DE69912376D1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents

Verfahren zur herstellung eines halbleiterbauelements

Info

Publication number
DE69912376D1
DE69912376D1 DE69912376T DE69912376T DE69912376D1 DE 69912376 D1 DE69912376 D1 DE 69912376D1 DE 69912376 T DE69912376 T DE 69912376T DE 69912376 T DE69912376 T DE 69912376T DE 69912376 D1 DE69912376 D1 DE 69912376D1
Authority
DE
Germany
Prior art keywords
producing
method
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69912376T
Other languages
English (en)
Other versions
DE69912376T2 (de
Inventor
P Gogoi
J Monk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US17494 priority Critical
Priority to US09/017,494 priority patent/US6156585A/en
Application filed by Motorola Solutions Inc filed Critical Motorola Solutions Inc
Priority to PCT/US1999/001813 priority patent/WO1999039170A1/en
Application granted granted Critical
Publication of DE69912376D1 publication Critical patent/DE69912376D1/de
Publication of DE69912376T2 publication Critical patent/DE69912376T2/de
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
DE69912376T 1998-02-02 1999-01-28 Verfahren zur herstellung eines halbleiterbauelements Expired - Fee Related DE69912376T2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17494 1998-02-02
US09/017,494 US6156585A (en) 1998-02-02 1998-02-02 Semiconductor component and method of manufacture
PCT/US1999/001813 WO1999039170A1 (en) 1998-02-02 1999-01-28 Method of manufacturing a semiconductor component

Publications (2)

Publication Number Publication Date
DE69912376D1 true DE69912376D1 (de) 2003-12-04
DE69912376T2 DE69912376T2 (de) 2004-05-06

Family

ID=21782909

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69912376T Expired - Fee Related DE69912376T2 (de) 1998-02-02 1999-01-28 Verfahren zur herstellung eines halbleiterbauelements

Country Status (6)

Country Link
US (2) US6156585A (de)
EP (1) EP0995094B1 (de)
JP (1) JP4376322B2 (de)
DE (1) DE69912376T2 (de)
NO (1) NO320502B1 (de)
WO (1) WO1999039170A1 (de)

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DE19961578A1 (de) * 1999-12-21 2001-06-28 Bosch Gmbh Robert Sensor mit zumindest einer mikromechanischen Struktur und Verfahren zur Herstellung
US6860153B2 (en) * 2000-02-22 2005-03-01 Simon Fraser University Gas pressure sensor based on short-distance heat conduction and method for fabricating same
US6647368B2 (en) 2001-03-30 2003-11-11 Think-A-Move, Ltd. Sensor pair for detecting changes within a human ear and producing a signal corresponding to thought, movement, biological function and/or speech
US6671379B2 (en) 2001-03-30 2003-12-30 Think-A-Move, Ltd. Ear microphone apparatus and method
KR100404904B1 (ko) * 2001-06-09 2003-11-07 전자부품연구원 차동 용량형 압력센서 및 그 제조방법
JP4590791B2 (ja) * 2001-07-03 2010-12-01 株式会社デンソー センサの製造方法
US6750076B2 (en) * 2001-09-17 2004-06-15 Advion Biosciences, Inc. Fabrication of a microchip-based electrospray device
US6870939B2 (en) * 2001-11-28 2005-03-22 Industrial Technology Research Institute SMT-type structure of the silicon-based electret condenser microphone
US6829814B1 (en) * 2002-08-29 2004-12-14 Delphi Technologies, Inc. Process of making an all-silicon microphone
US20070073448A1 (en) * 2003-08-19 2007-03-29 Renesas Technology Corp. Semiconductor device having a hole or a step of normal mesa shape as viewed from any cross-section and manufacturing method of the same
JP2005064068A (ja) * 2003-08-19 2005-03-10 Renesas Technology Corp 半導体装置及びその製造方法
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
DE102004010295A1 (de) * 2004-03-03 2005-09-22 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
FI115487B (fi) * 2004-05-03 2005-05-13 Vti Technologies Oy Menetelmä kapasitiivisen paineanturin valmistamiseksi ja kapasitiivinen paineanturi
JP4548771B2 (ja) * 2004-06-25 2010-09-22 株式会社山武 容量式圧力センサの製造方法
US6923069B1 (en) * 2004-10-18 2005-08-02 Honeywell International Inc. Top side reference cavity for absolute pressure sensor
DE102005004877A1 (de) * 2005-02-03 2006-08-10 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
US7449356B2 (en) * 2005-04-25 2008-11-11 Analog Devices, Inc. Process of forming a microphone using support member
US7885423B2 (en) 2005-04-25 2011-02-08 Analog Devices, Inc. Support apparatus for microphone diaphragm
US7825484B2 (en) * 2005-04-25 2010-11-02 Analog Devices, Inc. Micromachined microphone and multisensor and method for producing same
US7683429B2 (en) * 2005-05-31 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Microstructure and manufacturing method of the same
US7317234B2 (en) * 2005-07-20 2008-01-08 Douglas G Marsh Means of integrating a microphone in a standard integrated circuit process
TWI272671B (en) * 2005-10-03 2007-02-01 Touch Micro System Tech Method of forming a cavity by two-step etching and method of reducing dimension of an MEMS device
US7983433B2 (en) 2005-11-08 2011-07-19 Think-A-Move, Ltd. Earset assembly
US7297567B2 (en) * 2006-01-10 2007-11-20 Knowles Electronics, Llc. Method for singulating a released microelectromechanical system wafer
WO2007147049A2 (en) 2006-06-14 2007-12-21 Think-A-Move, Ltd. Ear sensor assembly for speech processing
EP2044802B1 (de) * 2006-07-25 2013-03-27 Analog Devices, Inc. Mehrfachmikrofonsystem
DE102006047203B4 (de) * 2006-10-05 2013-01-31 Austriamicrosystems Ag Mikrophonanordnung und Verfahren zu deren Herstellung
JP4144640B2 (ja) * 2006-10-13 2008-09-03 オムロン株式会社 振動センサの製造方法
TW200847827A (en) * 2006-11-30 2008-12-01 Analog Devices Inc Microphone system with silicon microphone secured to package lid
US20080247573A1 (en) * 2007-04-06 2008-10-09 Novusonic Corporation Miniature capacitive acoustic sensor with stress-relieved actively clamped diaphragm
TWI370495B (de) * 2007-10-18 2012-08-11
US20090155948A1 (en) * 2007-12-18 2009-06-18 National Applied Research Laboratories Methods for manufacturing cmos compatible bio-sensors
CN102143906A (zh) 2008-09-10 2011-08-03 松下电器产业株式会社 微机电系统器件及其制造方法
US7923379B2 (en) * 2008-11-12 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-step process for forming high-aspect-ratio holes for MEMS devices
US8263426B2 (en) * 2008-12-03 2012-09-11 Electronics And Telecommunications Research Institute High-sensitivity z-axis vibration sensor and method of fabricating the same
US7875482B2 (en) * 2009-03-19 2011-01-25 Robert Bosch Gmbh Substrate with multiple encapsulated pressures
US9290067B2 (en) 2012-08-30 2016-03-22 Freescale Semiconductor, Inc. Pressure sensor with differential capacitive output
US9502995B2 (en) * 2012-12-04 2016-11-22 The Regents Of The University Of Michigan Micro-hydraulic device
DE102013217726A1 (de) * 2013-09-05 2015-03-05 Robert Bosch Gmbh Mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung und Herstellungsverfahren für ein mikromechanisches Bauteil für eine kapazitive Sensorvorrichtung
WO2015153938A1 (en) * 2014-04-04 2015-10-08 Robert Bosch Gmbh Membrane-based sensor and method for robust manufacture of a membrane-based sensor

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US3853650A (en) * 1973-02-12 1974-12-10 Honeywell Inc Stress sensor diaphragms over recessed substrates
JPS5516228A (en) * 1978-07-21 1980-02-04 Hitachi Ltd Capacity type sensor
GB2198611B (en) * 1986-12-13 1990-04-04 Spectrol Reliance Ltd Method of forming a sealed diaphragm on a substrate
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US5320705A (en) * 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
GB8921722D0 (en) * 1989-09-26 1989-11-08 British Telecomm Micromechanical switch
US4961821A (en) * 1989-11-22 1990-10-09 Xerox Corporation Ode through holes and butt edges without edge dicing
JP2517467B2 (ja) * 1990-10-05 1996-07-24 山武ハネウエル株式会社 静電容量式圧力センサ
US5189777A (en) * 1990-12-07 1993-03-02 Wisconsin Alumni Research Foundation Method of producing micromachined differential pressure transducers
JP2896725B2 (ja) * 1991-12-26 1999-05-31 株式会社山武 静電容量式圧力センサ
US5323656A (en) * 1992-05-12 1994-06-28 The Foxboro Company Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
US5332469A (en) * 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5424650A (en) * 1993-09-24 1995-06-13 Rosemont Inc. Capacitive pressure sensor having circuitry for eliminating stray capacitance
DE69412769T2 (de) * 1993-12-07 1999-01-14 Matsushita Electric Ind Co Ltd Kapazitiver Sensor und Verfahren zur Herstellung
DE4424015A1 (de) * 1994-07-08 1996-01-11 Ant Nachrichtentech Verfahren zur Erhöhung der lateralen Unterätzung einer strukturierten Schicht
US5479827A (en) * 1994-10-07 1996-01-02 Yamatake-Honeywell Co., Ltd. Capacitive pressure sensor isolating electrodes from external environment
JP3114570B2 (ja) * 1995-05-26 2000-12-04 オムロン株式会社 静電容量型圧力センサ
US5888845A (en) * 1996-05-02 1999-03-30 National Semiconductor Corporation Method of making high sensitivity micro-machined pressure sensors and acoustic transducers
US6069392A (en) * 1997-04-11 2000-05-30 California Institute Of Technology Microbellows actuator

Also Published As

Publication number Publication date
NO994814L (no) 1999-10-04
EP0995094A1 (de) 2000-04-26
NO994814D0 (no) 1999-10-04
JP2001519915A (ja) 2001-10-23
DE69912376T2 (de) 2004-05-06
US6426239B1 (en) 2002-07-30
NO320502B1 (no) 2005-12-12
WO1999039170B1 (en) 1999-09-23
US6156585A (en) 2000-12-05
EP0995094B1 (de) 2003-10-29
WO1999039170A1 (en) 1999-08-05
JP4376322B2 (ja) 2009-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee