DE60124246D1 - Polykristallines silicium und verfahren zur herstellung desselben - Google Patents

Polykristallines silicium und verfahren zur herstellung desselben

Info

Publication number
DE60124246D1
DE60124246D1 DE60124246T DE60124246T DE60124246D1 DE 60124246 D1 DE60124246 D1 DE 60124246D1 DE 60124246 T DE60124246 T DE 60124246T DE 60124246 T DE60124246 T DE 60124246T DE 60124246 D1 DE60124246 D1 DE 60124246D1
Authority
DE
Germany
Prior art keywords
production
polycrystalline silicon
polycrystalline
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124246T
Other languages
English (en)
Other versions
DE60124246T2 (de
Inventor
Satoru Wakamatsu
Hiroyuki Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of DE60124246D1 publication Critical patent/DE60124246D1/de
Application granted granted Critical
Publication of DE60124246T2 publication Critical patent/DE60124246T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J10/00—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor
    • B01J10/005—Chemical processes in general for reacting liquid with gaseous media other than in the presence of solid particles, or apparatus specially adapted therefor carried out at high temperatures in the presence of a molten material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/0009—Coils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00094—Jackets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00159—Controlling the temperature controlling multiple zones along the direction of flow, e.g. pre-heating and after-cooling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE60124246T 2000-05-11 2001-05-09 Polykristallines silicium und verfahren zur herstellung desselben Expired - Lifetime DE60124246T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000139023 2000-05-11
JP2000139023 2000-05-11
PCT/JP2001/003865 WO2001085613A1 (fr) 2000-05-11 2001-05-09 Silicium polycristallin et procede et appareil de production correspondants

Publications (2)

Publication Number Publication Date
DE60124246D1 true DE60124246D1 (de) 2006-12-14
DE60124246T2 DE60124246T2 (de) 2007-05-31

Family

ID=18646543

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60124246T Expired - Lifetime DE60124246T2 (de) 2000-05-11 2001-05-09 Polykristallines silicium und verfahren zur herstellung desselben
DE60142808T Expired - Lifetime DE60142808D1 (de) 2000-05-11 2001-05-09 Vorrichtung zur Herstellung polykristallines Silizium

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60142808T Expired - Lifetime DE60142808D1 (de) 2000-05-11 2001-05-09 Vorrichtung zur Herstellung polykristallines Silizium

Country Status (10)

Country Link
US (1) US6861144B2 (de)
EP (2) EP1719736B1 (de)
KR (1) KR100692444B1 (de)
CN (2) CN1224574C (de)
AU (1) AU770276C (de)
CA (1) CA2377892C (de)
DE (2) DE60124246T2 (de)
ES (2) ES2274884T3 (de)
NO (2) NO333347B1 (de)
WO (1) WO2001085613A1 (de)

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US7553467B2 (en) * 2003-08-13 2009-06-30 Tokuyama Corporation Tubular reaction vessel and process for producing silicon therewith
CN100347083C (zh) * 2003-08-22 2007-11-07 德山株式会社 硅生产装置
CN1956921B (zh) * 2004-05-21 2012-02-29 德山株式会社 熔融硅的冷却块状物及其制造方法
JP4545505B2 (ja) * 2004-07-22 2010-09-15 株式会社トクヤマ シリコンの製造方法
EP1798198B1 (de) * 2004-08-11 2013-12-25 Tokuyama Corporation Vorrichtung zur herstellung von silicium
US7727483B2 (en) * 2004-08-19 2010-06-01 Tokuyama Corporation Reactor for chlorosilane compound
CA2577713C (en) * 2004-08-19 2011-11-15 Tokuyama Corporation Reaction apparatus of the chlorosilanes
CA2587222C (en) * 2004-11-30 2011-05-10 Space Energy Corporation Process for producing a polycrystalline silicon ingot
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US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
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JP5205910B2 (ja) * 2006-10-31 2013-06-05 三菱マテリアル株式会社 トリクロロシラン製造装置
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Also Published As

Publication number Publication date
CA2377892C (en) 2009-02-03
CN1224574C (zh) 2005-10-26
EP1285880B1 (de) 2006-11-02
AU5667001A (en) 2001-11-20
NO20020117L (no) 2002-03-06
NO333347B1 (no) 2013-05-13
KR20020026526A (ko) 2002-04-10
ES2274884T3 (es) 2007-06-01
NO20120619L (no) 2002-03-06
EP1285880A4 (de) 2004-05-26
DE60124246T2 (de) 2007-05-31
DE60142808D1 (de) 2010-09-23
CA2377892A1 (en) 2001-11-15
AU770276C (en) 2004-09-23
US20020104474A1 (en) 2002-08-08
CN100406378C (zh) 2008-07-30
EP1719736A1 (de) 2006-11-08
EP1719736B1 (de) 2010-08-11
WO2001085613A1 (fr) 2001-11-15
US6861144B2 (en) 2005-03-01
CN1372530A (zh) 2002-10-02
EP1285880A1 (de) 2003-02-26
NO20020117D0 (no) 2002-01-10
AU770276B2 (en) 2004-02-19
KR100692444B1 (ko) 2007-03-09
CN1699161A (zh) 2005-11-23
ES2350591T3 (es) 2011-01-25

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