DE60125472D1 - SiC Material und Verfahren zu seiner Herstellung - Google Patents

SiC Material und Verfahren zu seiner Herstellung

Info

Publication number
DE60125472D1
DE60125472D1 DE60125472T DE60125472T DE60125472D1 DE 60125472 D1 DE60125472 D1 DE 60125472D1 DE 60125472 T DE60125472 T DE 60125472T DE 60125472 T DE60125472 T DE 60125472T DE 60125472 D1 DE60125472 D1 DE 60125472D1
Authority
DE
Germany
Prior art keywords
preparation
sic material
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60125472T
Other languages
English (en)
Other versions
DE60125472T3 (de
DE60125472T2 (de
Inventor
Sugihara Takaomi
Kanai Kenichi
Tahara Tomonori
Kuroyanagi Akihiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18726295&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE60125472(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Publication of DE60125472D1 publication Critical patent/DE60125472D1/de
Application granted granted Critical
Publication of DE60125472T2 publication Critical patent/DE60125472T2/de
Publication of DE60125472T3 publication Critical patent/DE60125472T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/956Silicon carbide
    • C01B32/963Preparation from compounds containing silicon
    • C01B32/977Preparation from organic compounds containing silicon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057Carbides
    • C04B41/5059Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81Coating or impregnation
    • C04B41/85Coating or impregnation with inorganic materials
    • C04B41/87Ceramics
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/50Solid solutions
    • C01P2002/52Solid solutions containing elements as dopants
    • C01P2002/54Solid solutions containing elements as dopants one element only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/10Solid density
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/40Electric properties
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/60Optical properties, e.g. expressed in CIELAB-values
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/722Nitrogen content
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/76Crystal structural characteristics, e.g. symmetry
    • C04B2235/762Cubic symmetry, e.g. beta-SiC
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607Thermal properties, e.g. thermal expansion coefficient
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • C04B2235/9653Translucent or transparent ceramics other than alumina
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9669Resistance against chemicals, e.g. against molten glass or molten salts
    • C04B2235/9692Acid, alkali or halogen resistance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60125472T 2000-08-02 2001-05-05 SiC Material und Verfahren zu seiner Herstellung Expired - Lifetime DE60125472T3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000233828 2000-08-02
JP2000233828A JP2002047066A (ja) 2000-08-02 2000-08-02 SiC成形体およびその製造方法

Publications (3)

Publication Number Publication Date
DE60125472D1 true DE60125472D1 (de) 2007-02-08
DE60125472T2 DE60125472T2 (de) 2007-10-25
DE60125472T3 DE60125472T3 (de) 2010-08-26

Family

ID=18726295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60125472T Expired - Lifetime DE60125472T3 (de) 2000-08-02 2001-05-05 SiC Material und Verfahren zu seiner Herstellung

Country Status (7)

Country Link
US (1) US6893749B2 (de)
EP (1) EP1178132B2 (de)
JP (1) JP2002047066A (de)
KR (1) KR100775879B1 (de)
DE (1) DE60125472T3 (de)
SG (1) SG96218A1 (de)
TW (1) TW554066B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939821B2 (en) * 2000-02-24 2005-09-06 Shipley Company, L.L.C. Low resistivity silicon carbide
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide
KR101139910B1 (ko) 2009-09-09 2012-04-30 주식회사 티씨케이 실리콘 카바이드 복합체 및 그 제조방법
JP5153826B2 (ja) * 2010-05-17 2013-02-27 日本ピラー工業株式会社 超純水用の炭化珪素質摺動部材
CN102640211B (zh) 2010-12-01 2013-11-20 雅马哈株式会社 根据与节奏模式的相似度搜索乐音数据组
JP5896297B2 (ja) * 2012-08-01 2016-03-30 東海カーボン株式会社 CVD−SiC成形体およびCVD−SiC成形体の製造方法
KR101817217B1 (ko) * 2015-11-17 2018-01-12 세메스 주식회사 척핀, 척핀 제조 방법 및 기판 처리 장치
WO2018043169A1 (ja) * 2016-08-31 2018-03-08 昭和電工株式会社 SiCエピタキシャルウェハ及びその製造方法、並びに、ラージピット欠陥検出方法、欠陥識別方法
US11293115B2 (en) 2016-08-31 2022-04-05 Showa Denko K.K. Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
KR20180132545A (ko) 2017-06-02 2018-12-12 (주) 디에스테크노 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크
KR20210003709A (ko) 2018-06-01 2021-01-12 (주) 디에스테크노 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크
JP6889133B2 (ja) * 2018-08-31 2021-06-18 株式会社フェローテックホールディングス 熱伝導異方性SiC材
KR102096787B1 (ko) 2019-06-11 2020-04-03 주식회사 바이테크 다층 구조의 다결정 탄화규소 성형체의 제조방법
KR102188258B1 (ko) 2020-04-27 2020-12-09 주식회사 바이테크 일체형 다층 구조의 다결정 탄화규소 성형체 제조방법과 다결정 탄화규소 성형체 및 플라즈마 공정장비용 샤워헤드
EP4001475A1 (de) 2020-11-19 2022-05-25 Zadient Technologies SAS Verbessertes ofengerät zur herstellung von kristallen
US11827999B2 (en) * 2021-01-12 2023-11-28 Applied Materials, Inc. Methods of forming silicon carbide coated base substrates at multiple temperatures
CN117790844B (zh) * 2024-02-27 2024-05-24 氢质氢离(北京)氢能科技有限公司 燃料电池发动机氢腔氮气浓度控制策略及试验标定方法

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Publication number Priority date Publication date Assignee Title
US3859399A (en) * 1971-04-19 1975-01-07 Carborundum Co Dense composite ceramic bodies and method for their production
JPS60255697A (ja) * 1984-05-31 1985-12-17 Sharp Corp 炭化珪素単結晶の不純物濃度制御方法
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
US4772498A (en) * 1986-11-20 1988-09-20 Air Products And Chemicals, Inc. Silicon carbide capillaries
US5313078A (en) * 1991-12-04 1994-05-17 Sharp Kabushiki Kaisha Multi-layer silicon carbide light emitting diode having a PN junction
US5656098A (en) * 1992-03-03 1997-08-12 Canon Kabushiki Kaisha Photovoltaic conversion device and method for producing same
US5801073A (en) * 1995-05-25 1998-09-01 Charles Stark Draper Laboratory Net-shape ceramic processing for electronic devices and packages
KR20010029493A (ko) * 1997-02-10 2001-04-06 무네유키 가코우 자기기록매체
JP3432401B2 (ja) 1997-10-24 2003-08-04 株式会社沖データ 画像記録装置
JP4043003B2 (ja) * 1998-02-09 2008-02-06 東海カーボン株式会社 SiC成形体及びその製造方法
DE69923567T2 (de) * 1998-08-07 2006-02-16 Bridgestone Corp. Verfahren zur herstellung eines siliciumcarbidsinterkörpers
JP2000239827A (ja) * 1998-12-22 2000-09-05 Bridgestone Corp 積層構造体及びその製造方法
EP1043420A1 (de) * 1999-04-07 2000-10-11 Ngk Insulators, Ltd. Siliziumkarbid-Formkörper
US7018947B2 (en) * 2000-02-24 2006-03-28 Shipley Company, L.L.C. Low resistivity silicon carbide

Also Published As

Publication number Publication date
KR20020011860A (ko) 2002-02-09
EP1178132B1 (de) 2006-12-27
JP2002047066A (ja) 2002-02-12
SG96218A1 (en) 2003-05-23
US20020037801A1 (en) 2002-03-28
EP1178132B2 (de) 2010-05-19
TW554066B (en) 2003-09-21
US6893749B2 (en) 2005-05-17
EP1178132A2 (de) 2002-02-06
DE60125472T3 (de) 2010-08-26
KR100775879B1 (ko) 2007-11-13
EP1178132A3 (de) 2003-06-25
DE60125472T2 (de) 2007-10-25

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