩埚及控制方法 |
CN115125613A (zh) * | 2022-06-17 | 2022-09-30 | 江苏集芯半导体硅材料研究院有限公司 | 一种制备单晶碳化硅的生长装置 |
CN115125613B (zh) * | 2022-06-17 | 2024-05-10 | 江苏集芯先进材料有限公司 | 一种制备单晶碳化硅的生长装置 |
CN115386957A (zh) * | 2022-07-08 | 2022-11-25 | 安徽微芯长江半导体材料有限公司 | 一种高质量碳化硅晶体生长坩埚 |
CN115852491A (zh) * | 2023-03-03 | 2023-03-28 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 减少碳化硅晶体缺陷的坩埚结构及碳化硅单晶制备方法 |
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CN109402731B (zh) | 2021-01-15 |
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