ATE418157T1 - Kerbenfreies ätzen von soi-strukturen mit hohem seitenverhältnis durch verwendung eines zeitlich gemultiplexten prozesses und hf-vormodulation - Google Patents
Kerbenfreies ätzen von soi-strukturen mit hohem seitenverhältnis durch verwendung eines zeitlich gemultiplexten prozesses und hf-vormodulationInfo
- Publication number
- ATE418157T1 ATE418157T1 AT04817803T AT04817803T ATE418157T1 AT E418157 T1 ATE418157 T1 AT E418157T1 AT 04817803 T AT04817803 T AT 04817803T AT 04817803 T AT04817803 T AT 04817803T AT E418157 T1 ATE418157 T1 AT E418157T1
- Authority
- AT
- Austria
- Prior art keywords
- modulation
- notch
- aspect ratio
- high aspect
- soi structures
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000005530 etching Methods 0.000 title 1
- 230000008021 deposition Effects 0.000 abstract 2
- 238000001020 plasma etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Peptides Or Proteins (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US51293303P | 2003-10-21 | 2003-10-21 | |
US10/968,823 US20050112891A1 (en) | 2003-10-21 | 2004-10-18 | Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE418157T1 true ATE418157T1 (de) | 2009-01-15 |
Family
ID=34576731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04817803T ATE418157T1 (de) | 2003-10-21 | 2004-10-19 | Kerbenfreies ätzen von soi-strukturen mit hohem seitenverhältnis durch verwendung eines zeitlich gemultiplexten prozesses und hf-vormodulation |
Country Status (6)
Country | Link |
---|---|
US (2) | US20050112891A1 (de) |
EP (1) | EP1676302B1 (de) |
JP (1) | JP2007509506A (de) |
AT (1) | ATE418157T1 (de) |
DE (1) | DE602004018531D1 (de) |
WO (1) | WO2005045904A2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006012297A1 (en) * | 2004-06-29 | 2006-02-02 | Unaxis Usa Inc. | Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes |
US7749400B2 (en) * | 2005-12-16 | 2010-07-06 | Jason Plumhoff | Method for etching photolithographic substrates |
US7351664B2 (en) * | 2006-05-30 | 2008-04-01 | Lam Research Corporation | Methods for minimizing mask undercuts and notches for plasma processing system |
JP5082338B2 (ja) * | 2006-08-25 | 2012-11-28 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
US7682986B2 (en) * | 2007-02-05 | 2010-03-23 | Lam Research Corporation | Ultra-high aspect ratio dielectric etch |
US7547636B2 (en) * | 2007-02-05 | 2009-06-16 | Lam Research Corporation | Pulsed ultra-high aspect ratio dielectric etch |
US7737042B2 (en) * | 2007-02-22 | 2010-06-15 | Applied Materials, Inc. | Pulsed-plasma system for etching semiconductor structures |
US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US7771606B2 (en) * | 2007-02-22 | 2010-08-10 | Applied Materials, Inc. | Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures |
JP5608157B2 (ja) * | 2008-03-21 | 2014-10-15 | アプライド マテリアルズ インコーポレイテッド | 基板エッチングシステム及びプロセスの方法及び装置 |
JP2010118549A (ja) * | 2008-11-13 | 2010-05-27 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
JP2011100760A (ja) * | 2009-11-04 | 2011-05-19 | Ulvac Japan Ltd | エッチング方法 |
US8658541B2 (en) * | 2010-01-15 | 2014-02-25 | Applied Materials, Inc. | Method of controlling trench microloading using plasma pulsing |
US9373521B2 (en) | 2010-02-24 | 2016-06-21 | Tokyo Electron Limited | Etching processing method |
US8802545B2 (en) * | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US9105705B2 (en) * | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
JP5718124B2 (ja) * | 2011-03-30 | 2015-05-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
US8758638B2 (en) * | 2011-05-10 | 2014-06-24 | Applied Materials, Inc. | Copper oxide removal techniques |
US8609548B2 (en) * | 2011-06-06 | 2013-12-17 | Lam Research Corporation | Method for providing high etch rate |
US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US8883028B2 (en) * | 2011-12-28 | 2014-11-11 | Lam Research Corporation | Mixed mode pulsing etching in plasma processing systems |
GB2499816A (en) * | 2012-02-29 | 2013-09-04 | Oxford Instr Nanotechnology Tools Ltd | Controlling deposition and etching in a chamber with fine time control of parameters and gas flow |
JP5841917B2 (ja) | 2012-08-24 | 2016-01-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
JP5967710B2 (ja) * | 2012-09-28 | 2016-08-10 | サムコ株式会社 | プラズマエッチングの終点検出方法 |
