ATE251341T1 - Verfahren zur ätzung von substraten - Google Patents

Verfahren zur ätzung von substraten

Info

Publication number
ATE251341T1
ATE251341T1 AT97305642T AT97305642T ATE251341T1 AT E251341 T1 ATE251341 T1 AT E251341T1 AT 97305642 T AT97305642 T AT 97305642T AT 97305642 T AT97305642 T AT 97305642T AT E251341 T1 ATE251341 T1 AT E251341T1
Authority
AT
Austria
Prior art keywords
etching
etching substrates
trench
depositing
deposition
Prior art date
Application number
AT97305642T
Other languages
English (en)
Inventor
Jyoti Kiron Bhardwaj
Huma Ashraf
Babak Khamsehpour
Janet Hopkins
Alan Michael Hynes
Martin Edward Ryan
David Mark Haynes
Original Assignee
Surface Technology Systems Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9616223.5A external-priority patent/GB9616223D0/en
Priority claimed from GBGB9616224.3A external-priority patent/GB9616224D0/en
Application filed by Surface Technology Systems Plc filed Critical Surface Technology Systems Plc
Application granted granted Critical
Publication of ATE251341T1 publication Critical patent/ATE251341T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • H01L21/30655Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
AT97305642T 1996-08-01 1997-07-28 Verfahren zur ätzung von substraten ATE251341T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9616223.5A GB9616223D0 (en) 1996-08-01 1996-08-01 Method of surface treatment of semiconductor substrates
GBGB9616224.3A GB9616224D0 (en) 1996-08-01 1996-08-01 Method of surface treatment of semiconductor substrates

Publications (1)

Publication Number Publication Date
ATE251341T1 true ATE251341T1 (de) 2003-10-15

Family

ID=26309796

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97305642T ATE251341T1 (de) 1996-08-01 1997-07-28 Verfahren zur ätzung von substraten

Country Status (5)

Country Link
US (1) US6051503A (de)
EP (2) EP1357584A3 (de)
JP (2) JP3540129B2 (de)
AT (1) ATE251341T1 (de)
DE (1) DE69725245T2 (de)

