NO944384L - Fremgangsmåte for å gjöre mikrostrukturer plane - Google Patents

Fremgangsmåte for å gjöre mikrostrukturer plane

Info

Publication number
NO944384L
NO944384L NO944384A NO944384A NO944384L NO 944384 L NO944384 L NO 944384L NO 944384 A NO944384 A NO 944384A NO 944384 A NO944384 A NO 944384A NO 944384 L NO944384 L NO 944384L
Authority
NO
Norway
Prior art keywords
plane
procedure
making microstructures
making
microstructure
Prior art date
Application number
NO944384A
Other languages
English (en)
Other versions
NO944384D0 (no
Inventor
Peter B Mumola
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NO944384D0 publication Critical patent/NO944384D0/no
Publication of NO944384L publication Critical patent/NO944384L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Fremgangsmåte for å gjøre en mikrostruktur (16) plan omfattende tilveiebringelse av et materlallag (18) over miktrostrukturen (16) slik at det dannes en overbelegg- overflate (20), måling av tykkelsen på laget (18) over overflaten (20) under dannelse av et kart av oppholds- tid i forhold til posisjon, og fjerning av materiale fra materlallaget (18) ved bruk av et plasmaassistert kjemisk etseverktøy i overensstemmelse med kartet for oppholdstid l forhold til posisjon.
NO944384A 1993-11-17 1994-11-16 Fremgangsmåte for å gjöre mikrostrukturer plane NO944384L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/153,681 US5419803A (en) 1993-11-17 1993-11-17 Method of planarizing microstructures

Publications (2)

Publication Number Publication Date
NO944384D0 NO944384D0 (no) 1994-11-16
NO944384L true NO944384L (no) 1995-05-18

Family

ID=22548270

Family Applications (1)

Application Number Title Priority Date Filing Date
NO944384A NO944384L (no) 1993-11-17 1994-11-16 Fremgangsmåte for å gjöre mikrostrukturer plane

Country Status (6)

Country Link
US (1) US5419803A (no)
EP (1) EP0654816A3 (no)
JP (1) JPH07221082A (no)
IL (1) IL111540A (no)
NO (1) NO944384L (no)
TW (1) TW308711B (no)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665199A (en) * 1995-06-23 1997-09-09 Advanced Micro Devices, Inc. Methodology for developing product-specific interlayer dielectric polish processes
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
US6074947A (en) * 1998-07-10 2000-06-13 Plasma Sil, Llc Process for improving uniform thickness of semiconductor substrates using plasma assisted chemical etching
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US20080190558A1 (en) * 2002-04-26 2008-08-14 Accretech Usa, Inc. Wafer processing apparatus and method
US20080017316A1 (en) * 2002-04-26 2008-01-24 Accretech Usa, Inc. Clean ignition system for wafer substrate processing
US20080011332A1 (en) * 2002-04-26 2008-01-17 Accretech Usa, Inc. Method and apparatus for cleaning a wafer substrate
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US7297892B2 (en) * 2003-08-14 2007-11-20 Rapt Industries, Inc. Systems and methods for laser-assisted plasma processing
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
KR100737379B1 (ko) * 2005-12-06 2007-07-09 한국전자통신연구원 반도체 기판의 평탄화 방법
DE102017216358A1 (de) 2017-09-14 2019-03-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Bestimmung eines Polarisationszustandes einer elektromagnetischen Welle

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108264A (en) * 1980-01-31 1981-08-27 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS62120029A (ja) * 1985-11-20 1987-06-01 Sumitomo Electric Ind Ltd エツチバツク平坦化方法
FR2599892B1 (fr) * 1986-06-10 1988-08-26 Schiltz Andre Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique
JPH0834198B2 (ja) * 1990-11-28 1996-03-29 信越半導体株式会社 Ｓｏｉ基板における単結晶薄膜層の膜厚制御方法
JPH0645327A (ja) * 1991-01-09 1994-02-18 Nec Corp 半導体装置の製造方法
US5254830A (en) * 1991-05-07 1993-10-19 Hughes Aircraft Company System for removing material from semiconductor wafers using a contained plasma
US5240552A (en) * 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5291415A (en) * 1991-12-13 1994-03-01 Hughes Aircraft Company Method to determine tool paths for thinning and correcting errors in thickness profiles of films
KR940008372B1 (ko) * 1992-01-16 1994-09-12 삼성전자 주식회사 반도체 기판의 층간 절연막의 평탄화 방법
US5375064A (en) * 1993-12-02 1994-12-20 Hughes Aircraft Company Method and apparatus for moving a material removal tool with low tool accelerations

Also Published As

Publication number Publication date
NO944384D0 (no) 1994-11-16
EP0654816A3 (en) 1995-11-29
JPH07221082A (ja) 1995-08-18
IL111540A (en) 1996-10-31
TW308711B (no) 1997-06-21
IL111540A0 (en) 1995-01-24
EP0654816A2 (en) 1995-05-24
US5419803A (en) 1995-05-30

Similar Documents

Publication Publication Date Title
NO944384L (no) Fremgangsmåte for å gjöre mikrostrukturer plane
US5022961B1 (en) Method for removing a film on a silicon layer surface
AU6180690A (en) Method of preparing silicon carbide surfaces for crystal growth
JPS5562733A (en) Method of forming narrow region on silicon substrate
DE69934986D1 (de) Verfahren für anisotropes ätzen
GB2272571B (en) Microstructure fabrication
ATE458273T1 (de) Verfahren zur ätzung eines substrats
DE3669016D1 (de) Verfahren zur herstellung koplanarer viellagen-metall-isolator-schichten auf einem substrat.
DE69409005D1 (de) Verfahren zum abdichten poröser substrate
MY115808A (en) Method of forming connection hole
ATE88021T1 (de) Fluessigkristallwiedergabeanordnung und verfahren zum herstellen einer derartigen wiedergabeanordnung.
TW341715B (en) Methods of analyzing wafer defects
DE68919561D1 (de) Verfahren zur Oberflächenpassivierung eines zusammengesetzten Halbleiters.
NO853211L (no) Fremgangsmaate og anordning for trykkmetning av substrat.
DE69329369D1 (de) Verfahren zum Ätzen eines Silizium-Substrats
ATE71476T1 (de) Verfahren zur herstellung und einstellung von eingegrabenen schichten.
JPS5748237A (en) Manufacture of 2n doubling pattern
DE3064426D1 (en) A method of applying a layer in accordance with a pattern on a substrate
SE9700773L (sv) Halvledarkomponent och tillverkningsförfarande förhalvledarkomponent
EP0149408A3 (en) Method and apparatus for the deposition of a thin layer on a substrate by a reactive plasma
TW370693B (en) Method for forming a contact to a substrate
EP0179403A3 (en) Apparatus for producing thin-film photoelectric transducer
GB8819752D0 (en) Apparatus &amp; method for depositing surface layers on substrates
JPS5683028A (en) Manufacture of semiconductor device
JPS5773940A (en) Levelling method of insulation layer