ATE458273T1 - Verfahren zur ätzung eines substrats - Google Patents

Verfahren zur ätzung eines substrats

Info

Publication number
ATE458273T1
ATE458273T1 AT99954133T AT99954133T ATE458273T1 AT E458273 T1 ATE458273 T1 AT E458273T1 AT 99954133 T AT99954133 T AT 99954133T AT 99954133 T AT99954133 T AT 99954133T AT E458273 T1 ATE458273 T1 AT E458273T1
Authority
AT
Austria
Prior art keywords
substrate
etching
frequency
pulsed
depositing
Prior art date
Application number
AT99954133T
Other languages
English (en)
Inventor
Jyoti Bhardwaj
Huma Ashraf
Janet Hopkins
Leslie Lea
Alan Hynes
Ian Johnston
Original Assignee
Surface Technology Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9824077.3A external-priority patent/GB9824077D0/en
Priority claimed from GBGB9901867.3A external-priority patent/GB9901867D0/en
Priority claimed from GBGB9912376.2A external-priority patent/GB9912376D0/en
Application filed by Surface Technology Systems Plc filed Critical Surface Technology Systems Plc
Application granted granted Critical
Publication of ATE458273T1 publication Critical patent/ATE458273T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT99954133T 1998-11-04 1999-11-03 Verfahren zur ätzung eines substrats ATE458273T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB9824077.3A GB9824077D0 (en) 1998-11-04 1998-11-04 A method and apparatus for etching a substrate
GBGB9901867.3A GB9901867D0 (en) 1999-01-29 1999-01-29 A method and apparatus
GBGB9912376.2A GB9912376D0 (en) 1999-05-28 1999-05-28 A method and apparatus for etching a substrate
PCT/GB1999/003630 WO2000026956A1 (en) 1998-11-04 1999-11-03 A method and apparatus for etching a substrate

Publications (1)

Publication Number Publication Date
ATE458273T1 true ATE458273T1 (de) 2010-03-15

Family

ID=27269536

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99954133T ATE458273T1 (de) 1998-11-04 1999-11-03 Verfahren zur ätzung eines substrats

Country Status (6)

Country Link
EP (1) EP1131847B1 (de)
JP (2) JP4163857B2 (de)
KR (1) KR100514150B1 (de)
AT (1) ATE458273T1 (de)
DE (1) DE69942034D1 (de)
WO (1) WO2000026956A1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002025714A1 (en) * 2000-09-20 2002-03-28 Infineon Technologies Sc300 Gmbh & Co. Kg A process for dry-etching a semiconductor wafer surface
US6562190B1 (en) * 2000-10-06 2003-05-13 Lam Research Corporation System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US6902867B2 (en) 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
TWI249767B (en) * 2004-02-17 2006-02-21 Sanyo Electric Co Method for making a semiconductor device
JP2008504975A (ja) * 2004-06-29 2008-02-21 ウナクシス ユーエスエイ、インコーポレイテッド 時分割多重化エッチング処理時にアスペクト比に依存するエッチングを低減する方法と装置
JP2007019758A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 薄膜圧電共振素子の製造方法及び薄膜圧電共振素子
JP4593402B2 (ja) * 2005-08-25 2010-12-08 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置
WO2007031778A1 (en) * 2005-09-16 2007-03-22 Aviza Technology Limited A method of etching a feature in a silicone substrate
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP5491648B2 (ja) * 2006-10-06 2014-05-14 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法
US7718538B2 (en) * 2007-02-21 2010-05-18 Applied Materials, Inc. Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
JP4660498B2 (ja) 2007-03-27 2011-03-30 株式会社東芝 基板のプラズマ処理装置
US7629255B2 (en) * 2007-06-04 2009-12-08 Lam Research Corporation Method for reducing microloading in etching high aspect ratio structures
JP4607930B2 (ja) 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US7846846B2 (en) * 2007-09-25 2010-12-07 Applied Materials, Inc. Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls
JP5308080B2 (ja) 2008-06-18 2013-10-09 Ｓｐｐテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
JP5295833B2 (ja) * 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5288555B2 (ja) * 2009-05-27 2013-09-11 サムコ株式会社 誘導結合プラズマ処理装置及びプラズマエッチング方法
CN102484066B (zh) * 2010-01-26 2014-11-19 株式会社爱发科 干式蚀刻法
JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
JP5223878B2 (ja) * 2010-03-30 2013-06-26 株式会社デンソー 半導体装置の製造方法
JP5542509B2 (ja) * 2010-04-05 2014-07-09 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
US8133349B1 (en) * 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP6047281B2 (ja) * 2011-10-27 2016-12-21 神港精機株式会社 プラズマエッチング方法
CN104067375B (zh) * 2012-02-01 2016-05-11 东京毅力科创株式会社 等离子体蚀刻方法和等离子体蚀刻装置
KR102034556B1 (ko) * 2012-02-09 2019-10-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
GB2499816A (en) 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
US20140263182A1 (en) * 2013-03-15 2014-09-18 Tokyo Electron Limited Dc pulse etcher
JP6173086B2 (ja) * 2013-07-19 2017-08-02 キヤノン株式会社 シリコン基板のエッチング方法
JP5918886B2 (ja) * 2015-07-01 2016-05-18 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6697372B2 (ja) 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
KR102691504B1 (ko) * 2018-06-19 2024-08-01 어플라이드 머티어리얼스, 인코포레이티드 펄스형 플라즈마 증착 에칭 스텝 커버리지 개선
JP7536625B2 (ja) * 2020-12-04 2024-08-20 株式会社東芝 半導体装置およびその製造方法
GB202020822D0 (en) 2020-12-31 2021-02-17 Spts Technologies Ltd Method and apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
JP3799073B2 (ja) * 1994-11-04 2006-07-19 株式会社日立製作所 ドライエッチング方法
EP1357584A3 (de) * 1996-08-01 2005-01-12 Surface Technology Systems Plc Verfahren zur Oberflachensbehandlung von halbleitenden Substraten
JP3550466B2 (ja) * 1996-08-30 2004-08-04 株式会社日立製作所 プラズマ処理方法

Also Published As

Publication number Publication date
JP4163857B2 (ja) 2008-10-08
JP2006148156A (ja) 2006-06-08
DE69942034D1 (de) 2010-04-01
KR20010080937A (ko) 2001-08-25
EP1131847B1 (de) 2010-02-17
EP1131847A1 (de) 2001-09-12
WO2000026956A1 (en) 2000-05-11
JP2002529913A (ja) 2002-09-10
KR100514150B1 (ko) 2005-09-13

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