DE69621723D1 - Verfahren zur Herstellung einer Schicht - Google Patents

Verfahren zur Herstellung einer Schicht

Info

Publication number
DE69621723D1
DE69621723D1 DE69621723T DE69621723T DE69621723D1 DE 69621723 D1 DE69621723 D1 DE 69621723D1 DE 69621723 T DE69621723 T DE 69621723T DE 69621723 T DE69621723 T DE 69621723T DE 69621723 D1 DE69621723 D1 DE 69621723D1
Authority
DE
Germany
Prior art keywords
making
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621723T
Other languages
English (en)
Other versions
DE69621723T2 (de
Inventor
Kazuo Maeda
Noboru Tokumasu
Yoshiaki Yuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Original Assignee
Semiconductor Process Laboratory Co Ltd
Canon Marketing Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Process Laboratory Co Ltd, Canon Marketing Japan Inc filed Critical Semiconductor Process Laboratory Co Ltd
Application granted granted Critical
Publication of DE69621723D1 publication Critical patent/DE69621723D1/de
Publication of DE69621723T2 publication Critical patent/DE69621723T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31629—Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
DE69621723T 1995-08-18 1996-08-09 Verfahren zur Herstellung einer Schicht Expired - Fee Related DE69621723T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7210896A JP3061255B2 (ja) 1995-08-18 1995-08-18 成膜方法

Publications (2)

Publication Number Publication Date
DE69621723D1 true DE69621723D1 (de) 2002-07-18
DE69621723T2 DE69621723T2 (de) 2002-11-28

Family

ID=16596880

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621723T Expired - Fee Related DE69621723T2 (de) 1995-08-18 1996-08-09 Verfahren zur Herstellung einer Schicht

Country Status (5)

Country Link
US (1) US5800877A (de)
EP (1) EP0761841B1 (de)
JP (1) JP3061255B2 (de)
KR (1) KR100262053B1 (de)
DE (1) DE69621723T2 (de)

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JP3178375B2 (ja) * 1997-06-03 2001-06-18 日本電気株式会社 絶縁膜の形成方法
US5908672A (en) * 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
US6337102B1 (en) 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
US6593247B1 (en) * 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6153509A (en) * 1998-07-01 2000-11-28 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US6323101B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6383951B1 (en) * 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
AU2814000A (en) 1999-02-26 2000-09-14 Trikon Holdings Limited A method of processing a polymer layer
JP4515550B2 (ja) * 1999-03-18 2010-08-04 東芝モバイルディスプレイ株式会社 薄膜形成方法
DE10081808T1 (de) 1999-06-26 2002-11-07 Trikon Holdings Ltd Verfahren und Vorrichtung zur Ausbildung eines Filmes auf einem Substrat
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
DE19960092A1 (de) * 1999-12-14 2001-07-12 Bosch Gmbh Robert Beschichtungsverfahren
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
JP3934343B2 (ja) * 2000-07-12 2007-06-20 キヤノンマーケティングジャパン株式会社 半導体装置及びその製造方法
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
KR20020051456A (ko) * 2000-12-22 2002-06-29 황 철 주 저온환경의 화학기상증착 방법
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6732551B2 (en) 2001-05-04 2004-05-11 Corning Incorporated Method and feedstock for making silica
US7074489B2 (en) * 2001-05-23 2006-07-11 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US6716770B2 (en) * 2001-05-23 2004-04-06 Air Products And Chemicals, Inc. Low dielectric constant material and method of processing by CVD
US6486082B1 (en) 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
KR20030001959A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US6936309B2 (en) 2002-04-02 2005-08-30 Applied Materials, Inc. Hardness improvement of silicon carboxy films
US20030194496A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US6815373B2 (en) 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US20030206337A1 (en) * 2002-05-06 2003-11-06 Eastman Kodak Company Exposure apparatus for irradiating a sensitized substrate
US6927178B2 (en) * 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US7105460B2 (en) * 2002-07-11 2006-09-12 Applied Materials Nitrogen-free dielectric anti-reflective coating and hardmask
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
US7425350B2 (en) * 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
WO2007139379A1 (en) * 2006-05-30 2007-12-06 Fujifilm Manufacturing Europe B.V. Method and apparatus for deposition using pulsed atmospheric pressure glow discharge
US8338307B2 (en) * 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
JP5084343B2 (ja) * 2007-05-07 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2009096785A1 (en) * 2008-02-01 2009-08-06 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
CN101661962B (zh) * 2008-08-29 2012-05-09 苏州中来光伏新材股份有限公司 一种具有高粘结性的太阳能电池背膜及加工工艺
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
JP5890709B2 (ja) * 2011-06-30 2016-03-22 株式会社東芝 テンプレート用基板及びその製造方法

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Also Published As

Publication number Publication date
JP3061255B2 (ja) 2000-07-10
JPH0964029A (ja) 1997-03-07
EP0761841B1 (de) 2002-06-12
KR970013003A (ko) 1997-03-29
US5800877A (en) 1998-09-01
KR100262053B1 (ko) 2000-07-15
DE69621723T2 (de) 2002-11-28
EP0761841A1 (de) 1997-03-12

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee