DE69509594D1 - Verfahren zur Herstellung einer Diamantschicht - Google Patents

Verfahren zur Herstellung einer Diamantschicht

Info

Publication number
DE69509594D1
DE69509594D1 DE69509594T DE69509594T DE69509594D1 DE 69509594 D1 DE69509594 D1 DE 69509594D1 DE 69509594 T DE69509594 T DE 69509594T DE 69509594 T DE69509594 T DE 69509594T DE 69509594 D1 DE69509594 D1 DE 69509594D1
Authority
DE
Germany
Prior art keywords
production
diamond layer
diamond
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69509594T
Other languages
English (en)
Other versions
DE69509594T2 (de
Inventor
Keiji Hirabayashi
Toshiaki Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69509594D1 publication Critical patent/DE69509594D1/de
Application granted granted Critical
Publication of DE69509594T2 publication Critical patent/DE69509594T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
DE69509594T 1994-07-18 1995-07-17 Verfahren zur Herstellung einer Diamantschicht Expired - Fee Related DE69509594T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6165182A JPH0827576A (ja) 1994-07-18 1994-07-18 ダイヤモンド膜の形成方法

Publications (2)

Publication Number Publication Date
DE69509594D1 true DE69509594D1 (de) 1999-06-17
DE69509594T2 DE69509594T2 (de) 2000-01-20

Family

ID=15807409

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69509594T Expired - Fee Related DE69509594T2 (de) 1994-07-18 1995-07-17 Verfahren zur Herstellung einer Diamantschicht

Country Status (6)

Country Link
US (1) US5720808A (de)
EP (1) EP0693575B1 (de)
JP (1) JPH0827576A (de)
KR (1) KR0184649B1 (de)
CN (1) CN1058534C (de)
DE (1) DE69509594T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253115B1 (ko) * 1997-03-05 2000-05-01 윤덕용 N-형 반도체 다이아몬드의 제조방법
US6077572A (en) * 1997-06-18 2000-06-20 Northeastern University Method of coating edges with diamond-like carbon
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
US6423384B1 (en) * 1999-06-25 2002-07-23 Applied Materials, Inc. HDP-CVD deposition of low dielectric constant amorphous carbon film
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6541397B1 (en) * 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
EP1748091A4 (de) * 2004-04-19 2012-11-28 Nat Inst Of Advanced Ind Scien Kohlenstofffilm
JP2008019477A (ja) * 2006-07-13 2008-01-31 Canon Inc 真空蒸着装置
CN101200802B (zh) * 2006-12-13 2010-05-12 上海坤孚企业(集团)有限公司 发动机内壁陶瓷化处理方法
US20080254233A1 (en) * 2007-04-10 2008-10-16 Kwangduk Douglas Lee Plasma-induced charge damage control for plasma enhanced chemical vapor deposition processes
US20120276743A1 (en) * 2011-04-26 2012-11-01 Jai-Hyung Won Methods of forming a carbon type hard mask layer using induced coupled plasma and methods of forming patterns using the same
KR101320620B1 (ko) * 2012-04-10 2013-10-23 한국과학기술연구원 다이아몬드 합성을 위한 화학기상증착 장치 및 이를 이용한 다이아몬드 합성 방법
JP5842761B2 (ja) * 2012-08-07 2016-01-13 信越化学工業株式会社 ダイヤモンドの製造方法及び直流プラズマｃｖｄ装置
CN105839071B (zh) * 2016-04-19 2018-01-02 中国科学院大学 双频电感耦合射频等离子体喷射沉积金刚石的方法
CN107164740B (zh) * 2017-05-12 2019-05-07 中国工程物理研究院应用电子学研究所 一种采用微波等离子体化学气相沉积法制备金刚石膜的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0678851B2 (ja) * 1988-04-01 1994-10-05 三洋電機株式会社 冷凍装置
EP0371145B1 (de) * 1988-05-28 1994-02-16 Sumitomo Electric Industries, Ltd. Verfahren zur herstellung von diamant aus der dampfphase
US4898748A (en) * 1988-08-31 1990-02-06 The Board Of Trustees Of Leland Stanford Junior University Method for enhancing chemical reactivity in thermal plasma processes
US5087434A (en) * 1989-04-21 1992-02-11 The Pennsylvania Research Corporation Synthesis of diamond powders in the gas phase
GB2240113A (en) * 1990-01-02 1991-07-24 Shell Int Research Preparation of adsorbent carbonaceous layers
JPH0742197B2 (ja) * 1991-07-30 1995-05-10 科学技術庁無機材質研究所長 プラズマを用いるダイヤモンドの合成法
US5349154A (en) * 1991-10-16 1994-09-20 Rockwell International Corporation Diamond growth by microwave generated plasma flame
CA2077773A1 (en) * 1991-10-25 1993-04-26 Thomas R. Anthony Microwave, rf, or ac/dc discharge assisted flame deposition of cvd diamond
AU2912292A (en) * 1991-11-05 1993-06-07 Research Triangle Institute Chemical vapor deposition of diamond films using water-based plasma discharges

Also Published As

Publication number Publication date
EP0693575A1 (de) 1996-01-24
EP0693575B1 (de) 1999-05-12
KR0184649B1 (ko) 1999-04-15
CN1121963A (zh) 1996-05-08
JPH0827576A (ja) 1996-01-30
US5720808A (en) 1998-02-24
CN1058534C (zh) 2000-11-15
DE69509594T2 (de) 2000-01-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee