FR2599892B1 - Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique - Google Patents

Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique

Info

Publication number
FR2599892B1
FR2599892B1 FR8608362A FR8608362A FR2599892B1 FR 2599892 B1 FR2599892 B1 FR 2599892B1 FR 8608362 A FR8608362 A FR 8608362A FR 8608362 A FR8608362 A FR 8608362A FR 2599892 B1 FR2599892 B1 FR 2599892B1
Authority
FR
France
Prior art keywords
surfacing
dielectric layer
semiconductor substrate
substrate coated
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8608362A
Other languages
English (en)
Other versions
FR2599892A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8608362A priority Critical patent/FR2599892B1/fr
Publication of FR2599892A1 publication Critical patent/FR2599892A1/fr
Application granted granted Critical
Publication of FR2599892B1 publication Critical patent/FR2599892B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
FR8608362A 1986-06-10 1986-06-10 Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique Expired FR2599892B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8608362A FR2599892B1 (fr) 1986-06-10 1986-06-10 Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8608362A FR2599892B1 (fr) 1986-06-10 1986-06-10 Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique

Publications (2)

Publication Number Publication Date
FR2599892A1 FR2599892A1 (fr) 1987-12-11
FR2599892B1 true FR2599892B1 (fr) 1988-08-26

Family

ID=9336185

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8608362A Expired FR2599892B1 (fr) 1986-06-10 1986-06-10 Procede d'aplanissement d'un substrat semiconducteur revetu d'une couche dielectrique

Country Status (1)

Country Link
FR (1) FR2599892B1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8701717A (nl) * 1987-07-21 1989-02-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een geplanariseerde opbouw.
FR2627902B1 (fr) * 1988-02-26 1990-06-22 Philips Nv Procede pour aplanir la surface d'un dispositif semiconducteur
US4836885A (en) * 1988-05-03 1989-06-06 International Business Machines Corporation Planarization process for wide trench isolation
DE69004932T2 (de) * 1989-10-25 1994-05-19 Ibm Verfahren zur Herstellung breiter mit Dielektrikum gefüllter Isolationsgraben für Halbleiteranordnungen.
US5173439A (en) * 1989-10-25 1992-12-22 International Business Machines Corporation Forming wide dielectric-filled isolation trenches in semi-conductors
US5419803A (en) * 1993-11-17 1995-05-30 Hughes Aircraft Company Method of planarizing microstructures
DE19538005A1 (de) 1995-10-12 1997-04-17 Fraunhofer Ges Forschung Verfahren zum Erzeugen einer Grabenisolation in einem Substrat
US6284560B1 (en) * 1998-12-18 2001-09-04 Eastman Kodak Company Method for producing co-planar surface structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4457820A (en) * 1981-12-24 1984-07-03 International Business Machines Corporation Two step plasma etching
FR2529714A1 (fr) * 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
JPS618946A (ja) * 1984-06-25 1986-01-16 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2599892A1 (fr) 1987-12-11

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Date Code Title Description
TP Transmission of property
ST Notification of lapse