CN103928283B (zh) * | 2013-01-10 | 2016-06-15 | 中微半导体设备(上海)有限公司 | 一种真空处理腔室的射频脉冲功率匹配的方法及其装置 |
US9653316B2 (en) * | 2013-02-18 | 2017-05-16 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
JP6173086B2 (ja) * | 2013-07-19 | 2017-08-02 | キヤノン株式会社 | シリコン基板のエッチング方法 |
US20150371889A1 (en) * | 2014-06-20 | 2015-12-24 | Applied Materials, Inc. | Methods for shallow trench isolation formation in a silicon germanium layer |
US9691625B2 (en) * | 2015-11-04 | 2017-06-27 | Lam Research Corporation | Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level |
US10090162B2 (en) | 2016-01-18 | 2018-10-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing device |
US11295937B2 (en) * | 2019-09-17 | 2022-04-05 | Tokyo Electron Limited | Broadband plasma processing systems and methods |
US11170981B2 (en) * | 2019-09-17 | 2021-11-09 | Tokyo Electron Limited | Broadband plasma processing systems and methods |
RU2715412C1 (ru) * | 2019-11-26 | 2020-02-28 | Акционерное общество «Российская корпорация ракетно-космического приборостроения и информационных систем» (АО «Российские космические системы») | Многослойная коммутационная плата СВЧ-гибридной интегральной микросхемы космического назначения и способ её получения (варианты) |
US20230187174A1 (en) * | 2020-09-02 | 2023-06-15 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
US11917806B2 (en) | 2021-08-12 | 2024-02-27 | Changxin Memory Technologies, Inc. | Method of manufacturing semiconductor structure and semiconductor structure |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6050923A (ja) * | 1983-08-31 | 1985-03-22 | Hitachi Ltd | プラズマ表面処理方法 |
KR890004881B1 (ko) * | 1983-10-19 | 1989-11-30 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마 처리 방법 및 그 장치 |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
JP2918892B2 (ja) * | 1988-10-14 | 1999-07-12 | 株式会社日立製作所 | プラズマエッチング処理方法 |
DE4241045C1 (de) * | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
JP3119172B2 (ja) * | 1995-09-13 | 2000-12-18 | 日新電機株式会社 | プラズマcvd法及び装置 |
US5983828A (en) * | 1995-10-13 | 1999-11-16 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US6253704B1 (en) * | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
JP3220383B2 (ja) * | 1996-07-23 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
ATE251341T1 (de) * | 1996-08-01 | 2003-10-15 | Surface Technology Systems Plc | Verfahren zur ätzung von substraten |
US6214162B1 (en) * | 1996-09-27 | 2001-04-10 | Tokyo Electron Limited | Plasma processing apparatus |
JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH10150025A (ja) * | 1996-11-20 | 1998-06-02 | Mitsubishi Electric Corp | プラズマ反応装置 |
US6187685B1 (en) * | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
US6071822A (en) * | 1998-06-08 | 2000-06-06 | Plasma-Therm, Inc. | Etching process for producing substantially undercut free silicon on insulator structures |
US6126778A (en) * | 1998-07-22 | 2000-10-03 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
JP2000077388A (ja) * | 1998-08-28 | 2000-03-14 | Hitachi Ltd | ドライエッチング方法及びドライエッチング装置 |
JP4163857B2 (ja) * | 1998-11-04 | 2008-10-08 | サーフィス テクノロジー システムズ ピーエルシー | 基板をエッチングするための方法と装置 |
DE19919832A1 (de) * | 1999-04-30 | 2000-11-09 | Bosch Gmbh Robert | Verfahren zum anisotropen Plasmaätzen von Halbleitern |
US6562190B1 (en) * | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
-
2004
- 2004-10-18 US US10/968,823 patent/US20050112891A1/en not_active Abandoned
- 2004-10-19 JP JP2006536773A patent/JP2007509506A/ja active Pending
- 2004-10-19 WO PCT/US2004/034803 patent/WO2005045904A2/en active Application Filing
- 2004-10-19 EP EP04817803A patent/EP1676302B1/de active Active
- 2004-10-19 AT AT04817803T patent/ATE418157T1/de not_active IP Right Cessation
- 2004-10-19 DE DE602004018531T patent/DE602004018531D1/de active Active
-
2007
- 2007-04-16 US US11/681,004 patent/US20070175856A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20070175856A1 (en) | 2007-08-02 |
US20050112891A1 (en) | 2005-05-26 |
WO2005045904A3 (en) | 2005-09-09 |
EP1676302B1 (de) | 2008-12-17 |
WO2005045904A2 (en) | 2005-05-19 |
EP1676302A2 (de) | 2006-07-05 |
DE602004018531D1 (de) | 2009-01-29 |
JP2007509506A (ja) | 2007-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |