US6969635B2
(en)
|
2000-12-07 |
2005-11-29 |
Reflectivity, Inc. |
Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
|
US6849471B2
(en)
|
2003-03-28 |
2005-02-01 |
Reflectivity, Inc. |
Barrier layers for microelectromechanical systems
|
GB9616225D0
(en)
*
|
1996-08-01 |
1996-09-11 |
Surface Tech Sys Ltd |
Method of surface treatment of semiconductor substrates
|
US6749717B1
(en)
*
|
1997-02-04 |
2004-06-15 |
Micron Technology, Inc. |
Device for in-situ cleaning of an inductively-coupled plasma chambers
|
DE19736370C2
(de)
*
|
1997-08-21 |
2001-12-06 |
Bosch Gmbh Robert |
Verfahren zum anisotropen Ätzen von Silizium
|
WO1999046810A1
(fr)
*
|
1998-03-12 |
1999-09-16 |
Hitachi, Ltd. |
Procede permettant de traiter la surface d'un echantillon
|
US6194038B1
(en)
|
1998-03-20 |
2001-02-27 |
Applied Materials, Inc. |
Method for deposition of a conformal layer on a substrate
|
US6642149B2
(en)
*
|
1998-09-16 |
2003-11-04 |
Tokyo Electron Limited |
Plasma processing method
|
JP4153606B2
(ja)
*
|
1998-10-22 |
2008-09-24 |
東京エレクトロン株式会社 |
プラズマエッチング方法およびプラズマエッチング装置
|
EP1131847B1
(de)
*
|
1998-11-04 |
2010-02-17 |
Surface Technology Systems Plc |
Verfahren zur ätzung eines substrats
|
KR100829288B1
(ko)
*
|
1998-12-11 |
2008-05-13 |
서페이스 테크놀로지 시스템스 피엘씨 |
플라즈마 처리장치
|
US6417013B1
(en)
|
1999-01-29 |
2002-07-09 |
Plasma-Therm, Inc. |
Morphed processing of semiconductor devices
|
GB2348399A
(en)
*
|
1999-03-31 |
2000-10-04 |
Univ Glasgow |
Reactive ion etching with control of etch gas flow rate, pressure and rf power
|
US6383938B2
(en)
*
|
1999-04-21 |
2002-05-07 |
Alcatel |
Method of anisotropic etching of substrates
|
DE19919832A1
(de)
*
|
1999-04-30 |
2000-11-09 |
Bosch Gmbh Robert |
Verfahren zum anisotropen Plasmaätzen von Halbleitern
|
DE19927806A1
(de)
|
1999-06-18 |
2001-01-04 |
Bosch Gmbh Robert |
Vorrichtung und Verfahren zum Hochratenätzen eines Substrates mit einer Plasmaätzanlage und Vorrichtung und Verfahren zum Zünden eines Plasmas und Hochregeln oder Pulsen der Plasmaleistung
|
DE19930188A1
(de)
*
|
1999-06-30 |
2001-01-04 |
Infineon Technologies Ag |
Verfahren zur Herstellung von Gräben für Speicherkondensatoren von DRAM-Halbleiterspeichern
|
US20030015496A1
(en)
*
|
1999-07-22 |
2003-01-23 |
Sujit Sharan |
Plasma etching process
|
GB9917305D0
(en)
*
|
1999-07-23 |
1999-09-22 |
Surface Tech Sys Ltd |
Method and apparatus for anisotropic etching
|
EP1077475A3
(de)
*
|
1999-08-11 |
2003-04-02 |
Applied Materials, Inc. |
Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil
|
US6291357B1
(en)
|
1999-10-06 |
2001-09-18 |
Applied Materials, Inc. |
Method and apparatus for etching a substrate with reduced microloading
|
JP2001110784A
(ja)
*
|
1999-10-12 |
2001-04-20 |
Hitachi Ltd |
プラズマ処理装置および処理方法
|
US6290864B1
(en)
|
1999-10-26 |
2001-09-18 |
Reflectivity, Inc. |
Fluoride gas etching of silicon with improved selectivity
|
US6960305B2
(en)
|
1999-10-26 |
2005-11-01 |
Reflectivity, Inc |
Methods for forming and releasing microelectromechanical structures
|
US6949202B1
(en)
|
1999-10-26 |
2005-09-27 |
Reflectivity, Inc |
Apparatus and method for flow of process gas in an ultra-clean environment
|
US6942811B2
(en)
|
1999-10-26 |
2005-09-13 |
Reflectivity, Inc |
Method for achieving improved selectivity in an etching process
|
US7041224B2
(en)
|
1999-10-26 |
2006-05-09 |
Reflectivity, Inc. |
Method for vapor phase etching of silicon
|
US6890863B1
(en)
*
|
2000-04-27 |
2005-05-10 |
Micron Technology, Inc. |
Etchant and method of use
|
JP3525862B2
(ja)
*
|
2000-05-22 |
2004-05-10 |
トヨタ自動車株式会社 |
センサ素子及びセンサ装置
|
US7019376B2
(en)
|
2000-08-11 |
2006-03-28 |
Reflectivity, Inc |
Micromirror array device with a small pitch size
|
WO2002015960A2
(en)
*
|
2000-08-21 |
2002-02-28 |
The Cleveland Clinic Foundation |
Microneedle array module and method of fabricating the same
|
US6784108B1
(en)
*
|
2000-08-31 |
2004-08-31 |
Micron Technology, Inc. |
Gas pulsing for etch profile control
|
US6402301B1
(en)
|
2000-10-27 |
2002-06-11 |
Lexmark International, Inc |
Ink jet printheads and methods therefor
|
WO2002075801A2
(en)
*
|
2000-11-07 |
2002-09-26 |
Tokyo Electron Limited |
Method of fabricating oxides with low defect densities
|
US6743732B1
(en)
*
|
2001-01-26 |
2004-06-01 |
Taiwan Semiconductor Manufacturing Company |
Organic low K dielectric etch with NH3 chemistry
|
US6451673B1
(en)
*
|
2001-02-15 |
2002-09-17 |
Advanced Micro Devices, Inc. |
Carrier gas modification for preservation of mask layer during plasma etching
|
US20020139771A1
(en)
*
|
2001-02-22 |
2002-10-03 |
Ping Jiang |
Gas switching during an etch process to modulate the characteristics of the etch
|
US20020139477A1
(en)
|
2001-03-30 |
2002-10-03 |
Lam Research Corporation |
Plasma processing method and apparatus with control of plasma excitation power
|
US20020158047A1
(en)
*
|
2001-04-27 |
2002-10-31 |
Yiqiong Wang |
Formation of an optical component having smooth sidewalls
|
US20020158046A1
(en)
*
|
2001-04-27 |
2002-10-31 |
Chi Wu |
Formation of an optical component
|
US6635556B1
(en)
*
|
2001-05-17 |
2003-10-21 |
Matrix Semiconductor, Inc. |
Method of preventing autodoping
|
WO2002095800A2
(en)
*
|
2001-05-22 |
2002-11-28 |
Reflectivity, Inc. |
A method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
|
US6555166B2
(en)
*
|
2001-06-29 |
2003-04-29 |
International Business Machines |
Method for reducing the microloading effect in a chemical vapor deposition reactor
|
US7067849B2
(en)
|
2001-07-17 |
2006-06-27 |
Lg Electronics Inc. |
Diode having high brightness and method thereof
|
US6555480B2
(en)
|
2001-07-31 |
2003-04-29 |
Hewlett-Packard Development Company, L.P. |
Substrate with fluidic channel and method of manufacturing
|
US6890859B1
(en)
*
|
2001-08-10 |
2005-05-10 |
Cypress Semiconductor Corporation |
Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby
|
US7189332B2
(en)
|
2001-09-17 |
2007-03-13 |
Texas Instruments Incorporated |
Apparatus and method for detecting an endpoint in a vapor phase etch
|
JP4209774B2
(ja)
*
|
2001-09-28 |
2009-01-14 |
住友精密工業株式会社 |
シリコン基板のエッチング方法およびエッチング装置
|
US7115516B2
(en)
*
|
2001-10-09 |
2006-10-03 |
Applied Materials, Inc. |
Method of depositing a material layer
|
US6949395B2
(en)
*
|
2001-10-22 |
2005-09-27 |
Oriol, Inc. |
Method of making diode having reflective layer
|
US7148520B2
(en)
|
2001-10-26 |
2006-12-12 |
Lg Electronics Inc. |
Diode having vertical structure and method of manufacturing the same
|
US6906845B2
(en)
*
|
2001-11-26 |
2005-06-14 |
Samsung Electronics Co., Ltd. |
Micro-mechanical device having anti-stiction layer and method of manufacturing the device
|
FR2834382B1
(fr)
*
|
2002-01-03 |
2005-03-18 |
Cit Alcatel |
Procede et dispositif de gravure anisotrope du silicium a haut facteur d'aspect
|
US6965468B2
(en)
|
2003-07-03 |
2005-11-15 |
Reflectivity, Inc |
Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
|
US7027200B2
(en)
|
2002-03-22 |
2006-04-11 |
Reflectivity, Inc |
Etching method used in fabrications of microstructures
|
US6979652B2
(en)
*
|
2002-04-08 |
2005-12-27 |
Applied Materials, Inc. |
Etching multi-shaped openings in silicon
|
US6818562B2
(en)
|
2002-04-19 |
2004-11-16 |
Applied Materials Inc |
Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system
|
US6849554B2
(en)
|
2002-05-01 |
2005-02-01 |
Applied Materials, Inc. |
Method of etching a deep trench having a tapered profile in silicon
|
US6846746B2
(en)
*
|
2002-05-01 |
2005-01-25 |
Applied Materials, Inc. |
Method of smoothing a trench sidewall after a deep trench silicon etch process
|
US6759340B2
(en)
|
2002-05-09 |
2004-07-06 |
Padmapani C. Nallan |
Method of etching a trench in a silicon-on-insulator (SOI) structure
|
US6905626B2
(en)
*
|
2002-07-24 |
2005-06-14 |
Unaxis Usa Inc. |
Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
|
US7074723B2
(en)
|
2002-08-02 |
2006-07-11 |
Applied Materials, Inc. |
Method of plasma etching a deeply recessed feature in a substrate using a plasma source gas modulated etchant system
|
US6924235B2
(en)
*
|
2002-08-16 |
2005-08-02 |
Unaxis Usa Inc. |
Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
|
US6946362B2
(en)
*
|
2002-09-06 |
2005-09-20 |
Hewlett-Packard Development Company, L.P. |
Method and apparatus for forming high surface area material films and membranes
|
US6921490B1
(en)
|
2002-09-06 |
2005-07-26 |
Kotura, Inc. |
Optical component having waveguides extending from a common region
|
AU2003275018B2
(en)
|
2002-09-20 |
2009-10-01 |
Integrated Dna Technologies, Inc. |
Anthraquinone quencher dyes, their methods of preparation and use
|
US6902867B2
(en)
*
|
2002-10-02 |
2005-06-07 |
Lexmark International, Inc. |
Ink jet printheads and methods therefor
|
SG152920A1
(en)
*
|
2002-10-11 |
2009-06-29 |
Lam Res Corp |
A method for plasma etching performance enhancement
|
US7169695B2
(en)
*
|
2002-10-11 |
2007-01-30 |
Lam Research Corporation |
Method for forming a dual damascene structure
|
US6833325B2
(en)
*
|
2002-10-11 |
2004-12-21 |
Lam Research Corporation |
Method for plasma etching performance enhancement
|
US7977390B2
(en)
|
2002-10-11 |
2011-07-12 |
Lam Research Corporation |
Method for plasma etching performance enhancement
|
DE10247913A1
(de)
*
|
2002-10-14 |
2004-04-22 |
Robert Bosch Gmbh |
Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
|
US6913942B2
(en)
|
2003-03-28 |
2005-07-05 |
Reflectvity, Inc |
Sacrificial layers for use in fabrications of microelectromechanical devices
|
US7115520B2
(en)
*
|
2003-04-07 |
2006-10-03 |
Unaxis Usa, Inc. |
Method and apparatus for process control in time division multiplexed (TDM) etch process
|
US6916746B1
(en)
*
|
2003-04-09 |
2005-07-12 |
Lam Research Corporation |
Method for plasma etching using periodic modulation of gas chemistry
|
US7294580B2
(en)
|
2003-04-09 |
2007-11-13 |
Lam Research Corporation |
Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
|
DE10318568A1
(de)
*
|
2003-04-15 |
2004-11-25 |
Technische Universität Dresden |
Siliziumsubstrat mit positiven Ätzprofilen mit definiertem Böschungswinkel und Verfahren zur Herstellung
|
US20040224524A1
(en)
*
|
2003-05-09 |
2004-11-11 |
Applied Materials, Inc. |
Maintaining the dimensions of features being etched on a lithographic mask
|
US6980347B2
(en)
|
2003-07-03 |
2005-12-27 |
Reflectivity, Inc |
Micromirror having reduced space between hinge and mirror plate of the micromirror
|
JP4161857B2
(ja)
*
|
2003-09-10 |
2008-10-08 |
株式会社デンソー |
半導体装置の製造方法
|
US7645704B2
(en)
|
2003-09-17 |
2010-01-12 |
Texas Instruments Incorporated |
Methods and apparatus of etch process control in fabrications of microstructures
|
US7135410B2
(en)
*
|
2003-09-26 |
2006-11-14 |
Lam Research Corporation |
Etch with ramping
|
US20050112891A1
(en)
*
|
2003-10-21 |
2005-05-26 |
David Johnson |
Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
|
USRE42955E1
(en)
*
|
2003-12-04 |
2011-11-22 |
Bae Systems Information And Electronic Systems Integration Inc. |
GaN-based permeable base transistor and method of fabrication
|
JP3816484B2
(ja)
|
2003-12-15 |
2006-08-30 |
日本航空電子工業株式会社 |
ドライエッチング方法
|
US20050211668A1
(en)
*
|
2004-03-26 |
2005-09-29 |
Lam Research Corporation |
Methods of processing a substrate with minimal scalloping
|
JP4416569B2
(ja)
*
|
2004-05-24 |
2010-02-17 |
キヤノン株式会社 |
堆積膜形成方法および堆積膜形成装置
|
US7053003B2
(en)
*
|
2004-10-27 |
2006-05-30 |
Lam Research Corporation |
Photoresist conditioning with hydrogen ramping
|
JP2006173293A
(ja)
*
|
2004-12-15 |
2006-06-29 |
Toshiba Corp |
半導体装置の製造方法
|
US7459100B2
(en)
*
|
2004-12-22 |
2008-12-02 |
Lam Research Corporation |
Methods and apparatus for sequentially alternating among plasma processes in order to optimize a substrate
|
US20060168794A1
(en)
*
|
2005-01-28 |
2006-08-03 |
Hitachi Global Storage Technologies |
Method to control mask profile for read sensor definition
|
US20070026682A1
(en)
*
|
2005-02-10 |
2007-02-01 |
Hochberg Michael J |
Method for advanced time-multiplexed etching
|
US7241683B2
(en)
|
2005-03-08 |
2007-07-10 |
Lam Research Corporation |
Stabilized photoresist structure for etching process
|
US7491647B2
(en)
*
|
2005-03-08 |
2009-02-17 |
Lam Research Corporation |
Etch with striation control
|
GB0508706D0
(en)
|
2005-04-28 |
2005-06-08 |
Oxford Instr Plasma Technology |
Method of generating and using a plasma processing control program
|
FR2887073B1
(fr)
*
|
2005-06-14 |
2007-08-10 |
Alcatel Sa |
Procede de pilotage de la pression dans une chambre de procede
|
US7425507B2
(en)
*
|
2005-06-28 |
2008-09-16 |
Micron Technology, Inc. |
Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
|
JP4707178B2
(ja)
*
|
2005-06-29 |
2011-06-22 |
キヤノンマーケティングジャパン株式会社 |
エッチング方法およびエッチング装置
|
EP1804281B1
(de)
|
2005-12-28 |
2011-12-14 |
STMicroelectronics Srl |
Verfahren zum Ätzen eines tiefen Grabens in einem halbleitenden Gegenstand, und halbleitender Gegenstand so hergestellt.
|
US7910489B2
(en)
|
2006-02-17 |
2011-03-22 |
Lam Research Corporation |
Infinitely selective photoresist mask etch
|
US7341953B2
(en)
*
|
2006-04-17 |
2008-03-11 |
Lam Research Corporation |
Mask profile control for controlling feature profile
|
US7829465B2
(en)
*
|
2006-08-09 |
2010-11-09 |
Shouliang Lai |
Method for plasma etching of positively sloped structures
|
DE102006043389A1
(de)
*
|
2006-09-06 |
2008-03-27 |
Technische Universität Dresden |
Verfahren zum Plasmaätzen zur Erzeugung positiver Ätzprofile in Siliziumsubstraten
|
US7309646B1
(en)
*
|
2006-10-10 |
2007-12-18 |
Lam Research Corporation |
De-fluoridation process
|
JP2008205436A
(ja)
*
|
2007-01-26 |
2008-09-04 |
Toshiba Corp |
微細構造体の製造方法
|
US20080239428A1
(en)
*
|
2007-04-02 |
2008-10-02 |
Inphase Technologies, Inc. |
Non-ft plane angular filters
|
US20080284835A1
(en)
*
|
2007-05-15 |
2008-11-20 |
Panchawagh Hrishikesh V |
Integral, micromachined gutter for inkjet printhead
|
US7758155B2
(en)
*
|
2007-05-15 |
2010-07-20 |
Eastman Kodak Company |
Monolithic printhead with multiple rows of inkjet orifices
|
US9123509B2
(en)
*
|
2007-06-29 |
2015-09-01 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for plasma processing a substrate
|
US20090033727A1
(en)
*
|
2007-07-31 |
2009-02-05 |
Anagnostopoulos Constantine N |
Lateral flow device printhead with internal gutter
|
KR101555725B1
(ko)
|
2007-11-29 |
2015-09-25 |
램 리써치 코포레이션 |
마이크로로딩을 제어하기 위한 펄스화된 바이어스 플라즈마 프로세스
|
US9059116B2
(en)
|
2007-11-29 |
2015-06-16 |
Lam Research Corporation |
Etch with pulsed bias
|
JP5172417B2
(ja)
*
|
2008-03-27 |
2013-03-27 |
Sppテクノロジーズ株式会社 |
シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
|
US8585179B2
(en)
*
|
2008-03-28 |
2013-11-19 |
Eastman Kodak Company |
Fluid flow in microfluidic devices
|
JP5308080B2
(ja)
*
|
2008-06-18 |
2013-10-09 |
Sppテクノロジーズ株式会社 |
シリコン構造体の製造方法及びその製造装置並びにその製造プログラム
|
US8343878B2
(en)
*
|
2008-12-19 |
2013-01-01 |
The Board Of Trustees Of The University Of Illinois |
Method of plasma etching GA-based compound semiconductors
|
CN102768933B
(zh)
*
|
2009-01-31 |