Families Citing this family (228)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969635B2 (en) 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
GB9616225D0 (en) * 1996-08-01 1996-09-11 Surface Tech Sys Ltd Method of surface treatment of semiconductor substrates
US6749717B1 (en) * 1997-02-04 2004-06-15 Micron Technology, Inc. Device for in-situ cleaning of an inductively-coupled plasma chambers
DE19736370C2 (de) * 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
WO1999046810A1 (fr) * 1998-03-12 1999-09-16 Hitachi, Ltd. Procede permettant de traiter la surface d'un echantillon
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
EP1131847B1 (de) * 1998-11-04 2010-02-17 Surface Technology Systems Plc Verfahren zur ätzung eines substrats
KR100829288B1 (ko) * 1998-12-11 2008-05-13 서페이스 테크놀로지 시스템스 피엘씨 플라즈마 처리장치
US6417013B1 (en) 1999-01-29 2002-07-09 Plasma-Therm, Inc. Morphed processing of semiconductor devices
GB2348399A (en) * 1999-03-31 2000-10-04 Univ Glasgow Reactive ion etching with control of etch gas flow rate, pressure and rf power
US6383938B2 (en) * 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
DE19927806A1 (de) 1999-06-18 2001-01-04 Bosch Gmbh Robert Vorrichtung und Verfahren zum Hochratenätzen eines Substrates mit einer Plasmaätzanlage und Vorrichtung und Verfahren zum Zünden eines Plasmas und Hochregeln oder Pulsen der Plasmaleistung
DE19930188A1 (de) * 1999-06-30 2001-01-04 Infineon Technologies Ag Verfahren zur Herstellung von Gräben für Speicherkondensatoren von DRAM-Halbleiterspeichern
US20030015496A1 (en) * 1999-07-22 2003-01-23 Sujit Sharan Plasma etching process
GB9917305D0 (en) * 1999-07-23 1999-09-22 Surface Tech Sys Ltd Method and apparatus for anisotropic etching
EP1077475A3 (de) * 1999-08-11 2003-04-02 Applied Materials, Inc. Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US6960305B2 (en) 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6942811B2 (en) 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6890863B1 (en) * 2000-04-27 2005-05-10 Micron Technology, Inc. Etchant and method of use
JP3525862B2 (ja) * 2000-05-22 2004-05-10 トヨタ自動車株式会社 センサ素子及びセンサ装置
US7019376B2 (en) 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
WO2002015960A2 (en) * 2000-08-21 2002-02-28 The Cleveland Clinic Foundation Microneedle array module and method of fabricating the same
US6784108B1 (en) * 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6743732B1 (en) * 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
US6451673B1 (en) * 2001-02-15 2002-09-17 Advanced Micro Devices, Inc. Carrier gas modification for preservation of mask layer during plasma etching
US20020139771A1 (en) * 2001-02-22 2002-10-03 Ping Jiang Gas switching during an etch process to modulate the characteristics of the etch
US20020139477A1 (en) 2001-03-30 2002-10-03 Lam Research Corporation Plasma processing method and apparatus with control of plasma excitation power
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
US20020158046A1 (en) * 2001-04-27 2002-10-31 Chi Wu Formation of an optical component
US6635556B1 (en) * 2001-05-17 2003-10-21 Matrix Semiconductor, Inc. Method of preventing autodoping
WO2002095800A2 (en) * 2001-05-22 2002-11-28 Reflectivity, Inc. A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
US6555166B2 (en) * 2001-06-29 2003-04-29 International Business Machines Method for reducing the microloading effect in a chemical vapor deposition reactor
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6555480B2 (en) 2001-07-31 2003-04-29 Hewlett-Packard Development Company, L.P. Substrate with fluidic channel and method of manufacturing
US6890859B1 (en) * 2001-08-10 2005-05-10 Cypress Semiconductor Corporation Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
JP4209774B2 (ja) * 2001-09-28 2009-01-14 住友精密工業株式会社 シリコン基板のエッチング方法およびエッチング装置
US7115516B2 (en) * 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6906845B2 (en) * 2001-11-26 2005-06-14 Samsung Electronics Co., Ltd. Micro-mechanical device having anti-stiction layer and method of manufacturing the device
FR2834382B1 (fr) * 2002-01-03 2005-03-18 Cit Alcatel Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US7027200B2 (en) 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US6979652B2 (en) * 2002-04-08 2005-12-27 Applied Materials, Inc. Etching multi-shaped openings in silicon
US6818562B2 (en) 2002-04-19 2004-11-16 Applied Materials Inc Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
US6849554B2 (en) 2002-05-01 2005-02-01 Applied Materials, Inc. Method of etching a deep trench having a tapered profile in silicon
US6846746B2 (en) * 2002-05-01 2005-01-25 Applied Materials, Inc. Method of smoothing a trench sidewall after a deep trench silicon etch process
US6759340B2 (en) 2002-05-09 2004-07-06 Padmapani C. Nallan Method of etching a trench in a silicon-on-insulator (SOI) structure
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7074723B2 (en) 2002-08-02 2006-07-11 Applied Materials, Inc. Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system
US6924235B2 (en) * 2002-08-16 2005-08-02 Unaxis Usa Inc. Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US6946362B2 (en) * 2002-09-06 2005-09-20 Hewlett-Packard Development Company, L.P. Method and apparatus for forming high surface area material films and membranes
US6921490B1 (en) 2002-09-06 2005-07-26 Kotura, Inc. Optical component having waveguides extending from a common region
AU2003275018B2 (en) 2002-09-20 2009-10-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6902867B2 (en) * 2002-10-02 2005-06-07 Lexmark International, Inc. Ink jet printheads and methods therefor
SG152920A1 (en) * 2002-10-11 2009-06-29 Lam Res Corp A method for plasma etching performance enhancement
US7169695B2 (en) * 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
US6833325B2 (en) * 2002-10-11 2004-12-21 Lam Research Corporation Method for plasma etching performance enhancement
US7977390B2 (en) 2002-10-11 2011-07-12 Lam Research Corporation Method for plasma etching performance enhancement
DE10247913A1 (de) * 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US7115520B2 (en) * 2003-04-07 2006-10-03 Unaxis Usa, Inc. Method and apparatus for process control in time division multiplexed (TDM) etch process
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7294580B2 (en) 2003-04-09 2007-11-13 Lam Research Corporation Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
DE10318568A1 (de) * 2003-04-15 2004-11-25 Technische Universität Dresden Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
US6980347B2 (en) 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
JP4161857B2 (ja) * 2003-09-10 2008-10-08 株式会社デンソー 半導体装置の製造方法
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
US7135410B2 (en) * 2003-09-26 2006-11-14 Lam Research Corporation Etch with ramping
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
USRE42955E1 (en) * 2003-12-04 2011-11-22 Bae Systems Information And Electronic Systems Integration Inc. GaN-based permeable base transistor and method of fabrication
JP3816484B2 (ja) 2003-12-15 2006-08-30 日本航空電子工業株式会社 ドライエッチング方法
US20050211668A1 (en) * 2004-03-26 2005-09-29 Lam Research Corporation Methods of processing a substrate with minimal scalloping
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
US7053003B2 (en) * 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006173293A (ja) * 2004-12-15 2006-06-29 Toshiba Corp 半導体装置の製造方法
US7459100B2 (en) * 2004-12-22 2008-12-02 Lam Research Corporation Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
US20060168794A1 (en) * 2005-01-28 2006-08-03 Hitachi Global Storage Technologies Method to control mask profile for read sensor definition
US20070026682A1 (en) * 2005-02-10 2007-02-01 Hochberg Michael J Method for advanced time-multiplexed etching
US7241683B2 (en) 2005-03-08 2007-07-10 Lam Research Corporation Stabilized photoresist structure for etching process
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
GB0508706D0 (en) 2005-04-28 2005-06-08 Oxford Instr Plasma Technology Method of generating and using a plasma processing control program
FR2887073B1 (fr) * 2005-06-14 2007-08-10 Alcatel Sa Procede de pilotage de la pression dans une chambre de procede
US7425507B2 (en) * 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4707178B2 (ja) * 2005-06-29 2011-06-22 キヤノンマーケティングジャパン株式会社 エッチング方法およびエッチング装置
EP1804281B1 (de) 2005-12-28 2011-12-14 STMicroelectronics Srl Verfahren zum Ätzen eines tiefen Grabens in einem halbleitenden Gegenstand, und halbleitender Gegenstand so hergestellt.
US7910489B2 (en) 2006-02-17 2011-03-22 Lam Research Corporation Infinitely selective photoresist mask etch
US7341953B2 (en) * 2006-04-17 2008-03-11 Lam Research Corporation Mask profile control for controlling feature profile
US7829465B2 (en) * 2006-08-09 2010-11-09 Shouliang Lai Method for plasma etching of positively sloped structures
DE102006043389A1 (de) * 2006-09-06 2008-03-27 Technische Universität Dresden Verfahren zum Plasmaätzen zur Erzeugung positiver Ätzprofile in Siliziumsubstraten
US7309646B1 (en) * 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
JP2008205436A (ja) * 2007-01-26 2008-09-04 Toshiba Corp 微細構造体の製造方法
US20080239428A1 (en) * 2007-04-02 2008-10-02 Inphase Technologies, Inc. Non-ft plane angular filters
US20080284835A1 (en) * 2007-05-15 2008-11-20 Panchawagh Hrishikesh V Integral, micromachined gutter for inkjet printhead
US7758155B2 (en) * 2007-05-15 2010-07-20 Eastman Kodak Company Monolithic printhead with multiple rows of inkjet orifices
US9123509B2 (en) * 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090033727A1 (en) * 2007-07-31 2009-02-05 Anagnostopoulos Constantine N Lateral flow device printhead with internal gutter
KR101555725B1 (ko) 2007-11-29 2015-09-25 램 리써치 코포레이션 마이크로로딩을 제어하기 위한 펄스화된 바이어스 플라즈마 프로세스
US9059116B2 (en) 2007-11-29 2015-06-16 Lam Research Corporation Etch with pulsed bias
JP5172417B2 (ja) * 2008-03-27 2013-03-27 Sppテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
US8585179B2 (en) * 2008-03-28 2013-11-19 Eastman Kodak Company Fluid flow in microfluidic devices
JP5308080B2 (ja) * 2008-06-18 2013-10-09 Sppテクノロジーズ株式会社 シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
US8343878B2 (en) * 2008-12-19 2013-01-01 The Board Of Trustees Of The University Of Illinois Method of plasma etching GA-based compound semiconductors
CN102768933B (zh) * 2009-01-31 2017-06-30 应用材料公司 用于蚀刻的方法
JP5532394B2 (ja) * 2009-10-15 2014-06-25 セイコーエプソン株式会社 半導体装置及び回路基板並びに電子機器
CN102135733B (zh) * 2010-01-27 2012-12-05 中芯国际集成电路制造(上海)有限公司 光阻去除方法
US8384183B2 (en) * 2010-02-19 2013-02-26 Allegro Microsystems, Inc. Integrated hall effect element having a germanium hall plate
JP5223878B2 (ja) 2010-03-30 2013-06-26 株式会社デンソー 半導体装置の製造方法
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
KR20120000612A (ko) * 2010-06-28 2012-01-04 삼성전자주식회사 반도체 장치의 제조 방법
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9070760B2 (en) 2011-03-14 2015-06-30 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8440473B2 (en) 2011-06-06 2013-05-14 Lam Research Corporation Use of spectrum to synchronize RF switching with gas switching during etch
US8609548B2 (en) * 2011-06-06 2013-12-17 Lam Research Corporation Method for providing high etch rate
US8912077B2 (en) 2011-06-15 2014-12-16 Applied Materials, Inc. Hybrid laser and plasma etch wafer dicing using substrate carrier
US8557683B2 (en) 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8598016B2 (en) * 2011-06-15 2013-12-03 Applied Materials, Inc. In-situ deposited mask layer for device singulation by laser scribing and plasma etch
US9129904B2 (en) 2011-06-15 2015-09-08 Applied Materials, Inc. Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch
US9029242B2 (en) 2011-06-15 2015-05-12 Applied Materials, Inc. Damage isolation by shaped beam delivery in laser scribing process
US8759197B2 (en) 2011-06-15 2014-06-24 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US8507363B2 (en) 2011-06-15 2013-08-13 Applied Materials, Inc. Laser and plasma etch wafer dicing using water-soluble die attach film
US8703581B2 (en) 2011-06-15 2014-04-22 Applied Materials, Inc. Water soluble mask for substrate dicing by laser and plasma etch
JP5981106B2 (ja) * 2011-07-12 2016-08-31 東京エレクトロン株式会社 プラズマエッチング方法
EP2769257B1 (de) 2011-10-20 2018-12-12 SI-Ware Systems Integrierte monolithische optische bank mit doppelt gekrümmtem optischen element und verfahren zu ihrer herstellung
CN102431960A (zh) * 2011-12-07 2012-05-02 华中科技大学 一种硅通孔刻蚀方法
CN103159163B (zh) * 2011-12-19 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法及基片处理设备
GB2499816A (en) * 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
US8946057B2 (en) 2012-04-24 2015-02-03 Applied Materials, Inc. Laser and plasma etch wafer dicing using UV-curable adhesive film
JP5713043B2 (ja) 2012-05-07 2015-05-07 株式会社デンソー 半導体基板の製造方法
US9048309B2 (en) 2012-07-10 2015-06-02 Applied Materials, Inc. Uniform masking for wafer dicing using laser and plasma etch
US8859397B2 (en) 2012-07-13 2014-10-14 Applied Materials, Inc. Method of coating water soluble mask for laser scribing and plasma etch
US8940619B2 (en) 2012-07-13 2015-01-27 Applied Materials, Inc. Method of diced wafer transportation
CN102832096B (zh) * 2012-09-20 2015-11-25 中微半导体设备(上海)有限公司 一种用于真空处理装置的气体供应装置及其气体供应及切换方法
US9252057B2 (en) 2012-10-17 2016-02-02 Applied Materials, Inc. Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
US8975162B2 (en) 2012-12-20 2015-03-10 Applied Materials, Inc. Wafer dicing from wafer backside
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9236305B2 (en) 2013-01-25 2016-01-12 Applied Materials, Inc. Wafer dicing with etch chamber shield ring for film frame wafer applications
US9620379B2 (en) 2013-03-14 2017-04-11 Applied Materials, Inc. Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
JP6180824B2 (ja) * 2013-07-02 2017-08-16 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
CN103400800B (zh) * 2013-08-14 2015-09-30 中微半导体设备(上海)有限公司 Bosch刻蚀方法
US9105710B2 (en) 2013-08-30 2015-08-11 Applied Materials, Inc. Wafer dicing method for improving die packaging quality
US9224650B2 (en) 2013-09-19 2015-12-29 Applied Materials, Inc. Wafer dicing from wafer backside and front side
US9460966B2 (en) 2013-10-10 2016-10-04 Applied Materials, Inc. Method and apparatus for dicing wafers having thick passivation polymer layer
US9041198B2 (en) 2013-10-22 2015-05-26 Applied Materials, Inc. Maskless hybrid laser scribing and plasma etching wafer dicing process
US9054050B2 (en) * 2013-11-06 2015-06-09 Tokyo Electron Limited Method for deep silicon etching using gas pulsing
US9312177B2 (en) 2013-12-06 2016-04-12 Applied Materials, Inc. Screen print mask for laser scribe and plasma etch wafer dicing process
US9299614B2 (en) 2013-12-10 2016-03-29 Applied Materials, Inc. Method and carrier for dicing a wafer
US9293304B2 (en) 2013-12-17 2016-03-22 Applied Materials, Inc. Plasma thermal shield for heat dissipation in plasma chamber
US9299611B2 (en) 2014-01-29 2016-03-29 Applied Materials, Inc. Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
US9018079B1 (en) 2014-01-29 2015-04-28 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean
US9236284B2 (en) 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
US8991329B1 (en) 2014-01-31 2015-03-31 Applied Materials, Inc. Wafer coating
JP6158111B2 (ja) * 2014-02-12 2017-07-05 東京エレクトロン株式会社 ガス供給方法及び半導体製造装置
US9275902B2 (en) 2014-03-26 2016-03-01 Applied Materials, Inc. Dicing processes for thin wafers with bumps on wafer backside
US9076860B1 (en) 2014-04-04 2015-07-07 Applied Materials, Inc. Residue removal from singulated die sidewall
CN103950887B (zh) * 2014-04-09 2016-01-20 华中科技大学 一种深硅刻蚀方法
US8975163B1 (en) 2014-04-10 2015-03-10 Applied Materials, Inc. Laser-dominated laser scribing and plasma etch hybrid wafer dicing
US8932939B1 (en) 2014-04-14 2015-01-13 Applied Materials, Inc. Water soluble mask formation by dry film lamination
US8912078B1 (en) 2014-04-16 2014-12-16 Applied Materials, Inc. Dicing wafers having solder bumps on wafer backside
US8999816B1 (en) 2014-04-18 2015-04-07 Applied Materials, Inc. Pre-patterned dry laminate mask for wafer dicing processes
US9159621B1 (en) 2014-04-29 2015-10-13 Applied Materials, Inc. Dicing tape protection for wafer dicing using laser scribe process
US8912075B1 (en) 2014-04-29 2014-12-16 Applied Materials, Inc. Wafer edge warp supression for thin wafer supported by tape frame
US9711365B2 (en) 2014-05-02 2017-07-18 International Business Machines Corporation Etch rate enhancement for a silicon etch process through etch chamber pretreatment
US8980727B1 (en) 2014-05-07 2015-03-17 Applied Materials, Inc. Substrate patterning using hybrid laser scribing and plasma etching processing schemes
US9112050B1 (en) 2014-05-13 2015-08-18 Applied Materials, Inc. Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
US9034771B1 (en) 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US9093518B1 (en) 2014-06-30 2015-07-28 Applied Materials, Inc. Singulation of wafers having wafer-level underfill
US9165832B1 (en) 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
US9130057B1 (en) 2014-06-30 2015-09-08 Applied Materials, Inc. Hybrid dicing process using a blade and laser
US9142459B1 (en) 2014-06-30 2015-09-22 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
US9349648B2 (en) 2014-07-22 2016-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process
US9196498B1 (en) 2014-08-12 2015-11-24 Applied Materials, Inc. Stationary actively-cooled shadow ring for heat dissipation in plasma chamber
US9117868B1 (en) 2014-08-12 2015-08-25 Applied Materials, Inc. Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
US9281244B1 (en) 2014-09-18 2016-03-08 Applied Materials, Inc. Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process
US11195756B2 (en) 2014-09-19 2021-12-07 Applied Materials, Inc. Proximity contact cover ring for plasma dicing
US9177861B1 (en) 2014-09-19 2015-11-03 Applied Materials, Inc. Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile
US9196536B1 (en) 2014-09-25 2015-11-24 Applied Materials, Inc. Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process
US9130056B1 (en) 2014-10-03 2015-09-08 Applied Materials, Inc. Bi-layer wafer-level underfill mask for wafer dicing and approaches for performing wafer dicing
DE102014114613B4 (de) * 2014-10-08 2023-10-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an strahlungsemittierenden Halbleiterchips und optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip
US9245803B1 (en) 2014-10-17 2016-01-26 Applied Materials, Inc. Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process
US10692765B2 (en) 2014-11-07 2020-06-23 Applied Materials, Inc. Transfer arm for film frame substrate handling during plasma singulation of wafers
GB201420935D0 (en) 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
CN104465336B (zh) * 2014-12-02 2017-05-17 国家纳米科学中心 一种低频bosch深硅刻蚀方法
US9355907B1 (en) 2015-01-05 2016-05-31 Applied Materials, Inc. Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process
US9330977B1 (en) 2015-01-05 2016-05-03 Applied Materials, Inc. Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process
US9159624B1 (en) 2015-01-05 2015-10-13 Applied Materials, Inc. Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach
US9601375B2 (en) 2015-04-27 2017-03-21 Applied Materials, Inc. UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach
US9721839B2 (en) 2015-06-12 2017-08-01 Applied Materials, Inc. Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch
US9478455B1 (en) 2015-06-12 2016-10-25 Applied Materials, Inc. Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber
US9691625B2 (en) * 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
US9972575B2 (en) 2016-03-03 2018-05-15 Applied Materials, Inc. Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
US9852997B2 (en) 2016-03-25 2017-12-26 Applied Materials, Inc. Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
US9793132B1 (en) 2016-05-13 2017-10-17 Applied Materials, Inc. Etch mask for hybrid laser scribing and plasma etch wafer singulation process
GB201608926D0 (en) 2016-05-20 2016-07-06 Spts Technologies Ltd Method for plasma etching a workpiece
JP7008474B2 (ja) * 2016-11-30 2022-01-25 東京エレクトロン株式会社 プラズマエッチング方法
JP2018110156A (ja) 2016-12-28 2018-07-12 キヤノン株式会社 半導体装置、その製造方法およびカメラ
US11158540B2 (en) 2017-05-26 2021-10-26 Applied Materials, Inc. Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process
US10363629B2 (en) 2017-06-01 2019-07-30 Applied Materials, Inc. Mitigation of particle contamination for wafer dicing processes
US10535561B2 (en) 2018-03-12 2020-01-14 Applied Materials, Inc. Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process
GB201810387D0 (en) 2018-06-25 2018-08-08 Spts Technologies Ltd Method of plasma etching
JP2020009840A (ja) * 2018-07-04 2020-01-16 東京エレクトロン株式会社 エッチング方法及び基板処理装置
JP2020021765A (ja) * 2018-07-30 2020-02-06 株式会社アルバック 半導体素子の製造方法
US11355394B2 (en) 2018-09-13 2022-06-07 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment
DE102019116019A1 (de) * 2019-06-12 2020-12-17 X-Fab Semiconductor Foundries Gmbh Herstellung von Bauelementen in Substraten über einen mehrstufigen Ätzprozess
US11011424B2 (en) 2019-08-06 2021-05-18 Applied Materials, Inc. Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
US11342226B2 (en) 2019-08-13 2022-05-24 Applied Materials, Inc. Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
US10903121B1 (en) 2019-08-14 2021-01-26 Applied Materials, Inc. Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process
US20210118734A1 (en) * 2019-10-22 2021-04-22 Semiconductor Components Industries, Llc Plasma-singulated, contaminant-reduced semiconductor die
US11600492B2 (en) 2019-12-10 2023-03-07 Applied Materials, Inc. Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
US11177137B2 (en) * 2020-01-17 2021-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer etching process and methods thereof
CN111257596B (zh) * 2020-02-25 2021-09-14 西南交通大学 一种扫描探针显微镜狭小实验腔环境气氛精确控制装置
US11373877B2 (en) 2020-04-13 2022-06-28 Applied Materials, Inc. Methods and apparatus for in-situ protection liners for high aspect ratio reactive ion etching
US11262506B1 (en) * 2020-08-07 2022-03-01 Advanced Semiconductor Engineering, Inc. Recessed portion in a substrate and method of forming the same
CN113140455A (zh) * 2021-04-14 2021-07-20 北京北方华创微电子装备有限公司 倾斜通孔的刻蚀方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0048175B1 (de) * 1980-09-17 1986-04-23 Hitachi, Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4599135A (en) * 1983-09-30 1986-07-08 Hitachi, Ltd. Thin film deposition
US4533430A (en) * 1984-01-04 1985-08-06 Advanced Micro Devices, Inc. Process for forming slots having near vertical sidewalls at their upper extremities
US4512841A (en) * 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
US4784720A (en) * 1985-05-03 1988-11-15 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
US4855017A (en) * 1985-05-03 1989-08-08 Texas Instruments Incorporated Trench etch process for a single-wafer RIE dry etch reactor
WO1987002179A1 (en) * 1985-09-27 1987-04-09 Burroughs Corporation Method of fabricating a tapered via hole in polyimide
JPS62136066A (ja) * 1985-12-09 1987-06-19 Mitsubishi Electric Corp 半導体装置の製造方法
EP0246514A3 (de) * 1986-05-16 1989-09-20 Air Products And Chemicals, Inc. Ätzung tiefer Nuten in monokristallinen Silizium
JP2502536B2 (ja) * 1986-08-08 1996-05-29 松下電器産業株式会社 パタ―ン形成方法
KR900007687B1 (ko) * 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
US4707218A (en) * 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
NL8701867A (nl) * 1987-08-07 1989-03-01 Cobrain Nv Werkwijze voor het behandelen, in het bijzonder droog etsen van een substraat en etsinrichting.
US5007982A (en) * 1988-07-11 1991-04-16 North American Philips Corporation Reactive ion etching of silicon with hydrogen bromide
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
IT1225636B (it) * 1988-12-15 1990-11-22 Sgs Thomson Microelectronics Metodo di scavo con profilo di fondo arrotondato per strutture di isolamento incassate nel silicio
KR900013595A (ko) * 1989-02-15 1990-09-06 미다 가쓰시게 플라즈마 에칭방법 및 장치
JPH03126222A (ja) * 1989-10-12 1991-05-29 Canon Inc 堆積膜形成方法
JPH03129820A (ja) * 1989-10-16 1991-06-03 Seiko Epson Corp 半導体製造装置及び半導体装置の製造方法
KR910010516A (ko) * 1989-11-15 1991-06-29 아오이 죠이치 반도체 메모리장치
US5474650A (en) * 1991-04-04 1995-12-12 Hitachi, Ltd. Method and apparatus for dry etching
JP2913936B2 (ja) * 1991-10-08 1999-06-28 日本電気株式会社 半導体装置の製造方法
US5368685A (en) * 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
JP2661455B2 (ja) * 1992-03-27 1997-10-08 株式会社日立製作所 真空処理装置
JPH0612767A (ja) * 1992-06-25 1994-01-21 Victor Co Of Japan Ltd 自動再生装置
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07226397A (ja) * 1994-02-10 1995-08-22 Tokyo Electron Ltd エッチング処理方法
US5605600A (en) * 1995-03-13 1997-02-25 International Business Machines Corporation Etch profile shaping through wafer temperature control

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US6051503A (en) 2000-04-18
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EP0822582A3 (de) 1998-05-13
DE69725245D1 (de) 2003-11-06
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JP2004119994A (ja) 2004-04-15
EP1357584A3 (de) 2005-01-12

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