DE69736895D1 - Verfahren zur herstellung eines halbleiterspeichers - Google Patents
Verfahren zur herstellung eines halbleiterspeichersInfo
- Publication number
- DE69736895D1 DE69736895D1 DE69736895T DE69736895T DE69736895D1 DE 69736895 D1 DE69736895 D1 DE 69736895D1 DE 69736895 T DE69736895 T DE 69736895T DE 69736895 T DE69736895 T DE 69736895T DE 69736895 D1 DE69736895 D1 DE 69736895D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17890796 | 1996-07-09 | ||
JP17890796 | 1996-07-09 | ||
PCT/JP1997/002322 WO1998001904A1 (fr) | 1996-07-09 | 1997-07-04 | Memoire a semi-conducteur et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69736895D1 true DE69736895D1 (de) | 2006-12-14 |
DE69736895T2 DE69736895T2 (de) | 2007-06-14 |
Family
ID=16056772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69736895T Expired - Fee Related DE69736895T2 (de) | 1996-07-09 | 1997-07-04 | Verfahren zur herstellung eines halbleiterspeichers |
Country Status (8)
Country | Link |
---|---|
US (2) | US6309894B1 (de) |
EP (1) | EP0920054B1 (de) |
JP (1) | JP3948629B2 (de) |
KR (1) | KR100439488B1 (de) |
CN (1) | CN1191625C (de) |
DE (1) | DE69736895T2 (de) |
TW (1) | TW345723B (de) |
WO (1) | WO1998001904A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
US6316797B1 (en) * | 1999-02-19 | 2001-11-13 | Advanced Technology Materials, Inc. | Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material |
JP3415487B2 (ja) * | 1999-06-14 | 2003-06-09 | Necエレクトロニクス株式会社 | 半導体素子の製造方法 |
DE19963500C2 (de) * | 1999-12-28 | 2002-10-02 | Infineon Technologies Ag | Verfahren zum Herstellen einer strukturierten metalloxidhaltigen Schicht, insbesondere einer ferroelektrischen oder paraelektrischen Schicht |
US7315662B2 (en) | 2000-08-25 | 2008-01-01 | N Gimat Co. | Electronic and optical devices and methods of forming these devices |
US6682969B1 (en) * | 2000-08-31 | 2004-01-27 | Micron Technology, Inc. | Top electrode in a strongly oxidizing environment |
JP2002208678A (ja) * | 2001-01-11 | 2002-07-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
DE10105997C1 (de) * | 2001-02-09 | 2002-07-25 | Infineon Technologies Ag | Verfahren zur Herstellung ferroelektrischer Kondensatoren und integrierter Halbleiterspeicherbausteine |
DE10116875B4 (de) * | 2001-04-04 | 2006-06-14 | Infineon Technologies Ag | Verfahren zur Herstellung eines integrierten ferroelektrischen Speichers |
TW563142B (en) * | 2001-07-12 | 2003-11-21 | Hitachi Ltd | Thin film capacitor, and electronic circuit component |
KR20030013123A (ko) * | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | 커패시터를 갖는 반도체 장치 및 그의 제조 방법 |
DE10207130B4 (de) * | 2002-02-20 | 2007-09-27 | Infineon Technologies Ag | Verfahren zur Herstellung eines Bauelements sowie Bauelement mit einer Edelmetallschicht, einer Edelmetallsilizidschicht und einer oxidierten Silizidschicht |
US6803275B1 (en) * | 2002-12-03 | 2004-10-12 | Fasl, Llc | ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices |
US7033957B1 (en) | 2003-02-05 | 2006-04-25 | Fasl, Llc | ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices |
JP4901105B2 (ja) * | 2003-04-15 | 2012-03-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2005109068A (ja) * | 2003-09-30 | 2005-04-21 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP4522088B2 (ja) * | 2003-12-22 | 2010-08-11 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
CN100463182C (zh) * | 2004-10-19 | 2009-02-18 | 精工爱普生株式会社 | 铁电体存储器及其制造方法 |
JP2006261328A (ja) | 2005-03-16 | 2006-09-28 | Fujitsu Ltd | 容量素子、半導体装置、及び容量素子の製造方法 |
US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
US7916513B2 (en) * | 2008-11-05 | 2011-03-29 | Seagate Technology Llc | Non-destructive read back for ferroelectric data storage device |
CN101476104B (zh) * | 2008-12-24 | 2011-07-20 | 南京大学 | 一种高介电系数锆硅氧薄膜和制备方法及其应用 |
CN102683583B (zh) * | 2011-03-15 | 2014-04-09 | 北京大学 | 单极阻变存储器及其制造方法 |
CN103236499B (zh) * | 2013-05-07 | 2016-01-20 | 山东科技大学 | 一种单极型忆阻器及其制备方法 |
CN103346255B (zh) * | 2013-06-26 | 2014-12-10 | 济南大学 | 一种异质结、铁电隧道结及其制备方法和应用 |
US11134868B2 (en) | 2017-03-17 | 2021-10-05 | Medtronic Minimed, Inc. | Metal pillar device structures and methods for making and using them in electrochemical and/or electrocatalytic applications |
KR20190008049A (ko) * | 2017-07-14 | 2019-01-23 | 에스케이하이닉스 주식회사 | 강유전성 메모리 소자의 제조 방법 |
US10614868B2 (en) | 2018-04-16 | 2020-04-07 | Samsung Electronics Co., Ltd. | Memory device with strong polarization coupling |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5413234A (en) * | 1992-02-12 | 1995-05-09 | Continental White Cap, Inc. | Tamper evident closure |
EP0557937A1 (de) * | 1992-02-25 | 1993-09-01 | Ramtron International Corporation | Ozongasverarbeitung für ferroelektrischen Speicherschaltungen |
JPH0793969A (ja) * | 1993-09-22 | 1995-04-07 | Olympus Optical Co Ltd | 強誘電体容量素子 |
JPH07263570A (ja) * | 1994-03-17 | 1995-10-13 | Fujitsu Ltd | 誘電体装置の製造方法 |
US5909043A (en) * | 1994-06-02 | 1999-06-01 | Texas Instruments Incorporated | Sacrificial oxygen sources to prevent reduction of oxygen containing materials |
JPH0855967A (ja) * | 1994-07-29 | 1996-02-27 | Texas Instr Inc <Ti> | 強誘電体薄膜キャパシタの製造方法 |
KR0144932B1 (ko) * | 1995-01-26 | 1998-07-01 | 김광호 | 반도체 장치의 캐패시터 및 그 제조방법 |
-
1997
- 1997-06-28 TW TW086109097A patent/TW345723B/zh active
- 1997-07-04 US US09/214,382 patent/US6309894B1/en not_active Expired - Fee Related
- 1997-07-04 JP JP50504798A patent/JP3948629B2/ja not_active Expired - Fee Related
- 1997-07-04 KR KR10-1998-0710894A patent/KR100439488B1/ko not_active IP Right Cessation
- 1997-07-04 EP EP97929524A patent/EP0920054B1/de not_active Expired - Lifetime
- 1997-07-04 WO PCT/JP1997/002322 patent/WO1998001904A1/ja active IP Right Grant
- 1997-07-04 DE DE69736895T patent/DE69736895T2/de not_active Expired - Fee Related
- 1997-07-04 CN CNB971971862A patent/CN1191625C/zh not_active Expired - Fee Related
-
2001
- 2001-10-03 US US09/968,921 patent/US6420192B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69736895T2 (de) | 2007-06-14 |
WO1998001904A1 (fr) | 1998-01-15 |
US6309894B1 (en) | 2001-10-30 |
CN1191625C (zh) | 2005-03-02 |
TW345723B (en) | 1998-11-21 |
CN1227669A (zh) | 1999-09-01 |
EP0920054A1 (de) | 1999-06-02 |
US6420192B2 (en) | 2002-07-16 |
JP3948629B2 (ja) | 2007-07-25 |
EP0920054B1 (de) | 2006-11-02 |
KR20000022458A (ko) | 2000-04-25 |
EP0920054A4 (de) | 2002-08-14 |
KR100439488B1 (ko) | 2004-09-18 |
US20020013006A1 (en) | 2002-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |