DE69739274D1 - Verfahren zur Herstellung eines vertikalen Kondensators - Google Patents
Verfahren zur Herstellung eines vertikalen KondensatorsInfo
- Publication number
- DE69739274D1 DE69739274D1 DE69739274T DE69739274T DE69739274D1 DE 69739274 D1 DE69739274 D1 DE 69739274D1 DE 69739274 T DE69739274 T DE 69739274T DE 69739274 T DE69739274 T DE 69739274T DE 69739274 D1 DE69739274 D1 DE 69739274D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- vertical capacitor
- capacitor
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2916696P | 1996-10-25 | 1996-10-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69739274D1 true DE69739274D1 (de) | 2009-04-09 |
Family
ID=21847594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69739274T Expired - Lifetime DE69739274D1 (de) | 1996-10-25 | 1997-10-27 | Verfahren zur Herstellung eines vertikalen Kondensators |
Country Status (6)
Country | Link |
---|---|
US (1) | US6033919A (de) |
EP (1) | EP0838852B1 (de) |
JP (1) | JPH10154801A (de) |
KR (1) | KR100492435B1 (de) |
DE (1) | DE69739274D1 (de) |
TW (1) | TW368717B (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6180446B1 (en) * | 1997-12-17 | 2001-01-30 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing |
US6171898B1 (en) * | 1997-12-17 | 2001-01-09 | Texas Instruments Incorporated | Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing |
US6184074B1 (en) * | 1997-12-17 | 2001-02-06 | Texas Instruments Incorporated | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS |
US6281542B1 (en) * | 1998-04-14 | 2001-08-28 | Tsmc-Acer Semiconductor Manufacturing Corp. | Flower-like capacitor structure for a memory cell |
WO1999054895A2 (en) * | 1998-04-20 | 1999-10-28 | Koninklijke Philips Electronics N.V. | Thin-film capacitor |
US6720604B1 (en) * | 1999-01-13 | 2004-04-13 | Agere Systems Inc. | Capacitor for an integrated circuit |
KR100308622B1 (ko) * | 1999-04-12 | 2001-11-01 | 윤종용 | 디램 셀 캐패시터 및 제조 방법 |
US6060755A (en) * | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
DE19950364A1 (de) | 1999-10-19 | 2001-04-26 | Infineon Technologies Ag | Integrierte Schaltungsanordnung mit mindestens einem Kondensator und Verfahren zu deren Herstellung |
DE19950540B4 (de) * | 1999-10-20 | 2005-07-21 | Infineon Technologies Ag | Verfahren zur Herstellung einer Kondensator-Elektrode mit Barrierestruktur |
JP2001250863A (ja) * | 1999-12-27 | 2001-09-14 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
KR100611387B1 (ko) * | 1999-12-30 | 2006-08-11 | 주식회사 하이닉스반도체 | 고용량 반도체메모리장치의 커패시터 제조 방법 |
JP3828332B2 (ja) * | 2000-03-27 | 2006-10-04 | 株式会社東芝 | 強誘電体メモリ |
AU762082B2 (en) * | 2000-05-03 | 2003-06-19 | Raytheon Company | Fixed frequency regulation circuit employing a voltage variable dielectric capacitor |
US6451667B1 (en) * | 2000-12-21 | 2002-09-17 | Infineon Technologies Ag | Self-aligned double-sided vertical MIMcap |
KR100519375B1 (ko) * | 2000-12-21 | 2005-10-07 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 및 제조 방법 |
KR20020066064A (ko) * | 2001-02-08 | 2002-08-14 | 주식회사 하이닉스반도체 | 반도체소자의 컨케이브 커패시터 제조방법 |
US6576479B2 (en) * | 2001-04-23 | 2003-06-10 | Macronix International Co., Ltd. | Method for forming vertical ferroelectric capacitor comprising forming ferroelectric material in gap between electrodes |
US6528838B1 (en) * | 2001-11-13 | 2003-03-04 | Chartered Semiconductors Manufacturing Limited | Damascene MIM capacitor with a curvilinear surface structure |
FR2833783B1 (fr) * | 2001-12-13 | 2004-03-12 | St Microelectronics Sa | Composant d'un circuit integre, pae exemple une cellule de memorisation, protege contre les aleas logiques, et procede de realisation associe |
JP2004014714A (ja) | 2002-06-05 | 2004-01-15 | Mitsubishi Electric Corp | キャパシタの製造方法 |
KR100483013B1 (ko) * | 2002-07-18 | 2005-04-15 | 주식회사 하이닉스반도체 | 반도체소자의 저장전극 및 그 형성방법 |
US7316980B2 (en) * | 2003-10-02 | 2008-01-08 | Infineon Technologies Ag | Method for forming ferrocapacitors and FeRAM devices |
US20050176198A1 (en) * | 2004-02-11 | 2005-08-11 | Kudelka Stephan P. | Method of fabricating bottle trench capacitors using an electrochemical etch with electrochemical etch stop |
JP2005347682A (ja) * | 2004-06-07 | 2005-12-15 | Oki Electric Ind Co Ltd | 強誘電体膜キャパシタの製造方法 |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7489641B2 (en) * | 2005-04-25 | 2009-02-10 | Acterna | Data connection quality analysis apparatus and methods |
JP5459894B2 (ja) * | 2005-12-27 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
EP2104948A2 (de) * | 2007-02-20 | 2009-09-30 | Qualcomm Mems Technologies, Inc. | Ausrüstung und verfahren zur mems-ätzung |
CN101652317B (zh) * | 2007-04-04 | 2012-12-12 | 高通Mems科技公司 | 通过牺牲层中的界面修改来消除释放蚀刻侵蚀 |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
EP2181355A1 (de) | 2007-07-25 | 2010-05-05 | Qualcomm Mems Technologies, Inc. | Mems-anzeigevorrichtungen und herstellungsverfahren dafür |
US8023191B2 (en) * | 2008-05-07 | 2011-09-20 | Qualcomm Mems Technologies, Inc. | Printable static interferometric images |
US10903308B2 (en) * | 2016-07-13 | 2021-01-26 | Samsung Electronics Co., Ltd. | Semiconductor device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276343A (en) * | 1990-04-21 | 1994-01-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a bit line constituted by a semiconductor layer |
US5313089A (en) * | 1992-05-26 | 1994-05-17 | Motorola, Inc. | Capacitor and a memory cell formed therefrom |
US5498889A (en) * | 1993-11-29 | 1996-03-12 | Motorola, Inc. | Semiconductor device having increased capacitance and method for making the same |
JP3197134B2 (ja) * | 1994-01-18 | 2001-08-13 | 株式会社東芝 | 半導体装置 |
KR0147584B1 (ko) * | 1994-03-17 | 1998-08-01 | 윤종용 | 매몰 비트라인 셀의 제조방법 |
US5566045A (en) * | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
US5438011A (en) * | 1995-03-03 | 1995-08-01 | Micron Technology, Inc. | Method of forming a capacitor using a photoresist contact sidewall having standing wave ripples |
EP0740347B1 (de) * | 1995-04-24 | 2002-08-28 | Infineon Technologies AG | Halbleiter-Speichervorrichtung unter Verwendung eines ferroelektrischen Dielektrikums und Verfahren zur Herstellung |
US5633781A (en) * | 1995-12-22 | 1997-05-27 | International Business Machines Corporation | Isolated sidewall capacitor having a compound plate electrode |
-
1997
- 1997-10-22 US US08/955,761 patent/US6033919A/en not_active Expired - Lifetime
- 1997-10-24 KR KR1019970054775A patent/KR100492435B1/ko not_active IP Right Cessation
- 1997-10-27 JP JP9294680A patent/JPH10154801A/ja active Pending
- 1997-10-27 DE DE69739274T patent/DE69739274D1/de not_active Expired - Lifetime
- 1997-10-27 EP EP97308617A patent/EP0838852B1/de not_active Expired - Lifetime
-
1998
- 1998-04-24 TW TW086115905A patent/TW368717B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0838852B1 (de) | 2009-02-25 |
KR19980033144A (ko) | 1998-07-25 |
TW368717B (en) | 1999-09-01 |
JPH10154801A (ja) | 1998-06-09 |
US6033919A (en) | 2000-03-07 |
EP0838852A2 (de) | 1998-04-29 |
EP0838852A3 (de) | 2004-11-10 |
KR100492435B1 (ko) | 2006-04-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |