CN205474111U - 消除碳化硅单晶生长过程中硅对石墨体腐蚀的装置 - Google Patents
消除碳化硅单晶生长过程中硅对石墨体腐蚀的装置 Download PDFInfo
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- CN205474111U CN205474111U CN201620103701.2U CN201620103701U CN205474111U CN 205474111 U CN205474111 U CN 205474111U CN 201620103701 U CN201620103701 U CN 201620103701U CN 205474111 U CN205474111 U CN 205474111U
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- graphite
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- silicon carbide
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 65
- 239000010439 graphite Substances 0.000 title claims abstract description 65
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 12
- 239000010703 silicon Substances 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 title claims abstract description 10
- 230000008030 elimination Effects 0.000 title claims abstract description 8
- 238000003379 elimination reaction Methods 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 abstract description 16
- 229910052715 tantalum Inorganic materials 0.000 abstract description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000004821 distillation Methods 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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CN201620103701.2U CN205474111U (zh) | 2016-02-02 | 2016-02-02 | 消除碳化硅单晶生长过程中硅对石墨体腐蚀的装置 |
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CN201620103701.2U CN205474111U (zh) | 2016-02-02 | 2016-02-02 | 消除碳化硅单晶生长过程中硅对石墨体腐蚀的装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543964A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 消除碳化硅单晶生长过程中硅对石墨体腐蚀的方法和装置 |
CN109402731A (zh) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
CN112850713A (zh) * | 2020-06-09 | 2021-05-28 | 北京世纪金光半导体有限公司 | 一种碳化硅粉料的合成及处理方法 |
-
2016
- 2016-02-02 CN CN201620103701.2U patent/CN205474111U/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543964A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 消除碳化硅单晶生长过程中硅对石墨体腐蚀的方法和装置 |
CN109402731A (zh) * | 2018-10-17 | 2019-03-01 | 福建北电新材料科技有限公司 | 一种高纯半绝缘碳化硅晶体生长装置及其方法 |
US11851784B2 (en) | 2018-10-17 | 2023-12-26 | Fujian Beidian Material Technologies Co., Ltd. | Apparatus and method for growing high-purity semi-insulating silicon carbide crystal |
CN112850713A (zh) * | 2020-06-09 | 2021-05-28 | 北京世纪金光半导体有限公司 | 一种碳化硅粉料的合成及处理方法 |
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