DE69940737D1 - Verfahren zur herstellung einer halbleiteranordnung - Google Patents

Verfahren zur herstellung einer halbleiteranordnung

Info

Publication number
DE69940737D1
DE69940737D1 DE69940737T DE69940737T DE69940737D1 DE 69940737 D1 DE69940737 D1 DE 69940737D1 DE 69940737 T DE69940737 T DE 69940737T DE 69940737 T DE69940737 T DE 69940737T DE 69940737 D1 DE69940737 D1 DE 69940737D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69940737T
Other languages
English (en)
Inventor
Hiroshi Iwata
Seizo Kakimoto
Masayuki Nakano
Kouichiro Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69940737D1 publication Critical patent/DE69940737D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/783—Field effect transistors with field effect produced by an insulated gate comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
DE69940737T 1998-06-30 1999-06-29 Verfahren zur herstellung einer halbleiteranordnung Expired - Lifetime DE69940737D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18346698 1998-06-30
PCT/JP1999/003483 WO2000001015A1 (fr) 1998-06-30 1999-06-29 Dispositif semi-conducteur et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE69940737D1 true DE69940737D1 (de) 2009-05-28

Family

ID=16136291

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69940737T Expired - Lifetime DE69940737D1 (de) 1998-06-30 1999-06-29 Verfahren zur herstellung einer halbleiteranordnung

Country Status (5)

Country Link
US (2) US6426532B1 (de)
EP (1) EP1100128B1 (de)
KR (1) KR100349768B1 (de)
DE (1) DE69940737D1 (de)
WO (1) WO2000001015A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3523093B2 (ja) * 1997-11-28 2004-04-26 株式会社東芝 半導体装置およびその製造方法
WO2000001015A1 (fr) * 1998-06-30 2000-01-06 Sharp Kabushiki Kaisha Dispositif semi-conducteur et son procede de fabrication
US6617226B1 (en) * 1999-06-30 2003-09-09 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
EP1246258B1 (de) * 2000-01-07 2011-02-23 Sharp Kabushiki Kaisha Halbleiteranordnung und informationsverarbeitungsanordnung
KR100372643B1 (ko) * 2000-06-30 2003-02-17 주식회사 하이닉스반도체 다마신 공정을 이용한 반도체 소자의 제조방법
JP4614522B2 (ja) * 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2002237575A (ja) * 2001-02-08 2002-08-23 Sharp Corp 半導体装置及びその製造方法
US20040207011A1 (en) * 2001-07-19 2004-10-21 Hiroshi Iwata Semiconductor device, semiconductor storage device and production methods therefor
JP2003031697A (ja) * 2001-07-19 2003-01-31 Sharp Corp スタティック型ランダムアクセスメモリ装置及びその製造方法
JP4193097B2 (ja) * 2002-02-18 2008-12-10 日本電気株式会社 半導体装置およびその製造方法
JP2003332582A (ja) * 2002-05-13 2003-11-21 Toshiba Corp 半導体装置及びその製造方法
US6900091B2 (en) * 2002-08-14 2005-05-31 Advanced Analogic Technologies, Inc. Isolated complementary MOS devices in epi-less substrate
JP2004128121A (ja) * 2002-10-01 2004-04-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2004319853A (ja) * 2003-04-17 2004-11-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004342889A (ja) * 2003-05-16 2004-12-02 Sharp Corp 半導体記憶装置、半導体装置、半導体記憶装置の製造方法、および携帯電子機器
US7137089B1 (en) * 2004-09-01 2006-11-14 National Semiconductor Corporation Systems and methods for reducing IR-drop noise
US20060118869A1 (en) * 2004-12-03 2006-06-08 Je-Hsiung Lan Thin-film transistors and processes for forming the same
CN1945852A (zh) * 2005-10-06 2007-04-11 松下电器产业株式会社 半导体装置及其制造方法
US7659579B2 (en) 2006-10-06 2010-02-09 International Business Machines Corporation FETS with self-aligned bodies and backgate holes
US7534689B2 (en) * 2006-11-21 2009-05-19 Advanced Micro Devices, Inc. Stress enhanced MOS transistor and methods for its fabrication
US7863143B2 (en) * 2008-05-01 2011-01-04 International Business Machines Corporation High performance schottky-barrier-source asymmetric MOSFETs
CN104425522B (zh) * 2013-09-10 2017-10-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法
US9728637B2 (en) 2013-11-14 2017-08-08 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanism for forming semiconductor device with gate

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US4555721A (en) * 1981-05-19 1985-11-26 International Business Machines Corporation Structure of stacked, complementary MOS field effect transistor circuits
US4467518A (en) * 1981-05-19 1984-08-28 Ibm Corporation Process for fabrication of stacked, complementary MOS field effect transistor circuits
US4445267A (en) * 1981-12-30 1984-05-01 International Business Machines Corporation MOSFET Structure and process to form micrometer long source/drain spacing
JPH0732124B2 (ja) 1986-01-24 1995-04-10 シャープ株式会社 半導体装置の製造方法
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WO2000001015A1 (fr) * 1998-06-30 2000-01-06 Sharp Kabushiki Kaisha Dispositif semi-conducteur et son procede de fabrication
US6172405B1 (en) 1998-07-17 2001-01-09 Sharp Kabushiki Kaisha Semiconductor device and production process therefore
JP2000353804A (ja) * 1999-06-11 2000-12-19 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
WO2000001015A1 (fr) 2000-01-06
KR20010083080A (ko) 2001-08-31
KR100349768B1 (ko) 2002-08-24
US6426532B1 (en) 2002-07-30
US20020175374A1 (en) 2002-11-28
EP1100128B1 (de) 2009-04-15
EP1100128A1 (de) 2001-05-16
US6682966B2 (en) 2004-01-27
EP1100128A4 (de) 2005-07-06

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