2017-06-30 |
应用材料公司 |
用于蚀刻的方法
|
JP5532394B2
(ja)
*
|
2009-10-15 |
2014-06-25 |
セイコーエプソン株式会社 |
半導体装置及び回路基板並びに電子機器
|
CN102135733B
(zh)
*
|
2010-01-27 |
2012-12-05 |
中芯国际集成电路制造(上海)有限公司 |
光阻去除方法
|
US8384183B2
(en)
*
|
2010-02-19 |
2013-02-26 |
Allegro Microsystems, Inc. |
Integrated hall effect element having a germanium hall plate
|
JP5223878B2
(ja)
|
2010-03-30 |
2013-06-26 |
株式会社デンソー |
半導体装置の製造方法
|
US8642448B2
(en)
|
2010-06-22 |
2014-02-04 |
Applied Materials, Inc. |
Wafer dicing using femtosecond-based laser and plasma etch
|
KR20120000612A
(ko)
*
|
2010-06-28 |
2012-01-04 |
삼성전자주식회사 |
반도체 장치의 제조 방법
|
US8133349B1
(en)
|
2010-11-03 |
2012-03-13 |
Lam Research Corporation |
Rapid and uniform gas switching for a plasma etch process
|
US8802545B2
(en)
|
2011-03-14 |
2014-08-12 |
Plasma-Therm Llc |
Method and apparatus for plasma dicing a semi-conductor wafer
|
US9070760B2
(en)
|
2011-03-14 |
2015-06-30 |
Plasma-Therm Llc |
Method and apparatus for plasma dicing a semi-conductor wafer
|
US8440473B2
(en)
|
2011-06-06 |
2013-05-14 |
Lam Research Corporation |
Use of spectrum to synchronize RF switching with gas switching during etch
|
US8609548B2
(en)
*
|
2011-06-06 |
2013-12-17 |
Lam Research Corporation |
Method for providing high etch rate
|
US8912077B2
(en)
|
2011-06-15 |
2014-12-16 |
Applied Materials, Inc. |
Hybrid laser and plasma etch wafer dicing using substrate carrier
|
US8557683B2
(en)
|
2011-06-15 |
2013-10-15 |
Applied Materials, Inc. |
Multi-step and asymmetrically shaped laser beam scribing
|
US8598016B2
(en)
*
|
2011-06-15 |
2013-12-03 |
Applied Materials, Inc. |
In-situ deposited mask layer for device singulation by laser scribing and plasma etch
|
US9129904B2
(en)
|
2011-06-15 |
2015-09-08 |
Applied Materials, Inc. |
Wafer dicing using pulse train laser with multiple-pulse bursts and plasma etch
|
US9029242B2
(en)
|
2011-06-15 |
2015-05-12 |
Applied Materials, Inc. |
Damage isolation by shaped beam delivery in laser scribing process
|
US8759197B2
(en)
|
2011-06-15 |
2014-06-24 |
Applied Materials, Inc. |
Multi-step and asymmetrically shaped laser beam scribing
|
US8507363B2
(en)
|
2011-06-15 |
2013-08-13 |
Applied Materials, Inc. |
Laser and plasma etch wafer dicing using water-soluble die attach film
|
US8703581B2
(en)
|
2011-06-15 |
2014-04-22 |
Applied Materials, Inc. |
Water soluble mask for substrate dicing by laser and plasma etch
|
JP5981106B2
(ja)
*
|
2011-07-12 |
2016-08-31 |
東京エレクトロン株式会社 |
プラズマエッチング方法
|
EP2769257B1
(de)
|
2011-10-20 |
2018-12-12 |
SI-Ware Systems |
Integrierte monolithische optische bank mit doppelt gekrümmtem optischen element und verfahren zu ihrer herstellung
|
CN102431960A
(zh)
*
|
2011-12-07 |
2012-05-02 |
华中科技大学 |
一种硅通孔刻蚀方法
|
CN103159163B
(zh)
*
|
2011-12-19 |
2016-06-08 |
北京北方微电子基地设备工艺研究中心有限责任公司 |
基片刻蚀方法及基片处理设备
|
GB2499816A
(en)
*
|
2012-02-29 |
2013-09-04 |
Oxford Instr Nanotechnology Tools Ltd |
Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
|
US8946057B2
(en)
|
2012-04-24 |
2015-02-03 |
Applied Materials, Inc. |
Laser and plasma etch wafer dicing using UV-curable adhesive film
|
JP5713043B2
(ja)
|
2012-05-07 |
2015-05-07 |
株式会社デンソー |
半導体基板の製造方法
|
US9048309B2
(en)
|
2012-07-10 |
2015-06-02 |
Applied Materials, Inc. |
Uniform masking for wafer dicing using laser and plasma etch
|
US8859397B2
(en)
|
2012-07-13 |
2014-10-14 |
Applied Materials, Inc. |
Method of coating water soluble mask for laser scribing and plasma etch
|
US8940619B2
(en)
|
2012-07-13 |
2015-01-27 |
Applied Materials, Inc. |
Method of diced wafer transportation
|
CN102832096B
(zh)
*
|
2012-09-20 |
2015-11-25 |
中微半导体设备(上海)有限公司 |
一种用于真空处理装置的气体供应装置及其气体供应及切换方法
|
US9252057B2
(en)
|
2012-10-17 |
2016-02-02 |
Applied Materials, Inc. |
Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application
|
US8975162B2
(en)
|
2012-12-20 |
2015-03-10 |
Applied Materials, Inc. |
Wafer dicing from wafer backside
|
US9018108B2
(en)
|
2013-01-25 |
2015-04-28 |
Applied Materials, Inc. |
Low shrinkage dielectric films
|
US9236305B2
(en)
|
2013-01-25 |
2016-01-12 |
Applied Materials, Inc. |
Wafer dicing with etch chamber shield ring for film frame wafer applications
|
US9620379B2
(en)
|
2013-03-14 |
2017-04-11 |
Applied Materials, Inc. |
Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
|
JP6180824B2
(ja)
*
|
2013-07-02 |
2017-08-16 |
東京エレクトロン株式会社 |
プラズマエッチング方法及びプラズマエッチング装置
|
CN103400800B
(zh)
*
|
2013-08-14 |
2015-09-30 |
中微半导体设备(上海)有限公司 |
Bosch刻蚀方法
|
US9105710B2
(en)
|
2013-08-30 |
2015-08-11 |
Applied Materials, Inc. |
Wafer dicing method for improving die packaging quality
|
US9224650B2
(en)
|
2013-09-19 |
2015-12-29 |
Applied Materials, Inc. |
Wafer dicing from wafer backside and front side
|
US9460966B2
(en)
|
2013-10-10 |
2016-10-04 |
Applied Materials, Inc. |
Method and apparatus for dicing wafers having thick passivation polymer layer
|
US9041198B2
(en)
|
2013-10-22 |
2015-05-26 |
Applied Materials, Inc. |
Maskless hybrid laser scribing and plasma etching wafer dicing process
|
US9054050B2
(en)
*
|
2013-11-06 |
2015-06-09 |
Tokyo Electron Limited |
Method for deep silicon etching using gas pulsing
|
US9312177B2
(en)
|
2013-12-06 |
2016-04-12 |
Applied Materials, Inc. |
Screen print mask for laser scribe and plasma etch wafer dicing process
|
US9299614B2
(en)
|
2013-12-10 |
2016-03-29 |
Applied Materials, Inc. |
Method and carrier for dicing a wafer
|
US9293304B2
(en)
|
2013-12-17 |
2016-03-22 |
Applied Materials, Inc. |
Plasma thermal shield for heat dissipation in plasma chamber
|
US9299611B2
(en)
|
2014-01-29 |
2016-03-29 |
Applied Materials, Inc. |
Method of wafer dicing using hybrid laser scribing and plasma etch approach with mask plasma treatment for improved mask etch resistance
|
US9018079B1
(en)
|
2014-01-29 |
2015-04-28 |
Applied Materials, Inc. |
Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate reactive post mask-opening clean
|
US9236284B2
(en)
|
2014-01-31 |
2016-01-12 |
Applied Materials, Inc. |
Cooled tape frame lift and low contact shadow ring for plasma heat isolation
|
US8991329B1
(en)
|
2014-01-31 |
2015-03-31 |
Applied Materials, Inc. |
Wafer coating
|
JP6158111B2
(ja)
*
|
2014-02-12 |
2017-07-05 |
東京エレクトロン株式会社 |
ガス供給方法及び半導体製造装置
|
US9275902B2
(en)
|
2014-03-26 |
2016-03-01 |
Applied Materials, Inc. |
Dicing processes for thin wafers with bumps on wafer backside
|
US9076860B1
(en)
|
2014-04-04 |
2015-07-07 |
Applied Materials, Inc. |
Residue removal from singulated die sidewall
|
CN103950887B
(zh)
*
|
2014-04-09 |
2016-01-20 |
华中科技大学 |
一种深硅刻蚀方法
|
US8975163B1
(en)
|
2014-04-10 |
2015-03-10 |
Applied Materials, Inc. |
Laser-dominated laser scribing and plasma etch hybrid wafer dicing
|
US8932939B1
(en)
|
2014-04-14 |
2015-01-13 |
Applied Materials, Inc. |
Water soluble mask formation by dry film lamination
|
US8912078B1
(en)
|
2014-04-16 |
2014-12-16 |
Applied Materials, Inc. |
Dicing wafers having solder bumps on wafer backside
|
US8999816B1
(en)
|
2014-04-18 |
2015-04-07 |
Applied Materials, Inc. |
Pre-patterned dry laminate mask for wafer dicing processes
|
US9159621B1
(en)
|
2014-04-29 |
2015-10-13 |
Applied Materials, Inc. |
Dicing tape protection for wafer dicing using laser scribe process
|
US8912075B1
(en)
|
2014-04-29 |
2014-12-16 |
Applied Materials, Inc. |
Wafer edge warp supression for thin wafer supported by tape frame
|
US9711365B2
(en)
|
2014-05-02 |
2017-07-18 |
International Business Machines Corporation |
Etch rate enhancement for a silicon etch process through etch chamber pretreatment
|
US8980727B1
(en)
|
2014-05-07 |
2015-03-17 |
Applied Materials, Inc. |
Substrate patterning using hybrid laser scribing and plasma etching processing schemes
|
US9112050B1
(en)
|
2014-05-13 |
2015-08-18 |
Applied Materials, Inc. |
Dicing tape thermal management by wafer frame support ring cooling during plasma dicing
|
US9034771B1
(en)
|
2014-05-23 |
2015-05-19 |
Applied Materials, Inc. |
Cooling pedestal for dicing tape thermal management during plasma dicing
|
US9093518B1
(en)
|
2014-06-30 |
2015-07-28 |
Applied Materials, Inc. |
Singulation of wafers having wafer-level underfill
|
US9165832B1
(en)
|
2014-06-30 |
2015-10-20 |
Applied Materials, Inc. |
Method of die singulation using laser ablation and induction of internal defects with a laser
|
US9130057B1
(en)
|
2014-06-30 |
2015-09-08 |
Applied Materials, Inc. |
Hybrid dicing process using a blade and laser
|
US9142459B1
(en)
|
2014-06-30 |
2015-09-22 |
Applied Materials, Inc. |
Wafer dicing using hybrid laser scribing and plasma etch approach with mask application by vacuum lamination
|
US9349648B2
(en)
|
2014-07-22 |
2016-05-24 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a rectangular shaped two-dimensional top hat laser beam profile or a linear shaped one-dimensional top hat laser beam profile laser scribing process and plasma etch process
|
US9196498B1
(en)
|
2014-08-12 |
2015-11-24 |
Applied Materials, Inc. |
Stationary actively-cooled shadow ring for heat dissipation in plasma chamber
|
US9117868B1
(en)
|
2014-08-12 |
2015-08-25 |
Applied Materials, Inc. |
Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
|
US9281244B1
(en)
|
2014-09-18 |
2016-03-08 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using an adaptive optics-controlled laser scribing process and plasma etch process
|
US11195756B2
(en)
|
2014-09-19 |
2021-12-07 |
Applied Materials, Inc. |
Proximity contact cover ring for plasma dicing
|
US9177861B1
(en)
|
2014-09-19 |
2015-11-03 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using laser scribing process based on an elliptical laser beam profile or a spatio-temporal controlled laser beam profile
|
US9196536B1
(en)
|
2014-09-25 |
2015-11-24 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a phase modulated laser beam profile laser scribing process and plasma etch process
|
US9130056B1
(en)
|
2014-10-03 |
2015-09-08 |
Applied Materials, Inc. |
Bi-layer wafer-level underfill mask for wafer dicing and approaches for performing wafer dicing
|
DE102014114613B4
(de)
*
|
2014-10-08 |
2023-10-12 |
OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung |
Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung einer Vielzahl an strahlungsemittierenden Halbleiterchips und optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip
|
US9245803B1
(en)
|
2014-10-17 |
2016-01-26 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a bessel beam shaper laser scribing process and plasma etch process
|
US10692765B2
(en)
|
2014-11-07 |
2020-06-23 |
Applied Materials, Inc. |
Transfer arm for film frame substrate handling during plasma singulation of wafers
|
GB201420935D0
(en)
|
2014-11-25 |
2015-01-07 |
Spts Technologies Ltd |
Plasma etching apparatus
|
CN104465336B
(zh)
*
|
2014-12-02 |
2017-05-17 |
国家纳米科学中心 |
一种低频bosch深硅刻蚀方法
|
US9355907B1
(en)
|
2015-01-05 |
2016-05-31 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a line shaped laser beam profile laser scribing process and plasma etch process
|
US9330977B1
(en)
|
2015-01-05 |
2016-05-03 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process
|
US9159624B1
(en)
|
2015-01-05 |
2015-10-13 |
Applied Materials, Inc. |
Vacuum lamination of polymeric dry films for wafer dicing using hybrid laser scribing and plasma etch approach
|
US9601375B2
(en)
|
2015-04-27 |
2017-03-21 |
Applied Materials, Inc. |
UV-cure pre-treatment of carrier film for wafer dicing using hybrid laser scribing and plasma etch approach
|
US9721839B2
(en)
|
2015-06-12 |
2017-08-01 |
Applied Materials, Inc. |
Etch-resistant water soluble mask for hybrid wafer dicing using laser scribing and plasma etch
|
US9478455B1
(en)
|
2015-06-12 |
2016-10-25 |
Applied Materials, Inc. |
Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber
|
US9691625B2
(en)
*
|
2015-11-04 |
2017-06-27 |
Lam Research Corporation |
Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
|
US9972575B2
(en)
|
2016-03-03 |
2018-05-15 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
|
US9852997B2
(en)
|
2016-03-25 |
2017-12-26 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a rotating beam laser scribing process and plasma etch process
|
US9793132B1
(en)
|
2016-05-13 |
2017-10-17 |
Applied Materials, Inc. |
Etch mask for hybrid laser scribing and plasma etch wafer singulation process
|
GB201608926D0
(en)
|
2016-05-20 |
2016-07-06 |
Spts Technologies Ltd |
Method for plasma etching a workpiece
|
JP7008474B2
(ja)
*
|
2016-11-30 |
2022-01-25 |
東京エレクトロン株式会社 |
プラズマエッチング方法
|
JP2018110156A
(ja)
|
2016-12-28 |
2018-07-12 |
キヤノン株式会社 |
半導体装置、その製造方法およびカメラ
|
US11158540B2
(en)
|
2017-05-26 |
2021-10-26 |
Applied Materials, Inc. |
Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process
|
US10363629B2
(en)
|
2017-06-01 |
2019-07-30 |
Applied Materials, Inc. |
Mitigation of particle contamination for wafer dicing processes
|
US10535561B2
(en)
|
2018-03-12 |
2020-01-14 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a multiple pass laser scribing process and plasma etch process
|
GB201810387D0
(en)
|
2018-06-25 |
2018-08-08 |
Spts Technologies Ltd |
Method of plasma etching
|
JP2020009840A
(ja)
*
|
2018-07-04 |
2020-01-16 |
東京エレクトロン株式会社 |
エッチング方法及び基板処理装置
|
JP2020021765A
(ja)
*
|
2018-07-30 |
2020-02-06 |
株式会社アルバック |
半導体素子の製造方法
|
US11355394B2
(en)
|
2018-09-13 |
2022-06-07 |
Applied Materials, Inc. |
Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate breakthrough treatment
|
DE102019116019A1
(de)
*
|
2019-06-12 |
2020-12-17 |
X-Fab Semiconductor Foundries Gmbh |
Herstellung von Bauelementen in Substraten über einen mehrstufigen Ätzprozess
|
US11011424B2
(en)
|
2019-08-06 |
2021-05-18 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a spatially multi-focused laser beam laser scribing process and plasma etch process
|
US11342226B2
(en)
|
2019-08-13 |
2022-05-24 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process
|
US10903121B1
(en)
|
2019-08-14 |
2021-01-26 |
Applied Materials, Inc. |
Hybrid wafer dicing approach using a uniform rotating beam laser scribing process and plasma etch process
|
US20210118734A1
(en)
*
|
2019-10-22 |
2021-04-22 |
Semiconductor Components Industries, Llc |
Plasma-singulated, contaminant-reduced semiconductor die
|
US11600492B2
(en)
|
2019-12-10 |
2023-03-07 |
Applied Materials, Inc. |
Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
|
US11177137B2
(en)
*
|
2020-01-17 |
2021-11-16 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Wafer etching process and methods thereof
|
CN111257596B
(zh)
*
|
2020-02-25 |
2021-09-14 |
西南交通大学 |
一种扫描探针显微镜狭小实验腔环境气氛精确控制装置
|
US11373877B2
(en)
|
2020-04-13 |
2022-06-28 |
Applied Materials, Inc. |
Methods and apparatus for in-situ protection liners for high aspect ratio reactive ion etching
|
US11262506B1
(en)
*
|
2020-08-07 |
2022-03-01 |
Advanced Semiconductor Engineering, Inc. |
Recessed portion in a substrate and method of forming the same
|
CN113140455A
(zh)
*
|
2021-04-14 |
2021-07-20 |
北京北方华创微电子装备有限公司 |
倾斜通孔的刻蚀方法
|